专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US06448688B2 Hard carbon film and surface-acoustic-wave substrate 失效
标题翻译：硬碳膜和表面声波衬底
公开(公告)号：US06448688B2
公开(公告)日：2002-09-10
申请号：US09739210
申请日：2000-12-19
申请人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
发明人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H01L4108
CPC分类号： C23C16/26 , H03H3/08 , H03H9/02582 , Y10T428/30
摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.
摘要翻译：本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。

22. 发明授权

US06356006B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06356006B1
公开(公告)日：2002-03-12
申请号：US09543415
申请日：2000-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： B32B3300
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond,surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石，表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

23. 发明授权

US06416865B1 Hard carbon film and surface acoustic-wave substrate 失效
标题翻译：硬碳膜和表面声波衬底
公开(公告)号：US06416865B1
公开(公告)日：2002-07-09
申请号：US09400193
申请日：1999-09-21
申请人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
发明人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H03H8165
CPC分类号： C23C16/26 , H03H3/08 , H03H9/02582 , Y10T428/30
摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.
摘要翻译：本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。

24. 发明授权

US06210780B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 有权
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06210780B1
公开(公告)日：2001-04-03
申请号：US09166840
申请日：1998-10-06
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H01L4118
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

25. 发明授权

US07432186B2 Method of surface treating substrates and method of manufacturing III-V compound semiconductors 失效
标题翻译：表面处理基板的方法和制造III-V族化合物半导体的方法
公开(公告)号：US07432186B2
公开(公告)日：2008-10-07
申请号：US11425394
申请日：2006-06-21
申请人： Takayuki Nishiura , Tomoki Uemura
发明人： Takayuki Nishiura , Tomoki Uemura
IPC分类号： H01L21/3205
CPC分类号： H01L21/02052 , Y10S438/906
摘要： Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growth is reduced. The methods include preparing a substrate made of a Group III-V semiconductor compound (S10), and cleaning the substrate with a cleaning solution whose pH has been adjusted to an acidity of 2 to 6.3 inclusive, and to which an oxidizing agent has been added (S20).
摘要翻译：提供表面处理基板和制造III-V族化合物半导体的方法，其中由III-V族半导体化合物制成的基板被化学计量，并且在外延生长之后的表面上的微观粗糙度降低。所述方法包括制备由III-V族半导体化合物（S10）制成的衬底，并用pH调节至2〜6.3的含量的清洁溶液清洗该衬底，并将氧化剂添加（S 20）。

26. 发明申请

US20080292877A1 Method of Cleaning Gaas Substrate, Method of Producing Gaas Substrate, Method of Fabricating Epitaxial Susbstrate, and Gaas Wafer 审中-公开
标题翻译：清除高温基板的方法，生产Gaas基板的方法，制造外延芯片的方法和Gaas晶片
公开(公告)号：US20080292877A1
公开(公告)日：2008-11-27
申请号：US10569727
申请日：2005-04-25
申请人： Yusuke Horie , Takayuki Nishiura , Tomoki Uemura
发明人： Yusuke Horie , Takayuki Nishiura , Tomoki Uemura
IPC分类号： B32B5/16 , C09K13/00 , B08B3/08 , H01L21/20 , H01L21/302 , C22C28/00
CPC分类号： H01L21/02052 , Y10T428/265
摘要： The present invention provides a method of cleaning a GaAs substrate with less precipitate particles after cleaning. This cleaning method comprises an acid cleaning step (S11), a deionized water rinsing step (S12), and a rotary drying step (S13). First, a GaAs substrate with a mirror finished surface is immersed in an acid cleaning solution in the acid cleaning step (S11). In the acid cleaning step, the cleaning time is less than 30 seconds. Next, the deionized water rinsing step performs the cleaned GaAs substrate with deionized water (S12) to wash away the cleaning solution deposited thereon. Subsequently, the rotary drying step dries the GaAs substrate deposited on deionized water (S13). This provides the cleaned GaAs substrate with less precipitate particles.
摘要翻译：本发明提供一种在清洗后用较少析出物颗粒清洗GaAs衬底的方法。该清洗方法包括酸洗步骤（S11），去离子水漂洗步骤（S12）和旋转干燥步骤（S13）。首先，在酸洗工序中将具有镜面的表面的GaAs衬底浸渍在酸洗液中（S11）。在酸洗步骤中，清洗时间少于30秒。接下来，去离子水漂洗步骤用去离子水进行清洗的GaAs衬底（S12），以清洗其上沉积的清洗溶液。随后，旋转干燥步骤干燥沉积在去离子水上的GaAs衬底（S13）。这为清洁的GaAs衬底提供了较少的沉淀颗粒。

27. 发明授权

US06805808B2 Method for separating chips from diamond wafer 失效
标题翻译：从金刚石晶片分离芯片的方法
公开(公告)号：US06805808B2
公开(公告)日：2004-10-19
申请号：US10129925
申请日：2002-05-13
申请人： Satoshi Fujii , Noboru Gotou , Tomoki Uemura , Toshiaki Saka , Katsuhiro Itakura
发明人： Satoshi Fujii , Noboru Gotou , Tomoki Uemura , Toshiaki Saka , Katsuhiro Itakura
IPC分类号： H01L21301
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/30 , B23K2103/50
摘要： A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.

