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21. 发明申请

US20080151596A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
公开(公告)号：US20080151596A1
公开(公告)日：2008-06-26
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/063 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

22. 发明授权

US07388776B1 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US07388776B1
公开(公告)日：2008-06-17
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

23. 发明授权

US07043823B2 Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions 有权
标题翻译：制造具有氧化自由层侧面区域的电流 - 垂直于平面的磁阻器件的方法
公开(公告)号：US07043823B2
公开(公告)日：2006-05-16
申请号：US10869590
申请日：2004-06-15
申请人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
发明人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要翻译：电流垂直于平面（CPP）的磁阻器件，例如磁性隧道结（MTJ），是通过将覆盖层（例如，使用抗蚀剂）图案化成下层自由铁磁性的中心区域层又依赖于MTJ的附加层。通过离子铣削或蚀刻到自由铁磁层中去除覆盖层的侧面区域。然后将铁磁性层的未掩模的侧面区域氧化，使其局部非铁磁性并电绝缘。

24. 发明授权

US07016167B2 Spin valve transistor with stabilization and method for producing the same 失效
标题翻译：具有稳定性的旋转阀晶体管及其制造方法
公开(公告)号：US07016167B2
公开(公告)日：2006-03-21
申请号：US10406779
申请日：2003-04-03
申请人： Robert E. Fontana, Jr. , Jeffrey S. Lille
发明人： Robert E. Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/127
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , H01F41/302 , H01F41/325 , H01L29/66984 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
摘要翻译：自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的绝缘层，与绝缘层相邻的偏置层，邻近偏置层的非磁性层，以及铁磁层非磁性层，其中绝缘层和非磁性层包括反铁磁材料。磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。偏置层位于绝缘层和非磁性层之间。偏置层是磁性的，并且是基极区域中的磁性材料的厚度的至少三倍。

25. 发明授权

US06778364B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
标题翻译：具有具有非磁性氧化物中心区域的纵向偏置层的电流平面内磁阻传感器和用于制造传感器的方法
公开(公告)号：US06778364B2
公开(公告)日：2004-08-17
申请号：US10230903
申请日：2002-08-28
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.
摘要翻译：电流平面（CIP）巨磁阻（GMR）自旋阀传感器通过使用自由层末端反铁磁交换耦合的纵向偏置使其自由层磁化稳定。在自由层上形成诸如Ru的反平行耦合（APC）层，并且在APC层上形成铁磁偏置层。偏置层是在自由层的整个宽度上延伸的连续层。偏置层的中心区域由构成偏置层的一个或多个元件的非磁性氧化物形成，偏置层端部区域保持铁磁性。偏置层的氧化中心区域定义了下层自由层的中心主动轨道宽度区域。偏置层的铁磁端区域跨越APC层反铁磁耦合到相应的下游自由层端部区域以提供纵向偏置。

26. 发明授权

US06324036B1 Combination inductive write head and magnetoresistive (MR) read head with improved topography 有权
标题翻译：组合感应写磁头和磁阻（MR）读头，具有改进的形貌
公开(公告)号：US06324036B1
公开(公告)日：2001-11-27
申请号：US09320480
申请日：1999-05-26
申请人： Frederick Hayes Dill, Jr. , Robert E. Fontana, Jr. , Eric James Lee
发明人： Frederick Hayes Dill, Jr. , Robert E. Fontana, Jr. , Eric James Lee
IPC分类号： G11B5147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3967 , G11B2005/3996
摘要： An apparatus and method of making is disclosed for a combination read/write head having improved topography. The disclosed read/write head combines a magnetoresistive (MR) read head with an inductive magnetic write head. The head is planarized at a second shield layer with a planarization layer such that pads and leads connecting the pads to the MR sensor and coil are on a planar surface of the planaritzation layer. This planarization layer allows first and second shield layers to be optimized for the MR sensor to be used and also separates the pads and leads from the substrate. The combination head has first and second shield layers formed on a substrate, the shield layers being separated by a read gap. A magnetoresistive (MR) sensor and MR leads are located in the read gap. The planarization layer is then formed on the substrate, surrounding the first and second shield layers creating a planar surface that is coplanar with a top surface of the second shield layer. A write gap layer is fabricated along with a pole piece. The pole piece being separated by the write gap layer at the ABS and connected to the second shield layer at a back gap that is recessed in the head from the ABS. An insulation layer and coil layer embedded in the insulation layer with the insulation layer and the coil layer being located between the second shield layer and the pole piece. Pads and leads are formed on the planarization layer, with the leads electrically connected to the MR sensor and the coil.
摘要翻译：公开了一种具有改进的形貌的组合读/写头的制造装置和方法。所公开的读/写头将磁阻（MR）读头与感应磁写头相结合。头部在具有平坦化层的第二屏蔽层处被平坦化，使得将焊盘连接到MR传感器和线圈的焊盘和引线位于平面化层的平面表面上。该平坦化层允许为要使用的MR传感器优化第一和第二屏蔽层，并且还将衬垫和引线与衬底分离。组合头具有形成在基板上的第一和第二屏蔽层，屏蔽层被读取间隙分开。磁阻（MR）传感器和MR引线位于读取间隙中。然后在衬底上形成平坦化层，围绕第一和第二屏蔽层，形成与第二屏蔽层的顶表面共平面的平坦表面。写间隙层与极片一起制造。该极片在ABS处由写入间隙层分开，并且在与ABS相对的头部凹陷的后部间隙处连接到第二屏蔽层。绝缘层和线圈层嵌入绝缘层中，绝缘层和线圈层位于第二屏蔽层和极片之间。在平坦化层上形成垫和引线，引线电连接到MR传感器和线圈。

