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31. 发明申请

US20070056929A1 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070056929A1
公开(公告)日：2007-03-15
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： C23F1/00 , G01L21/30 , H01L21/306 , H01L21/302 , G01R31/00
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

32. 发明申请

US20050133162A1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20050133162A1
公开(公告)日：2005-06-23
申请号：US10784275
申请日：2004-02-24
申请人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
发明人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
IPC分类号： H01L21/3065 , C23F4/00 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.
摘要翻译：一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁的10％的接地导电部件21a 内壁101的区域，具有允许来自等离子体的直流电流流过的结构，其中由导电构件21形成的直流接地位于等离子体（或等离子体密度）的浮动电位高于位于晶片保持电极14附近的等离子体9的浮动电位，其中存在相对较大的壁切屑。

33. 发明申请

US20050072444A1 Method for processing plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置的处理方法
公开(公告)号：US20050072444A1
公开(公告)日：2005-04-07
申请号：US10791856
申请日：2004-03-04
申请人： Shigeru Shirayone , Tetsuo Ono , Naoshi Itabashi , Motohiko Yoshigai , Takahiro Abe , Takahiro Shimomura , Hiroyuki Kitsunai
发明人： Shigeru Shirayone , Tetsuo Ono , Naoshi Itabashi , Motohiko Yoshigai , Takahiro Abe , Takahiro Shimomura , Hiroyuki Kitsunai
IPC分类号： B08B7/00 , H01L21/3213 , B08B3/12
CPC分类号： H01J37/32082 , B08B7/0035 , H01J2237/334 , H01L21/32136
摘要： A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.
摘要翻译：一种用于处理具有用于在处理室内产生等离子体的等离子体产生装置3,8,10,13至15的等离子体处理装置的方法，用于向要处理的物体17施加高频电力的高频电力施加装置18 ，排气装置7连接并能够将其内部抽真空的处理室1和用于处理室的气体供给装置（未示出），其中该方法包括将Si晶片17安装在用于保持的电极4上要处理的物体，将氢溴酸气体和氯气引入处理室并产生等离子体，以及去除附着在处理室内部的铝基沉积物。

34. 发明授权

US08865403B2 Nucleic acid analyzing device and nucleic acid analyzer 有权
标题翻译：核酸分析装置和核酸分析仪
公开(公告)号：US08865403B2
公开(公告)日：2014-10-21
申请号：US12997469
申请日：2009-05-13
申请人： Masatoshi Narahara , Toshiro Saito , Naoshi Itabashi , Jiro Yamamoto , Hiroyuki Uchiyama
发明人： Masatoshi Narahara , Toshiro Saito , Naoshi Itabashi , Jiro Yamamoto , Hiroyuki Uchiyama
IPC分类号： C12Q1/68 , C12M1/36 , G01N21/00 , G01N21/64
CPC分类号： G01N21/648
摘要： An object of the present invention relates to distinguishing, from a fluorophore of an unreacted substrate, a single fluorophore attached to a nucleotide that is incorporated into a probe by a nucleic acid synthesis. The present invention relates to a nucleic acid analyzing device that analyzes a nucleic acid in sample by fluorescence, wherein a localized surface plasmon is generated by illumination, and a probe for analyzing the nucleic acid in the sample is on the site where the surface plasmon is generated. According to the present invention, since it is possible to efficiently produce fluorescence intensifying effects due to the surface plasmon and to immobilize the probe to a region within the reach of the fluorescence intensifying effects, it becomes possible to measure a nucleic acid synthesis without removing unreacted nucleotide to which fluorophores are attached.
摘要翻译：本发明的目的在于从未反应的底物的荧光团区分与通过核酸合成并入探针中的核苷酸连接的单个荧光团。本发明涉及通过荧光分析样品中的核酸的核酸分析装置，其中通过照射产生局部表面等离子体激元，并且用于分析样品中的核酸的探针位于表面等离子体为生成。根据本发明，由于可以有效地产生由于表面等离子体激元引起的荧光增强作用并且将探针固定在荧光增强作用范围内的区域，因此可以测量核酸合成而不去除未反应的附着有荧光团的核苷酸。

