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1. 发明申请

US20090189075A1 INSPECTION METHOD AND INSPECTION SYSTEM USING CHARGED PARTICLE BEAM 审中-公开
标题翻译：使用充电粒子束的检查方法和检查系统
公开(公告)号：US20090189075A1
公开(公告)日：2009-07-30
申请号：US12420273
申请日：2009-04-08
申请人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
发明人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
IPC分类号： G01N23/00
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
摘要翻译：通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和电容量被确定为与检查图像中的电容重合。通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。

2. 发明授权

US07526747B2 Inspection method and inspection system using charged particle beam 失效
标题翻译：使用带电粒子束的检查方法和检查系统
公开(公告)号：US07526747B2
公开(公告)日：2009-04-28
申请号：US11165250
申请日：2005-06-24
申请人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
发明人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
IPC分类号： G06F17/50
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
摘要翻译：通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和电容量被确定为与检查图像中的电容重合。通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。

3. 发明申请

US20050236648A1 Inspection method and inspection system using charged particle beam 失效
公开(公告)号：US20050236648A1
公开(公告)日：2005-10-27
申请号：US11165250
申请日：2005-06-24
申请人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
发明人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
IPC分类号： G01N23/20 , G01N21/95 , G01N21/956 , G01N23/203 , G01N23/225 , G01N27/04 , G01N27/22 , G01R1/06 , G01R31/302 , G01R31/307 , G01R31/311 , G06T7/00 , H01J37/22 , H01J37/26 , H01J37/28 , H01L21/66 , H01L31/0336
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.

4. 发明授权

US06931620B2 Inspection method and inspection system using charged particle beam 失效
标题翻译：使用带电粒子束的检查方法和检查系统
公开(公告)号：US06931620B2
公开(公告)日：2005-08-16
申请号：US10419141
申请日：2003-04-21
申请人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
发明人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
IPC分类号： G01N23/20 , G01N21/95 , G01N21/956 , G01N23/203 , G01N23/225 , G01N27/04 , G01N27/22 , G01R1/06 , G01R31/302 , G01R31/307 , G01R31/311 , G06T7/00 , H01J37/22 , H01J37/26 , H01J37/28 , H01L21/66 , H01L31/0336 , G06F17/50
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
摘要翻译：通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和确定电容量与检查图像中的电容量一致。通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。

5. 发明授权

US06618850B2 Inspection method and inspection system using charged particle beam 失效
标题翻译：使用带电粒子束的检查方法和检查系统
公开(公告)号：US06618850B2
公开(公告)日：2003-09-09
申请号：US09785275
申请日：2001-02-20
申请人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
发明人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
IPC分类号： G06F1750
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected, such as a semiconductor wafer, with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of this signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is thereby conducted to detect a defect.
摘要翻译：通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和电容量被确定为与检查图像中的电容重合。通过使用通过电子束的照射产生的电荷来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，从而进行检查以检测缺陷。

6. 发明授权

US07211797B2 Inspection method and inspection system using charged particle beam 失效
标题翻译：使用带电粒子束的检查方法和检查系统
公开(公告)号：US07211797B2
公开(公告)日：2007-05-01
申请号：US11098699
申请日：2005-04-05
申请人： Hidetoshi Nishiyama , Mari Nozoe
发明人： Hidetoshi Nishiyama , Mari Nozoe
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , H01J37/226 , H01J37/28 , H01J2237/047 , H01J2237/2594 , H01J2237/2817
摘要： The present invention provides an inspection technique using a charged particle beam by which a method of setting a condition for optimally charging an object to be inspected without relying on an operator's experience is established and a voltage contrast image with higher efficiency of defect detection than ever before can be obtained. The inspection method comprises the steps of scanning an area on a surface of a substrate having a specific pattern formed thereon with a primary charged particle beam, detecting signals of secondary electrons emitted from the area, forming an image of the area from detected signals, and generating a histogram from the image. All these steps are performed each time a condition of irradiation with the charged particle beam is changed. When two or more separate peaks appear in the histogram, the histogram is determined as an optimal condition for inspection, and inspection is performed based on the image obtained under that condition.
摘要翻译：本发明提供了使用带电粒子束的检查技术，通过该技术，建立了不依赖于操作者的经验来设定用于最佳地对被检查物体进行充电的条件的方法以及比以往更高的缺陷检测效率的电压对比图像可以获得。检查方法包括以下步骤：利用初级带电粒子束扫描其上形成有特定图案的基板的表面上的区域，检测从该区域发射的二次电子的信号，从检测到的信号形成该区域的图像，以及从图像生成直方图。每当改变带电粒子束照射的条件时，都执行所有这些步骤。当直方图中出现两个或多个单独的峰时，直方图被确定为检查的最佳条件，并且基于在该条件下获得的图像进行检查。

