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1. 发明授权

US5491603A Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer 失效
标题翻译：确定脱扣电压的方法，其消除静电卡盘和晶片之间的剩余静电力
公开(公告)号：US5491603A
公开(公告)日：1996-02-13
申请号：US235012
申请日：1994-04-28
申请人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
发明人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
IPC分类号： B23Q3/15 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： The invention is embodied in a method of determining an optimum de-chucking voltage for nullifying residual electrostatic forces on a wafer in an electrostatic chuck for removal of the wafer from the chuck, including holding the wafer on the electrostatic chuck by applying an electrostatic potential to the chuck, introducing a gas between the wafer and the chuck, reducing the electrostatic potential of the chuck while observing a rate of leakage of the gas from between the wafer and the chuck, and recording as the optimum dechucking voltage the value of the electrostatic potential obtaining when the rate of leakage exceeds a predetermined threshold.
摘要翻译：本发明体现于一种确定最佳去夹紧电压的方法，用于使静电卡盘中的晶片上的残留静电力无效，从卡盘移除晶片，包括通过施加静电电位将晶片保持在静电卡盘上卡盘，在晶片和卡盘之间引入气体，同时观察卡盘的气体泄漏速率，同时减小卡盘的静电电位，并记录最佳的脱扣电压为静电电位值当泄漏速率超过预定阈值时获得。

2. 发明授权

US5745331A Electrostatic chuck with conformal insulator film 失效
标题翻译：带保形绝缘膜的静电吸盘
公开(公告)号：US5745331A
公开(公告)日：1998-04-28
申请号：US381786
申请日：1995-01-31
申请人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
发明人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20). Preferably the chuck (20) is fabricated using a pressure forming process, and more preferably using a pressure differential process.
摘要翻译：用于保持基板（75）的静电卡盘（20）包括（i）具有在其中具有凹槽（85）的上表面（95）的基部（80），所述凹槽（85）的尺寸和分布以保持用于冷却的冷却剂衬底（75），和（ii）与基座（80）的上表面（95）上的凹槽（85）共形的基本上连续的绝缘膜（45）。基座（80）可以是导电的并且能够用作卡盘（20）的电极（50），或者电极（50）可以嵌入绝缘膜（45）中。绝缘体膜（45）具有足够高的绝缘击穿强度，当放置在卡盘（20）上并相对于电极（50）电偏置的基板（75）时，静电电荷积聚在基板（75）中所述电极（50）形成吸引并保持所述基板（75）到所述卡盘（20）的静电力。优选地，使用压力成形方法制造卡盘（20），更优选使用压差法。

3. 发明授权

US5753132A Method of making electrostatic chuck with conformal insulator film 失效
标题翻译：用保形绝缘膜制作静电卡盘的方法
公开(公告)号：US5753132A
公开(公告)日：1998-05-19
申请号：US725482
申请日：1996-10-04
申请人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
发明人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00 , B44C1/22
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00
摘要： A process for fabricating an electrostatic chuck (20) comprising the steps of (c) forming a base (80) having an upper surface with cooling grooves (85) therein, the grooves sized and distributed for holding a coolant therein for cooling the base; and (d) pressure conforming an electrical insulator layer (45) to the grooves on the base by the steps of (i) placing the base into a pressure forming apparatus (25) and applying an electrical insulator layer over the grooves in the base; and (ii) applying a sufficiently high pressure onto the insulator layer to pressure conform the insulator layer to the grooves to form a substantially continuous layer of electrical insulator conformal to the grooves on the base.
摘要翻译：一种用于制造静电卡盘（20）的方法，包括以下步骤：（c）形成具有上表面的基部（80），其中具有冷却槽（85），所述凹槽的尺寸和分布用于将冷却剂保持在其中用于冷却基座; 和（d）通过以下步骤将电绝缘体层（45）施加到基底上的凹槽上：（i）将基底放置在压力成形设备（25）中并将电绝缘体层施加在基底中的凹槽上; 和（ii）将足够高的压力施加到绝缘体层上以使绝缘体层压到沟槽上，以形成与基底上的凹槽保形的基本上连续的电绝缘层。

4. 发明授权

US4937643A Devices having tantalum silicide structures 失效
标题翻译：具有硅化钽结构的器件
公开(公告)号：US4937643A
公开(公告)日：1990-06-26
申请号：US78013
申请日：1987-07-27
申请人： Jean S. Deslauriers , Hyman J. Levinstein
发明人： Jean S. Deslauriers , Hyman J. Levinstein
IPC分类号： H01L21/28 , H01L21/3213
CPC分类号： H01L21/32137 , H01L21/28061
摘要： A method for fabricating a device which includes a tantalum silicide structure, and which is essentially free of conductive etch residues, is disclosed. The method includes the steps of depositing tantalum and silicon onto a substrate, patterning the tantalum and silicon, and then sintering the patterned tantalum and silicon to form a patterned layer of tantalum silicide.
摘要翻译：公开了一种制造包括硅化钽结构并且基本上不含导电蚀刻残留物的器件的方法。该方法包括以下步骤：将钽和硅沉积到衬底上，图案化钽和硅，然后烧结图案化的钽和硅以形成图案化的硅化钽层。