35. 发明申请

US20130146763A1 Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof 有权
标题翻译：图像处理装置，带电粒子束装置，带电粒子束装置调整样品及其制造方法
公开(公告)号：US20130146763A1
公开(公告)日：2013-06-13
申请号：US13700096
申请日：2011-05-25
申请人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
发明人： Hiroki Kawada , Osamu Inoue , Miyako Matsui , Takahiro Kawasaki , Naoshi Itabashi , Takashi Takahama , Katsumi Setoguchi , Osamu Komuro
IPC分类号： G01B15/00 , G06K9/62
CPC分类号： G01B15/00 , G06K9/6201 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01J2237/2826 , Y10T428/24355
摘要： An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.
摘要翻译：本发明的目的是提供一种快速且精确地测量或评估视野中的失真和带电粒子束装置的图像处理装置。为了实现该目的，提出了一种图像处理装置等，其获取成像目标的第一区域的第一图像和位于与第一区域不同的位置的第二区域的第二图像，并且部分地与所述第一区域确定所述第二图像中的测量点和所述第二图像的与所述第一图像和所述第二图像的重叠区域中的多个位置的特定区域相对应的第二部分之间的距离。

36. 发明申请

US20120241284A1 Plasma Sterilization and Cleaning Treatment Device for Escalator, and Escalator Using the Same 有权
标题翻译：自动扶梯等离子灭菌清洗处理装置及其自动扶梯
公开(公告)号：US20120241284A1
公开(公告)日：2012-09-27
申请号：US13342726
申请日：2012-01-03
申请人： Hiroyuki KOBAYASHI , Takumi Tandou , Naoshi Itabashi
发明人： Hiroyuki KOBAYASHI , Takumi Tandou , Naoshi Itabashi
IPC分类号： B66B31/02 , B05C9/02
CPC分类号： B66B31/02 , A61L2/14
摘要： Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals or UV light; an enclosure for housing the plasma source; a power source for generating plasma; a fan for generating relatively negative pressure in the enclosure; filter units for removing removed bacteria, viruses, and organic matters such as hand marks; and filter plates located backward and forward of a moving direction of the hand rail in the enclosure along the hand rail is provided.
摘要翻译：执行自动扶梯扶手的灭菌和清洁。包括扶手的灭菌和清洁装置; 用于用离子或自由基或UV光照射扶手的等离子体源; 用于容纳等离子体源的外壳; 用于产生等离子体的电源; 用于在外壳中产生相对负压的风扇; 用于除去去除的细菌，病毒和有机物质如手标的过滤单元; 并且提供沿着手导轨位于外壳中的手轨的移动方向的后方和前方的过滤板。

