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31. 发明申请

US20110019707A1 LIGHT EMITTING DEVICE AND A METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110019707A1
公开(公告)日：2011-01-27
申请号：US12719484
申请日：2010-03-08
申请人： Takahiro SATO , Iwao Mitsuishi , Shinya Nunoue
发明人： Takahiro SATO , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01S5/323 , H01L33/50 , H01L33/52
CPC分类号： H01L33/504 , H01L33/507 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first wavelength conversion portion from the light source and configured to transmit the source light and the first light; and a second wavelength conversion portion provided at an opposite side of the light transmitting portion from the first wavelength conversion portion and configured to absorb at least one of the source light and the first light to emit second light having a wavelength different from the wavelength of the source light and also different from a wavelength of the first light. Part of the source light is configured to be taken to an outside of the light emitting device without passing through at least one of the first wavelength conversion portion and the second wavelength conversion portion.
摘要翻译：一种发光器件，包括：发光源的光源; 第一波长转换部分，用于吸收源光并发射具有不同于源光波长的波长的第一光; 光传输部分，设置在与光源相反的第一波长转换部分的相对侧并且被配置为透射源光和第一光; 以及第二波长转换部，其设置在所述透光部的与所述第一波长转换部的相反侧，并且被配置为吸收所述源光和所述第一光中的至少一个，以发射具有与所述第二波长的波长不同的波长的第二光源光并且也不同于第一光的波长。源光的一部分被配置为被带到发光器件的外部，而不通过第一波长转换部分和第二波长转换部分中的至少一个。

32. 发明授权

US08237350B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08237350B2
公开(公告)日：2012-08-07
申请号：US12985955
申请日：2011-01-06
申请人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori
发明人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori
IPC分类号： H01J1/62
CPC分类号： H01L33/504 , H01L2224/45144 , H01L2224/48247 , H01L2924/00
摘要： A light-emitting device includes a package having, on a surface thereof, a first portion surrounded by a second portion; a semiconductor blue color light-emitting element mounted on the first portion; a first transparent resin layer covering the semiconductor blue color light-emitting element and contacted with the first and second portions. The first transparent resin layer in cross section has an arch-like outer profile. A laminated body having in cross section an arch-like profile is formed on the first transparent resin layer with end faces of the laminated body being contacted with the second portion, and includes in order a red fluorescent layer, a yellow fluorescent layer, a second transparent resin layer and a green fluorescent layer, the second transparent resin layer having a center portion disposed between end face portions, the center portion having a larger thickness than thicknesses of the end face portions.
摘要翻译：发光装置包括在其表面上具有被第二部分包围的第一部分的封装; 安装在所述第一部分上的半导体蓝色发光元件; 覆盖半导体蓝色发光元件并与第一和第二部分接触的第一透明树脂层。第一透明树脂层的横截面具有拱形外部轮廓。在第一透明树脂层上形成具有拱形轮廓的层叠体，层叠体的端面与第二部分接触，并且依次包括红色荧光层，黄色荧光层，第二透明树脂层透明树脂层和绿色荧光层，所述第二透明树脂层具有设置在端面部之间的中心部分，所述中心部分的厚度大于所述端面部分的厚度。

33. 发明申请

US20110147775A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110147775A1
公开(公告)日：2011-06-23
申请号：US12874413
申请日：2010-09-02
申请人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
发明人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01L33/50
CPC分类号： H01L33/50 , H01L24/29 , H01L24/32 , H01L33/44 , H01L33/504 , H01L33/58 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.
摘要翻译：根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。第一波长转换层设置在与安装构件接触的元件和安装构件之间。第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。半导体发光元件设置在第二波长转换层和第一波长转换层之间。第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。透明层设置在元件和第二波长转换层之间。透明层对于第一，第二和第三光是透明的。

