专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07520937B2 Thin film forming apparatus and method of cleaning the same 有权
标题翻译：薄膜形成装置及其清洗方法
公开(公告)号：US07520937B2
公开(公告)日：2009-04-21
申请号：US10927415
申请日：2004-08-26
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
IPC分类号： B08B3/12 , B08B6/00
CPC分类号： C23C16/4405 , B08B7/0035 , C23C16/4404 , Y10S438/905
摘要： The present invention relates to a technique for cleaning a thin film forming apparatus. In a typical embodiment, deposits originating from process gases for forming a thin film and deposited on the inner surface of a reaction tube are removed by etching by supplying a cleaning gas into the reaction tube while heating the interior of the reaction tube at a predetermined temperature. The inner surface of the reaction tube roughened by etching is subjected to a planarizing step. The planarizing step is performed by supplying a gas containing hydrogen fluoride into the reaction tube while keeping the interior of the reaction tube 2 at a low temperature, such as a room temperature. The planarizing step is effective in preventing the reduction of deposition rate in a thin film forming process.
摘要翻译：本发明涉及清洗薄膜形成装置的技术。在典型的实施方案中，通过在反应管内部以预定温度加热反应管的同时，通过蚀刻将清洗气体加入到反应管中，通过蚀刻来除去源自用于形成薄膜并沉积在反应管内表面上的工艺气体的沉积物。对通过蚀刻粗糙化的反应管的内表面进行平坦化步骤。通过在将反应管2的内部保持在室温等低温的同时，向反应管内供给含有氟化氢的气体来进行平坦化工序。平面化步骤在防止薄膜形成工艺中沉积速率的降低方面是有效的。

2. 发明申请

US20050066993A1 Thin film forming apparatus and method of cleaning the same 有权
标题翻译：薄膜形成装置及其清洗方法
公开(公告)号：US20050066993A1
公开(公告)日：2005-03-31
申请号：US10927415
申请日：2004-08-26
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
IPC分类号： H01L21/304 , B08B3/12 , B08B6/00 , B08B7/00 , C23C16/44 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/4405 , B08B7/0035 , C23C16/4404 , Y10S438/905
摘要： The present invention relates to a technique for cleaning a thin film forming apparatus. In a typical embodiment, deposits originating from process gases for forming a thin film and deposited on the inner surface of a reaction tube are removed by etching by supplying a cleaning gas into the reaction tube while heating the interior of the reaction tube at a predetermined temperature. The inner surface of the reaction tube roughened by etching is subjected to a planarizing step. The planarizing step is performed by supplying a gas containing hydrogen fluoride into the reaction tube while keeping the interior of the reaction tube 2 at a low temperature, such as a room temperature. The planarizing step is effective in preventing the reduction of deposition rate in a thin film forming process.
摘要翻译：本发明涉及清洗薄膜形成装置的技术。在典型的实施方案中，通过在反应管内部以预定温度加热反应管的同时，通过蚀刻将清洗气体加入到反应管中，通过蚀刻来除去源自用于形成薄膜并沉积在反应管内表面上的工艺气体的沉积物。对通过蚀刻粗糙化的反应管的内表面进行平坦化步骤。通过在将反应管2的内部保持在室温等低温的同时，向反应管内供给含有氟化氢的气体来进行平坦化工序。平面化步骤在防止薄膜形成工艺中沉积速率的降低方面是有效的。

3. 发明授权

US07758920B2 Method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的方法和装置
公开(公告)号：US07758920B2
公开(公告)日：2010-07-20
申请号：US11496436
申请日：2006-08-01
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
摘要翻译：通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体由氮化，氮氧化和氧化气体组成。该方法交替地包括第一至第四步骤。第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

4. 发明授权

US07211514B2 Heat-processing method for semiconductor process under a vacuum pressure 失效
标题翻译：在真空压力下半导体工艺的热处理方法
公开(公告)号：US07211514B2
公开(公告)日：2007-05-01
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

5. 发明申请

US20060099805A1 Heat treating system and heat treating method 审中-公开
标题翻译：热处理系统和热处理方法
公开(公告)号：US20060099805A1
公开(公告)日：2006-05-11
申请号：US10532878
申请日：2003-10-29
申请人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
发明人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
IPC分类号： H01L21/44 , C23C16/00 , H05B3/02
CPC分类号： H01L21/67253 , F27B17/0025 , H01L21/67109
摘要： A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.
摘要翻译：本发明的热处理单元包括：保持多个基板的保持器; 保持器被输送到其中的反应容器; 将处理气体供给到反应容器内的处理气体供给机构; 以及加热机构，当供给处理气体时，加热反应容器进行成膜处理。将通过一批处理的基板的数量数据与处理气体的流量参数的目标数据相关联的流量参数表数据存储在流量参数表数据存储部。控制单元根据存储在流量参数表中的流量参数表数据，取决于通过一个批处理的待处理的基板的实际数量来获得处理气体的流量参数的目标数据。速率参数表数据存储部，并根据获得的目标数据来控制处理气体供给机构。流量参数的目标数据以这样一种方式确定，即在待处理的基板数目彼此不同的多个间歇处理中，成膜处理的速度是一致的。