5. 发明授权

US4427516A Apparatus and method for plasma-assisted etching of wafers 失效
标题翻译：用于等离子体辅助蚀刻晶片的装置和方法
公开(公告)号：US4427516A
公开(公告)日：1984-01-24
申请号：US471901
申请日：1983-03-04
申请人： Hyman J. Levinstein , Frederick Vratny
发明人： Hyman J. Levinstein , Frederick Vratny
IPC分类号： H01J37/32 , H01J37/34 , H01L21/311 , C23C15/00
CPC分类号： H01J37/32559 , H01J37/34 , H01L21/31116 , H01J2237/20 , Y10S156/914 , Y10S156/917
摘要： In a plasma-assisted etching apparatus and method designed to pattern silicon dioxide in a plasma derived from a mixture of trifluoromethane and ammonia, surfaces in the reaction chamber are coated with a layer of silicon. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.
摘要翻译：在等离子体辅助蚀刻装置和设计用于在三氟甲烷和氨的混合物中产生的等离子体中排列二氧化硅的方法，反应室中的表面涂覆有一层硅。因此，在蚀刻过程中晶片的污染因此显着降低。在实践中，这导致每个晶片可接受的芯片的产量显着增加。

6. 发明授权

US4332839A Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效
标题翻译：制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：US4332839A
公开(公告)日：1982-06-01
申请号：US227133
申请日：1981-01-22
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01L21/28 , H01L21/768 , H01L23/532 , H01L29/49 , H01L21/283
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/76889 , H01L29/4933 , H01L2924/0002 , Y10S148/02 , Y10S148/147
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译：已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。

7. 再颁专利

USRE30244E Radial flow reactor including glow discharge limitting shield 失效
标题翻译：径流反应堆包括辉光放电限制屏蔽
公开(公告)号：USRE30244E
公开(公告)日：1980-04-01
申请号：US946843
申请日：1978-09-28
申请人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
发明人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
IPC分类号： C23C16/509
CPC分类号： C23C16/5096
摘要： An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.

8. 发明授权

US4985373A Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures 失效
标题翻译：用于半导体集成电路结构中的两层互连金属化的多重绝缘层
公开(公告)号：US4985373A
公开(公告)日：1991-01-15
申请号：US357647
申请日：1989-05-24
申请人： Hyman J. Levinstein , William D. Powell, Jr. , Ashok K. Sinha
发明人： Hyman J. Levinstein , William D. Powell, Jr. , Ashok K. Sinha
IPC分类号： H01L21/316 , H01L23/532
CPC分类号： H01L21/02129 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31625 , H01L23/5329 , H01L2924/0002
摘要： Insulation between first and second levels of aluminum metallization in semiconductor integrated circuit structures comprises a plasma planarized, deposited silicon dioxide layer and another silicon dioxide layer deposited upon said plasma planarized layer.
摘要翻译：在半导体集成电路结构中的第一和第二级铝金属化之间的绝缘包括沉积在所述等离子体平坦化层上的等离子体平坦化沉积二氧化硅层和另一二氧化硅层。

9. 再颁专利

USRE32207E Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效
标题翻译：制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：USRE32207E
公开(公告)日：1986-07-15
申请号：US429299
申请日：1982-09-30
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L29/49
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/32055 , H01L21/76889 , H01L29/4933 , H01L2924/0002
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.

10. 发明授权

US4253029A Mask structure for x-ray lithography 失效
标题翻译： X射线光刻的掩模结构
公开(公告)号：US4253029A
公开(公告)日：1981-02-24
申请号：US41730
申请日：1979-05-23
申请人： Martin P. Lepselter , Hyman J. Levinstein , Dan Maydan
发明人： Martin P. Lepselter , Hyman J. Levinstein , Dan Maydan
IPC分类号： G03F1/22 , H01L21/30 , B01J17/00 , G02B5/00 , G21F5/04
CPC分类号： G03F1/22 , Y10S430/167
摘要： A mask substrate for use in an x-ray lithographic system comprises a boron nitride member (32, FIG. 2) coated with a polyimide layer (20) whose thickness is approximately the same as that of the boron nitride member. The substrate is mechanically strong and both optically and x-ray transparent. Mask patterns formed on the substrate are characterized by low distortion and a low defect density.
摘要翻译：用于x射线光刻系统的掩模基板包括涂覆有厚度与氮化硼构件的厚度大致相同的聚酰亚胺层（20）的氮化硼构件（32，图2）。基材机械性强，光学和X射线透明。形成在基板上的掩模图案的特征在于低失真和低缺陷密度。

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