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    • 36. 发明申请
    • SPECIMEN PREPARATION DEVICE, AND CONTROL METHOD IN SPECIMEN PREPARATION DEVICE
    • 样品制备装置,以及样品制备装置中的控制方法
    • US20110309245A1
    • 2011-12-22
    • US13203807
    • 2009-10-23
    • Yuichi MadokoroTsuyoshi OnishiMegumi AizawaYukio Yoshizawa
    • Yuichi MadokoroTsuyoshi OnishiMegumi AizawaYukio Yoshizawa
    • G21K5/10G01N23/02
    • G01N1/286
    • Separation and the like of an excised specimen from a specimen are automatically performed. Marks for improving image recognition accuracy are provided in a region that becomes an excised specimen in a specimen and a region other than said region, or in a transfer means for transferring the excised specimen and a specimen holder capable of holding the excised specimen, and the relative movement of the excised specimen and the specimen, and the like are recognized with high accuracy by image recognition. In the sampling of a minute specimen using a focused ion beam, the detection of an end point of processing for separation of the excised specimen from the specimen, and the like are automatically performed. Thus, for example, unmanned specimen excision becomes possible, and preparation of a lot of specimens becomes possible.
    • 自动进行切片样品与试样的分离等。 在成为试样和除了所述区域以外的区域的切除试样的区域中,或者在用于转移切除的试样的转移装置和能够保持切除的试样的试样保持器的区域中提供用于提高图像识别精度的标记, 通过图像识别以高精度识别切除的样本和样本的相对运动等。 在使用聚焦离子束对分钟标本的取样中,自动执行用于将切出的样品与试样分离的处理终点的检测等。 因此,例如,无人标本切除成为可能,并且可以制备大量标本。
    • 38. 发明授权
    • Liquid metal ion gun
    • 液态金属离子枪
    • US07804073B2
    • 2010-09-28
    • US12076481
    • 2008-03-19
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • Hiroyasu KagaYuichi MadokoroShigeru IzawaTohru IshitaniKaoru Umemura
    • H01J49/10H01J27/02
    • H01J27/02H01J27/22H01J37/08H01J2237/0805
    • An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
    • Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素(W和Ga),如果反溅射的颗粒附着到Ga液态金属离子源,则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制(GUN)光圈来放置大约的Ga。 在束发射区域(Ga储存)中包含的部分的表面上25mg(熔点为30℃))。 当将离子发射到光束限制(GUN)孔径时,发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。