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31. 发明授权

US4884011A Light-detecting device 失效
标题翻译：光检测装置
公开(公告)号：US4884011A
公开(公告)日：1989-11-28
申请号：US143384
申请日：1988-01-13
申请人： Tatsuo Makishima , Tadaaki Hirai , Kazutaka Tsuji , Sachio Ishioka , Takashi Yamashita , Keiichi Shidara , Junichi Yamazaki , Masaaki Aiba
发明人： Tatsuo Makishima , Tadaaki Hirai , Kazutaka Tsuji , Sachio Ishioka , Takashi Yamashita , Keiichi Shidara , Junichi Yamazaki , Masaaki Aiba
IPC分类号： H01J31/38 , H01J29/45 , H01L31/0272 , H04N5/228
CPC分类号： H01L31/0272 , H01J29/456
摘要： A light-detecting device for converting a light to an electrical signal utilizes a charge multiplication function and has a stable gain.The light-detecting device comprises a photo-electric conversion unit for converting a measurement light to an electrical signal, a power supply for applying an electric field to the photo-electric conversion unit, a light source for applying an incident light to the photo-electric conversion unit, signal detection means for detecting the charge converted by the photo-electric conversion unit based on the incident light from the light source, and signal hold means for holding the output signal of the signal detection means at a predetermined level.
摘要翻译：用于将光转换为电信号的光检测装置利用电荷倍增函数并具有稳定的增益。光检测装置包括用于将测量光转换为电信号的光电转换单元，向光电转换单元施加电场的电源，用于将入射光施加到光电转换单元的光源，电转换单元，用于基于来自光源的入射光检测由光电转换单元转换的电荷的信号检测装置，以及用于将信号检测装置的输出信号保持在预定水平的信号保持装置。

32. 发明授权

US4617248A Doped photoconductive film including selenium and tellurium 失效
标题翻译：掺杂的光电导膜包括硒和碲
公开(公告)号：US4617248A
公开(公告)日：1986-10-14
申请号：US736149
申请日：1985-05-20
申请人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
发明人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01J31/26 , H01J1/78 , H01J29/45 , H01L31/0248 , H01L31/08 , G03G5/08 , G03G5/09
CPC分类号： H01J29/456
摘要： A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.
摘要翻译：公开了与光电导型的图像拾取管的靶相关的光电导膜的结构。该感光膜主要由Se形成，Te的中心部分添加Te。此外，被认为形成通过在Se中捕获电子而形成负空间电荷的Se和GaF 3等中的电子形成深阱陷阱的As被添加在与Te存在的区域相邻的区域中。此外，存在GaF 3等的区域中的膜的厚度比迄今采用的值更薄（不小于20，不大于90）。

33. 发明授权

US4564784A Reduced degradation, high resolution image pickup tube 失效
标题翻译：降低降解，高分辨率图像拾取管
公开(公告)号：US4564784A
公开(公告)日：1986-01-14
申请号：US552477
申请日：1983-11-16
申请人： Sachio Ishioka , Yoshinori Imamura , Tadaaki Hirai , Saburo Nobutoki , Akio Maruyama
发明人： Sachio Ishioka , Yoshinori Imamura , Tadaaki Hirai , Saburo Nobutoki , Akio Maruyama
IPC分类号： H01J31/28 , H01J29/08 , H01J31/38 , H01J29/06 , H01J29/56
CPC分类号： H01J31/38 , H01J29/08
摘要： An image pickup tube comprising a target composed of a light-transmissible plate, a transparent electrode provided on said light-transmissible plate and a photoconductor made of hydrogen-containing amorphous silicon provided on said transparent electrode; an electron beam generator; and a mesh electrode near the aforesaid target, at least the surface of said mesh electrode being made of at least one member selected from the group consisting of Be, B, C, Mg, Al and Si, has high resolution with greatly improved life characteristics.
摘要翻译：一种图像拾取管，包括由透光板组成的靶，设置在所述透光板上的透明电极和设置在所述透明电极上的由含氢非晶硅构成的感光体; 电子束发生器; 以及靠近上述靶的网状电极，至少所述网状电极的表面由选自Be，B，C，Mg，Al和Si的组中的至少一种构成，具有高分辨率，寿命特性极大地改善。

