专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07115474B2 Nonvolatile semiconductor memory and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US07115474B2
公开(公告)日：2006-10-03
申请号：US10866137
申请日：2004-06-14
申请人： Koji Sakui , Toshiharu Watanabe
发明人： Koji Sakui , Toshiharu Watanabe
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , G11C16/0483 , H01L27/115 , H01L27/11524
摘要： A trench region 14 is formed in a memory cell P-type well 13. Two NAND-type memory cell units ND1 and ND2 are respectively formed along both side wall portions of this trench region 14. A floating gate FG and a control gate CG in these NAND-type memory cell units ND1 and ND2 are formed self-aligningly without using memory cell units ND1 and ND2 is formed via an interlayer dielectric 30. The bit line pitch of this bit line BL is set at 2 F. Hence, the size of a nonvolatile semiconductor memory can be reduced.
摘要翻译：沟槽区14形成在存储单元P型阱13中。两个NAND型存储单元ND 1和ND 2分别沿着该沟槽区域14的两个侧壁部分形成。这些NAND型存储单元单元ND 1和ND 2中的浮栅FG和控制栅极CG形成在不使用存储单元单元ND 1和ND 2的情况下，通过层间电介质30形成自对准。该位线BL的位线间距设定为2μF。因此，可以减小非易失性半导体存储器的尺寸。

2. 发明授权

US06762955B2 Nonvolatile semiconductor memory having control gate with top flat surface covering storage layers of two adjacent transistors 失效
标题翻译：具有控制栅极的非易失性半导体存储器，其顶部平坦表面覆盖两个相邻晶体管的存储层
公开(公告)号：US06762955B2
公开(公告)日：2004-07-13
申请号：US10422900
申请日：2003-04-25
申请人： Koji Sakui , Toshiharu Watanabe
发明人： Koji Sakui , Toshiharu Watanabe
IPC分类号： G11C1604
CPC分类号： H01L27/11521 , G11C16/0483 , H01L27/115 , H01L27/11524
摘要： A nonvolatile semiconductor memory includes rewritable nonvolatile memory cell transistors connected in series. The nonvolatile memory cell transistors includes at least two charge storage layers formed on a first insulating film, a control gate shared by two adjacent transistors which are two of the nonvolatile memory cell transistors and which are adjacent to each other, and a second insulating film formed between the at least two charge storage layers and the control gate. A top of the control gate has a flat surface that covers the at least two charge storage layers that correspond to the two adjacent transistors, and the flat surface extends from one of the at least two charge storage layers to the other of the at least two charge storage layers.
摘要翻译：非易失性半导体存储器包括串联连接的可重写非易失性存储单元晶体管。非易失性存储单元晶体管包括形成在第一绝缘膜上的至少两个电荷存储层，由两个非易失性存储单元晶体管彼此相邻并且彼此相邻的两个相邻晶体管共享的控制栅极和形成的第二绝缘膜在所述至少两个电荷存储层和所述控制栅极之间。控制栅极的顶部具有覆盖对应于两个相邻晶体管的至少两个电荷存储层的平坦表面，并且平坦表面从至少两个电荷存储层中的一个延伸到至少两个电荷存储层中的另一个电荷存储层。

3. 发明授权

US06577533B2 Nonvolatile semiconductor memory and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US06577533B2
公开(公告)日：2003-06-10
申请号：US09814711
申请日：2001-03-23
申请人： Koji Sakui , Toshiharu Watanabe
发明人： Koji Sakui , Toshiharu Watanabe
IPC分类号： G11C1604
CPC分类号： H01L27/11521 , G11C16/0483 , H01L27/115 , H01L27/11524
摘要： A trench region is formed in a memory cell P-type well. Two NAND-type memory cell units are respectively formed along both side wall portions of this trench region. A floating gate and a control gate in these NAND-type memory cell units are formed self-aligningly without using a photoresist. One bit line connected to the two NAND-type memory cell units is formed via an interlayer dielectric. The bit line pitch of this bit line is set at 2 F. Hence, the size of a nonvolatile semiconductor memory can be reduced.
摘要翻译：在存储单元P型阱中形成沟槽区域。沿着该沟槽区域的两个侧壁部分分别形成两个NAND型存储单元。这些NAND型存储单元单元中的浮置栅极和控制栅极自动对准地形成，而不使用光致抗蚀剂。通过层间电介质形成连接到两个NAND型存储单元单元的一位线。该位线的位线间距设置为2μF。因此，可以减小非易失性半导体存储器的尺寸。

