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1. 发明授权

US07211514B2 Heat-processing method for semiconductor process under a vacuum pressure 失效
标题翻译：在真空压力下半导体工艺的热处理方法
公开(公告)号：US07211514B2
公开(公告)日：2007-05-01
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

2. 发明申请

US20050095826A1 Heat-processing method and apparatus for semiconductor process 失效
标题翻译：半导体工艺的加热方法和装置
公开(公告)号：US20050095826A1
公开(公告)日：2005-05-05
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/324 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/24
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

3. 发明申请

US20090104760A1 VERTICAL CVD APPPARATUS FOR FORMING SILICON-GERMANIUM FILM 失效
标题翻译：用于形成硅 - 锗膜的垂直CVD涂层
公开(公告)号：US20090104760A1
公开(公告)日：2009-04-23
申请号：US12341642
申请日：2008-12-22
申请人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： H01L21/205
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译：布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。共同供应系统包括设置在不同高度的多个供应口。

4. 发明授权

US07648895B2 Vertical CVD apparatus for forming silicon-germanium film 失效
标题翻译：用于形成硅 - 锗膜的垂直CVD装置
公开(公告)号：US07648895B2
公开(公告)日：2010-01-19
申请号：US12341642
申请日：2008-12-22
申请人： Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： H01L21/00
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译：布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。共同供应系统包括设置在不同高度的多个供应口。

5. 发明申请

US20050181586A1 Vertical CVD apparatus for forming silicon-germanium film 审中-公开
标题翻译：用于形成硅 - 锗膜的垂直CVD装置
公开(公告)号：US20050181586A1
公开(公告)日：2005-08-18
申请号：US10965789
申请日：2004-10-18
申请人： Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki Kurokawa , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： C23C16/42 , C23C16/22 , C23C16/455 , H01L21/205 , H01L21/265 , H01L21/285
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译：布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。共同供应系统包括设置在不同高度的多个供应口。

6. 发明申请

US20060099805A1 Heat treating system and heat treating method 审中-公开
标题翻译：热处理系统和热处理方法
公开(公告)号：US20060099805A1
公开(公告)日：2006-05-11
申请号：US10532878
申请日：2003-10-29
申请人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
发明人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
IPC分类号： H01L21/44 , C23C16/00 , H05B3/02
CPC分类号： H01L21/67253 , F27B17/0025 , H01L21/67109
摘要： A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.
摘要翻译：本发明的热处理单元包括：保持多个基板的保持器; 保持器被输送到其中的反应容器; 将处理气体供给到反应容器内的处理气体供给机构; 以及加热机构，当供给处理气体时，加热反应容器进行成膜处理。将通过一批处理的基板的数量数据与处理气体的流量参数的目标数据相关联的流量参数表数据存储在流量参数表数据存储部。控制单元根据存储在流量参数表中的流量参数表数据，取决于通过一个批处理的待处理的基板的实际数量来获得处理气体的流量参数的目标数据。速率参数表数据存储部，并根据获得的目标数据来控制处理气体供给机构。流量参数的目标数据以这样一种方式确定，即在待处理的基板数目彼此不同的多个间歇处理中，成膜处理的速度是一致的。

7. 发明授权

US08168270B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US08168270B2
公开(公告)日：2012-05-01
申请号：US11896752
申请日：2007-09-05
申请人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
发明人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
IPC分类号： C23C16/513
CPC分类号： C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45544
摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.
摘要翻译：在目标基板上通过CVD形成氧化膜，在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中，包含氧化气体的第二工艺气体和包括初步处理气体的第三工艺气体。第一步骤包括供给由激励机构激励的第三处理气体的激发期，由此通过预处理气体基团对目标基板进行预处理。第二步进行第一处理气体的供给，从而将膜源元件吸附在目标基板上。第三步骤包括供给由激励机构激励的第二处理气体的激励周期，从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。

8. 发明申请

US20080095678A1 Oxidation apparatus and method for semiconductor process 有权
标题翻译：半导体工艺的氧化装置及方法
公开(公告)号：US20080095678A1
公开(公告)日：2008-04-24
申请号：US11907968
申请日：2007-10-18
申请人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
IPC分类号： B01J19/00
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation apparatus for a semiconductor process includes a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field of a process container through a gas supply port disposed adjacent to target substrates on one side of the process field. The gas supply port includes a plurality of gas spouting holes arrayed over a length corresponding to the process field in a vertical direction. A heater is disposed around the process container and configured to heat the process field. A control section is preset to perform control such that the oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field, and an oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.
摘要翻译：一种用于半导体工艺的氧化设备包括一个气体供给系统，该气体供给系统被配置为通过与处理场一侧的目标基板相邻设置的气体供给口向处理容器的处理区域供给氧化气体和脱氧气体。气体供给口包括在垂直方向上与处理场对应的长度排列的多个气体喷出孔。加热器设置在处理容器周围并且被配置为加热过程场。控制部被设定为进行控制，使得氧化气体和脱氧气体彼此反应，从而在工艺场内产生氧自由基和羟基自由基，并且在靶的表面上进行氧化处理通过使用氧自由基和羟基自由基来形成底物。

9. 发明申请

US20080057199A1 Oxidation method and apparatus for semiconductor process 有权
标题翻译：半导体工艺的氧化方法和装置
公开(公告)号：US20080057199A1
公开(公告)日：2008-03-06
申请号：US11892949
申请日：2007-08-28
申请人： Takehiko Fujita , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
发明人： Takehiko Fujita , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： C23C16/455
CPC分类号： C30B33/005 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.
摘要翻译：在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。一种或两种氧化气体和脱氧气体被激活。使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

10. 发明申请

US20080081104A1 Film formation method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的成膜方法和装置
公开(公告)号：US20080081104A1
公开(公告)日：2008-04-03
申请号：US11902782
申请日：2007-09-25
申请人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
发明人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
IPC分类号： C23C16/44
CPC分类号： C23C16/509 , C23C16/402 , C23C16/45542 , C23C16/45546 , H01J37/3244 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228
摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.
摘要翻译：在选择性地供给包括硅源气体的第一工艺气体和包括氧化气体的第二工艺气体的工艺领域中，通过CVD在目标衬底上形成氧化物膜。氧化膜是通过循环执行而形成的，每个循环包括第一和第二步骤。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化目标衬底表面上的吸附层。硅源气体是一价或二价氨基硅烷气体，并且每个循环被设置为使用低于用于三价氨基硅烷气体的工艺温度的工艺温度。

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