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31. 发明申请

US20110012694A1 RESONATOR AND RESONATOR ARRAY 有权
标题翻译：谐振器和谐振器阵列
公开(公告)号：US20110012694A1
公开(公告)日：2011-01-20
申请号：US12921008
申请日：2009-03-03
申请人： Akimasa Tamano , Mitsuhiro Okada , Kenichiro Suzuki
发明人： Akimasa Tamano , Mitsuhiro Okada , Kenichiro Suzuki
IPC分类号： H03H9/24
CPC分类号： H03H9/2447 , H03H9/02244 , H03H2009/02519
摘要： [Subject] An object of the present invention is to provide a resonator readily achieving a high resonance frequency without extreme downsizing and allowing for a high Q factor.[Solving Means] A resonator includes: a substrate serving as a base; a first beam having opposite ends fixed to the substrate via fixed connection portions, and having a vibration receiving location for providing linear reciprocating motion in a direction perpendicular to the longitudinal direction thereof; and second beams, branching toward one side from a plurality of branching locations different from the vibration receiving location in the first beam, for generating torsional vibration in accordance with the linear reciprocating motion. The resonator further includes a plurality of third beam, extending from the plurality of branching locations to a side opposite to the plurality of second beams, for generating torsional vibration.
摘要翻译：本发明的目的是提供一种容易实现高谐振频率的谐振器，而不会极大地减小尺寸并允许高Q因子。谐振器包括：作为基底的基板; 具有固定连接部固定在基板上的相对端部的第一梁，具有用于在与其长度方向垂直的方向上进行直线往复运动的振动接收位置; 以及第二梁，从与第一梁中的振动接收位置不同的多个分支位置朝向一侧分支，用于根据线性往复运动产生扭转振动。谐振器还包括从多个分支位置延伸到与多个第二光束相对的一侧的多个第三光束，用于产生扭转振动。

32. 发明授权

US07758920B2 Method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的方法和装置
公开(公告)号：US07758920B2
公开(公告)日：2010-07-20
申请号：US11496436
申请日：2006-08-01
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
摘要翻译：通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体由氮化，氮氧化和氧化气体组成。该方法交替地包括第一至第四步骤。第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

33. 发明申请

US20090215170A1 Plexin family-like polypeptide, DNA encoding the same and uses thereof 失效
标题翻译：丛状家族样多肽，编码它们的DNA及其用途
公开(公告)号：US20090215170A1
公开(公告)日：2009-08-27
申请号：US12318086
申请日：2008-12-22
申请人： Hisashi Koga , Osamu Ohara , Haruhiko Koseki , Mitsuhiro Okada , Akiyoshi Uemura , Hiroki Arakawa , Mitsuhiro Tada
发明人： Hisashi Koga , Osamu Ohara , Haruhiko Koseki , Mitsuhiro Okada , Akiyoshi Uemura , Hiroki Arakawa , Mitsuhiro Tada
IPC分类号： C12N5/10 , C07H21/04 , C12N15/63
CPC分类号： C07K14/705 , A61K38/00
摘要： The present invention is directed to a novel plexin family like DNA, a gene containing the DNA, novel polypeptide encoded by the DNA, a recombinant protein containing the polypeptide or heterologous polypeptide sequences, antibodies which bind to the polypeptides, methods for producing the polypeptides of the present invention. Conditions that can be diagnosed, screened, prevented, or treated by the compositions herein include prophylactic, angiogenesis and conservation of functions in various organs, angiogenesis at the time of tumor and regeneration of various organs, proliferation, differentiation and preservation of function of the cells in various organs, aging, and dysfunction of the present invention.
摘要翻译：本发明涉及一种新型的plexin家族如DNA，含有该DNA的基因，由该DNA编码的新型多肽，含有该多肽或异源多肽序列的重组蛋白，与该多肽结合的抗体，产生多肽的多肽的方法本发明。可以通过本文组合物诊断，筛选，预防或治疗的病症包括各种器官的功能的预防，血管生成和保护，肿瘤时的血管发生和各种器官的再生，细胞的功能的增殖，分化和保存在本发明的各种器官，衰老和功能障碍中。