4. 发明授权

US07884414B2 Semiconductor memory device and method of fabrication of the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07884414B2
公开(公告)日：2011-02-08
申请号：US12038383
申请日：2008-02-27
申请人： Toshiharu Watanabe
发明人： Toshiharu Watanabe
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/115 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： A semiconductor memory device includes a first memory cell transistor. The first memory cell transistor includes a tunnel insulation film provided on a semiconductor substrate, a floating electrode provided on the tunnel insulation film, an inter-gate insulation film provided on the floating electrode, and a control electrode provided on the inter-gate insulation film. The floating electrode includes a first floating electrode provided on the tunnel insulation film and a second floating electrode provided on one end portion of the first floating electrode, the floating electrode having an L-shaped cross section in a wiring direction of the control electrode.
摘要翻译：半导体存储器件包括第一存储单元晶体管。第一存储单元晶体管包括设置在半导体衬底上的隧道绝缘膜，设置在隧道绝缘膜上的浮置电极，设置在浮置电极上的栅极间绝缘膜，以及设置在栅极间绝缘膜上的控制电极。浮置电极包括设置在隧道绝缘膜上的第一浮动电极和设置在第一浮动电极的一个端部上的第二浮置电极，浮置电极在控制电极的布线方向上具有L形截面。

5. 发明申请

US20100074773A1 ELECTRIC COMPRESSOR 审中-公开
标题翻译：电动压缩机
公开(公告)号：US20100074773A1
公开(公告)日：2010-03-25
申请号：US12442493
申请日：2008-02-15
申请人： Toshiharu Watanabe , Yutaka Satou , Masaki Watanabe
发明人： Toshiharu Watanabe , Yutaka Satou , Masaki Watanabe
IPC分类号： F04C29/02 , F04B39/02
CPC分类号： F04C29/028 , F01C21/10 , F04C18/3441 , F04C23/00 , F04C23/008 , F04C2240/803 , F04C2240/808
摘要： A lubricating oil reservoir provided at the bottom of a housing is placed under the compression mechanism or electric motor in the vicinity of the mounting bracket provided on the lower outside of a middle case. The lubricating oil reservoir can be provided efficiently using dead space formed under the compression mechanism in the housing, and the rigidity of the mounting bracket can secure the strength of the lubricating oil reservoir.
摘要翻译：设置在壳体底部的润滑油容器设置在设置在中间壳体的下部外侧的安装支架附近的压缩机构或电动机的下方。可以通过壳体内的压缩机构下方的死空间有效地提供润滑油储存器，并且安装支架的刚性可以确保润滑油储存器的强度。

6. 发明授权

US07328739B2 Heat exchanger for vehicle 失效
标题翻译：车辆换热器
公开(公告)号：US07328739B2
公开(公告)日：2008-02-12
申请号：US10777943
申请日：2004-02-12
申请人： Toshiharu Watanabe , Naohisa Kamiyama , Nobuyasu Suematsu
发明人： Toshiharu Watanabe , Naohisa Kamiyama , Nobuyasu Suematsu
IPC分类号： B60H1/00
CPC分类号： F16H57/0415 , F25B2339/044 , F28D1/0417 , F28D1/0452 , F28D2021/0084 , F28D2021/0089 , F28F9/0202 , F28F9/0246 , F28F9/0253 , F28F2270/00
摘要： The heat exchanger includes a condenser and a refrigerant passage connected to the condenser. The refrigerant passage allows a refrigerant to flow into and flow out of the condenser in opposite directions. As a result, the refrigerant passage can be provided on one side of the condenser with an inlet and an outlet facing the same direction. The connection between the refrigerant passage and the air conditioning system is carried out on one side of the condenser only, improving the operative efficiency.
摘要翻译：热交换器包括冷凝器和连接到冷凝器的制冷剂通道。制冷剂通道允许制冷剂在相反的方向流入和流出冷凝器。结果，制冷剂通道可以设置在冷凝器的一侧，具有面向相同方向的入口和出口。制冷剂通道与空调系统之间的连接仅在冷凝器的一侧进行，提高了操作效率。

