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1. 发明授权

US5539609A Electrostatic chuck usable in high density plasma 失效
公开(公告)号：US5539609A
公开(公告)日：1996-07-23
申请号：US137279
申请日：1993-10-14
申请人： Kenneth S. Collins , John R. Trow , Joshua C.-W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
发明人： Kenneth S. Collins , John R. Trow , Joshua C.-W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

2. 发明授权

US5350479A Electrostatic chuck for high power plasma processing 失效
标题翻译：静电吸盘用于大功率等离子体处理
公开(公告)号：US5350479A
公开(公告)日：1994-09-27
申请号：US984797
申请日：1992-12-02
申请人： Kenneth S. Collins , John R. Trow , Joshua C. W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa
发明人： Kenneth S. Collins , John R. Trow , Joshua C. W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa
IPC分类号： H01L21/683 , H01L21/68
CPC分类号： H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck for holding an article to be processed in a plasma reaction chamber and comprising a metal pedestal coated with a layer of dielectric material in which is formed a cooling gas distribution system for passing and distributing a cooling gas between the upper surface of the layer and the article when supported on the pedestal. The gas distribution system comprises a plurality of intersecting grooves formed entirely in the upper surface of the layer with small gas distribution holes through intersections of the grooves over upper ends of cooling gas receiving holes formed in an underside of the pedestal.
摘要翻译：一种用于在等离子体反应室中保持待处理物品的静电卡盘，包括涂覆有介电材料层的金属基座，其中形成有用于在层的上表面之间传递和分布冷却气体的冷却气体分配系统和支撑在基座上的文章。气体分配系统包括多个完全在层的上表面上形成的相交槽，该多个相交槽通过形成在基座的下侧的冷却气体接收孔的上端上的沟槽的交叉处形成小的气体分配孔。

3. 发明授权

US5583737A Electrostatic chuck usable in high density plasma 失效
标题翻译：静电吸盘可用于高密度等离子体
公开(公告)号：US5583737A
公开(公告)日：1996-12-10
申请号：US452351
申请日：1995-05-26
申请人： Kenneth S. Collins , John R. Trow , Joshua Chiu-Wing Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
发明人： Kenneth S. Collins , John R. Trow , Joshua Chiu-Wing Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.
摘要翻译：一种用于将晶片保持在等离子体处理室中的静电卡盘，所述卡盘包括具有顶表面的基座，用于承载冷却气体的内部歧管以及从所述内部歧管向所述顶部表面引导的第一多个孔; 以及在基座的顶表面上的介电层。电介质层具有顶侧和第二多个孔，每个孔与基座中的第一多个孔的不同孔中的一个对准。第一和第二孔形成从内部歧管延伸到电介质层的顶侧的多个通道，并且冷却气体通过该通道供应到晶片的背面。与其对准的第一孔和第二孔中的每一个形成多个通道中的不同的一个。当晶片通过静电力固定在静电卡盘上时，通道集中在电介质层的靠近冷却气体泄漏较高区域的区域中。

4. 发明授权

US06518195B1 Plasma reactor using inductive RF coupling, and processes 失效
标题翻译：使用感应式RF耦合的等离子体反应器和工艺
公开(公告)号：US06518195B1
公开(公告)日：2003-02-11
申请号：US09504312
申请日：2000-02-15
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H01L213065
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到10晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，以及蚀刻工艺沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

5. 发明授权

US6068784A Process used in an RF coupled plasma reactor 失效
标题翻译：用于RF耦合等离子体反应器的工艺
公开(公告)号：US6068784A
公开(公告)日：2000-05-30
申请号：US41118
申请日：1993-04-01
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
IPC分类号： C23C16/507 , H01L21/311 , B44C1/22 , B28B1/02
CPC分类号： H01J37/32458 , C23C16/507 , H01J37/321 , H01J37/32165 , H01J37/32522 , H01L21/31116 , H01F2029/143
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

6. 发明授权

US06251792B1 Plasma etch processes 失效
标题翻译：等离子体蚀刻工艺
公开(公告)号：US06251792B1
公开(公告)日：2001-06-26
申请号：US08948560
申请日：1997-10-10
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

