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1. 发明申请

US20120241284A1 Plasma Sterilization and Cleaning Treatment Device for Escalator, and Escalator Using the Same 有权
标题翻译：自动扶梯等离子灭菌清洗处理装置及其自动扶梯
公开(公告)号：US20120241284A1
公开(公告)日：2012-09-27
申请号：US13342726
申请日：2012-01-03
申请人： Hiroyuki KOBAYASHI , Takumi Tandou , Naoshi Itabashi
发明人： Hiroyuki KOBAYASHI , Takumi Tandou , Naoshi Itabashi
IPC分类号： B66B31/02 , B05C9/02
CPC分类号： B66B31/02 , A61L2/14
摘要： Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals or UV light; an enclosure for housing the plasma source; a power source for generating plasma; a fan for generating relatively negative pressure in the enclosure; filter units for removing removed bacteria, viruses, and organic matters such as hand marks; and filter plates located backward and forward of a moving direction of the hand rail in the enclosure along the hand rail is provided.
摘要翻译：执行自动扶梯扶手的灭菌和清洁。包括扶手的灭菌和清洁装置; 用于用离子或自由基或UV光照射扶手的等离子体源; 用于容纳等离子体源的外壳; 用于产生等离子体的电源; 用于在外壳中产生相对负压的风扇; 用于除去去除的细菌，病毒和有机物质如手标的过滤单元; 并且提供沿着手导轨位于外壳中的手轨的移动方向的后方和前方的过滤板。

2. 发明授权

US09034270B2 Plasma sterilization and cleaning treatment device for escalator, and escalator using the same 有权
标题翻译：用于自动扶梯的等离子灭菌和清洁处理装置，以及使用相同的自动扶梯
公开(公告)号：US09034270B2
公开(公告)日：2015-05-19
申请号：US13342726
申请日：2012-01-03
申请人： Hiroyuki Kobayashi , Takumi Tandou , Naoshi Itabashi
发明人： Hiroyuki Kobayashi , Takumi Tandou , Naoshi Itabashi
IPC分类号： B01J19/08 , B66B23/24 , B66B31/02 , A61L2/14
CPC分类号： B66B31/02 , A61L2/14
摘要： Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals or UV light; an enclosure for housing the plasma source; a power source for generating plasma; a fan for generating relatively negative pressure in the enclosure; filter units for removing removed bacteria, viruses, and organic matters such as hand marks; and filter plates located backward and forward of a moving direction of the hand rail in the enclosure along the hand rail is provided.
摘要翻译：执行自动扶梯扶手的灭菌和清洁。包括扶手的灭菌和清洁装置; 用于用离子或自由基或UV光照射扶手的等离子体源; 用于容纳等离子体源的外壳; 用于产生等离子体的电源; 用于在外壳中产生相对负压的风扇; 用于除去去除的细菌，病毒和有机物质如手标的过滤单元; 并且提供沿着手导轨位于外壳中的手轨的移动方向的后方和前方的过滤板。

3. 发明申请

US20130202479A1 PLASMA STERILIZER, PLASMA STERILIZATION SYSTEM, AND PLASMA STERILIZATION METHOD 审中-公开
标题翻译：等离子灭菌器，等离子体灭菌系统和等离子灭菌方法
公开(公告)号：US20130202479A1
公开(公告)日：2013-08-08
申请号：US13823122
申请日：2010-10-21
申请人： Takumi Tandou , Nobuyuki Negishi , Naoshi Itabashi
发明人： Takumi Tandou , Nobuyuki Negishi , Naoshi Itabashi
IPC分类号： A61L2/20
CPC分类号： A61L2/20 , A61L2/14 , G01N21/67 , H05H1/2406 , H05H2001/2443 , H05H2001/2462 , H05H2245/1225
摘要： An apparatus which determines activeness/inactiveness of bacteria in real time by measuring a specific light emission spectrum upon performing sterilization using plasma to highly efficiently sterilize is provided. As solving means, plasma is irradiated on a processing target from a plasma source connected to an alternate-current power supply and light emission of the processing target caused by the irradiation of plasma is detected by a light emission intensity detector unit. Particularly, by detecting wavelength intensity of hydrogen or hydroxyl group, activeness/inactiveness of bacteria can be determined at an early stage. Thus, an appropriate output of a power supply for sterilization can be controlled.
摘要翻译：提供了一种通过使用等离子体进行灭菌来测量特定发光光谱以实现高效灭菌来确定细菌活性/不活动性的装置。作为解决方案，等离子体从连接到交流电源的等离子体源照射在处理目标上，并且由发光强度检测器单元检测由等离子体的照射引起的处理目标的发光。特别地，通过检测氢或羟基的波长强度，可以在早期阶段确定细菌的活性/失活。因此，可以控制用于灭菌的电源的适当输出。

