专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090155323A1 SKIN COSMETIC COMPOSITION 失效
标题翻译：皮肤化妆品组合物
公开(公告)号：US20090155323A1
公开(公告)日：2009-06-18
申请号：US12390390
申请日：2009-02-20
申请人： Shigefumi SAKAI , Atsuyuki Kiba , Chitoshi Shigeno , Hideaki Kubo
发明人： Shigefumi SAKAI , Atsuyuki Kiba , Chitoshi Shigeno , Hideaki Kubo
IPC分类号： A61K8/18 , A61P17/00
CPC分类号： A61K8/042 , A61K8/0204 , A61K8/0283 , A61K8/65 , A61K8/68 , A61K8/73 , A61Q19/00 , B01J13/0056 , B01J13/0065
摘要： A skin cosmetic composition comprising: a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein dispersed in an aqueous medium; a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein; and a process for preparing a hydrogel particle comprising the steps of discharging an oil component-emulsified or dispersed solution prepared by dissolving a non-crosslinked hydrogel in an aqueous solution, with vibration from an orifice to form droplets; and cooling the droplets to solidify.
摘要翻译：一种皮肤化妆品组合物，其包含：含有分散在水性介质中的含有油成分的非交联水凝胶的水凝胶颗粒; 包含其中含有油成分的非交联水凝胶的水凝胶颗粒; 以及制备水凝胶颗粒的方法，包括以下步骤：将通过将非交联水凝胶溶解在水溶液中而制备的油性成分 - 乳化或分散溶液，从孔中振动以形成液滴; 并冷却液滴以固化。

2. 发明授权

US07319581B2 Capacitive pressure sensor 失效
标题翻译：电容式压力传感器
公开(公告)号：US07319581B2
公开(公告)日：2008-01-15
申请号：US11292445
申请日：2005-12-02
申请人： Toshihide Suto , Shigefumi Sakai , Sasahiro Takahashi
发明人： Toshihide Suto , Shigefumi Sakai , Sasahiro Takahashi
IPC分类号： H01G7/00
CPC分类号： G01L9/0073
摘要： A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.
摘要翻译：电容式压力传感器包括：具有隔膜的导电硅衬底; 具有固定电极的绝缘基板，所述绝缘基板与所述导电硅基板重叠以与所述绝缘基板接合; 以及形成在隔膜和固定电极之间的密封室。将导电硅构件埋设在绝缘基板的一部分中，导电硅构件的一部分朝向密封室的绝缘基板的表面露出，形成固定电极，另一部分导电硅构件暴露于绝缘基板的不面向密封室的另一表面，以形成固定电极的引线电极。

3. 发明申请

US20050156241A1 Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US20050156241A1
公开(公告)日：2005-07-21
申请号：US11028908
申请日：2005-01-03
申请人： Shigefumi Sakai , Munemitsu Abe
发明人： Shigefumi Sakai , Munemitsu Abe
IPC分类号： G01L9/00 , H01L29/84 , H01L27/01
CPC分类号： G01L9/0042 , G01L9/0073
摘要： A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI substrate and surrounded by a groove extending to an insulating layer of the SOI substrate, a through hole formed in the glass substrate, and an output electrode that is made of a conductive material, is disposed inside the through hole, and is electrically connected to an electrode formed on the glass substrate via the silicon island.
摘要翻译：压力传感器包括绝缘体上硅（SOI）衬底，通过阳极接合结合到SOI衬底的玻璃衬底，形成在SOI衬底的硅层的一部分上并由延伸到 SOI衬底的绝缘层，形成在玻璃衬底中的通孔和由导电材料制成的输出电极设置在通孔的内部，并且通过硅电连接到形成在玻璃衬底上的电极岛。

4. 发明授权

US06635589B2 Methods of heat treatment and heat treatment apparatus for silicon oxide films 失效
标题翻译：氧化硅膜的热处理和热处理装置的方法
公开(公告)号：US06635589B2
公开(公告)日：2003-10-21
申请号：US09286999
申请日：1999-04-07
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
IPC分类号： H01L2142
CPC分类号： H01L21/28158 , C23C14/58 , C23C16/56 , H01L29/66757 , Y10S438/909 , Y10S438/91 , Y10S438/958
摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C. in a hydrogen nitride atmosphere (N2O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.
摘要翻译：作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法对形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在由硅膜的活性层上形成的氧化硅膜在300-700°的温度下进行热处理而形成在氮氧化物气氛（N 2 O气氛）中在N2O气氛（或氮化氢气氛）中照射紫外线，然后在300-700℃下进行热处理，并减少氢和碳的量在氧化硅膜中，特别是将氮引入与硅膜的边界。

