专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060292874A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20060292874A1
公开(公告)日：2006-12-28
申请号：US11468156
申请日：2006-08-29
申请人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

2. 发明申请

US20070254481A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20070254481A1
公开(公告)日：2007-11-01
申请号：US11766121
申请日：2007-06-21
申请人： MORIS KORI , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： MORIS KORI , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/285
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

3. 发明申请

US20060128132A1 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
公开(公告)号：US20060128132A1
公开(公告)日：2006-06-15
申请号：US11338565
申请日：2006-01-24
申请人： Ashok Sinha , Ming Xi , Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung
发明人： Ashok Sinha , Ming Xi , Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

4. 发明申请

US20050059241A1 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
公开(公告)号：US20050059241A1
公开(公告)日：2005-03-17
申请号：US10951354
申请日：2004-09-29
申请人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

5. 发明申请

US20050287807A1 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US20050287807A1
公开(公告)日：2005-12-29
申请号：US11206491
申请日：2005-08-18
申请人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
发明人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

6. 发明申请

US20060223286A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20060223286A1
公开(公告)日：2006-10-05
申请号：US11423535
申请日：2006-06-12
申请人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
发明人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

7. 发明申请

US20060009034A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060009034A1
公开(公告)日：2006-01-12
申请号：US11038592
申请日：2005-01-19
申请人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
发明人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

8. 发明申请

US20070197027A1 FORMATION OF BORIDE BARRIER LAYERS USING CHEMISORPTION TECHNIQUES 有权
标题翻译：使用化学技术形成硼化物屏障层
公开(公告)号：US20070197027A1
公开(公告)日：2007-08-23
申请号：US11739545
申请日：2007-04-24
申请人： Jeong Byun , Alfred Mak
发明人： Jeong Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a metal precursor to form a first boride-containing layer during a first sequential chemisorption process and exposing the substrate to the boron-containing compound, the metal precursor, and a second precursor to form a second boride-containing layer on the first boride-containing layer during a second sequential chemisorption process. In one example, the metal precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和金属前体以形成第一含硼化物层，将基底暴露于含硼化合物，金属前体和第二前体，以在第二顺序化学吸附过程中在第一含硼化物层上形成第二含硼化物层。在一个实例中，金属前体含有六氟化钨，含硼化合物含有乙硼烷。在另一个实施方案中，在第二含硼化物层上沉积接触层。接触层可以含有钨并通过化学气相沉积工艺进行沉积。或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

9. 发明申请

US20050118804A1 Formation of boride barrier layers using chemisorption techniques 有权
标题翻译：使用化学吸附技术形成硼化物阻挡层
公开(公告)号：US20050118804A1
公开(公告)日：2005-06-02
申请号：US10993925
申请日：2004-11-19
申请人： Jeong Byun , Alfred Mak
发明人： Jeong Byun , Alfred Mak
IPC分类号： C23C16/38 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.
摘要翻译：公开了形成用于集成电路制造的硼化物层的方法。在一个实施方案中，硼化物层通过将含硼化合物和一种难熔金属化合物的单层化学吸附到基底上而形成。在替代实施例中，硼化物层具有复合结构。复合硼化物层结构包括两种或多种难熔金属。复合硼化物层通过在基材上依次化学吸附硼化合物的单层和两种或更多种难熔金属化合物而形成。

10. 发明申请

US20070197028A1 FORMATION OF BORIDE BARRIER LAYERS USING CHEMISORPTION TECHNIQUES 有权
标题翻译：使用化学技术形成硼化物屏障层
公开(公告)号：US20070197028A1
公开(公告)日：2007-08-23
申请号：US11739549
申请日：2007-04-24
申请人： Jeong Byun , Alfred Mak
发明人： Jeong Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a tungsten precursor to form a first boride-containing layer during a first sequential chemisorption process, and exposing the substrate to the boron-containing compound, the tungsten precursor, and ammonia to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process. In one example, the tungsten precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和钨前体以形成第一含硼化物层，以及在第二顺序化学吸附过程期间将所述衬底暴露于含硼化合物，钨前体和氨以在第一含硼化物层上形成第二含硼化物层。在一个实例中，钨前体含有六氟化钨，含硼化合物含有乙硼烷。在另一个实施方案中，在第二含硼化物层上沉积接触层。接触层可以含有钨并通过化学气相沉积工艺进行沉积。或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式