27. 发明授权

US5561368A Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate 失效
标题翻译：桥式电路磁场传感器具有形成在公共基板上的自旋阀磁阻元件
公开(公告)号：US5561368A
公开(公告)日：1996-10-01
申请号：US334659
申请日：1994-11-04
申请人： Moris M. Dovek , Robert E. Fontana, Jr. , Virgil S. Speriosu , Jaquelin K. Spong
发明人： Moris M. Dovek , Robert E. Fontana, Jr. , Virgil S. Speriosu , Jaquelin K. Spong
IPC分类号： G01R33/09 , H01L43/08 , G01R33/02
CPC分类号： B82Y25/00 , G01R33/093
摘要： A magnetic field sensor uses four individual magnetoresistive spin valve elements electrically connected in a bridge circuit. The spin valve elements are lithographically formed on the same substrate with their free layers having their magnetization axes parallel to one another. An electrically conductive fixing layer is formed on the substrate but is insulated from the spin valve elements. The application of current through the fixing conductor during fabrication of the field sensor fixes the direction of magnetization of two of the pinned layers to be antiparallel to the direction of magnetization of the other two pinned layers. The bridge circuit output voltage is responsive to an external magnetic field in the plane of the sensor. By appropriate fixing of the direction of magnetization of the pinned layers during sensor fabrication, and appropriate connection to the input and output leads, the bridge circuit output voltage is a measure of either the magnetic field or field gradient. The fixing conductor, or a separate current strap formed on the substrate, can be used to pass an unknown current over the sensor, in which case the bridge circuit output voltage is a measure of the unknown current.
摘要翻译：磁场传感器使用在桥式电路中电连接的四个单独的磁阻自旋阀元件。自旋阀元件光刻地形成在相同的基板上，其自由层的磁化轴线彼此平行。在基板上形成导电固定层，但与自旋阀元件绝缘。在场传感器的制造期间通过固定导体的电流的施加将两个被钉扎层的磁化方向固定成与其他两个钉扎层的磁化方向反平行。桥接电路输出电压响应于传感器平面内的外部磁场。通过在传感器制造期间适当地固定被钉扎层的磁化方向，以及适当地连接到输入和输出引线，桥接电路输出电压是磁场或场梯度的量度。可以使用固定导体或形成在基板上的单独的电流带将传感器上的未知电流传递，在这种情况下桥接电路输出电压是未知电流的量度。