4. 发明授权

US08747763B2 Plasma sterilization apparatus 有权
标题翻译：等离子灭菌装置
公开(公告)号：US08747763B2
公开(公告)日：2014-06-10
申请号：US13441026
申请日：2012-04-06
申请人： Takumi Tandou , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
发明人： Takumi Tandou , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
IPC分类号： B01J19/08
CPC分类号： A61L2/14 , H05H1/2406 , H05H2001/2425
摘要： In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes (3, 2), a first dielectric body layer (1), and an insulating spacer (6). The first dielectric body layer (1) is disposed between the first and second electrodes (3, 2). The insulating spacer (6) is disposed between the first electrode (3) and the first dielectric body layer (1). The insulating spacer (6) has a lower permittivity than a permittivity of the first dielectric body layer (1).
摘要翻译：为了提供具有高等离子体产生效率的等离子体灭菌装置，该装置包括第一和第二电极（3,2），第一介电体层（1）和绝缘间隔物（6）。第一电介质体层（1）设置在第一和第二电极（3,2）之间。绝缘间隔物（6）设置在第一电极（3）和第一介电体层（1）之间。绝缘间隔物（6）的介电常数比第一绝缘体层（1）的介电常数低。

5. 发明申请

US20100006225A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100006225A1
公开(公告)日：2010-01-14
申请号：US12230464
申请日：2008-08-29
申请人： Kanetsu Yokogawa , Hiroyuki Kobayashi , Takumi Tandou , Kenji Maeda , Masaru Izawa
发明人： Kanetsu Yokogawa , Hiroyuki Kobayashi , Takumi Tandou , Kenji Maeda , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32651 , H01J37/32935
摘要： To make it possible to suppress deterioration of processing properties of a sample to be processed due to the distortion of ion sheath at the end portion of the sample to be processed or possible to maintain the condition for suppressing the deterioration, so that the acquisition rate of acceptable products can be increased, so as to thereby improve the yield. In a plasma processing apparatus, a minute hole 10 is provided in a focus ring 9 in the vicinity of the inner circumferential portion thereof. Current detecting means 11 is arranged in the bottom portion of the minute hole 10. A high-frequency power is supplied to the focus ring 9 via high-frequency power distributing means 16. A state of distortion of an ion sheath 18 is detected from an amount of current which is changed according to the amount of the high-frequency power supplied to the focus ring 9 and which is detected by current detecting means 11. Further, the amount of high-frequency power supplied to the focus ring 9 is controlled by a control section 21 so as to correct the detected distortion state.
摘要翻译：为了能够抑制由于待处理样品的端部处的离子鞘的变形而导致的待处理样品的加工性能的劣化，或者可以维持抑制劣化的条件，从而使得可以提高可接受的产品，从而提高产量。在等离子体处理装置中，微孔10设置在聚焦环9的内周部附近。电流检测装置11布置在微孔10的底部。高频功率通过高频功率分配装置16提供给聚焦环9.离子鞘18的变形状态从根据提供给对焦环9的高频功率的量而改变并由电流检测装置11检测的电流量。此外，提供给聚焦环9的高频功率的量由控制部分21，以校正检测到的失真状态。

6. 发明申请

US20120325146A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20120325146A1
公开(公告)日：2012-12-27
申请号：US13521467
申请日：2011-02-04
申请人： Hiroyuki Kobayashi , Kenji Maeda , Takumi Tandou , Shoichi Nakashima , Shigeru Ohno
发明人： Hiroyuki Kobayashi , Kenji Maeda , Takumi Tandou , Shoichi Nakashima , Shigeru Ohno
IPC分类号： C23C16/50 , C23C16/52
CPC分类号： H05H1/46 , C23C16/045 , C23C16/509 , C23C16/52 , C23C16/545 , H01J37/32082 , H01J37/32348 , H01J37/32825 , H05H1/2406 , H05H2001/4667
摘要： Disclosed is a plasma processing apparatus which performs plasma processing under substantially atmospheric pressure to a non-planar subject to be processed. In the plasma processing apparatus, a pair of conductive wires are disposed at an interval of 1 mm or less on a dielectric board that conforms with the shape of the subject, the conductive wires are covered with a dielectric thin film having a thickness of 1 mm or less by, for instance, thermally spraying a dielectric material over the conductive wires, and plasma is generated along the shape of subject by applying high-frequency power to the pair of conductive wires.
摘要翻译：公开了一种等离子体处理装置，其在基本上大气压下对待处理的非平面物体进行等离子体处理。在等离子体处理装置中，在与被检体的形状一致的电介质基板上，以1mm以下的间隔配置一对导线，导电线被厚度为1mm的电介质薄膜覆盖以下，例如通过在导电线上喷涂电介质材料，通过向该对导电线施加高频电力，沿着被检体的形状产生等离子体。