37. 发明申请

US20100258529A1 Plasma Processing Apparatus and Plasma Processing Method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20100258529A1
公开(公告)日：2010-10-14
申请号：US12496689
申请日：2009-07-02
申请人： Masahito MORI , Tsutomu Tetsuka , Naoshi Itabashi
发明人： Masahito MORI , Tsutomu Tetsuka , Naoshi Itabashi
IPC分类号： H01L21/306 , H01L21/02 , C23C16/513
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32155 , H01J37/32192 , H01J37/32935 , H01J37/3299
摘要： The invention provides a plasma processing apparatus comprising a means for detecting the apparatus condition related to the ion flux quantity of plasma (plasma density) and the distribution thereof for to stabilizing mass production and minimizing apparatus differences. The plasma processing apparatus comprises a vacuum reactor 108, a gas supply means 111, a pressure control means, a plasma source power supply 101, a lower electrode 113 on which an object to be processes 112 is placed within the vacuum reactor, and a high frequency bias power supply 117, further comprising a probe high frequency oscillation means 103 for supplying an oscillation frequency that differs from the plasma source power supply 101 and the high frequency bias power supply 117 into the plasma processing chamber, high frequency receivers 114 through 116 for receiving the high frequency supplied from the probe high frequency oscillation means 603 via a surface coming into contact with plasma, and a high frequency analysis means 110 for measuring the impedance per oscillation frequency within an electric circuit formed by the probe high frequency oscillation means 603 and the receivers 114 through 116, the reflectance and the transmittance, and the variation of harmonic components.
摘要翻译：本发明提供一种等离子体处理装置，其包括用于检测与等离子体的离子通量（等离子体密度）相关的装置条件及其分布的装置，用于稳定批量生产并使装置差异最小化。等离子体处理装置包括真空反应器108，气体供给装置111，压力控制装置，等离子体源电源101，待处理物体112放置在真空反应器内的下部电极113，以及高压高频偏置电源117，还包括用于将不同于等离子体源电源101和高频偏置电源117的振荡频率提供给等离子体处理室的探头高频振荡装置103，用于通过与等离子体接触的表面接收从探针高频振荡装置603提供的高频;以及高频分析装置110，用于测量由探针高频振荡装置603形成的电路内的每个振荡频率的阻抗，以及接收器114至116，反射率和透射率以及谐波分量的变化 s。

38. 发明授权

US07771607B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07771607B2
公开(公告)日：2010-08-10
申请号：US11696280
申请日：2007-04-04
申请人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
发明人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.
摘要翻译：一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中，直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。

39. 发明申请

US20090105980A1 PLASMA PROCESSING APPARATUS AND METHOD FOR DETECTING STATUS OF SAID APPARATUS 失效
标题翻译：等离子体处理装置和检测装置状态的方法
公开(公告)号：US20090105980A1
公开(公告)日：2009-04-23
申请号：US12025095
申请日：2008-02-04
申请人： Tsutomu TETSUKA , Naoshi Itabashi , Atsushi Itou
发明人： Tsutomu TETSUKA , Naoshi Itabashi , Atsushi Itou
IPC分类号： B05C11/00 , G06F19/00 , G01R23/16
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174 , H01J37/32935
摘要： The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.
摘要翻译：本发明提供了一种用于检测和管理具有高灵敏度的等离子体处理装置的状态以便能够进行长期稳定处理的方法。在包括真空处理室10，等离子体产生高频电源16和测量装置单元3的等离子体处理装置中，用于通过从包括a的处理装置反射的入射波53的反射波54估计装置的状态波形发生器32，VCO33，定向耦合器34，检测器35和测量数据处理单元36，将用于测量的频率扫描高频波53引入到不进行等离子体放电的处理室中，以便监视反射波54的吸收光谱频率的变化，从而监视处理装置的状态变化。

40. 发明申请

US20080257863A1 PLASMA PROCESSING APPARATUS AND METHOD FOR STABILIZING INNER WALL OF PROCESSING CHAMBER 审中-公开
标题翻译：等离子体加工装置和方法，用于稳定加工室内壁
公开(公告)号：US20080257863A1
公开(公告)日：2008-10-23
申请号：US11849264
申请日：2007-08-31
申请人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
发明人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
IPC分类号： C23F1/00
CPC分类号： H01J37/32477 , B08B7/0035 , H01J37/32935
摘要： A plasma processing apparatus is disclosed for removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus includes a plasma generating means, a monitor means for detecting the existence of a reaction product containing a material constituting an inner wall of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall of the processing chamber has exceeded a predetermined amount. The plasma processing apparatus is configured such that plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.
摘要翻译：公开了一种用于去除处理室中的沉积膜并抑制壁表面材料的腐蚀的等离子体处理装置。等离子体处理装置包括等离子体产生装置，用于检测含有构成处理室内壁的材料的反应产物的存在的监视装置，以及用于通知含有构成材料的反应产物的存在的报警装置处理室的内壁已经超过预定量。等离子体处理装置被配置为使得对于每个任意蚀刻工艺进行等离子体清洗，并且随后使用O 2气体或F气体执行壁表面稳定处理。

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