34. 发明授权

US4249106A Radiation sensitive screen 失效
标题翻译：辐射敏感屏
公开(公告)号：US4249106A
公开(公告)日：1981-02-03
申请号：US92021
申请日：1979-11-07
申请人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
发明人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
IPC分类号： H01J9/233 , H01J29/39 , H01J29/45
CPC分类号： H01J29/39 , H01J29/45 , H01J9/233
摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.
摘要翻译：一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

35. 发明申请

US20110163305A1 RADIATION DETECTOR 有权
标题翻译：辐射探测器
公开(公告)号：US20110163305A1
公开(公告)日：2011-07-07
申请号：US13054942
申请日：2009-07-23
申请人： Koichi Ogusu , Osamu Nakane , Yasunori Igasaki , Yoshinori Okamura , Tadaaki Hirai
发明人： Koichi Ogusu , Osamu Nakane , Yasunori Igasaki , Yoshinori Okamura , Tadaaki Hirai
IPC分类号： H01L31/0272
CPC分类号： G01T1/244 , H01L27/1462 , H01L27/14676 , H01L31/115
摘要： An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on the side on which radiation is made incident of the X-ray conversion layer 17; and a signal readout substrate 2 on which a plurality of pixel electrodes 7 for collecting charges generated by the X-ray conversion layer 17 are arrayed, and further includes: an electric field relaxation layer 13 provided between the X-ray conversion layer 17 and the signal readout substrate 2 and containing arsenic and lithium fluoride; a crystallization suppressing layer 11 provided between the electric field relaxation layer 13 and the signal readout substrate 2 and containing arsenic; and a first thermal property enhancement layer 15 provided between the electric field relaxation layer 13 and the X-ray conversion layer 17 and containing arsenic.
摘要翻译： X射线检测器1包括：由非晶硒制成并吸收入射的辐射并产生电荷的X射线转换层17; 设置在X射线转换层17入射侧的表面上的公共电极23; 以及信号读出基板2，其上排列有用于收集由X射线转换层17产生的电荷的多个像素电极7，并且还包括：电场弛豫层13，设置在X射线转换层17和信号读出基板2，并含有砷和氟化锂; 设置在电场弛豫层13和信号读出基板2之间并含有砷的结晶抑制层11; 以及设置在电场缓和层13和X射线转换层17之间并含有砷的第一热性质增强层15。

36. 发明授权

US5384597A Image pickup tube utilizing third electrode and its operating method 失效
标题翻译：使用第三电极的摄像管及其操作方法
公开(公告)号：US5384597A
公开(公告)日：1995-01-24
申请号：US701508
申请日：1991-05-16
申请人： Kenji Sameshima , Tatsuo Makishima , Tadaaki Hirai , Yukio Takasaki , Misao Kubota , Kenkichi Tanioka , Keiichi Shidara
发明人： Kenji Sameshima , Tatsuo Makishima , Tadaaki Hirai , Yukio Takasaki , Misao Kubota , Kenkichi Tanioka , Keiichi Shidara
IPC分类号： H01J29/45 , H01J31/38 , H04N3/30
CPC分类号： H01J31/38 , H01J29/45
摘要： An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.
摘要翻译：图像拾取管设置有第三电极，以控制包括目标电极和光导膜的图像拾取管目标部分中未被电子束扫描的区域的电位。还公开了一种用于操作该图像拾取管的方法。因此，可以抑制当使用具有较高目标电压（例如图像失真，阴影，瀑布现象和图像反转现象）的图像拾取管时产生的不期望的图像现象，从而实现高灵敏度图像拾取管。