34. 发明授权

US07520937B2 Thin film forming apparatus and method of cleaning the same 有权
标题翻译：薄膜形成装置及其清洗方法
公开(公告)号：US07520937B2
公开(公告)日：2009-04-21
申请号：US10927415
申请日：2004-08-26
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
IPC分类号： B08B3/12 , B08B6/00
CPC分类号： C23C16/4405 , B08B7/0035 , C23C16/4404 , Y10S438/905
摘要： The present invention relates to a technique for cleaning a thin film forming apparatus. In a typical embodiment, deposits originating from process gases for forming a thin film and deposited on the inner surface of a reaction tube are removed by etching by supplying a cleaning gas into the reaction tube while heating the interior of the reaction tube at a predetermined temperature. The inner surface of the reaction tube roughened by etching is subjected to a planarizing step. The planarizing step is performed by supplying a gas containing hydrogen fluoride into the reaction tube while keeping the interior of the reaction tube 2 at a low temperature, such as a room temperature. The planarizing step is effective in preventing the reduction of deposition rate in a thin film forming process.
摘要翻译：本发明涉及清洗薄膜形成装置的技术。在典型的实施方案中，通过在反应管内部以预定温度加热反应管的同时，通过蚀刻将清洗气体加入到反应管中，通过蚀刻来除去源自用于形成薄膜并沉积在反应管内表面上的工艺气体的沉积物。对通过蚀刻粗糙化的反应管的内表面进行平坦化步骤。通过在将反应管2的内部保持在室温等低温的同时，向反应管内供给含有氟化氢的气体来进行平坦化工序。平面化步骤在防止薄膜形成工艺中沉积速率的降低方面是有效的。

35. 发明授权

US07470637B2 Film formation apparatus and method of using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US07470637B2
公开(公告)日：2008-12-30
申请号：US11090082
申请日：2005-03-28
申请人： Mitsuhiro Okada , Toshiharu Nishimura , Atsushi Endo
发明人： Mitsuhiro Okada , Toshiharu Nishimura , Atsushi Endo
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , C23C16/4404 , H01L21/0217 , H01L21/02271 , H01L21/3185
摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.
摘要翻译：使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面平坦化气体。内表面包含石英或碳化硅的主要成分。在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。平坦化气体含氟和氟化氢。第二温度在300至800℃的范围内。

36. 发明申请

US20080317434A1 INFORMATION RECORDING/REPRODUCING APPARATUS 审中-公开
标题翻译：信息记录/再现设备
公开(公告)号：US20080317434A1
公开(公告)日：2008-12-25
申请号：US12104484
申请日：2008-04-17
申请人： Tomoyuki NONAKA , Keisuke Inata , Mitsuhiro Okada
发明人： Tomoyuki NONAKA , Keisuke Inata , Mitsuhiro Okada
IPC分类号： H04N5/91
CPC分类号： H04N5/782 , H04N5/775 , H04N5/913 , H04N9/8042
摘要： In increasing multi-channel broadcast situations, user friendliness is insufficient in that digest information can not be generated to satisfy users' demands to record two contents which are broadcast at the same time. In a reproduction apparatus which simultaneously records a plurality of digital video signals and creates a digest of each of the signals to shorten the reproduction time, particular frames of input digital video signals are recorded on a recording medium as reproduction position information. A first decoder decodes the digital video signals as a whole, and a second decoder decodes only digital video signals associated with the reproduction position information. The output of the second decoder is used as a digest generation signal of a digest generation module.
摘要翻译：在增加多渠道广播情况下，用户友好度不足，因为无法生成摘要信息以满足用户同时记录两个内容的要求。在同时记录多个数字视频信号并创建每个信号的摘要以缩短再现时间的再现装置中，输入数字视频信号的特定帧被记录在记录介质上作为再现位置信息。第一解码器整体解码数字视频信号，第二解码器仅解码与再现位置信息相关联的数字视频信号。第二解码器的输出用作摘要生成模块的摘要生成信号。

