专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JPH06275617A OXIDATION RESISTANT COPPER THIN FILM, ITS MANUFACTURE, AND SEMICONDUCTOR DEVICE USING THE SAME 失效
公开(公告)号：JPH06275617A
公开(公告)日：1994-09-30
申请号：JP6545093
申请日：1993-03-24
申请人： HITACHI LTD
发明人： KUDO KAZUE , FUKADA SHINICHI , KIZAWA KENICHI , MINEMURA TETSUO
IPC分类号： H01L21/3205 , H01L23/52
摘要： PURPOSE:To improve oxidation resistance of a copper thin film, by a method wherein the surface layer of a copper thin film which is exposed to an oxidizing atmosphere contains the (111) face of oriented copper, and surfaces more than a specific value are constituted of (111) faces. CONSTITUTION:A thermal oxide film 9 is formed on an Si substrate 4. A W film 11 is formed on the film 9 by a sputtering method, and a copper film 10 is formed. Sputter etching is performed by applying a backward bias voltage to the copper film 10. Copper is sputtered on the copper film 10, and sputter etching is performed. By alternately repeating film formation and sputter etching, a copper film 10 of 500nm in thickness is formed. The copper (111) face is the most dense surface, and the etching rate, is small as compared with other lattice surfaces, so that the (111) face is formed 90% or more on the surface of the copper film. Thereby oxidation of a copper wiring film can be restrained.

32. 发明专利

JPH0567686A SEMICONDUCTOR DEVICE WIRING 失效
公开(公告)号：JPH0567686A
公开(公告)日：1993-03-19
申请号：JP22783591
申请日：1991-09-09
申请人： HITACHI LTD
发明人： FUKADA SHINICHI , SUWA MOTOHIRO , KUDO KAZUE
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE:To provide a wiring structure where a Cu wiring layer is protected against etching damage when a through-hole is provided to an interlayer insulating film without deteriorating the lower Cu wiring layer in characteristics. CONSTITUTION:A Cu wiring is formed into a four-layered structure composed of an adhesive layer, a Cu wiring layer 6, a barrier layer 9, and an etching stopper layer 8, etching damage 16 induced when a through-hole is provided to the insulating film 9 is prevented from spreading beyond the etching stopper 8. By this setup, when a through-hole is provided to an interlayer insulating film on a wiring, the wiring can be protected against etching damage by an etching stopper layer.

33. 发明专利

JPS6369994A METHOD AND APPARATUS FOR WORKING MICRO FABRICATION PART 失效
公开(公告)号：JPS6369994A
公开(公告)日：1988-03-30
申请号：JP21166286
申请日：1986-09-10
申请人： HITACHI LTD , HITACHI PLANT ENG & CONSTR CO
发明人： KUDO KAZUE , KOZONO YUZO , HANAZONO MASANOBU , OGINO HIROYUKI , FUKUZAWA KUNIYUKI
IPC分类号： C25D5/02
摘要： PURPOSE:To prevent other site from being contaminated with working liquid and to accurately work only a micro fabrication part, by locally feeding the working liquid to the part and applying laser beams on the part while sealing this working liquid with other fluid. CONSTITUTION:A feed part 14 of working liquid is filled by feeding the working liquid through an introduction pipe 10 thereof provided to a locally-working cell and continuously brought into contact with a micro fabrication part. The working liquid is rounded to a suction part 15 thereof from the lower part of a first cone 1 and sucked through a suction pipe 11 of working liquid. On the other hand, fluid such as air is allowed to flow through an introduction pipe 12 of liquid for sealing, and a feed part 16 thereof is filled and thereby the flow of working liquid through the lower part of a second cone 2 is sealed. This fluid for sealing is rounded through the lower part of a third cone 3 and sucked through a suction pipe 13 of fluid for sealing. In this state, laser beams are vertically applied toward the fine part to be worked from the upper part of the locally-working cell and passed through a cover plate 5 and the working liquid and converged on the micro fabrication part and working such as plating or etching is performed.

