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31. 发明申请

US20100089315A1 SHUTTER DISK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 审中-公开
标题翻译：用于物理蒸气沉积室的快门盘
公开(公告)号：US20100089315A1
公开(公告)日：2010-04-15
申请号：US12563531
申请日：2009-09-21
申请人： Karl M. Brown , Jason Schaller
发明人： Karl M. Brown , Jason Schaller
IPC分类号： B05C11/00
CPC分类号： H01L21/68785 , C23C14/50 , H01J37/32477 , H01L21/67069 , H01L21/6719 , H01L21/68707
摘要： A shutter disk suitable for shield a substrate support in a physical vapor deposition chamber is provided. In one embodiment, the shutter disk includes a disk-shaped body having an outer diameter disposed between a top surface and a bottom surface. The disk-shape body includes a double step connecting the bottom surface to the outer diameter.
摘要翻译：提供了适用于在物理气相沉积室中屏蔽衬底支架的快门盘。在一个实施例中，快门盘包括具有设置在顶表面和底表面之间的外径的盘形主体。盘状体包括将底面与外径连接的双重步骤。

32. 发明授权

US07541289B2 Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture 有权
标题翻译：使用LF或HF偏置功率和电容耦合的VHF源功率去除高应力膜的方法，具有增强的残留捕获
公开(公告)号：US07541289B2
公开(公告)日：2009-06-02
申请号：US11626151
申请日：2007-01-23
申请人： Karl M. Brown , John A. Pipitone , Vineet H. Mehta
发明人： Karl M. Brown , John A. Pipitone , Vineet H. Mehta
IPC分类号： H01L21/302
CPC分类号： H01L21/02063 , H01J37/32091 , H01J37/32706 , H01J2237/20
摘要： A method of fabricating multilayer interconnect structures on a semiconductor wafer begins by roughening the interior surface of a metal lid to a surface roughness in excess of SA 2000 with a reentrant surface profile, and installing the metal lid as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.
摘要翻译：在半导体晶片上制造多层互连结构的方法首先通过将金属盖的内表面粗糙化为超过SA 2000的表面粗糙度而具有折入表面轮廓，并且将金属盖安装为等离子体清洁反应器室的天花板具有面向天花板内表面的晶片基座。

33. 发明申请

US20080014747A1 PROCESS FOR REMOVING HIGH STRESSED FILM USING LF OR HF BIAS POWER AND CAPACITIVELY COUPLED VHF SOURCE POWER WITH ENHANCED RESIDUE CAPTURE 有权
标题翻译：使用低频或高频偏置功率移除高压薄膜的过程和具有增强残留捕获能力的电容耦合甚高频源
公开(公告)号：US20080014747A1
公开(公告)日：2008-01-17
申请号：US11626151
申请日：2007-01-23
申请人： KARL M. BROWN , JOHN A. PIPITONE , VINEET H. MEHTA
发明人： KARL M. BROWN , JOHN A. PIPITONE , VINEET H. MEHTA
IPC分类号： H01L21/302
CPC分类号： H01L21/02063 , H01J37/32091 , H01J37/32706 , H01J2237/20
摘要： A method of fabricating multilayer interconnect structures on a semiconductor wafer begins by roughening the interior surface of a metal lid to a surface roughness in excess of SA 2000 with a reentrant surface profile, and installing the metal lid as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling. Conductive vias are formed in a dielectric layer of the semiconductor wafer, which are then covered with an overlying dielectric layer. High aspect ratio openings are etched through the overlying dielectric layer to the conductive via to expose a face of the conductive via. This step is followed by a preclean step for removing residue from the exposed face of each conductive via while capturing at least a portion of the residue on the roughened interior surface of the lid. This preclean step consists of: (1) placing the wafer on the wafer pedestal of the plasma clean reactor chamber and introducing an inert gas into the preclean reactor chamber; (2) coupling VHF plasma source power of 60 MHz or greater to the wafer pedestal with sufficient power to establish an etch rate on the order of 200-500 Å/min; and (3) coupling LF or HF plasma bias power of 13.56 MHz or less with sufficient power to realize the etch rate at the bottom surfaces of the high aspect ratio openings, and removing the wafer from the plasma clean reactor chamber.
摘要翻译：在半导体晶片上制造多层互连结构的方法首先通过将金属盖的内表面粗糙化为超过SA 2000的表面粗糙度而具有折入表面轮廓，并且将金属盖安装为等离子体清洁反应器室的顶部具有面向天花板内表面的晶片基座。导电通孔形成在半导体晶片的电介质层中，然后用覆盖的介电层覆盖。通过上覆电介质层将高纵横比开口蚀刻到导电通孔，以露出导电通孔的表面。该步骤之后是用于从每个导电通孔的暴露面去除残留物的预清洗步骤，同时捕获盖的粗糙化内表面上的至少一部分残余物。该预清洗步骤包括：（1）将晶片放置在等离子体清洁反应器室的晶片基座上，并将惰性气体引入预清洗反应器室中; （2）以足够的功率将60MHz或更高的VHF等离子体源功率耦合到晶片基座，以建立约200-500埃/分钟的蚀刻速率; 和（3）以13.56MHz或更小的LF或HF等离子体偏置功率与足够的功率耦合以实现高纵横比开口的底表面处的蚀刻速率，以及从等离子体清洁反应器室中移除晶片。