37. 发明授权

US07211514B2 Heat-processing method for semiconductor process under a vacuum pressure 失效
标题翻译：在真空压力下半导体工艺的热处理方法
公开(公告)号：US07211514B2
公开(公告)日：2007-05-01
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

38. 发明申请

US20060099805A1 Heat treating system and heat treating method 审中-公开
标题翻译：热处理系统和热处理方法
公开(公告)号：US20060099805A1
公开(公告)日：2006-05-11
申请号：US10532878
申请日：2003-10-29
申请人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
发明人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
IPC分类号： H01L21/44 , C23C16/00 , H05B3/02
CPC分类号： H01L21/67253 , F27B17/0025 , H01L21/67109
摘要： A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.
摘要翻译：本发明的热处理单元包括：保持多个基板的保持器; 保持器被输送到其中的反应容器; 将处理气体供给到反应容器内的处理气体供给机构; 以及加热机构，当供给处理气体时，加热反应容器进行成膜处理。将通过一批处理的基板的数量数据与处理气体的流量参数的目标数据相关联的流量参数表数据存储在流量参数表数据存储部。控制单元根据存储在流量参数表中的流量参数表数据，取决于通过一个批处理的待处理的基板的实际数量来获得处理气体的流量参数的目标数据。速率参数表数据存储部，并根据获得的目标数据来控制处理气体供给机构。流量参数的目标数据以这样一种方式确定，即在待处理的基板数目彼此不同的多个间歇处理中，成膜处理的速度是一致的。

39. 发明申请

US20060068598A1 Film formation apparatus and method of using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20060068598A1
公开(公告)日：2006-03-30
申请号：US11090082
申请日：2005-03-28
申请人： Mitsuhiro Okada , Toshiharu Nishimura , Atsushi Endo
发明人： Mitsuhiro Okada , Toshiharu Nishimura , Atsushi Endo
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , C23C16/4404 , H01L21/0217 , H01L21/02271 , H01L21/3185
摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.
摘要翻译：使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面平坦化气体。内表面包含石英或碳化硅的主要成分。在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。平坦化气体含氟和氟化氢。第二温度在300至800℃的范围内。

40. 发明申请

US20050284575A1 Processing system and operating method of processing system 审中-公开
标题翻译：处理系统和处理系统的操作方法
公开(公告)号：US20050284575A1
公开(公告)日：2005-12-29
申请号：US11196398
申请日：2005-08-04
申请人： Kazuhide Hasebe , Atsushi Endo , Mitsuhiro Okada , Jun Ogawa , Akihito Yamamoto , Takashi Nakao , Masaki Kamimura , Yukihiro Ushiku
发明人： Kazuhide Hasebe , Atsushi Endo , Mitsuhiro Okada , Jun Ogawa , Akihito Yamamoto , Takashi Nakao , Masaki Kamimura , Yukihiro Ushiku
IPC分类号： C23C16/44 , H01L21/00 , C23F1/00 , B44C1/22
CPC分类号： H01L21/67248 , C23C16/4405 , H01L21/67109
摘要： A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process. By means of the temperature changing unit, the target temperature is set to a temperature at which adhesion of reaction by-products to the specific portion may be inhibited, at the process to the substrate, while the target temperature is set to a temperature at which corrosion of the specific portion may be inhibited, at the cleaning process.
摘要翻译：本发明的处理系统包括：反应容器，其中放置有待处理的基板，处理气体供给机构，其将处理气体在处理过程中提供给反应容器;清洗气体供给机构在清洁过程中向反应容器提供腐蚀性清洁气体，连接到反应室的气体排出构件，加热反应容器的特定部分的加热单元和气体排出通路构件，温度检测单元，其检测特定部分的温度;温度控制单元，其基于由温度检测单元检测的检测值以特定部分变为预定目标温度的方式控制加热单元;温度控制单元，改变单元，其在过程到基板和清洁过程之间改变目标温度。通过温度变化单元，将目标温度设定为在基板处理时可以抑制反应副产物对特定部分的粘附的温度，同时将目标温度设定为温度在清洗过程中可能会抑制特定部分的腐蚀。

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