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21. 发明授权

US5009020A Light-passing decorative object 失效
标题翻译：透光装饰物
公开(公告)号：US5009020A
公开(公告)日：1991-04-23
申请号：US273607
申请日：1988-11-21
申请人： Toshiharu Watanabe
发明人： Toshiharu Watanabe
IPC分类号： B44C5/08 , B60Q1/26 , B60Q1/30 , B60R13/00 , F21S8/10 , F21V8/00 , G09F21/04
CPC分类号： G02B6/0065 , B60Q1/2696 , G09F21/04 , Y10T428/24521 , Y10T428/24868
摘要： A light-passing decorative object made of light-passing synthetic resin is characterized in that a film piece on which letters, patterns or the like are displayed in such a manner as to be seen therethrough is intimately bonded to a notch-cut back side of a light-passing decorative member. The decorative member is provided a back side thereof with a face brightening device. The face brightening device has optical fibers arranged in parallel relation. The optical fibers being provided with a notched portion so as to be brightened. One ends of the optical fibers are bundled to form a bundle portion and attached to a coupler for coupling to a light source.
摘要翻译：由透光合成树脂制成的透光装饰物体的特征在于，以通过其透视的方式显示字母，图案等的薄膜片紧密地结合到透光装饰构件。装饰构件的背面设置有面部增白装置。面部增白装置具有并排布置的光纤。光纤设置有切口部分以使其变亮。光纤的一端被捆扎以形成束部分并且附接到耦合器以耦合到光源。

22. 发明授权

US08360752B2 Electric compressor 有权
标题翻译：电动压缩机
公开(公告)号：US08360752B2
公开(公告)日：2013-01-29
申请号：US12442062
申请日：2008-02-15
申请人： Toshiharu Watanabe , Yutaka Satou , Hirotada Shimaguchi , Masaki Watanabe
发明人： Toshiharu Watanabe , Yutaka Satou , Hirotada Shimaguchi , Masaki Watanabe
IPC分类号： F04B17/00 , F04B35/04
CPC分类号： F04C23/008 , F01C21/10 , F04B39/121 , F04C18/3441 , F04C29/0085 , F04C2240/803 , F04C2240/808
摘要： The present invention relates to an electric compressor integrally including a compression mechanism and an electric motor, and an object thereof is to prevent the housing from being elongated in the axial direction and improve the sealability and the mountability of the compression mechanism. According to the present invention, a hermetic terminal (45) electrically connecting the electric motor (30) and a motor drive circuit (40) is attached within a swelled-space portion (50) swelled toward radial outside of a housing (11) so as to be continuous with a mounting bracket (17) of the housing (11). Accordingly, the distance between the compression mechanism and motor drive circuit can be shortened.
摘要翻译：电动压缩机技术领域本发明涉及一体地包括压缩机构和电动机的电动压缩机，其目的在于防止壳体在轴向上伸长并提高压缩机构的密封性和安装性。根据本发明，电连接电动机（30）和电动机驱动电路（40）的气密端子（45）被安装在朝向壳体（11）的径向外侧膨胀的膨胀空间部分（50）内，因此以与壳体（11）的安装支架（17）连续。因此，能够缩短压缩机构与马达驱动电路之间的距离。

23. 发明申请

US20080246072A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080246072A1
公开(公告)日：2008-10-09
申请号：US11773721
申请日：2007-07-05
申请人： Masaki Kondo , Takashi Izumida , Nobutoshi Aoki , Toshiharu Watanabe
发明人： Masaki Kondo , Takashi Izumida , Nobutoshi Aoki , Toshiharu Watanabe
IPC分类号： H01L29/788
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： In a nonvolatile semiconductor memory device including a memory cell column formed by connecting in series a plurality of memory cells each having a structure in which a charge-storage layer and a control gate are stacked via an insulating layer on a semiconductor substrate, a first selection transistor formed on the semiconductor substrate and connected between one end of the memory cell column and a common source line, and a second selection transistor formed on the semiconductor substrate and connected between the other end of the memory cell column and a bit line, a recessed portion is formed on a surface of the semiconductor substrate between the first selection transistor and a memory cell adjacent to the first selection transistor, and an edge at a side of the first selection transistor in the recessed portion reaches an end portion at a side of the memory cell in a gate of the first selection transistor.
摘要翻译：在包括存储单元列的非易失性半导体存储器件中，该存储单元列是通过串联连接多个存储单元而形成的，每个存储单元具有通过绝缘层在半导体衬底上层叠电荷存储层和控制栅极的结构，第一选择形成在半导体衬底上并连接在存储单元列的一端和公共源极线之间的晶体管，以及形成在半导体衬底上并连接在存储单元列的另一端和位线之间的第二选择晶体管，部分形成在第一选择晶体管和与第一选择晶体管相邻的存储单元之间的半导体衬底的表面上，并且凹陷部分中的第一选择晶体管的一侧的边缘到达第二选择晶体管的一侧的端部第一选择晶体管的栅极中的存储单元。