7. 发明授权

US5385338A Apparatus for melting aluminum alloy scraps 失效
标题翻译：用于熔炼铝合金废料的设备
公开(公告)号：US5385338A
公开(公告)日：1995-01-31
申请号：US46315
申请日：1993-04-15
申请人： Yasushi Sato , Toshiharu Watanabe
发明人： Yasushi Sato , Toshiharu Watanabe
IPC分类号： C22B9/16 , C22B21/00 , C22B21/06 , C22C1/02 , F27B3/04 , F27B3/18 , F27D3/00 , F27D27/00 , C22B9/187
CPC分类号： F27B3/045 , C22B21/0092 , F27B3/18 , F27D2003/0039 , F27D2003/0054 , Y02P10/218 , Y10S266/901
摘要： Disclosed is a process for melting aluminum alloy scraps which comprises the steps of: giving a rotation force to molten metal reserved in a cylindrical chamber so that the molten metal is made swollen up along the inner circumferential surface of the cylindrical chamber by a centrifugal force caused by the rotation force while the liquid-phase surface of the molten metal is kept so as to draw a parabola to thereby produce a vortex flow in the molten metal; and introducing aluminum alloy scraps into the vortex flow. Further disclosed is an apparatus for melting aluminum alloy scraps which comprises: a furnace body; a melt-material introduction portion having a cylindrical shape and being provided in the furnace body so as to communicate with the furnace body so that molten metal in the furnace body circulates to flow into the melt-material introduction portion; and a moving magnetic field generator provided along the outer wall of the melt-material introduction portion so as to cover the outer wall of the melt-material introduction portion.
摘要翻译：公开了一种熔融铝合金废料的方法，该方法包括以下步骤：向留在圆筒形室中的熔融金属施加旋转力，使得熔融金属通过离心力沿着圆柱形室的内圆周表面膨胀通过旋转力，同时保持熔融金属的液相表面以引出抛物线，从而在熔融金属中产生涡流; 并将铝合金废料引入涡流。进一步公开了一种用于熔化铝合金废料的设备，其包括：炉体; 熔体材料导入部，其具有圆筒形状，并且设置在炉体中，以与炉体连通，使得炉体中的熔融金属循环流入熔体材料导入部分; 以及沿熔融材料导入部分的外壁设置以覆盖熔体材料导入部分的外壁的移动磁场发生器。

8. 发明授权

US08711602B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08711602B2
公开(公告)日：2014-04-29
申请号：US13428246
申请日：2012-03-23
申请人： Toshiharu Watanabe , Yoshiaki Asao
发明人： Toshiharu Watanabe , Yoshiaki Asao
IPC分类号： G11C11/00 , H01L45/00 , G11C11/16 , H01L27/02 , G11C11/404 , G11C13/00
CPC分类号： G11C11/165 , G11C11/16 , G11C11/1653 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C11/404 , G11C13/0002 , G11C13/0069 , G11C2213/79 , H01L27/0207 , H01L45/1206 , H01L45/1233 , H01L45/124
摘要： A semiconductor memory device includes: plural word lines extending in a first direction; first to third bit lines extending in a second direction that intersects with the first direction; plural variable resistance elements each having a first terminal connected to either one of the first and third bit lines; plural active areas extending in a direction oblique to the first direction while intersecting with the first to third bit lines; plural select transistors provided on the active areas and each having a gate connected to a corresponding one of the word lines, and a current path whose one end is connected to a second terminal of a corresponding one of the variable resistance elements; and plural contact plugs each connecting the other end of the current path of a corresponding one of the select transistors to the second bit line.
摘要翻译：半导体存储器件包括：沿第一方向延伸的多个字线; 沿与第一方向相交的第二方向延伸的第一至第三位线; 多个可变电阻元件，每个具有连接到第一和第三位线中的任一个的第一端子; 在与第一至第三位线交叉的同时沿与第一方向倾斜的方向延伸的多个有效区域; 设置在有源区上的多个选择晶体管，每一个具有连接到相应一个字线的栅极，以及电流路径，其一端连接到相应的一个可变电阻元件的第二端子; 以及多个接触插头，每个接触插头将选择晶体管中的相应一个选择晶体管的电流通路的另一端连接到第二位线。