7. 发明申请

US20090277883A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20090277883A1
公开(公告)日：2009-11-12
申请号：US12193117
申请日：2008-08-18
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： B23K10/00
CPC分类号： H01L21/67109 , H01J37/32623 , H01J2237/2001
摘要： The present invention provides means for controlling the temperature of a semiconductor wafer rapidly and uniformly in plane during etching processing by a large quantity of input heat by use of a refrigerating system by the heat of evaporation. A ring-shaped refrigerant passage is formed in a sample stand. Since the heat transfer rate and pressure loss of a refrigerant increase from a refrigerant supply port to a refrigerant ejection port as dryness degrees increase, these must be restricted. Therefore, constructionally, a supply refrigerant quantity is controlled to prevent the refrigerant from completely evaporating within the refrigerant passage, and the sectional areas of the refrigerant passage increase successively from a first passage to a third passage.
摘要翻译：本发明提供了通过利用通过蒸发热使用制冷系统的大量输入热量来在蚀刻处理期间快速且均匀地控制半导体晶片的温度的装置。环状制冷剂通道形成在样品台中。由于制冷剂的传热速度和压力损失随着制冷剂供给口向制冷剂喷出口的增加而增加，因此必须限制。因此，在结构上，控制供给制冷剂量以防止制冷剂在制冷剂通道内完全蒸发，并且制冷剂通道的截面积从第一通道连续升高到第三通道。

8. 发明授权

US09368377B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09368377B2
公开(公告)日：2016-06-14
申请号：US11836219
申请日：2007-08-09
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/67 , H01L21/683 , H01J37/32 , C23C16/46 , F25B41/06
CPC分类号： H01L21/67109 , C23C16/463 , F25B41/062 , H01J37/32431 , H01J2237/2001 , H01L21/6831 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure.
摘要翻译：本发明提供了一种用于静电吸附电极的温度控制单元，其能够在宽的温度范围内快速控制晶片温度，而不会在施加高晶片偏置功率的同时进行高热输入蚀刻的同时不影响面内均匀性。设置在静电吸附电极中的制冷剂流路用作蒸发器。制冷剂流路连接到压缩机，冷凝器和第一膨胀阀，以形成直接膨胀型制冷循环。第二膨胀阀安装在静电吸附电极和压缩机之间，以调节制冷剂的流量。这使得可以压缩静电吸附电极的制冷剂流路中的制冷剂，并且通过提高制冷剂蒸发温度将晶片温度调节到高水平。此外，采用薄壁圆柱形制冷剂流动路径，使得薄壁圆筒仅由制冷剂压力略微变形。

9. 发明授权

US08833089B2 Plasma processing apparatus and maintenance method therefor 有权
标题翻译：等离子体处理装置及其维护方法
公开(公告)号：US08833089B2
公开(公告)日：2014-09-16
申请号：US12538986
申请日：2009-08-11
申请人： Takumi Tandou , Masaru Izawa
发明人： Takumi Tandou , Masaru Izawa
IPC分类号： F25B9/00 , F25B45/00 , H01J37/32
CPC分类号： H01J37/32091 , F25B45/00 , F25B2500/06 , H01J2237/2001
摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.
摘要翻译：在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护。在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂再次。

10. 发明申请

US20120273132A1 Vacuum Processing Apparatus And Plasma Processing Apparatus With Temperature Control Function For Wafer Stage 审中-公开
标题翻译：具有晶片级温度控制功能的真空处理装置和等离子体处理装置
公开(公告)号：US20120273132A1
公开(公告)日：2012-11-01
申请号：US13546071
申请日：2012-07-11
申请人： Takumi Tandou , Masaru Izawa
发明人： Takumi Tandou , Masaru Izawa
IPC分类号： H05H1/24 , B44C1/22
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A plasma processing apparatus includes a processing chamber, a wafer table, a refrigerant passage disposed inside the wafer table in which a refrigerant flows, a refrigeration cycle comprising the refrigerant passage in the wafer table as a first evaporator in which the refrigerant is evaporated as a result of a heat-exchange therein, a compressor, a condenser and an expansion valve, a second evaporator, and a controlling unit which adjusts a number of rotations of the compressor based upon a degree of dryness of the refrigerant at a position on the refrigeration cycle after passing through the first evaporation in a range in which dry-out does not occur in the first evaporator, and the dryness of the refrigerant being determined based upon an amount of a heat exchange during the evaporation of the refrigerant in the second evaporator.
摘要翻译：等离子体处理装置包括处理室，晶片台，布置在制冷剂流动的晶片台内部的制冷剂通道，制冷循环，其包括作为制冷剂蒸发的第一蒸发器的晶片台中的制冷剂通路，其中热交换的结果，压缩机，冷凝器和膨胀阀，第二蒸发器和控制单元，其基于制冷剂位置上的制冷剂的干燥程度来调节压缩机的转数在第一蒸发器中不发生干燥的范围内经过第一蒸发之后的循环，并且基于在第二蒸发器中的制冷剂的蒸发期间的热交换量来确定制冷剂的干燥度。

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