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31. 发明申请

US20090159423A1 Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
标题翻译：等离子室电极的非对称RF驱动
公开(公告)号：US20090159423A1
公开(公告)日：2009-06-25
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/00 , H01L21/3065 , B23H7/14
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

32. 发明授权

US08438990B2 Multi-electrode PECVD source 有权
标题翻译：多电极PECVD源
公开(公告)号：US08438990B2
公开(公告)日：2013-05-14
申请号：US12353638
申请日：2009-01-14
申请人： Jozef Kudela , John M. White
发明人： Jozef Kudela , John M. White
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/5096 , C23C16/54 , H01J37/32091 , H01J37/32183 , H01J37/3244 , H01J37/32568 , H01J37/32752
摘要： Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.
摘要翻译：本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。所述方法和装置通常包括多个电极。电极连接到RF电源，该电源使电极彼此相位不相位。相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。处理气体可以通过电极和/或电绝缘构件传送和/或抽出。由于等离子体可以通过差分RF源驱动电容耦合到其上，基板可能保持电浮置。

33. 发明授权

US08906813B2 SiOx process chemistry development using microwave plasma CVD 有权
标题翻译：使用微波等离子体CVD的SiOx工艺化学开发
公开(公告)号：US08906813B2
公开(公告)日：2014-12-09
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号： H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

34. 发明申请

US20110135844A1 LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING 有权
标题翻译：大面积等离子体加工室与电极射频匹配
公开(公告)号：US20110135844A1
公开(公告)日：2011-06-09
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/24 , C23C16/455 , C23C16/458 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

35. 发明授权

US08674844B2 Detecting plasma chamber malfunction 有权
标题翻译：检测等离子体室故障
公开(公告)号：US08674844B2
公开(公告)日：2014-03-18
申请号：US12661699
申请日：2010-03-19
申请人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
发明人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
IPC分类号： G08B21/00
CPC分类号： H01J37/32183 , H01J37/32935 , H01J37/3299
摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.
摘要翻译：通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

36. 发明申请

US20120103989A1 METHOD AND APPARATUS FOR SEALING AN OPENING OF A PROCESSING CHAMBER 有权
标题翻译：用于密封加工室的开口的方法和装置
公开(公告)号：US20120103989A1
公开(公告)日：2012-05-03
申请号：US13349307
申请日：2012-01-12
申请人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
发明人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
IPC分类号： B65D43/26
CPC分类号： C23C16/54 , C23C16/45517
摘要： A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译：提供一种用于密封处理室的开口的方法和装置。在一个实施例中，本发明通常提供集成在处理室的壁内的封闭构件，用于密封腔室壁内的开口。在另一个实施例中，本发明提供了一种封闭构件，其构造成将处理室的壁中的开口与室的内部密封。

37. 发明授权

US08083853B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US08083853B2
公开(公告)日：2011-12-27
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

38. 发明授权

US08728586B2 RF choke for gas delivery to an RF driven electrode in a plasma processing apparatus 有权
标题翻译：射频扼流圈，用于将气体输送到等离子体处理装置中的RF驱动电极
公开(公告)号：US08728586B2
公开(公告)日：2014-05-20
申请号：US12172029
申请日：2008-07-11
申请人： Jozef Kudela , Carl A. Sorensen , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , John M. White
IPC分类号： H05H1/46
CPC分类号： H01F17/06 , C23C16/455 , C23C16/505 , H01F27/08 , H01F2017/065 , H01J37/32082 , H01J37/3244 , H01J2237/0206 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
摘要翻译：在大面积等离子体处理系统中，工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。接地的气体供给管与喷头电气隔离。气体供给管不仅可以提供处理气体，还可以提供从远程等离子体源清洁气体到处理室。气体供给管的内部可以保持在低RF场或零RF场，以避免气体进料管内的过早气体击穿，这可能导致气体源和喷头之间的寄生等离子体形成。通过馈送气体通过RF扼流圈，RF场和处理气体可以通过公共位置被引入处理室，从而简化室设计。

39. 发明授权

US08343592B2 Asymmetrical RF drive for electrode of plasma chamber 有权
标题翻译：等离子体室用电极的非对称RF驱动
公开(公告)号：US08343592B2
公开(公告)日：2013-01-01
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/24 , H01L21/306 , C23C16/00
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

40. 发明申请

US20090151636A1 RPSC AND RF FEEDTHROUGH 审中-公开
标题翻译： RPSC和RF FEEDTHROUGH
公开(公告)号：US20090151636A1
公开(公告)日：2009-06-18
申请号：US12271613
申请日：2008-11-14
申请人： John M. White , Bradley O. Stimson , Jozef Kudela
发明人： John M. White , Bradley O. Stimson , Jozef Kudela
IPC分类号： C23C16/513 , C23C16/511
CPC分类号： H01J37/32697 , H01J37/32091 , H01J37/32192 , H01J37/32357 , H01J37/32862
摘要： The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber.
摘要翻译：本发明通常包括具有组合成单个单元的RF扼流圈和远程等离子体源的装置。工艺气体可以经由可被作为RF电极驱动的喷头组件引入室。气体供给管可以将处理气体和清洁气体提供给处理室。气体供给管的内部可以保持在零RF场，以避免气体进料管内的过早气体击穿，这可能在处理期间导致气体源和喷头之间的寄生等离子体形成。点燃气体供给管内的清洁气体等离子体允许等离子体更靠近处理室被点燃。因此，RF电流在沉积期间沿着设备的外部行进，并且在将等离子体馈送到处理室之前，微波电流点燃设备内的等离子体。

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