34. 发明专利

JP2001067615A THIN FILM MAGNETIC HEAD AND MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JP2001067615A
公开(公告)日：2001-03-16
申请号：JP24475699
申请日：1999-08-31
申请人： HITACHI LTD
发明人： KUDO KAZUE , SANO MASAAKI , NARUMI SHUNICHI , FUYAMA MORIAKI , OIKAWA GEN
IPC分类号： G11B5/31 , H01F10/32 , H01F41/24
摘要： PROBLEM TO BE SOLVED: To obtain a thin film magnetic head having a magnetic thin film material which corresponds to high density recording in a high frequency region, has high saturation magnetic flux density and further has high specific resistance. SOLUTION: A multilayer film, in which a magnetic layer of high saturation magnetic flux density at a side being in contact with a magnetic gap and a magnetic layer of high electric resistance at a side remote from the magnetic gap are successively laminated from a plating bath having metallic ions of Co, Ni, Fe and metallic ions of Cr, Mo, W, P or the like which can be additive elements to a film by changing current density, is formed. The thin film magnetic head using the multiplayer film for a magnetic core can emit enough magnetic flux for recording on a high coercive force medium and has small current loss even under high frequency, thus recording magnetic field intensity is not reduced.

35. 发明专利

JPH0621234A THIN FILM MULTILAYER INTERCONNECTION AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0621234A
公开(公告)日：1994-01-28
申请号：JP20020292
申请日：1992-07-06
申请人： HITACHI LTD
发明人： FUKADA SHINICHI , SUWA MOTOHIRO , KUDO KAZUE , MINEMURA TETSUO
IPC分类号： H01L23/522 , H01L21/768 , H01L21/90
摘要： PURPOSE:To provide thin film multilayer interconnections having an interconnection structure for obtaining reliability of a connecting part of through hole interconnection to a lower interconnection layer and simultaneously effective to prevent peeling of an interconnection from an insulating layer at a periphery of a through hole and a method for forming the same. CONSTITUTION:Multilayer interconnections formed on a substrate and having a lower interconnection layer 11, an interlayer insulating layer 53, an upper interconnection layer 51 and a through hole interconnection 10 are formed by sequentially forming the layers 11, 10 and then sequentially forming a mask layer for the through hole interconnection and a lower interconnection pattern layer of different materials by photolithography technique. Further, after a lower interconnection pattern is transferred to the through hole interconnection layer by etching technique, only the lower interconnection pattern layer is removed, the layer 11 is formed by etching with the transferred lower interconnection pattern as a mask and the interconnection 10 is formed by etching with a mask layer for the through hole interconnection as a mask, and formed in a structure in which a connecting surface of different metals is isolated from a bottom of the through hole and having a reverse tapered through hole interconnection.

36. 发明专利

JPH05144811A THIN FILM SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05144811A
公开(公告)日：1993-06-11
申请号：JP30800691
申请日：1991-11-22
申请人： HITACHI LTD
发明人： KUDO KAZUE , FUKADA SHINICHI , SUWA MOTOHIRO
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE:To solve the problem of film exfoliation of wiring due to film stress and the wire disconnection and the like due to stress migration by a method wherein an insulating film is formed without oxidizing the wiring in a semiconductor device having the wiring consisting of Cu or the alloy mainly composed of Cu. CONSTITUTION:A wiring layer 1, consisting of Cu or an alloy mainly composed of Cu, is formed on the thermally oxidized SiO2, film 5 formed on the surface of an Si substrate 4, then an insulating film, consisting of a non-oxidized layer 2, and an oxide film 3, which is thicker than the insulating film, are formed successively from the side of the wiring layer 1.

