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1. 发明授权

US07244344B2 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
标题翻译：具有通过工件施加VHF源功率的物理气相沉积等离子体反应器
公开(公告)号：US07244344B2
公开(公告)日：2007-07-17
申请号：US11140514
申请日：2005-05-25
申请人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei W. Wang , Semyon Sherstinsky
发明人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei W. Wang , Semyon Sherstinsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

2. 发明授权

US07820020B2 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
标题翻译：用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率
公开(公告)号：US07820020B2
公开(公告)日：2010-10-26
申请号：US11140513
申请日：2005-05-25
申请人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl M. Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向晶片支撑座的表面。

3. 发明申请

US20060169578A1 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
标题翻译：用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率
公开(公告)号：US20060169578A1
公开(公告)日：2006-08-03
申请号：US11140513
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向晶片支撑座的表面。

4. 发明申请

US20060172536A1 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece 审中-公开
标题翻译：用于通过工件施加RF源功率的等离子体增强物理气相沉积的装置
公开(公告)号：US20060172536A1
公开(公告)日：2006-08-03
申请号：US11140544
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： H01L21/44
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, and maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma. The frequency of the RF source power is sufficiently high to limit ion energy near the surface of the wafer so that the principal portion of the power provides plasma ion generation. The method further includes maintaining the RF source power at a sufficiently high level to deposit a conformal layer of copper on vertical and horizontal surfaces of the workpiece.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，将载气引入真空室，将目标溅射等离子体保持在目标处，以产生包含从目标流向晶片支撑基座的铜原子和铜离子中的至少一种的气流，用于气相沉积，并保持通过将等离子体RF源功率电容耦合到晶片溅射等离子体，在晶片支撑基座附近的晶片溅射等离子体。 RF源功率的频率足够高以限制晶片表面附近的离子能量，使得功率的主要部分提供等离子体离子产生。该方法还包括将RF源功率保持在足够高的水平以将铜的共形层沉积在工件的垂直和水平表面上。

5. 发明申请

US20060169576A1 Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
标题翻译：具有通过工件施加VHF源功率的物理气相沉积等离子体反应器
公开(公告)号：US20060169576A1
公开(公告)日：2006-08-03
申请号：US11140514
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei Wang , Semyon Sherstinsky
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann , Wei Wang , Semyon Sherstinsky
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

6. 发明授权

US09096927B2 Cooling ring for physical vapor deposition chamber target 有权
标题翻译：物理气相沉积室目标的冷却环
公开(公告)号：US09096927B2
公开(公告)日：2015-08-04
申请号：US13584972
申请日：2012-08-14
申请人： Brian West , Goichi Yoshidome , Ralf Hofmann
发明人： Brian West , Goichi Yoshidome , Ralf Hofmann
IPC分类号： C23C14/35 , C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/3414 , H01J37/3497
摘要： Apparatus and method for physical vapor deposition are provided. In some embodiments, a cooling ring to cool a target in a physical vapor deposition chamber may include an annular body having a central opening; an inlet port coupled to the body; an outlet port coupled to the body; a coolant channel disposed in the body and having a first end coupled to the inlet port and a second end coupled to the outlet port; and a cap coupled to the body and substantially spanning the central opening, wherein the cap includes a center hole.
摘要翻译：提供了用于物理气相沉积的装置和方法。在一些实施例中，用于冷却物理气相沉积室中的靶的冷却环可以包括具有中心开口的环形体; 连接到所述主体的入口端口; 连接到所述主体的出口; 冷却剂通道，其设置在所述主体中并且具有联接到所述入口的第一端和联接到所述出口的第二端; 以及联接到所述主体并且基本跨越所述中心开口的盖，其中所述盖包括中心孔。

7. 发明授权

US08782206B2 Load-balanced allocation of medical task flows to servers of a server farm 有权
标题翻译：医疗任务流的负载均衡分配到服务器场的服务器
公开(公告)号：US08782206B2
公开(公告)日：2014-07-15
申请号：US12461848
申请日：2009-08-26
申请人： Ralf Hofmann , Andreas Schülke , Andreas Siwick , Hans-Martin Von Stockhausen
发明人： Ralf Hofmann , Andreas Schülke , Andreas Siwick , Hans-Martin Von Stockhausen
IPC分类号： G06F15/173
CPC分类号： G06F9/505 , G06F19/00 , G16H40/20
摘要： A method, a system and a computer program are disclosed for the load-balanced allocation of computer-aided medical task flows on at least one application server of a server farm. In at least one embodiment, request conditions and load information are configured in a configuration phase. The request conditions are then recorded in a load balancing phase. In addition the load information is recorded via load calculation agents. A load balancing service can then calculate a target application server, which according to the load information determined meets all recorded request conditions.
摘要翻译：公开了用于在服务器场的至少一个应用服务器上的计算机辅助医疗任务流的负载平衡分配的方法，系统和计算机程序。在至少一个实施例中，在配置阶段中配置请求条件和负载信息。然后将请求条件记录在负载平衡阶段。此外，通过负载计算代理记录负载信息。然后，负载平衡服务可以计算目标应用服务器，根据所确定的负载信息满足所有记录的请求条件。

