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31. 发明授权

US06676497B1 Vibration damping in a chemical mechanical polishing system 有权
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US06676497B1
公开(公告)日：2004-01-13
申请号：US09658417
申请日：2000-09-08
申请人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
发明人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
IPC分类号： B24B700
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

32. 发明授权

US06485359B1 Platen arrangement for a chemical-mechanical planarization apparatus 失效
标题翻译：用于化学机械平面化装置的压板装置
公开(公告)号：US06485359B1
公开(公告)日：2002-11-26
申请号：US09663815
申请日：2000-09-15
申请人： Shijian Li , Fred C. Redeker , John White , Manoocher Birang
发明人： Shijian Li , Fred C. Redeker , John White , Manoocher Birang
IPC分类号： B24B2900
CPC分类号： B24B7/228 , B24B55/02 , B24D9/085
摘要： A chemical mechanical polishing machine is provided with a platen that has an integral sub-pad. A fixed abrasive polishing layer is mounted, without adhesive between the polishing layer and the sub-pad, to the top surface of the platen and the sub-pad. The polishing layer is vacuum mounted, for example, to the integral sub-pad of the platen. A cooling arrangement is provided in the platen that cools the polishing layer and improves product quality.
摘要翻译：化学机械抛光机设置有具有整体子垫的压板。将固定的研磨抛光层安装到抛光层和子焊盘之间，而不需要在压板和子焊盘的顶表面上。抛光层例如被真空安装到压板的整体子垫上。在压板中设置冷却装置，其冷却抛光层并提高产品质量。

33. 发明授权

US06179709B2 In-situ monitoring of linear substrate polishing operations 失效
标题翻译：线性衬底抛光操作的原位监控
公开(公告)号：US06179709B2
公开(公告)日：2001-01-30
申请号：US09244816
申请日：1999-02-04
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A substrate polishing scheme (apparatus and method) is described according to which a polishing surface of a polishing sheet is driven in a generally linear direction by a drive mechanism, a surface of a substrate is held against the polishing surface of the polishing sheet by a polishing head, and the substrate is probed through the polishing sheet by a monitoring system.
摘要翻译：描述了基板抛光方案（装置和方法），根据该基板抛光方案，研磨片的抛光表面通过驱动机构在大致线性方向上被驱动，基板的表面通过一个抛光头，并且通过监视系统通过抛光片探测基板。

34. 发明授权

US07331847B2 Vibration damping in chemical mechanical polishing system 失效
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US07331847B2
公开(公告)日：2008-02-19
申请号：US11333992
申请日：2006-01-17
申请人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
发明人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
IPC分类号： B24B7/00 , B24B9/00
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。抛光台包括压板，安装在压板上的振动阻尼器和安装在振动阻尼器上的衬底抛光垫。振动阻尼器包括当经受变形时不会反弹到其原始形状的材料。

35. 发明授权

US06858540B2 Selective removal of tantalum-containing barrier layer during metal CMP 失效
标题翻译：在金属CMP期间选择性去除含钽阻挡层
公开(公告)号：US06858540B2
公开(公告)日：2005-02-22
申请号：US10215521
申请日：2002-08-08
申请人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
IPC分类号： B24B1/00 , C09K13/00 , C11D1/00 , H01L21/285 , H01L21/302 , H01L21/321 , H01L21/768
CPC分类号： H01L21/3212 , H01L21/28568 , H01L21/7684
摘要： A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.
摘要翻译：一种用于进行化学机械抛光/平面化的方法，其提供从工件表面高度选择性地快速去除含Ta阻挡层，例如包括嵌入在介电层中的镶嵌型Cu基金属化图案的半导体晶片并且包括含Ta的金属扩散阻挡层，包括在CMP期间将水性液体组合物施加到工件表面或用于执行CMP的抛光垫，所述组合物包含至少一种还原剂以将过渡金属离子还原成低级价态，至少一种pH调节剂，至少一种金属腐蚀抑制剂和水，并且任选地包括至少一种过渡金属（例如Cu和Fe离子）的离子。根据另一个实施方案，含水液体组合物含有Ag离子，并且省略了至少一种还原剂。

36. 发明授权

US06832948B1 Thermal preconditioning fixed abrasive articles 失效
标题翻译：热预处理固定磨料制品
公开(公告)号：US06832948B1
公开(公告)日：2004-12-21
申请号：US09454354
申请日：1999-12-03
申请人： Manoocher Birang , Ramin Emami , Shijian Li , Fred C. Redeker
发明人： Manoocher Birang , Ramin Emami , Shijian Li , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/042 , B24B37/245
摘要： The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.
摘要翻译：固定磨料制品的CMP去除率增加，并且通过热预处理提高了晶片到晶片的均匀性。实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品，以增加和稳定Cu或Cu合金CMP去除速率。