5. 发明授权

US5970384A Methods of heat treating silicon oxide films by irradiating ultra-violet light 失效
标题翻译：用紫外光照射氧化硅膜的方法
公开(公告)号：US5970384A
公开(公告)日：1999-10-19
申请号：US510288
申请日：1995-08-02
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
IPC分类号： H01L21/316 , C23C14/58 , C23C16/56 , H01L21/28 , H01L21/336 , H01L21/8234
CPC分类号： H01L21/28158 , C23C14/58 , C23C16/56 , H01L29/66757 , Y10S438/909 , Y10S438/91 , Y10S438/958
摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.2 O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.
摘要翻译：作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法将形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在包含硅膜的有源层上形成的氧化硅膜在300-700℃下进行热处理而形成在氮氧化物气氛（或氮气氛围）中，用紫外线照射，然后在氮气气氛（N2O氛围）中在300-700℃下进行热处理，并减少氢和碳的量在氧化硅膜中，特别是将氮引入与硅膜的边界。

6. 发明授权

US07135749B2 Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US07135749B2
公开(公告)日：2006-11-14
申请号：US11028908
申请日：2005-01-03
申请人： Shigefumi Sakai , Munemitsu Abe
发明人： Shigefumi Sakai , Munemitsu Abe
IPC分类号： H01L29/84
CPC分类号： G01L9/0042 , G01L9/0073
摘要： A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI substrate and surrounded by a groove extending to an insulating layer of the SOI substrate, a through hole formed in the glass substrate, and an output electrode that is made of a conductive material, is disposed inside the through hole, and is electrically connected to an electrode formed on the glass substrate via the silicon island.
摘要翻译：压力传感器包括绝缘体上硅（SOI）衬底，通过阳极接合结合到SOI衬底的玻璃衬底，形成在SOI衬底的硅层的一部分上并由延伸到 SOI衬底的绝缘层，形成在玻璃衬底中的通孔和由导电材料制成的输出电极设置在通孔的内部，并且通过硅电连接到形成在玻璃衬底上的电极岛。

7. 发明授权

US08017046B2 Skin cosmetic composition 失效
标题翻译：皮肤化妆品组成
公开(公告)号：US08017046B2
公开(公告)日：2011-09-13
申请号：US12390390
申请日：2009-02-20
申请人： Shigefumi Sakai , Atsuyuki Kiba , Chitoshi Shigeno , Hideaki Kubo
发明人： Shigefumi Sakai , Atsuyuki Kiba , Chitoshi Shigeno , Hideaki Kubo
IPC分类号： B01J13/02 , B01J13/04 , A61K8/11
CPC分类号： A61K8/042 , A61K8/0204 , A61K8/0283 , A61K8/65 , A61K8/68 , A61K8/73 , A61Q19/00 , B01J13/0056 , B01J13/0065
摘要： A skin cosmetic composition comprising: a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein dispersed in an aqueous medium; a hydrogel particle comprising a non-crosslinked hydrogel containing an oil component therein; and a process for preparing a hydrogel particle comprising the steps of discharging an oil component-emulsified or dispersed solution prepared by dissolving a non-crosslinked hydrogel in an aqueous solution, with vibration from an orifice to form droplets; and cooling the droplets to solidify.
摘要翻译：一种皮肤化妆品组合物，其包含：含有分散在水性介质中的含有油成分的非交联水凝胶的水凝胶颗粒; 包含其中含有油成分的非交联水凝胶的水凝胶颗粒; 以及制备水凝胶颗粒的方法，包括以下步骤：将通过将非交联水凝胶溶解在水溶液中而制备的油性成分 - 乳化或分散溶液，从孔中振动以形成液滴; 并冷却液滴以固化。

8. 发明申请

US20060133006A1 Capacitive pressure sensor 失效
标题翻译：电容式压力传感器
公开(公告)号：US20060133006A1
公开(公告)日：2006-06-22
申请号：US11292445
申请日：2005-12-02
申请人： Toshihide Suto , Shigefumi Sakai , Sasahiro Takahashi
发明人： Toshihide Suto , Shigefumi Sakai , Sasahiro Takahashi
IPC分类号： H01G7/00
CPC分类号： G01L9/0073
摘要： A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.
摘要翻译：电容式压力传感器包括：具有隔膜的导电硅衬底; 具有固定电极的绝缘基板，所述绝缘基板与所述导电硅基板重叠以与所述绝缘基板接合; 以及形成在隔膜和固定电极之间的密封室。将导电硅构件埋设在绝缘基板的一部分中，导电硅构件的一部分朝向密封室的绝缘基板的表面露出，形成固定电极，另一部分导电硅构件暴露于绝缘基板的不面向密封室的另一表面，以形成固定电极的引线电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式