9. 发明授权

US07562733B2 Radiator core support 有权
标题翻译：散热器核心支持
公开(公告)号：US07562733B2
公开(公告)日：2009-07-21
申请号：US11637244
申请日：2006-12-12
申请人： Toshiharu Watanabe , Hideki Kobayashi , Shinji Araki , Osamu Ito , Eiichi Mori
发明人： Toshiharu Watanabe , Hideki Kobayashi , Shinji Araki , Osamu Ito , Eiichi Mori
IPC分类号： B60K11/04
CPC分类号： B62D25/084
摘要： A radiator core support includes a radiator core support main body that is made of plastic material, a right fixing member and a left fixing member that are made of metal, and a first metal frame. The right fixing member and the left fixing member are fixed on a right side member and a left side member of a motor vehicle body, respectively. The first metal frame extends in a lateral direction of the motor vehicle body so as to connect the right fixing member and the left fixing member with each other and support the radiator core support main body.
摘要翻译：散热器芯支撑件包括由塑料材料制成的散热器芯支撑主体，由金属制成的右固定构件和左固定构件，以及第一金属框架。右固定构件和左固定构件分别固定在机动车身的右侧构件和左侧构件上。第一金属框架沿着机动车体的横向方向延伸，以将右固定构件和左固定构件彼此连接并支撑散热器芯支撑主体。

10. 发明申请

US20080036201A1 Structure and Method for Connecting Pipes of Heat Exchanger 审中-公开
标题翻译：换热器连接管的结构与方法
公开(公告)号：US20080036201A1
公开(公告)日：2008-02-14
申请号：US11577021
申请日：2005-09-30
申请人： Osamu Ito , Toshiharu Watanabe , Nobuyasu Suematsu , Yasutaka Tominaga
发明人： Osamu Ito , Toshiharu Watanabe , Nobuyasu Suematsu , Yasutaka Tominaga
IPC分类号： F16L3/22 , B23P15/26 , F28F1/10
CPC分类号： F16L37/088 , F16L21/08 , F16L23/00 , F28F9/0246 , F28F9/0256 , Y10T29/53113 , Y10T29/5367
摘要： Second pipes (2Ha to 2Hf) for circulating a fluid are respectively connected to a plurality of first pipes (1Ha to 1Hd) formed in a heat exchanger (R) or to a plurality of first pipes (1Ha to 1Hf) formed in and around the heat exchanger (R) . Groups (A to C) formed by arranging the first pipes (1Ha to 1Hf) in units of specified quantities (including a single pipe) along a vertical direction are formed in the state of being not overlapped with each other in a lateral direction of a vehicle.
摘要翻译：用于使流体循环的第二管（2 Ha至2 Hf）分别连接到形成在热交换器（R）中的多个第一管（1 Ha至1 Hd）或多个第一管（1 Ha至1 Hf ）形成在热交换器（R）中和周围。沿着垂直方向以规定量（包括单个管）为单位布置第一管（1 Ha至1 Hf）而形成的组（A至C）形成为在横向方向上彼此不重叠的状态的车辆

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式