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31. 发明授权

US06818140B2 Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程
公开(公告)号：US06818140B2
公开(公告)日：2004-11-16
申请号：US10002397
申请日：2001-10-31
申请人： Jian Ding
发明人： Jian Ding
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.
摘要翻译：一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料包括氟清除剂前体材料。优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

32. 发明授权

US06183655B2 Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon 失效
标题翻译：使用氟丙烯和氢氟烃选择性地蚀刻氧化物的可调谐方法
公开(公告)号：US06183655B2
公开(公告)日：2001-02-06
申请号：US09049862
申请日：1998-03-27
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： C03C2568
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料的高选择性并且不产生蚀刻停止的自对准接触蚀刻或其它高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烯（C 3 F 6）是主要的蚀刻气体，并且至少部分地由于其聚合物形成能力而添加另一种氢氟烃，例如CH 2 F 2或C 3 H 2 F 6，这增加了蚀刻氧化物对氮化物的选择性。工艺气体还包括大量惰性气体如氩气。工艺气体混合物可以在有效蚀刻气体和聚合物成型剂之间以比例平衡，以优于其它材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

33. 发明授权

US6126836A Centrifugal flotation cell with rotating feed 失效
标题翻译：具有旋转进料的离心浮选槽
公开(公告)号：US6126836A
公开(公告)日：2000-10-03
申请号：US290371
申请日：1999-04-12
申请人： Jian Ding , Wan-Tai Yen , Alan R. Pindred
发明人： Jian Ding , Wan-Tai Yen , Alan R. Pindred
IPC分类号： B01D21/00 , B03D1/14 , B04B11/06 , B01D21/26
CPC分类号： B04B11/06 , B03D1/1418 , B03D1/1462 , B03D1/247 , B03D1/1412 , B03D2203/02
摘要： A superb centrifugal flotation cell with a rotating feed, is provided for use in an effective separation process to rapidly recover greater quantities of valuable fine particles. In the process, a slurry of fine particles is injected with air bubbles and moved downwardly through a stationary pipe and a rotating feed line comprising a centrifugal rotating downfeeder. The slurry is centrifugally discharged from the rotating downfeeder into the flotation chamber where the slurry is separated into a waste stream of non-floating gangue material and a particulate-enriched froth comprising air bubbles carrying a substantial amount of the valuable fine particles for further processing.
摘要翻译：提供具有旋转进料的超级离心浮选槽，用于有效的分离过程，以快速回收更多量的有价值的微粒。在此过程中，细小颗粒的浆料被注入气泡并向下移动通过固定管和包括离心旋转的下进料器的旋转进料管。将浆料从旋转的下进料器离心排放到浮选室中，其中浆料被分离成非浮动脉石材料的废物流和含有大量有用的细颗粒的气泡的颗粒富集泡沫用于进一步处理。

34. 发明授权

US5560780A Protective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming same 失效
标题翻译：用于集成电路处理装置的晶片支架上的电介质材料的保护涂层及其形成方法
公开(公告)号：US5560780A
公开(公告)日：1996-10-01
申请号：US420620
申请日：1995-04-12
申请人： Robert Wu , Jian Ding
发明人： Robert Wu , Jian Ding
IPC分类号： C23C4/10 , H01L21/302 , H01L21/3065 , H01L21/683 , C23C16/00 , B25B11/00 , H01H3/00 , H01G3/00
CPC分类号： H01L21/6831
摘要： Improvements in a wafer support apparatus used for electrostatic clamping of a wafer to the wafer support, and a method of making same, are disclosed wherein a dielectric material, formed on the surface of a wafer support facing the wafer to facilitate the electrostatic clamping, has a protective coating formed over the dielectric material to provide protection to the dielectric material against chemical attack from chemicals used during the processing of the semiconductor wafer. In a preferred embodiment, the protective coating comprises an aluminum compound, such as an oxide of aluminum or aluminum nitride, having a thickness ranging from about 1 micron to about 30 microns, but not exceeding about 50% of the thickness of the dielectric material so as to not interfere with the electrostatic charge used for clamping the wafer to the wafer support.
摘要翻译：公开了将用于将晶片静电夹持到晶片支架的晶片支撑装置的改进及其制造方法，其中形成在面向晶片的晶片支架的表面上以便于静电夹持的电介质材料具有形成在电介质材料上的保护涂层，以提供对电介质材料的保护，防止在半导体晶片的加工过程中所使用的化学品的化学侵蚀。在优选的实施方案中，保护性涂层包括铝化合物，例如铝或氮化铝的氧化物，其厚度范围为介电材料的厚度的约1微米至约30微米，但不超过约50％以免干扰用于将晶片夹持在晶片支架上的静电电荷。

35. 发明授权

US5539609A Electrostatic chuck usable in high density plasma 失效
公开(公告)号：US5539609A
公开(公告)日：1996-07-23
申请号：US137279
申请日：1993-10-14
申请人： Kenneth S. Collins , John R. Trow , Joshua C.-W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
发明人： Kenneth S. Collins , John R. Trow , Joshua C.-W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