37. 发明授权

US06790768B2 Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects 失效
标题翻译：用于抛光基底的方法和装置包括具有减小的形貌缺陷的导电和介电材料
公开(公告)号：US06790768B2
公开(公告)日：2004-09-14
申请号：US10025144
申请日：2001-12-18
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电材料。

38. 发明授权

US06659849B1 Platen with debris control for chemical mechanical planarization 失效
标题翻译：压板具有用于化学机械平面化的碎屑控制
公开(公告)号：US06659849B1
公开(公告)日：2003-12-09
申请号：US09705965
申请日：2000-11-03
申请人： Shijian Li , Jayakumar Gurusamy , Manoocher Birang , Fred C. Redeker
发明人： Shijian Li , Jayakumar Gurusamy , Manoocher Birang , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： B24B37/12 , B08B1/02 , B08B5/026 , B08B5/046 , B08B6/00 , B08B7/0028 , B24B21/10 , B24B21/14 , B24B53/017 , B24B53/10 , B24B57/02
摘要： Generally, a method and apparatus for cleaning a backside of a web of polishing material. In one embodiment, the apparatus includes a platen having a support surface adapted to support the backside the web and a web cleaner disposed on the platen and adjacent the backside of the web. A method for cleaning a web of polishing material is also provided. In one embodiment, the method includes the steps of supporting a portion of the web of polishing media on a platen, advancing a portion of the web onto the platen, and cleaning the unrolled portion of the web.
摘要翻译：通常，用于清洁抛光材料的网的背面的方法和设备。在一个实施例中，该设备包括具有支撑表面的压板，该支撑表面适于支撑该纸幅的背面，以及布置在该压板上并且邻近该纸幅背面的纸幅清洁剂。还提供了一种用于清洁抛光材料的网的方法。在一个实施例中，该方法包括以下步骤：将平板上的抛光介质的一部分支撑在压板上，将幅材的一部分推进到压板上，以及清洁纸幅的展开部分。

39. 发明授权

US06656842B2 Barrier layer buffing after Cu CMP 失效
标题翻译： Cu CMP后的阻隔层抛光
公开(公告)号：US06656842B2
公开(公告)日：2003-12-02
申请号：US09401643
申请日：1999-09-22
申请人： Shijian Li , Fred C. Redeker , Ramin Emami , Sen-Hou Ko , John M. White
发明人： Shijian Li , Fred C. Redeker , Ramin Emami , Sen-Hou Ko , John M. White
IPC分类号： H01L21302
CPC分类号： H01L21/3212
摘要： Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.
摘要翻译：首先通过CMP去除沉积的Cu，固定的研磨抛光垫停止在阻挡层上，例如Ta或TaN上。然后相对于Cu：Ta或TaN和Cu：氧化硅选择性地进行抛光以去除阻挡层并将凹陷控制在不大于100埃。

40. 发明授权

US06509269B2 Elimination of pad glazing for Al CMP 失效
标题翻译：消除Al CMP的衬垫玻璃
公开(公告)号：US06509269B2
公开(公告)日：2003-01-21
申请号：US09421452
申请日：1999-10-19
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： H01L21302
CPC分类号： B24B37/0056 , B24B37/044 , B24B53/017 , H01L21/3212
摘要： Polishing pad glazing during CMP of Al and Al alloys is eliminated or substantially reduced by utilizing a neutral polishing slurry containing a sufficient amount of a surfactant to prevent agglomeration of the abrasive particles with polishing by-products. Embodiments include CMP an Al or an Al alloy surface employing a slurry containing abrasive Al203 particles and about 0.02 to about 5 wt. % of a surfactant to prevent Al203 abrasive slurry particles from agglomerating with Al(OH)3 polishing by-products. Embodiments further include subsequent ex situ pad conditioning using an acid or base to dissolve, or a complexing agent to remove, Al(OH)3 polishing by-products.
摘要翻译：通过利用含有足够量的表面活性剂的中性抛光浆料来消除或大大减少Al和Al合金的CMP期间的抛光垫玻璃，以防止磨料颗粒与抛光副产物团聚。实施方案包括使用含有磨料Al 2 O 3颗粒和约0.02至约5重量％的浆料的CMP或Al合金表面。％的表面活性剂，以防止Al2O3磨料浆料颗粒与Al（OH）3抛光副产物附聚。实施例还包括使用酸或碱溶解的随后的非原位垫调节剂或用于去除Al（OH）3抛光副产物的络合剂。

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