6. 发明申请

US20050284575A1 Processing system and operating method of processing system 审中-公开
标题翻译：处理系统和处理系统的操作方法
公开(公告)号：US20050284575A1
公开(公告)日：2005-12-29
申请号：US11196398
申请日：2005-08-04
申请人： Kazuhide Hasebe , Atsushi Endo , Mitsuhiro Okada , Jun Ogawa , Akihito Yamamoto , Takashi Nakao , Masaki Kamimura , Yukihiro Ushiku
发明人： Kazuhide Hasebe , Atsushi Endo , Mitsuhiro Okada , Jun Ogawa , Akihito Yamamoto , Takashi Nakao , Masaki Kamimura , Yukihiro Ushiku
IPC分类号： C23C16/44 , H01L21/00 , C23F1/00 , B44C1/22
CPC分类号： H01L21/67248 , C23C16/4405 , H01L21/67109
摘要： A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process. By means of the temperature changing unit, the target temperature is set to a temperature at which adhesion of reaction by-products to the specific portion may be inhibited, at the process to the substrate, while the target temperature is set to a temperature at which corrosion of the specific portion may be inhibited, at the cleaning process.
摘要翻译：本发明的处理系统包括：反应容器，其中放置有待处理的基板，处理气体供给机构，其将处理气体在处理过程中提供给反应容器;清洗气体供给机构在清洁过程中向反应容器提供腐蚀性清洁气体，连接到反应室的气体排出构件，加热反应容器的特定部分的加热单元和气体排出通路构件，温度检测单元，其检测特定部分的温度;温度控制单元，其基于由温度检测单元检测的检测值以特定部分变为预定目标温度的方式控制加热单元;温度控制单元，改变单元，其在过程到基板和清洁过程之间改变目标温度。通过温度变化单元，将目标温度设定为在基板处理时可以抑制反应副产物对特定部分的粘附的温度，同时将目标温度设定为温度在清洗过程中可能会抑制特定部分的腐蚀。

7. 发明授权

US07427572B2 Method and apparatus for forming silicon nitride film 有权
标题翻译：用于形成氮化硅膜的方法和装置
公开(公告)号：US07427572B2
公开(公告)日：2008-09-23
申请号：US11186892
申请日：2005-07-22
申请人： Kazuhide Hasebe , Mitsuhiro Okada
发明人： Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/56 , H01L21/0228 , H01L21/0234 , H01L21/3185
摘要： A method for forming a silicon nitride film first deposits a silicon nitride film on a target substrate by CVD in a process field within a reaction container. This step is arranged to supply a first process gas containing a silane family gas and a second process gas containing a nitriding gas to the process field, and set the process field at a first temperature and a first pressure, for a first time period. The method then nitrides a surface of the silicon nitride film in the process field. This step is arranged to supply a surface-treatment gas containing a nitriding gas to the process field without supplying the first process gas, and set the process field at a second temperature and a second pressure, for a second time period shorter than the first time period.
摘要翻译：用于形成氮化硅膜的方法首先在反应容器内的工艺场中通过CVD沉积目标衬底上的氮化硅膜。该步骤被布置成将含有硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体供应到工艺现场，并将工艺场设置在第一温度和第一压力下，持续第一时间段。该方法然后在工艺领域中氮化氮化硅膜的表面。该步骤被布置成在不提供第一处理气体的情况下将含有氮化气体的表面处理气体供给到处理场，并将处理场设置在第二温度和第二压力下，比第一次短期。

8. 发明申请

US20060207504A1 Film formation method and apparatus for semiconductor process 审中-公开
公开(公告)号：US20060207504A1
公开(公告)日：2006-09-21
申请号：US11367339
申请日：2006-03-06
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Chaeho Kim , Byounghoon Lee , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Chaeho Kim , Byounghoon Lee , Pao-Hwa Chou
IPC分类号： C23C16/00
CPC分类号： C23C16/45512 , C23C16/345 , C23C16/45531 , C23C16/45542 , C23C16/45578 , C23C16/509
摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

9. 发明申请

US20050095826A1 Heat-processing method and apparatus for semiconductor process 失效
标题翻译：半导体工艺的加热方法和装置
公开(公告)号：US20050095826A1
公开(公告)日：2005-05-05
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/324 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/24
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

10. 发明申请

US20080264339A1 Film forming method, film forming system and recording medium 有权
标题翻译：成膜方法，成膜系统和记录介质
公开(公告)号：US20080264339A1
公开(公告)日：2008-10-30
申请号：US12213574
申请日：2008-06-20
申请人： Kazuhide Hasebe , Mitsuhiro Okada
发明人： Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： B05C11/00
CPC分类号： C23C16/52 , C23C16/4408
摘要： After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.
摘要翻译：氮化硅膜通过成膜工艺在反应容器中形成在氮化硅膜上之后，通过清洗配方规定的清洗方法处理反应容器，与成膜工艺相容，通过除去表面来抑制气体和颗粒的产生沉积在反应容器内表面上的部分薄膜，并导致气体和颗粒的产生。将保持多个晶片W的晶片舟皿25装载到反应容器2中，并且通过由成膜配方1指定的成膜工艺处理晶片W，该成膜方法指定例如Si 2 O 3， Cl 2气体和NH 3气体作为成膜气体。随后，自动选择指定与成膜过程相容的清洗过程的清洗配方1，并通过清洗配方1规定的清洗处理来处理反应容器2。从指定与成膜过程相容的清洗处理的多个清洗配方自动选择清洗配方。清洗时间的不必要的延长被抑制，反应容器2可以通过与成膜过程相容的适当清洗过程进行处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式