36. 发明授权

US5491603A Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer 失效
标题翻译：确定脱扣电压的方法，其消除静电卡盘和晶片之间的剩余静电力
公开(公告)号：US5491603A
公开(公告)日：1996-02-13
申请号：US235012
申请日：1994-04-28
申请人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
发明人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
IPC分类号： B23Q3/15 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： The invention is embodied in a method of determining an optimum de-chucking voltage for nullifying residual electrostatic forces on a wafer in an electrostatic chuck for removal of the wafer from the chuck, including holding the wafer on the electrostatic chuck by applying an electrostatic potential to the chuck, introducing a gas between the wafer and the chuck, reducing the electrostatic potential of the chuck while observing a rate of leakage of the gas from between the wafer and the chuck, and recording as the optimum dechucking voltage the value of the electrostatic potential obtaining when the rate of leakage exceeds a predetermined threshold.
摘要翻译：本发明体现于一种确定最佳去夹紧电压的方法，用于使静电卡盘中的晶片上的残留静电力无效，从卡盘移除晶片，包括通过施加静电电位将晶片保持在静电卡盘上卡盘，在晶片和卡盘之间引入气体，同时观察卡盘的气体泄漏速率，同时减小卡盘的静电电位，并记录最佳的脱扣电压为静电电位值当泄漏速率超过预定阈值时获得。

37. 发明授权

US10729743B2 Composition comprising an algal proteoglycan extract and use thereof 有权
公开(公告)号：US10729743B2
公开(公告)日：2020-08-04
申请号：US16071020
申请日：2017-01-20
申请人： Qing Qi , Jian Ding
发明人： Qing Qi , Jian Ding
IPC分类号： A61K36/02 , A61K38/16 , A61P35/00 , A61K9/00 , A61K31/282 , A61K31/513 , A61K31/675 , A61K31/704 , A61K31/7048 , A61K35/748 , A61K45/06
摘要： Use of an algal proteoglycan extract and a composition comprising the same in the manufacture of a medicament for treating or preventing tumor, pain, inflammation or diseases mediated by inflammatory factors.

38. 发明申请

US20130324542A1 [1,2,4]TRIAZOLO[4,3-B][1,2,4]TRIAZINE COMPOUNDS, PREPARATION METHOD AND USE THEREOF 审中-公开
标题翻译： [1,2,4]三唑[4,3-B] [1,2,4]三嗪化合物，其制备方法及其用途
公开(公告)号：US20130324542A1
公开(公告)日：2013-12-05
申请号：US13992048
申请日：2011-12-08
申请人： Wenhu Duan , Meiyu Geng , Fang Chen , Jing Ai , Yi Chen , Zhengsheng Zhan , Yongcong Lv , Ying Wang , Jian Ding
发明人： Wenhu Duan , Meiyu Geng , Fang Chen , Jing Ai , Yi Chen , Zhengsheng Zhan , Yongcong Lv , Ying Wang , Jian Ding
IPC分类号： C07D487/04
CPC分类号： C07D487/04
摘要： The present invention relates to a structurally novel [1,2,4]triazolo[4,3-b][1,2,4]triazine compounds represented by formula (I) or formula (II), pharmaceutically acceptable salts thereof, prodrugs thereof, hydrates or solvates thereof, and also relates to a preparation method of the compounds, a pharmaceutical composition including a therapeutically effective amount of the compounds, as well as the use thereof as protein tyrosine kinase inhibitors, particularly as c-Met inhibitors, in the preparation of medicaments for the prevention and/or treatment of diseases associated with c-Met abnormality.
摘要翻译：本发明涉及由式（I）或式（II）表示的结构上新的[1,2,4]三唑并[4,3-b] [1,2,4]三嗪化合物，其药学上可接受的盐，前体药物其还涉及本发明化合物的制备方法，包含治疗有效量的化合物的药物组合物，以及其作为蛋白酪氨酸激酶抑制剂，特别是作为c-Met抑制剂的用途，制备用于预防和/或治疗与c-Met异常有关的疾病的药物。

39. 发明申请

US20130219496A1 SECURITY CONFIGURATION VERFICIATION DEVICE AND METHOD AND NETWORK SYSTEM EMPLOYING THE SAME 有权
标题翻译：安全配置验证设备及其使用的方法和网络系统
公开(公告)号：US20130219496A1
公开(公告)日：2013-08-22
申请号：US13882579
申请日：2011-11-18
申请人： Baichuan Nie , Jianpeng Sun , Jian Ding , Dong Xu , Zhen Zhou
发明人： Baichuan Nie , Jianpeng Sun , Jian Ding , Dong Xu , Zhen Zhou
IPC分类号： H04L29/06
CPC分类号： H04L63/1408 , H04L63/1433
摘要： The invention discloses a security configuration verification device for performing a security configuration verification on a network device, which comprises: one or more preconfigured scanning policies; a scanning policy generator, which selects a scanning policy from the one or more preconfigured scanning policies to generate a new scanning policy corresponding to the network device; and a scanner, which performs the security scanning on the network device with the generated new scanning policy and thereby performs the security configuration verification. The invention also discloses a corresponding security configuration verification method and a network system employing the verification device.
摘要翻译：本发明公开了一种用于在网络设备上执行安全配置验证的安全配置验证设备，包括：一个或多个预配置的扫描策略; 扫描策略生成器，其从所述一个或多个预配置的扫描策略中选择扫描策略，以生成与所述网络设备相对应的新的扫描策略; 以及扫描器，其利用所生成的新扫描策略在网络设备上执行安全扫描，从而执行安全配置验证。本发明还公开了一种对应的安全配置验证方法和采用验证设备的网络系统。

40. 外观设计

USD666161S1 Massage controller 有权
标题翻译：按摩控制器
公开(公告)号：USD666161S1
公开(公告)日：2012-08-28
申请号：US29374956
申请日：2011-10-31
申请人： Megan Zhu , Jian Ding , Yubo Ding
设计人： Megan Zhu , Jian Ding , Yubo Ding

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