24. 发明申请

US20080217674A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATION OF THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080217674A1
公开(公告)日：2008-09-11
申请号：US12038383
申请日：2008-02-27
申请人： Toshiharu Watanabe
发明人： Toshiharu Watanabe
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/115 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： A semiconductor memory device includes a first memory cell transistor. The first memory cell transistor includes a tunnel insulation film provided on a semiconductor substrate, a floating electrode provided on the tunnel insulation film, an inter-gate insulation film provided on the floating electrode, and a control electrode provided on the inter-gate insulation film. The floating electrode includes a first floating electrode provided on the tunnel insulation film and a second floating electrode provided on one end portion of the first floating electrode, the floating electrode having an L-shaped cross section in a wiring direction of the control electrode.
摘要翻译：半导体存储器件包括第一存储单元晶体管。第一存储单元晶体管包括设置在半导体衬底上的隧道绝缘膜，设置在隧道绝缘膜上的浮置电极，设置在浮置电极上的栅极间绝缘膜，以及设置在栅极间绝缘膜上的控制电极。浮置电极包括设置在隧道绝缘膜上的第一浮动电极和设置在第一浮动电极的一个端部上的第二浮置电极，浮置电极在控制电极的布线方向上具有L形截面。

25. 发明申请

US20070151784A1 Radiator core support 有权
标题翻译：散热器核心支持
公开(公告)号：US20070151784A1
公开(公告)日：2007-07-05
申请号：US11637244
申请日：2006-12-12
申请人： Toshiharu Watanabe , Hideki Kobayashi , Shinji Araki , Osamu Ito , Eiichi Mori
发明人： Toshiharu Watanabe , Hideki Kobayashi , Shinji Araki , Osamu Ito , Eiichi Mori
IPC分类号： B60K11/04
CPC分类号： B62D25/084
摘要： A radiator core support includes a radiator core support main body that is made of plastic material, a right fixing member and a left fixing member that are made of metal, and a first metal frame. The right fixing member and the left fixing member are fixed on a right side member and a left side member of a motor vehicle body, respectively. The first metal frame extends in a lateral direction of the motor vehicle body so as to connect the right fixing member and the left fixing member with each other and support the radiator core support main body.
摘要翻译：散热器芯支撑件包括由塑料材料制成的散热器芯支撑主体，由金属制成的右固定构件和左固定构件，以及第一金属框架。右固定构件和左固定构件分别固定在机动车身的右侧构件和左侧构件上。第一金属框架沿着机动车体的横向方向延伸，以将右固定构件和左固定构件彼此连接并支撑散热器芯支撑主体。

26. 发明申请

US20060254748A1 Cooling cycle 审中-公开
公开(公告)号：US20060254748A1
公开(公告)日：2006-11-16
申请号：US11452222
申请日：2006-06-14
申请人： Toshiharu Watanabe , Masahiro Iguchi
发明人： Toshiharu Watanabe , Masahiro Iguchi
IPC分类号： B60H1/00
CPC分类号： F28F9/0234 , B60H1/00335 , B60H1/00885 , B60H2001/00928 , B60H2001/00942 , B60H2001/00949 , B60H2001/00957 , F25B9/008 , F25B40/00 , F25B2309/061 , F28D1/0408 , F28D1/05366 , F28D7/0025 , F28D2021/0073 , F28D2021/0094
摘要： In a cooling cycle including a compressor, a gas cooler, a throttling device, and an evaporator, a heat exchanger is arranged between the compressor and the throttling device for carrying out heat exchange through a refrigerant compressed by the compressor.

27. 发明授权

US07115474B2 Nonvolatile semiconductor memory and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US07115474B2
公开(公告)日：2006-10-03
申请号：US10866137
申请日：2004-06-14
申请人： Koji Sakui , Toshiharu Watanabe
发明人： Koji Sakui , Toshiharu Watanabe
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , G11C16/0483 , H01L27/115 , H01L27/11524
摘要： A trench region 14 is formed in a memory cell P-type well 13. Two NAND-type memory cell units ND1 and ND2 are respectively formed along both side wall portions of this trench region 14. A floating gate FG and a control gate CG in these NAND-type memory cell units ND1 and ND2 are formed self-aligningly without using memory cell units ND1 and ND2 is formed via an interlayer dielectric 30. The bit line pitch of this bit line BL is set at 2 F. Hence, the size of a nonvolatile semiconductor memory can be reduced.
摘要翻译：沟槽区14形成在存储单元P型阱13中。两个NAND型存储单元ND 1和ND 2分别沿着该沟槽区域14的两个侧壁部分形成。这些NAND型存储单元单元ND 1和ND 2中的浮栅FG和控制栅极CG形成在不使用存储单元单元ND 1和ND 2的情况下，通过层间电介质30形成自对准。该位线BL的位线间距设定为2μF。因此，可以减小非易失性半导体存储器的尺寸。

