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31. 发明授权

US6099649A Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal 失效
标题翻译：用于未反应的前体转化和流出物去除的化学气相沉积热阱
公开(公告)号：US6099649A
公开(公告)日：2000-08-08
申请号：US996735
申请日：1997-12-23
申请人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
发明人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
IPC分类号： B01D8/00 , B01D53/00 , B01D53/72 , C23C16/44 , C30B25/14 , H01J37/32 , C23C16/00
CPC分类号： C23C16/45561 , B01D53/002 , B01D53/72 , C23C16/4412 , C30B25/14 , H01J37/32834
摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
摘要翻译：热阱从CVD工艺的排气流转换未反应的有机金属膜前体。转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。热阱下游的冷阱将废气排出的废水冻结。由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。

32. 发明申请

US20100167503A1 Methods and systems of transferring, docking and processing substrates 有权
标题翻译：转移，对接和处理基材的方法和系统
公开(公告)号：US20100167503A1
公开(公告)日：2010-07-01
申请号：US12319231
申请日：2008-12-31
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L21/36 , H01L21/673
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67706 , H01L21/67712 , H01L21/67727 , H01L21/67736 , H01L21/67748 , Y10S414/135
摘要： In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.
摘要翻译：根据本文描述的一些实施例，提供了一种用于将衬底转移到两个或更多个工艺模块的方法，包括将至少一个衬底加载到一个或多个移动横向室中，所述移动横向室承载在邻近两个或更多个处理模块，并且其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。一个或多个驱动系统被致动以沿着轨道推进一个或多个移动横向室中的至少一个。所述至少一个移动传送室与所述处理模块中的至少一个对接，并且所述基板从所述移动横向室传送到所述至少一个处理模块。

33. 发明申请

US20070254481A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20070254481A1
公开(公告)日：2007-11-01
申请号：US11766121
申请日：2007-06-21
申请人： MORIS KORI , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： MORIS KORI , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/285
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

34. 发明申请

US20070197028A1 FORMATION OF BORIDE BARRIER LAYERS USING CHEMISORPTION TECHNIQUES 有权
标题翻译：使用化学技术形成硼化物屏障层
公开(公告)号：US20070197028A1
公开(公告)日：2007-08-23
申请号：US11739549
申请日：2007-04-24
申请人： Jeong Byun , Alfred Mak
发明人： Jeong Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a tungsten precursor to form a first boride-containing layer during a first sequential chemisorption process, and exposing the substrate to the boron-containing compound, the tungsten precursor, and ammonia to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process. In one example, the tungsten precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和钨前体以形成第一含硼化物层，以及在第二顺序化学吸附过程期间将所述衬底暴露于含硼化合物，钨前体和氨以在第一含硼化物层上形成第二含硼化物层。在一个实例中，钨前体含有六氟化钨，含硼化合物含有乙硼烷。在另一个实施方案中，在第二含硼化物层上沉积接触层。接触层可以含有钨并通过化学气相沉积工艺进行沉积。或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

35. 发明申请

US20060128132A1 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
公开(公告)号：US20060128132A1
公开(公告)日：2006-06-15
申请号：US11338565
申请日：2006-01-24
申请人： Ashok Sinha , Ming Xi , Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung
发明人： Ashok Sinha , Ming Xi , Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

36. 发明申请

US20050287807A1 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US20050287807A1
公开(公告)日：2005-12-29
申请号：US11206491
申请日：2005-08-18
申请人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
发明人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

37. 发明申请

US20050139160A1 Clamshell and small volume chamber with fixed substrate support 审中-公开
标题翻译：蛤壳式和小容积室具有固定衬底支撑
公开(公告)号：US20050139160A1
公开(公告)日：2005-06-30
申请号：US11059846
申请日：2005-02-16
申请人： Lawrence Lei , Alfred Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Glenn
发明人： Lawrence Lei , Alfred Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Glenn
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45521 , C23C16/45574 , H01L21/6719
摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.
摘要翻译：本发明的实施例通常涉及具有基板支撑件的小容积室。处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。该腔室还可包括设置在衬底支撑件上方的气体分配组件。第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。

38. 发明申请

US20050133166A1 Tuned potential pedestal for mask etch processing apparatus 审中-公开
标题翻译：用于掩模蚀刻处理装置的调谐电位基座
公开(公告)号：US20050133166A1
公开(公告)日：2005-06-23
申请号：US10782300
申请日：2004-02-18
申请人： Peter Satitpunwaycha , Khiem Nguyen , Alfred Mak , Kenneth Collins , Turgut Sahin
发明人： Peter Satitpunwaycha , Khiem Nguyen , Alfred Mak , Kenneth Collins , Turgut Sahin
IPC分类号： C23C16/458 , H01L21/00 , H01L21/687 , C23F1/00
CPC分类号： H01L21/68735 , H01J37/321 , H01J2237/2001 , H01L21/67069 , H01L21/68785
摘要： The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.
摘要翻译：本发明通常提供一种用于支撑基底的改进的基座。基座在等离子体蚀刻过程中具有最大的应用，例如石英光掩模或“掩模版”。基座限定主体，以及沿着主体的上表面的基板支撑基座。基板支撑基座具有外边缘，以及用于接收和支撑基板的中间基板支撑脊。中间基板支撑脊外侧的基板支撑基座的至少一部分由电介质材料制成。目的是通过光罩耦合更大的RF功率，以增强等离子体蚀刻工艺。

39. 发明申请

US20050059241A1 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
公开(公告)号：US20050059241A1
公开(公告)日：2005-03-17
申请号：US10951354
申请日：2004-09-29
申请人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

40. 发明授权

US06355106B1 Deposition of copper with increased adhesion 有权
标题翻译：沉积铜增加附着力
公开(公告)号：US06355106B1
公开(公告)日：2002-03-12
申请号：US09706321
申请日：2000-11-03
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： C23C1600
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译：一种用于改善铜层与晶片上的下层的粘合性的方法和装置。铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

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