8. 发明授权

US08719778B2 Interconnection interface for flexible online/offline deployment of an n-layered software application 有权
标题翻译：互联接口，用于灵活的在线/离线部署n层软件应用程序
公开(公告)号：US08719778B2
公开(公告)日：2014-05-06
申请号：US11878093
申请日：2007-07-20
申请人： Karlheinz Dorn , Ralf Hofmann
发明人： Karlheinz Dorn , Ralf Hofmann
IPC分类号： G06F9/44 , G06F9/445
CPC分类号： G06F8/00
摘要： A method is disclosed for producing a software application with at least two layers, including a processing layer and a process layer, wherein each layer is encapsulated and hence platform-independent in its execution, the encapsulated layers communicating via an application programming interface. A system is also disclosed for producing an application including a flexible interconnection interface between encapsulated layers. By virtue of the implementation of an additional configurable interconnection interface in the application programming interface between two encapsulated application layers, the architecture layering can be retained regardless of the respective deployment, and only the communication profiles of the interconnection interfaces need be adapted to the deployment. This has the advantage, in at least one embodiment, that it is not necessary to produce and update different source code masters for the different deployments, and instead only one single architecture layering of the application need be created and maintained.
摘要翻译：公开了一种用于生产具有至少两层的软件应用的方法，包括处理层和处理层，其中每个层被封装，因此在其执行中因此与平台无关，所述封装层经由应用编程接口进行通信。还公开了一种用于生产包括在封装层之间的柔性互连接口的应用的系统。通过在两个封装的应用层之间的应用程序编程接口中实现附加的可配置互连接口，可以保留架构分层，而不管相应的部署如何，并且只有互连接口的通信配置需要适应于部署。这在至少一个实施例中具有以下优点：不需要为不同部署生成和更新不同的源代码主机，而是需要创建和维护应用程序的一个单一架构分层。

9. 发明申请

US20130192524A1 Continuous Substrate Processing System 有权
标题翻译：连续基板加工系统
公开(公告)号：US20130192524A1
公开(公告)日：2013-08-01
申请号：US13755891
申请日：2013-01-31
申请人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
发明人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
IPC分类号： H01L21/673
CPC分类号： H01L21/673 , C23C16/45546 , C23C16/4558 , C23C16/4584 , C23C16/54 , H01L21/67346 , H01L21/677
摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.
摘要翻译：提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。处理室可以是多室衬底处理系统的一部分。

10. 发明申请

US20120152203A1 Method and control unit for operating an injector of an internal combustion engine 有权
标题翻译：用于操作内燃机的喷射器的方法和控制单元
公开(公告)号：US20120152203A1
公开(公告)日：2012-06-21
申请号：US13323145
申请日：2011-12-12
申请人： Guido Porten , Markus Amler , Matthias Walz , Alexandra Woerz , Ralf Hofmann , Arthur Pichlkostner
发明人： Guido Porten , Markus Amler , Matthias Walz , Alexandra Woerz , Ralf Hofmann , Arthur Pichlkostner
IPC分类号： F02B3/00
CPC分类号： F02D41/2096 , F02D41/221 , F02D41/28 , F02D41/402 , F02D2041/2051 , Y02T10/44
摘要： In a method for operating an injector of an internal combustion engine of a motor vehicle, in which an actuator for driving a component of the injector is provided, the actuator is controlled in such a way that at least two partial injections are brought about within a working cycle of the internal combustion engine. For each partial injection, a starting point in time of the partial injection is ascertained.
摘要翻译：在一种用于操作机动车辆的内燃机的喷射器的方法中，其中设置有用于驱动喷射器的部件的致动器，致动器被控制为使得至少两次部分喷射在内燃机的工作循环。对于每个局部注射，确定部分注射的起始点。

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