7. 发明授权

US5556501A Silicon scavenger in an inductively coupled RF plasma reactor 失效
标题翻译：电感耦合RF等离子体反应器中的硅清除剂
公开(公告)号：US5556501A
公开(公告)日：1996-09-17
申请号：US41796
申请日：1993-04-01
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Y. Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence C. Lei , Masato M. Toshima , Gerald Z. Yin
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Y. Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence C. Lei , Masato M. Toshima , Gerald Z. Yin
IPC分类号： C23C16/509 , H01J37/32 , H01L21/311 , H05H1/46 , C23F1/02
CPC分类号： H01J37/32871 , C23C16/509 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H05H1/46 , H01F2029/143
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

8. 发明授权

US06545420B1 Plasma reactor using inductive RF coupling, and processes 失效
标题翻译：使用感应式RF耦合的等离子体反应器和工艺
公开(公告)号：US06545420B1
公开(公告)日：2003-04-08
申请号：US08468573
申请日：1995-06-06
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
IPC分类号： H01J724
CPC分类号： H01J37/32871 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

9. 发明授权

US06488807B1 Magnetic confinement in a plasma reactor having an RF bias electrode 失效
标题翻译：具有RF偏置电极的等离子体反应器中的磁约束
公开(公告)号：US06488807B1
公开(公告)日：2002-12-03
申请号：US09563825
申请日：2000-05-03
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H05H100
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.
摘要翻译：本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供等离子体约束的静磁场与所述壁结构相邻。本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体围绕所述壁结构保持静止磁场。

10. 发明授权

US5187454A Electronically tuned matching network using predictor-corrector control system 失效
标题翻译：使用预测器校正器控制系统的电子调谐匹配网络
公开(公告)号：US5187454A
公开(公告)日：1993-02-16
申请号：US825658
申请日：1992-01-23
申请人： Kenneth S. Collins , John R. Trow , Craig A. Roderick , Jay D. Pinson, II , Douglas A. Buchberger, II
发明人： Kenneth S. Collins , John R. Trow , Craig A. Roderick , Jay D. Pinson, II , Douglas A. Buchberger, II
IPC分类号： H02J3/00 , H01L21/302 , H03H7/40 , H03H11/30 , H05H1/46
CPC分类号： H03H11/30 , H01F2029/143
摘要： A method, and corresponding apparatus, for matching a generator impedance with an unknown and possibly changing load impedance, to maximize power transferred to the load. The apparatus includes an impedance matching network, and a network model, to estimate the load impedance from known present network values and a measurement of network input impedance, and to estimate optimum network values from the input impedance and the estimated load impedance. A controller computes new network values based on the present and optimum values, and outputs the new values to the network. The process is repeated using the new network values to estimate the load impedance and generate a new set of optimum values. The controller uses a control equation with parameters selected to ensure rapid convergence on the maximum-power condition, without overshoot or instability. Preferably, current and voltage measurements are made in the network to enable correction of the network values based on these measurements on the actual network. Although the invention may be used with any type of variable-impedance network hardware, preferably current-controlled inductances are used as the variable network impedances.
摘要翻译：一种用于将发电机阻抗与未知且可能变化的负载阻抗进行匹配的方法和相应装置，以最大化传递到负载的功率。该装置包括阻抗匹配网络和网络模型，以从已知的现有网络值估计负载阻抗和网络输入阻抗的测量，并根据输入阻抗和估计的负载阻抗来估计最佳网络值。控制器根据当前和最佳值计算新的网络值，并将新值输出到网络。使用新的网络值重复该过程以估计负载阻抗并产生一组新的最优值。控制器使用具有选定参数的控制方程，以确保最大功率条件下的快速收敛，无过冲或不稳定。优选地，在网络中进行电流和电压测量以使得能够基于在实际网络上的这些测量来校正网络值。虽然本发明可以与任何类型的可变阻抗网络硬件一起使用，但优选地使用电流控制的电感作为可变网络阻抗。

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