34. 发明授权

US07268076B2 Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
标题翻译：用于通过工件施加的源极和偏置功率频率的金属等离子体气相沉积和再溅射的装置和方法
公开(公告)号：US07268076B2
公开(公告)日：2007-09-11
申请号：US11052012
申请日：2005-02-03
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , C23C14/345 , C23C14/354 , H01J37/32706 , H01J37/3408 , H01L21/76843 , H01L21/76844 , H01L21/76865
摘要： Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
摘要翻译：在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。将工艺气体引入所述真空室。目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

35. 发明授权

US5059938A Wire wound ignition cable and method for making same 失效
标题翻译：绕线点火电缆及其制作方法
公开(公告)号：US5059938A
公开(公告)日：1991-10-22
申请号：US509145
申请日：1990-04-16
申请人： Karl M. Brown
发明人： Karl M. Brown
IPC分类号： F02P15/00 , H01B7/00 , H01B7/17 , H01B13/00
CPC分类号： H01B7/0063
摘要： An ignition cable having a resistance wire helically wound around a strength member to form a conductive core. A very thin adhesive layer is applied over the conductive core and is overlaid with a semi-conductive layer of a cross-linked thermosetting material. The cross-linked thermosetting material is extruded over the adhesive layer to form a smooth surface. A layer of insulating material and a protective jacket are applied over the insulating layer. A braid may be added intermediate the insulating layer and the jacket to increase the mechanical strength of the ignition cable.
摘要翻译：一种点火电缆，其具有围绕强度构件螺旋缠绕以形成导电芯的电阻丝。将非常薄的粘合剂层施加在导电芯上，并且覆盖有交联的热固性材料的半导体层。将交联的热固性材料挤出粘合剂层以形成光滑的表面。在绝缘层上施加绝缘材料层和保护套。可以在绝缘层和护套之间添加编织物以增加点火电缆的机械强度。

36. 发明授权

US08562798B2 Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron 有权
标题翻译：具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管
公开(公告)号：US08562798B2
公开(公告)日：2013-10-22
申请号：US11222231
申请日：2005-09-07
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , H01B11/02 , H01B11/06 , H02G3/04 , H05K1/09
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
摘要翻译：物理气相沉积反应器包括金属溅射靶，耦合到金属溅射靶的直流溅射功率源和面向金属溅射靶的晶片支撑基座。可移动磁体阵列与金属溅射靶的与晶片支撑基座相对的一侧相邻。固体金属RF馈送杆接合金属溅射靶并且在与晶片支撑基座相对的一侧上从靶的表面延伸。 VHF阻抗匹配电路耦合到与金属溅射靶相对的RF馈电杆的端部以及耦合到所述VHF阻抗匹配电路的VHF RF发电发生器。优选地，反应器还包括中心轴，可动磁体阵列围绕该中心轴可旋转，中心轴具有轴向延伸的中空通道，RF馈送杆延伸穿过通道。

37. 发明申请

US20110045170A1 IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY THERMAL SPRAYING 有权
标题翻译：电喷活性锂离子电池原位沉积
公开(公告)号：US20110045170A1
公开(公告)日：2011-02-24
申请号：US12862265
申请日：2010-08-24
申请人： Quanyuan Shang , Lu Yang , Karl M. Brown , Donald J.K. Olgado , Victor Pebenito , Hooman Bolandi , Tetsuya Ishikawa , Robert Z. Bachrach , Liang-Yuh Chen
发明人： Quanyuan Shang , Lu Yang , Karl M. Brown , Donald J.K. Olgado , Victor Pebenito , Hooman Bolandi , Tetsuya Ishikawa , Robert Z. Bachrach , Liang-Yuh Chen
IPC分类号： B05D5/12 , B05C11/06
CPC分类号： H01M4/0419 , H01M4/1391
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译：提供一种用于形成薄膜电池的电化学层的方法和装置。将包含分散在载运介质中的电化学活性前体颗粒的前体混合物提供到处理室，并使用也提供给室的可燃气体混合物进行热处理。通过热能将前体转化成纳米晶体，并将纳米晶体沉积在基底上。当第二前体沉积在表面上以增强粘附性和导电性时，可与纳米晶体共混。

38. 发明申请

US20090229969A1 Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
标题翻译：在晶片表面具有各向同性离子速度分布的物理气相沉积方法
公开(公告)号：US20090229969A1
公开(公告)日：2009-09-17
申请号：US12077067
申请日：2008-03-14
申请人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
发明人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C14/3471 , C23C14/50 , C23C14/542 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/3266 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3444
摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
摘要翻译：在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

39. 发明申请

US20090197419A1 PROCESS FOR REMOVING HIGH STRESSED FILM USING LF OR HF BIAS POWER AND CAPACITIVELY COUPLED VHF SOURCE POWER WITH ENHANCED RESIDUE CAPTURE 失效
标题翻译：使用低频或高频偏置功率移除高压薄膜的过程和具有增强残留捕获能力的电容耦合甚高频源
公开(公告)号：US20090197419A1
公开(公告)日：2009-08-06
申请号：US12421402
申请日：2009-04-09
申请人： KARL M. BROWN , John A. Pipitone , Vineet H. Mehta
发明人： KARL M. BROWN , John A. Pipitone , Vineet H. Mehta
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01J37/32091 , H01J37/32706 , H01J2237/20
摘要： A method of fabricating multilayer interconnect structures on a semiconductor wafer uses an interior surface of a metal lid that has been roughed to a surface roughness in excess of RA 2000 with a reentrant surface profile. The metal lid is installed as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.
摘要翻译：在半导体晶片上制造多层互连结构的方法使用已经被粗糙化的表面粗糙度超过RA 2000的金属盖的内表面，具有折入表面轮廓。金属盖安装为具有面向天花板内表面的晶片基座的等离子体清洁反应室的天花板。

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