28. 发明授权

US06525235B2 Method for manufacturing 2,6-dimethylnaphthalene 有权
公开(公告)号：US06525235B2
公开(公告)日：2003-02-25
申请号：US09965822
申请日：2001-10-01
申请人： Shingo Yoshida , Masahiro Motoyuki , Tomoki Uemura , Koji Yamamoto
发明人： Shingo Yoshida , Masahiro Motoyuki , Tomoki Uemura , Koji Yamamoto
IPC分类号： C07C714
CPC分类号： C07C7/14 , C07C15/24
摘要： The present invention provides a method for manufacturing a highly pure 2,6-dimethylnaphthalene having a purity of 99% or more even when a mixture of dimethylnaphthalene isomers containing 5 wt % or more of 2,7-dimethylnaphthalate is used as a feedstock. The method for manufacturing 2,6-dimethylnaphthalene comprises a step of performing crystallization and solid-liquid separation of a liquid primarily containing dimethylnaphthalene isomers so that the liquid is separated into a cake containing the dimethylnaphthalene isomers and a mother liquor, and a step of performing separation/purification of the cake. In the method described above, the crystallization and the solid-liquid separation are performed under the condition in which the ratio of the content of 2,6-dimethylnaphthalene in the mother liquor to that of 2,7-dimethylnaphthalene therein is not less than 1 so that the content of 2,6-dimethylnaphthalene in the cake is 60% or more and that the content of 2,7-dimethylnaphthalene therein is 6.5% or less. As a result, a highly pure 2,6-dimethylnaphthalene is obtained by performing the separation/purification of the cake.

29. 发明申请

US20130153368A1 FEEDING SYSTEM FOR REDUCED IRON MATERIAL 有权
标题翻译：减少铁材料的进料系统
公开(公告)号：US20130153368A1
公开(公告)日：2013-06-20
申请号：US13820263
申请日：2011-08-31
申请人： Osamu Tsuge , Tomoki Uemura
发明人： Osamu Tsuge , Tomoki Uemura
IPC分类号： B65G27/00
CPC分类号： B65G27/00 , C21B13/0053 , C21B13/10 , F27B9/16 , F27B9/38 , F27D2003/0004
摘要： Not only the cracking of granular reduced iron materials is reduced, but also reduced iron materials are fed uniformly onto a furnace floor regardless of a width of the furnace floor. A feeding system for reduced iron material includes a plurality of material feeding equipments 4 provided in a furnace width direction of a mobile furnace floor type reduction melting furnace, wherein each of the material feeding equipments 4 is constructed by a hopper 10 configured to receive reduced iron materials and discharge the materials from a discharge port 10a, a trough 14 configured to connect the discharge port 10a and a material charging portion of the mobile furnace floor type reduction melting furnace configured to receive the reduced iron materials discharged from the discharge port 10a, an exit portion provided on an exit side of the trough 14, and a vibration applying unit configured to cause the trough to vibrate along a furnace floor moving direction.
摘要翻译：不仅减少了粒状还原铁材料的破裂，而且还减少了铁材料均匀地进料到炉底，而不管炉底的宽度如何。用于还原铁材料的进料系统包括设置在移动式炉底式还原熔炉的炉宽方向上的多个供料设备4，其中每个供料设备4由构造成容纳还原铁的料斗10构成材料并从排出口10a排出材料，将构造成连接排出口10a的槽14和构造成容纳从排出口10a排出的还原铁物质的移动式炉底型减速熔炉的材料充填部，设置在槽14的出口侧的出口部，以及构造成使槽沿着炉底移动方向振动的振动施加单元。

30. 发明授权

US08915352B2 Feeding system for reduced iron material 有权
标题翻译：还原铁材料进料系统
公开(公告)号：US08915352B2
公开(公告)日：2014-12-23
申请号：US13820263
申请日：2011-08-31
申请人： Osamu Tsuge , Tomoki Uemura
发明人： Osamu Tsuge , Tomoki Uemura
IPC分类号： B65G27/00 , C21B13/00 , C21B13/10 , F27B9/16 , F27B9/38 , F27D3/00
CPC分类号： B65G27/00 , C21B13/0053 , C21B13/10 , F27B9/16 , F27B9/38 , F27D2003/0004
摘要： Not only the cracking of granular reduced iron materials is reduced, but also reduced iron materials are fed uniformly onto a furnace floor regardless of a width of the furnace floor. A feeding system for reduced iron material includes a plurality of material feeding equipments 4 provided in a furnace width direction of a mobile furnace floor type reduction melting furnace, wherein each of the material feeding equipments 4 is constructed by a hopper 10 configured to receive reduced iron materials and discharge the materials from a discharge port 10a, a trough 14 configured to connect the discharge port 10a and a material charging portion of the mobile furnace floor type reduction melting furnace configured to receive the reduced iron materials discharged from the discharge port 10a, an exit portion provided on an exit side of the trough 14, and a vibration applying unit configured to cause the trough to vibrate along a furnace floor moving direction.
摘要翻译：不仅减少了粒状还原铁材料的破裂，而且还减少了铁材料均匀地进料到炉底，而不管炉底的宽度如何。用于还原铁材料的进料系统包括设置在移动式炉底式还原熔炉的炉宽方向上的多个供料设备4，其中每个供料设备4由构造成容纳还原铁的料斗10构成材料并从排出口10a排出材料，将构造成连接排出口10a的槽14和构造成容纳从排出口10a排出的还原铁物质的移动式炉底型减速熔炉的材料充填部，设置在槽14的出口侧的出口部，以及构造成使槽沿着炉底移动方向振动的振动施加单元。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式