28. 发明授权

US4156935A Block replicate magnetic bubble memory circuit for high speed data readout 失效
标题翻译：用于高速数据读取的块复制磁性气泡存储电路
公开(公告)号：US4156935A
公开(公告)日：1979-05-29
申请号：US795475
申请日：1977-05-10
申请人： David C. Bullock , Robert E. Fontana, Jr. , James T. Carlo , Shalendra K. Singh
发明人： David C. Bullock , Robert E. Fontana, Jr. , James T. Carlo , Shalendra K. Singh
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858 , G11C19/0866 , G11C19/0883
摘要： Magnetic bubble domain memory circuit in which magnetizable overlay patterns of magnetically soft material, e.g. permalloy, are provided as bubble propagation elements on a bubble-supporting magnetic layer to define major and minor bubble propagation paths. The major bubble propagation paths provide interchangeable bubble input and output sections, and the minor bubble propagation paths are in the form of closed storage loops providing a bubble storage section comprising first and second pairs of blocks. Bubble generators are provided for each of the blocks included in the first and second pairs thereof comprising the bubble storage section, along with first and second detectors and input/output tracks of bubble propagation elements associated with the respective pairs of blocks of storage loops. Swap transfer/replicate gates are disposed between the input/output tracks and each of the storage loops included in the blocks of storage loops. These gates are alternately operable in a swap transfer mode and a replicate mode so as to simultaneously transfer data as represented by magnetic bubbles and voids from the tracks to the storage loops and from the storage loops to the tracks when operated in a swap transfer mode, and to split respective magnetic bubbles incident thereon in a replicate mode to form a duplicate magnetic bubble in addition to the original magnetic bubble so as to preserve the data intact in the minor storage loop while delivering a bubble to a detector for readout. The first and second bubble detectors are 180.degree. out of phase with respect to each other and are operable during respective halfcycles of a bubble propagation cycle to sense the presence or absence of magnetic bubbles. Thus, respective data bits from different blocks are alternately sensed by the first and second bubble detectors in each bubble propagation cycle to provide a data readout rate twice the field rate.
摘要翻译：磁性气泡域记忆电路，其中磁性软材料的可磁化覆盖图案，例如，坡莫合金作为气泡传播元件提供在气泡支撑磁性层上以限定主要和次要的气泡传播路径。主要的气泡传播路径提供了可互换的气泡输入和输出部分，并且次要的气泡传播路径是封闭存储回路的形式，提供包括第一和第二对块的气泡存储部分。为包括在包括气泡存储部分的第一和第二对中的每个块以及与相应的存储循环块对相关联的气泡传播元件的第一和第二检测器和输入/输出轨道提供气泡发生器。交换传输/复制门被布置在输入/输出轨道和包含在存储循环块中的每个存储回路之间。这些栅极交替地可操作在交换传输模式和复制模式中，以便当以交换传输模式操作时，将由磁性气泡和空隙表示的数据从轨道同时传送到存储环路和从存储环路到轨道，并且以复制模式分离入射在其上的各个磁性气泡，以便除了原始磁性气泡之外还形成一个重复的磁性气泡，从而将数据保存在次要存储环路中，同时将气泡传送到检测器进行读出。第一和第二气泡检测器相对于彼此为180度异相，并且可在气泡传播周期的相应半周期期间操作以感测磁性气泡的存在或不存在。因此，在每个气泡传播周期中，来自不同块的相应数据位由第一和第二气泡检测器交替地感测，以提供两倍于场速率的数据读出速率。

29. 发明授权

US08717136B2 Inductor with laminated yoke 有权
标题翻译：带有叠片轭的电感器
公开(公告)号：US08717136B2
公开(公告)日：2014-05-06
申请号：US13347571
申请日：2012-01-10
申请人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F27/30 , H01F5/00 , H01F27/28 , H01F27/24
CPC分类号： H01F41/042 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01F2027/348
摘要： A thin film inductor having yokes, one or more of which is laminated, and one or more conductors passing between the yokes. The laminated yoke or yokes help reduce eddy currents and/or hysteresis losses.
摘要翻译：一种薄膜电感器，其具有轭，其中一个或多个层叠，以及一个或多个通过轭之间的导体。叠片磁轭或磁轭有助于减少涡流和/或磁滞损耗。

30. 发明授权

US08335056B2 CPP sensors with hard bias structures that shunt sense current towards a shield 有权
标题翻译：具有硬偏压结构的CPP传感器将屏蔽层的感应电流分流
公开(公告)号：US08335056B2
公开(公告)日：2012-12-18
申请号：US11957466
申请日：2007-12-16
申请人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
发明人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.
摘要翻译：公开了传感器和相关的制造方法。本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。光圈的宽度控制注入到传感器叠层顶部的电流密度。此外，可以形成硬偏置结构以电耦合到传感器堆叠。传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

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