37. 发明授权

US5218264A Image pick-up tube and apparatus having the same 失效
标题翻译：图像拾取管和具有该图像的装置
公开(公告)号：US5218264A
公开(公告)日：1993-06-08
申请号：US472886
申请日：1990-01-31
申请人： Tadaaki Hirai , Hirofumi Ogawa , Kenji Sameshima , Yukio Takasaki , Takaaki Unnai , Junichi Yamazaki , Misao Kubota , Kenkichi Tanioka , Eikyu Hiruma
发明人： Tadaaki Hirai , Hirofumi Ogawa , Kenji Sameshima , Yukio Takasaki , Takaaki Unnai , Junichi Yamazaki , Misao Kubota , Kenkichi Tanioka , Eikyu Hiruma
IPC分类号： H01J29/45 , H01J31/38
CPC分类号： H01J31/38 , H01J29/45
摘要： An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.

38. 发明授权

US5196702A Photo-sensor and method for operating the same 失效
标题翻译：光电传感器及其操作方法
公开(公告)号：US5196702A
公开(公告)日：1993-03-23
申请号：US824857
申请日：1991-12-11
申请人： Kazutaka Tsuji , Tadaaki Hirai , Yukio Takasaki , Haruo Itoh , Tetshuhiko Takahashi , Kenichi Okajima
发明人： Kazutaka Tsuji , Tadaaki Hirai , Yukio Takasaki , Haruo Itoh , Tetshuhiko Takahashi , Kenichi Okajima
IPC分类号： H04N5/32
CPC分类号： H04N5/32
摘要： An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed between those two photoconductors for storing and recombining carriers; and an optical source (107) for emitting a signal reading light for uninformalizing the potential in said second photoconductor (102), whereby a successive signal reading can be accomplished without any special preparations for the incidence of the signal light. The photo-sensor can be applied to a variety of imaging devices.
摘要翻译： PCT No.PCT / JP88 / 01073 Sec。 371日期1989年8月21日 102（e）日期1989年8月21日PCT提交1988年10月21日PCT公布。出版物WO89 / 04063 用于读出具有信号读取光的信号光的信息信号的光学读取型光电传感器包括插入在两个电极（104和105）之间的第一感光体（101）和第二感光体（102））; 设置在这两个光电导体之间的用于存储和重组载体的中间区域（103）以及用于发射用于对所述第二光电导体（102）中的电位进行非正规化的信号读取光的光源（107），由此可以在不对信号光的入射进行任何特别准备的情况下实现连续的信号读取。光电传感器可以应用于各种成像设备。

39. 发明授权

US5070272A Photoconductive device and method of operating same 失效
标题翻译：光电装置及其操作方法
公开(公告)号：US5070272A
公开(公告)日：1991-12-03
申请号：US547226
申请日：1990-07-03
申请人： Takeshi Kikawa , Kazutaka Tsuji , Kenji Sameshima , Tadaaki Hirai , Junichi Yamazaki , Misao Kubota , Keiichi Shidara
发明人： Takeshi Kikawa , Kazutaka Tsuji , Kenji Sameshima , Tadaaki Hirai , Junichi Yamazaki , Misao Kubota , Keiichi Shidara
IPC分类号： H01J31/38 , H01J29/45 , H01J29/86 , H01J29/88 , H01L27/146 , H01L31/024 , H01L31/0272 , H01L31/0392 , H01L31/09
CPC分类号： H01L31/0392 , H01J29/45 , H01L31/024 , H01L31/0272 , H01L31/09 , Y02E10/50
摘要： A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

40. 发明授权

US4556816A Photoelectric device 失效
标题翻译：光电器件
公开(公告)号：US4556816A
公开(公告)日：1985-12-03
申请号：US510910
申请日：1983-07-05
申请人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
发明人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H01J31/00 , H01J31/26
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233
摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
摘要翻译：公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

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