37. 发明专利

JPH0567685A SEMICONDUCTOR DEVICE WIRING 失效
公开(公告)号：JPH0567685A
公开(公告)日：1993-03-19
申请号：JP22689691
申请日：1991-09-06
申请人： HITACHI LTD
发明人： FUKADA SHINICHI , SUWA MOTOHIRO , KUDO KAZUE
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PURPOSE:To protect a Cu wiring layer against etching damage when a through- hole is provided to an interlayer insulating film by a method wherein the through-hole is not provided onto the Cu wiring layer, and the Cu wiring layer and an upper wiring layer are connected to each other through a wiring layer located under the Cu wiring layer. CONSTITUTION:An Al-Si-Cu film 3 is formed on an Si substrate 1 where a thermally oxidized SiO2 film 2 is formed, and the film 3 is patterned into a wiring. Then, a PSG film 4 is formed on the substrate 1, and a through-hole is provided at a required position. Furthermore, a TiN film 5 and a Cu film 6 are successively formed. Next, the Cu wiring layer 6 and the TiN layer 5 are patterned for the formation of a first Cu wiring layer. Then, a PSG film 7 is formed on the substrate 1, and a through-hole is provided at a required position. A TiN film 8 and a Cu film 9 are successively formed thereon, and the Cu wiring layer 9 is patterned to serve as a second wiring layer. As mentioned above, a through-hole is not provided above a Cu wiring, so that the Cu wiring is protected against damage at through-hole etching.

38. 发明专利

JPH04242960A WIRING OF INTEGRATED CIRCUIT 失效
公开(公告)号：JPH04242960A
公开(公告)日：1992-08-31
申请号：JP43091
申请日：1991-01-08
申请人： HITACHI LTD
发明人： DONARUDO GAADONAA , ONUKI HITOSHI , KUDO KAZUE
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE:To provide a reliable low-resistance wiring suitable for electronic devices using ULSIs and VLSIs like computers. CONSTITUTION:A wiring structure for an integrated circuit includes a low- resistance wiring with upper and lower barrier layers of molybdenum, and a side wall of SiN. Preferably, the material under the low-resistance wiring is different from the material of the side wall. This provides a reliable low- resistance wiring.

39. 发明专利

JPH0230155A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0230155A
公开(公告)日：1990-01-31
申请号：JP17901988
申请日：1988-07-20
申请人： HITACHI LTD
发明人： SUZUKI HITOSHI , KOIZUMI MASAHIRO , ONUKI HITOSHI , KUDO KAZUE
IPC分类号： H01L21/60 , C23C14/24
摘要： PURPOSE:To increase the number of pins of a semiconductor device, and obtain highly reliable connection parts, by a method wherein, when a semiconductor chip is bonded to a lead frame, the electrode of the chip and the tip of the lead frame come into contact with each other, and the contact part is connected by a ball of metal wire. CONSTITUTION:In the title semiconductor device, a semiconductor chip 1 is mounted on a lead frame 3 for semiconductor, and the semiconductor chip 1 and a plurality of inner leads are subjected to wire bonding. When the semiconductor chip 1 is bonded to a lead frame 3, the electrode end of the semiconductor chip 1 and the tip part of the lead frame 3 are made to come into contact with each other, and the contact part is simultaneously connected only by a ball part 4 of metal wire. For example, the semiconductor chip 1 is mounted on the lead frame 3 on which an insulating film 5 is formed; the electrode 2 of the semiconductor chip 1 and the lead frame 3 are connected by the ball 4 of metal wire; the whole part is covered with resin 6.

40. 发明专利

JPH11175929A MAGNETIC HEAD 失效
公开(公告)号：JPH11175929A
公开(公告)日：1999-07-02
申请号：JP34467097
申请日：1997-12-15
申请人： HITACHI LTD
发明人： KUDO KAZUE , KOMURO MATAHIRO , YOSHIDA NOBUO
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To obtain the highly reliable narrow track narrow gap reproducing head by making a top section gap film on an SV film prior to form a lift-off pattern and etching the SV film using the top section gap film as a mask employing a dry etching method in order to determine the width of the film. SOLUTION: Prior to conduct an etching of an SV film 1, an undercut is formed on a resist 14, which is located on a gap film 7 formed on the film 1, employing the lift-off pattern of an oxidized material 13. Then, the etching of the film 1 is conducted, magnetic domain controlling films 3, electrode films 4 and thick film gap films (breakdown protective films) 9 are successively formed in that order and the SV film width, the intervals of the magnetic domain controlling films and the electrode films are determined by the width of the film 7. The film 7 is formed by the insulating material which is made by mixing more than one kind of materials selected from the group of AlN, that has a high thermal conductivity, BeO, SiO, Si3 N4 and graphite. Thus, the precision of the track width is increased, the temperature rise caused by a current flow is reduced and the reliability is improved.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式