28. 发明授权

US06869088B2 Steering apparatus for vehicle 失效
标题翻译：车辆转向装置
公开(公告)号：US06869088B2
公开(公告)日：2005-03-22
申请号：US10060084
申请日：2002-01-31
申请人： Kazuya Shibayama , Mitsuji Yamamura , Toshio Ohashi , Takeshi Ogasawara , Takeshi Sato , Toshiharu Watanabe , Yasuhito Okawara
发明人： Kazuya Shibayama , Mitsuji Yamamura , Toshio Ohashi , Takeshi Ogasawara , Takeshi Sato , Toshiharu Watanabe , Yasuhito Okawara
IPC分类号： B62D1/16 , B62D3/02 , B62D7/16
CPC分类号： B62D1/163
摘要： A steering apparatus for a vehicle has: a steering shaft rotatable with a steering force applied from a steering wheel; a cable unit for transmitting a rotational force with an output member and a pair of cable wires; and a speed reducing gear disposed between the steering shaft and the cable unit. The output member makes a rotation in such a manner that the pair of the cable wires are pulled relative to each other. The rotational force is transmitted from the steering shaft to a side having a tire-and-wheel.
摘要翻译：一种用于车辆的转向装置具有：转向轴，其具有从方向盘施加的转向力; 电缆单元，用于利用输出构件和一对电缆线传递旋转力; 以及设置在转向轴和电缆单元之间的减速齿轮。输出构件以使得一对电缆线相对于彼此拉动的方式进行旋转。旋转力从转向轴传递到具有轮胎和轮的一侧。

29. 发明授权

US06523360B2 Cooling cycle and control method thereof 失效
公开(公告)号：US06523360B2
公开(公告)日：2003-02-25
申请号：US09984678
申请日：2001-10-30
申请人： Toshiharu Watanabe , Torahide Takahashi , Yoshihiro Sasaki , Masahiro Iguchi , Kojiro Nakamura , Yasuhito Okawara
发明人： Toshiharu Watanabe , Torahide Takahashi , Yoshihiro Sasaki , Masahiro Iguchi , Kojiro Nakamura , Yasuhito Okawara
IPC分类号： F25B100
CPC分类号： F25B41/062 , F25B9/008 , F25B40/00 , F25B49/022 , F25B2309/061 , F25B2341/063 , F25B2500/18 , F25B2600/02 , F25B2600/17 , F25B2700/195 , F25B2700/2102
摘要： A cooling cycle with a high-pressure side operating in a supercritical area of refrigerant includes a temperature sensor for sensing a temperature of cooled refrigerant between a gas cooler and an internal heat exchanger, a pressure sensor for sensing a pressure of cooled refrigerant between the two, and a controller for controlling at least one of a compressor and a throttling device in accordance with the sensed temperature and the sensed pressure.

30. 发明授权

US06228717B1 Method of manufacturing semiconductor devices with alleviated electric field concentration at gate edge portions 失效
标题翻译：制造半导体器件的方法，该栅极边缘部分具有减小的电场浓度
公开(公告)号：US06228717B1
公开(公告)日：2001-05-08
申请号：US09196002
申请日：1998-11-19
申请人： Hiroaki Hazama , Kazumi Amemiya , Toshiharu Watanabe
发明人： Hiroaki Hazama , Kazumi Amemiya , Toshiharu Watanabe
IPC分类号： H01K218247
CPC分类号： H01L29/42368 , H01L21/28247 , H01L21/28273 , H01L29/42324 , H01L29/511
摘要： With the present invention, in a memory cell of a stacked-gate NOR flash EEPROM, for example, a SiON film is selectively formed on the sidewalls of a floating gate electrode and the top surface and sidewalls of a control gate electrode. Thereafter, annealing is done in an oxidative atmosphere, thereby carrying out a post-oxidation process. This allows an oxide film to grow gradually at the gate edge portions contacting a tunnel oxide film or interlayer insulating film of the floating gate electrode and control gate electrode. The formation of the SiON film on at least on the sidewalls of the floating gate electrode prevents oxidation at those portions. On the other hand, the gate edge portions of the floating gate electrode eventually become round. By improving the shape of the gate edge portions of the floating gate electrode in this way, an electric field is prevented from concentrating at the gate edge portions of the floating gate electrode.
摘要翻译：通过本发明，在堆叠栅极NOR闪存EEPROM的存储单元中，例如，在浮栅电极的侧壁和控制栅电极的顶表面和侧壁上选择性地形成SiON膜。此后，在氧化气氛中进行退火，从而进行后氧化工序。这允许氧化膜在与浮栅电极和控制栅电极的隧道氧化物膜或层间绝缘膜接触的栅极边缘部分处逐渐生长。至少在浮栅电极的侧壁上形成SiON膜可防止这些部分的氧化。另一方面，浮栅电极的栅极边缘部分最终变圆。通过以这种方式改善浮栅电极的栅边缘部分的形状，防止了电场集中在浮栅电极的栅极边缘部分。

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