34. 发明申请

US20110177635A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110177635A1
公开(公告)日：2011-07-21
申请号：US13078240
申请日：2011-04-01
申请人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
发明人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
IPC分类号： H01L33/50
CPC分类号： F21K9/00 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light.
摘要翻译：发光器件包括：在其表面上形成有凹部的基板; 发射蓝光或近紫外光的第一光的发光元件; 树脂片，其是形成在所述基板上以覆盖所述发光元件的可变形树脂片; 在所述树脂片的所述第一区域上形成为半球形的第一透射层，并透射所述第一光; 颜色转换层，其包括将第一光转换成与第一光不同的波长的第二光和透射第一光的透射材料的荧光材料，以这种方式覆盖第一透射层的颜色转换层端部到达树脂片的上表面; 以及第二透射层，其以使得端部到达树脂片的上表面并且透射第一光和第二光的方式覆盖颜色转换层。

35. 发明授权

US07935978B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07935978B2
公开(公告)日：2011-05-03
申请号：US12401692
申请日：2009-03-11
申请人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
发明人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： F21K9/00 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light.
摘要翻译：发光器件包括：在其表面上形成有凹部的基板; 发射蓝光或近紫外光的第一光的发光元件; 树脂片，其是形成在所述基板上以覆盖所述发光元件的可变形树脂片; 在所述树脂片的所述第一区域上形成为半球形的第一透射层，并透射所述第一光; 颜色转换层，其包括将第一光转换成与第一光不同的波长的第二光和透射第一光的透射材料的荧光材料，以这种方式覆盖第一透射层的颜色转换层端部到达树脂片的上表面; 以及第二透射层，其以使得端部到达树脂片的上表面并且透射第一光和第二光的方式覆盖颜色转换层。

36. 发明授权

US08592850B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08592850B2
公开(公告)日：2013-11-26
申请号：US13677828
申请日：2012-11-15
申请人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
发明人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L24/29 , H01L24/32 , H01L33/44 , H01L33/504 , H01L33/58 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.
摘要翻译：根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。第一波长转换层设置在与安装构件接触的元件和安装构件之间。第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。半导体发光元件设置在第二波长转换层和第一波长转换层之间。第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。透明层设置在元件和第二波长转换层之间。透明层对于第一，第二和第三光是透明的。

37. 发明申请

US20100051988A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100051988A1
公开(公告)日：2010-03-04
申请号：US12401692
申请日：2009-03-11
申请人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
发明人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
IPC分类号： H01L33/00 , H01L21/00 , F21V9/16
CPC分类号： F21K9/00 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light.
摘要翻译：发光器件包括：在其表面上形成有凹部的基板; 发射蓝光或近紫外光的第一光的发光元件; 树脂片，其是形成在所述基板上以覆盖所述发光元件的可变形树脂片; 在所述树脂片的所述第一区域上形成为半球形的第一透射层，并透射所述第一光; 颜色转换层，其包括将第一光转换成与第一光不同的波长的第二光和透射第一光的透射材料的荧光材料，以这种方式覆盖第一透射层的颜色转换层端部到达树脂片的上表面; 以及第二透射层，其以使得端部到达树脂片的上表面并且透射第一光和第二光的方式覆盖颜色转换层。

38. 发明授权

US09105810B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09105810B2
公开(公告)日：2015-08-11
申请号：US13404607
申请日：2012-02-24
申请人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
发明人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。第一半导体层是第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并且是第二导电类型。反射电极设置在第二半导体层上并且包括Ag。氧化物层设置在反射电极上。氧化物层是绝缘的并且具有第一开口。含氧层设置在氧化物层上。含氮层是绝缘的，并且具有与第一开口连通的第二开口。

39. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

40. 发明授权

US09048362B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09048362B2
公开(公告)日：2015-06-02
申请号：US13405565
申请日：2012-02-27
申请人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
发明人： Shigeya Kimura , Yoshiyuki Harada , Hajime Nago , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , B82Y20/00 , H01S5/343 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
摘要翻译：根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分一部分。阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分一部分。

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