7. 发明授权

US06924482B2 Method of inspecting pattern and inspecting instrument 失效
标题翻译：检查模式和检验仪器的方法
公开(公告)号：US06924482B2
公开(公告)日：2005-08-02
申请号：US10395197
申请日：2003-03-25
申请人： Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
发明人： Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
IPC分类号： G01R31/28 , G01Q10/00 , G01Q30/04 , G01R31/307 , H01L21/00 , H01L21/66 , G21K7/00
CPC分类号： H01J37/222 , G01R31/307 , H01J37/256 , H01J37/263 , H01J37/265 , H01J37/266 , H01J2237/043 , H01J2237/24564 , H01J2237/2594 , H01J2237/2813 , H01J2237/2817 , H01J2237/304
摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
摘要翻译：电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷作为亮度的差异。通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。故障部分的图像，亮度和分布信息在检查后自动保存并输出。

8. 发明授权

US07521679B2 Inspection method and inspection system using charged particle beam 失效
标题翻译：使用带电粒子束的检查方法和检查系统
公开(公告)号：US07521679B2
公开(公告)日：2009-04-21
申请号：US11706330
申请日：2007-02-15
申请人： Hidetoshi Nishiyama , Mari Nozoe
发明人： Hidetoshi Nishiyama , Mari Nozoe
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： H01J37/026 , H01J37/226 , H01J37/28 , H01J2237/047 , H01J2237/2594 , H01J2237/2817
摘要： An electron beam system using a scanning electron microscope equipped with a function for controlling a charged state of a sample to be observed includes electron optics for obtaining image data of the scanning electron microscope, and a monitor that displays a relationship between an equation for determining a degree of separation of peaks which appear in a histogram obtained on a basis of the image data and at least one parameter among parameters for controlling the charged state of the sample. An optimized parameter for controlling the charged stage of the sample can be visually distinguished on the monitor.
摘要翻译：使用具有用于控制要观察的样品的带电状态的功能的扫描电子显微镜的电子束系统包括用于获得扫描电子显微镜的图像数据的电子光学器件和显示用于确定扫描电子显微镜的方程之间的关系的监视器基于图像数据获得的直方图中出现的峰的分离度和用于控制样品的充电状态的参数中的至少一个参数。用于控制样品充电阶段的优化参数可以在显示器上进行目视辨别。

9. 发明申请

US20070023658A1 Method of inspecting pattern and inspecting instrument 有权
标题翻译：检查模式和检验仪器的方法
公开(公告)号：US20070023658A1
公开(公告)日：2007-02-01
申请号：US11518893
申请日：2006-09-12
申请人： Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
发明人： Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
IPC分类号： G21K7/00
CPC分类号： G06T7/0004 , G01N23/20 , G06T2207/30148 , H01J2237/2487 , H01J2237/2817
摘要： An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.
摘要翻译：配备有半导体晶片的检查功能的电子束装置包括扫描电子显微镜以获得半导体晶片的图像信息，以及处理图像信息的信息处理装置。信息处理装置包括：数据输入单元，用于接收晶片上的缺陷的位置信息，存储用于存储与位置信息对应的晶片上的位置的多个图像信息;以及图像处理单元，多个图像信息，并且根据缺陷的类型对与位置信息相对应的检索到的图像信息进行分类。

10. 发明授权

US06777677B2 Method of inspecting pattern and inspecting instrument 有权
标题翻译：检查模式和检验仪器的方法
公开(公告)号：US06777677B2
公开(公告)日：2004-08-17
申请号：US10463576
申请日：2003-06-18
申请人： Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
发明人： Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
IPC分类号： H01J3728
CPC分类号： G06T7/0004 , G01N23/20 , G06T2207/30148 , H01J2237/2487 , H01J2237/2817
摘要： A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.
摘要翻译：一种图案检查系统，用于检查其上形成有电子束和光束的辐射的预定图案的基板表面。图案检查系统包括辐射并且向基板辐射电子束，检测单元，其检测归因于电子束的辐射的次要生成的信号;检索单元，其从由检测单元检测到的信号中检索图像以及图像处理单元，其根据图像的类型对检索到的图像进行分类。

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