专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US06743667B2 Method of manufacturing an active matrix type device 失效
标题翻译：制造有源矩阵型器件的方法
公开(公告)号：US06743667B2
公开(公告)日：2004-06-01
申请号：US09773620
申请日：2001-02-02
申请人： Masamitsu Hiroki , Yasuhiko Takemura , Mutsuo Yamamoto , Naoaki Yamaguchi , Satoshi Teramoto
发明人： Masamitsu Hiroki , Yasuhiko Takemura , Mutsuo Yamamoto , Naoaki Yamaguchi , Satoshi Teramoto
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L27/1277 , H01L29/78621
摘要： An amorphous semiconductor film comprising silicon is provided with a metal element which is capable of promoting a crystallization of silicon. Then, the semiconductor film is crystallized by hating at a relatively low temperature. After introducing impurity ions into source and drain regions of the semiconductor film, the source and drain regions are recrystallized by heating. During the recrystallization, the channel region having crystallinity functions as crystalline nuclei. Accordingly, it is possible to avoid defects occurring in the boundary regions between the channel region and source/drain regions.
摘要翻译：包含硅的非晶半导体膜具有能够促进硅结晶的金属元素。然后，半导体膜在相对较低的温度下憎恨而结晶。在将杂质离子引入半导体膜的源极和漏极区域之后，通过加热使源极和漏极区域再结晶。在重结晶期间，具有结晶性的沟道区域作为结晶核发挥作用。因此，可以避免在沟道区域和源极/漏极区域之间的边界区域中发生的缺陷。

22. 发明授权

US5945711A Semiconductor device and a manufacturing method for the same 失效
公开(公告)号：US5945711A
公开(公告)日：1999-08-31
申请号：US966975
申请日：1997-11-10
申请人： Yasuhiko Takemura , Satoshi Teramoto
发明人： Yasuhiko Takemura , Satoshi Teramoto
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/13 , H01L29/786 , H01L29/76 , H01L29/94
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

23. 发明授权

US5719065A Method for manufacturing semiconductor device with removable spacers 失效
标题翻译：制造具有可移除间隔物的半导体器件的方法
公开(公告)号：US5719065A
公开(公告)日：1998-02-17
申请号：US313910
申请日：1994-09-28
申请人： Yasuhiko Takemura , Satoshi Teramoto
发明人： Yasuhiko Takemura , Satoshi Teramoto
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/13 , H01L29/786
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译：本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。因此，可以提高N沟道型TFT对热电子的可靠性。

24. 发明授权

US07863619B2 Semiconductor device and a method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07863619B2
公开(公告)日：2011-01-04
申请号：US12427139
申请日：2009-04-21
申请人： Yasuhiko Takemura , Satoshi Teramoto
发明人： Yasuhiko Takemura , Satoshi Teramoto
IPC分类号： H01L29/10
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译：本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。因此，可以提高N沟道型TFT对热电子的可靠性。

25. 发明授权

US07301209B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07301209B2
公开(公告)日：2007-11-27
申请号：US11634904
申请日：2006-12-07
申请人： Yasuhiko Takemura , Satoshi Teramoto
发明人： Yasuhiko Takemura , Satoshi Teramoto
IPC分类号： H01L29/76
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译：本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。因此，可以提高N沟道型TFT对热电子的可靠性。

26. 发明授权

US08053778B2 Semiconductor device and a method for manufacturing the same 失效
公开(公告)号：US08053778B2
公开(公告)日：2011-11-08
申请号：US12981914
申请日：2010-12-30
申请人： Yasuhiko Takemura , Satoshi Teramoto
发明人： Yasuhiko Takemura , Satoshi Teramoto
IPC分类号： H01L29/10
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

27. 发明申请

US20090200611A1 SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090200611A1
公开(公告)日：2009-08-13
申请号：US12427139
申请日：2009-04-21
申请人： Yasuhiko Takemura , Satoshi Teramoto
发明人： Yasuhiko Takemura , Satoshi Teramoto
IPC分类号： H01L29/786
CPC分类号： H01L27/1248 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
摘要翻译：本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。因此，可以提高N沟道型TFT对热电子的可靠性。

28. 发明授权

US06635589B2 Methods of heat treatment and heat treatment apparatus for silicon oxide films 失效
标题翻译：氧化硅膜的热处理和热处理装置的方法
公开(公告)号：US06635589B2
公开(公告)日：2003-10-21
申请号：US09286999
申请日：1999-04-07
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
IPC分类号： H01L2142
CPC分类号： H01L21/28158 , C23C14/58 , C23C16/56 , H01L29/66757 , Y10S438/909 , Y10S438/91 , Y10S438/958
摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C. in a hydrogen nitride atmosphere (N2O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.
摘要翻译：作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法对形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在由硅膜的活性层上形成的氧化硅膜在300-700°的温度下进行热处理而形成在氮氧化物气氛（N 2 O气氛）中在N2O气氛（或氮化氢气氛）中照射紫外线，然后在300-700℃下进行热处理，并减少氢和碳的量在氧化硅膜中，特别是将氮引入与硅膜的边界。

29. 发明授权

US5970384A Methods of heat treating silicon oxide films by irradiating ultra-violet light 失效
标题翻译：用紫外光照射氧化硅膜的方法
公开(公告)号：US5970384A
公开(公告)日：1999-10-19
申请号：US510288
申请日：1995-08-02
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
IPC分类号： H01L21/316 , C23C14/58 , C23C16/56 , H01L21/28 , H01L21/336 , H01L21/8234
CPC分类号： H01L21/28158 , C23C14/58 , C23C16/56 , H01L29/66757 , Y10S438/909 , Y10S438/91 , Y10S438/958
摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.2 O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.
摘要翻译：作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法将形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在包含硅膜的有源层上形成的氧化硅膜在300-700℃下进行热处理而形成在氮氧化物气氛（或氮气氛围）中，用紫外线照射，然后在氮气气氛（N2O氛围）中在300-700℃下进行热处理，并减少氢和碳的量在氧化硅膜中，特别是将氮引入与硅膜的边界。

30. 发明授权

US07838968B2 Semiconductor device and method of fabricating same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07838968B2
公开(公告)日：2010-11-23
申请号：US11293111
申请日：2005-12-05
申请人： Hongyong Zhang , Satoshi Teramoto
发明人： Hongyong Zhang , Satoshi Teramoto
IPC分类号： H01L23/58 , H01L27/01 , H01L29/04
CPC分类号： H01L21/31111 , G02F1/136227 , H01L21/02532 , H01L21/02675 , H01L21/2026 , H01L21/76801 , H01L21/76802 , H01L27/12 , H01L27/1248
摘要： There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.
摘要翻译：公开了具有提高的可靠性的TFT。形成TFT的层间电介质膜由氮化硅膜构成。其它层间绝缘膜也由氮化硅制成。形成这些层间电介质膜的氮化硅膜内的应力设定在-5×109〜5×10 9 dyn / cm 2之间。这可以抑制层间绝缘膜的剥离和形成接触孔的困难。此外，可以抑制从活性层释放氢。以这种方式，可以获得高度可靠的TFT。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式