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1. 发明授权

US08335056B2 CPP sensors with hard bias structures that shunt sense current towards a shield 有权
标题翻译：具有硬偏压结构的CPP传感器将屏蔽层的感应电流分流
公开(公告)号：US08335056B2
公开(公告)日：2012-12-18
申请号：US11957466
申请日：2007-12-16
申请人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
发明人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.
摘要翻译：公开了传感器和相关的制造方法。本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。光圈的宽度控制注入到传感器叠层顶部的电流密度。此外，可以形成硬偏置结构以电耦合到传感器堆叠。传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

2. 发明授权

US07821822B2 Read/write elements for a three-dimensional magnetic memory 有权
标题翻译：用于三维磁记忆体的读/写元件
公开(公告)号：US07821822B2
公开(公告)日：2010-10-26
申请号：US12191956
申请日：2008-08-14
申请人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
发明人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C5/02 , G11C11/1675 , H01L27/228
摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
摘要翻译：公开了用于三维磁存储器的读/写元件。一个实施例描述了集成读/写元件的阵列。阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。第一写入导体和第二写入导体在磁极周围形成电流环。

3. 发明授权

US06680832B2 CPP magnetoresistive sensors with in-stack longitudinal biasing and overlapping magnetic shield 失效
标题翻译： CPP磁阻传感器具有堆叠纵向偏置和重叠磁屏蔽
公开(公告)号：US06680832B2
公开(公告)日：2004-01-20
申请号：US09853352
申请日：2001-05-11
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/313 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor or read head has a magnetic shield geometry that covers the side walls of the sensor structure to prevent side reading caused by magnetic flux entering from adjacent data tracks. The shield geometry includes a bottom shield with a substantially planar surface and a specially shaped top shield. The top shield has substantially vertical portions generally parallel to the side walls of the sensor structure, a horizontal top portion over the trackwidth region of the sensor, and horizontal side portions formed over the portions of the bottom shield on either side of the sensor structure. The insulating gap material that separates the bottom and top shields is in contact with the horizontal portions of the bottom shield and the side walls of the sensor structure.
摘要翻译：电流垂直平面（CPP）磁阻传感器或读头具有覆盖传感器结构的侧壁的磁屏蔽几何形状，以防止由相邻数据轨道进入的磁通量引起的侧读。屏蔽几何形状包括具有基本平坦表面的底部屏蔽和特别形状的顶部屏蔽。顶部屏蔽件具有大致平行于传感器结构的侧壁的大致垂直部分，在传感器的轨道宽度区域上方的水平顶部部分，以及形成在传感器结构的任一侧上的底部屏蔽部分之上的水平侧部分。分离底部和顶部屏蔽件的绝缘间隙材料与底部屏蔽件的水平部分和传感器结构的侧壁接触。

4. 发明授权

US06440639B1 High-aspect ratio resist development using safe-solvent mixtures of alcohol and water 失效
标题翻译：使用酒精和水的安全溶剂混合物的高纵横比抗蚀剂显影
公开(公告)号：US06440639B1
公开(公告)日：2002-08-27
申请号：US09672187
申请日：2000-09-28
申请人： Robert E. Fontana, Jr. , Jordan A. Katine , Ernst Kratschmer , Michael J. Rooks , Ching H. Tsang , Raman Gobichettipalayam Viswanathan
发明人： Robert E. Fontana, Jr. , Jordan A. Katine , Ernst Kratschmer , Michael J. Rooks , Ching H. Tsang , Raman Gobichettipalayam Viswanathan
IPC分类号： G03C516
CPC分类号： G03F7/322 , G03F7/00
摘要： A high-aspect ratio resist profile is obtained using a development process wherein a mixture of an alcohol and water is used as the developer. The alcohol/water mixture is non-toxic, and does not cause excess swelling and cracking of the resist during the development process.
摘要翻译：使用醇和水的混合物作为显影剂的显影方法获得高纵横比抗蚀剂轮廓。醇/水混合物是无毒的，并且在显影过程中不会引起抗蚀剂的过度膨胀和开裂。

5. 发明授权

US06847510B2 Magnetic tunnel junction device with bottom free layer and improved underlayer 有权
标题翻译：具有底部自由层和改进的底层的磁隧道连接装置
公开(公告)号：US06847510B2
公开(公告)日：2005-01-25
申请号：US10256722
申请日：2002-09-27
申请人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/31 , G11B5/39 , H01L43/08 , G11C11/16
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) device usable as a magnetic memory cell or magnetoresistive sensor, such as a MTJ read head for magnetic recording, has the free ferromagnetic layer located on the bottom of the device, the bottom free layer being formed on a special underlayer. The MTJ read head may be a flux-guided head that uses the free layer as a flux guide for directing magnetic flux from the magnetic media to the sensing region of the MTJ. The special underlayer for the growth of the free layer is an alloy comprising Mn, one of Pt, Ni, Ir and Os, and an additive X selected from Ta, Al, Ti, Cu, Cr and V. Without the additive, the underlayer alloy is antiferromagnetic. The additive is present in an amount sufficient to render the alloy to have no magnetic ordering, i.e., it is neither antiferromagnetic nor ferromagnetic, but without substantially affecting the preferred crystalline texture and unit cell size so that the underlayer is well-suited as a growth-enhancing underlayer for the free layer.
摘要翻译：可用作磁存储单元或磁阻传感器（例如用于磁记录的MTJ读头）的磁隧道结（MTJ）器件具有位于器件底部的自由铁磁层，底部自由层形成于特殊的底层 MTJ读头可以是磁通引导头，其使用自由层作为磁通引导件，用于将磁通量从磁介质引导到MTJ的感测区域。用于生长自由层的特殊底层是包含Mn，Pt，Ni，Ir和Os之一的合金，以及选自Ta，Al，Ti，Cu，Cr和V的添加剂X.没有添加剂，底层合金是反铁磁的。添加剂的存在量足以使合金不具有磁性排列，即它既不是反铁磁性的也不是铁磁性的，但是基本上不影响优选的晶体结构和晶胞尺寸，使得底层非常适合作为生长 - 增强自由层的底层。

6. 发明授权

US06671139B2 In-stack longitudinal bias structure for CIP spin valve sensors with bias layer electrically insulated from free layer 有权
标题翻译：用于具有与自由层电绝缘的偏置层的CIP自旋阀传感器的堆叠纵向偏置结构
公开(公告)号：US06671139B2
公开(公告)日：2003-12-30
申请号：US10066067
申请日：2002-01-31
申请人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A magnetization of a ferromagnetic free layer of a current-in-plane (CIP) sensor is stabilized using an in-stack longitudinal bias structure that includes a ferromagnetic bias layer and an anti-ferromagnetic bias layer. An electrically insulating layer separates the ferromagnetic free layer and the in-stack longitudinal bias structure, and thus the leads attached to the CIP sensor do not make direct electrical contact with the in-stack longitudinal bias structure. As a result, the sense current shunted by the in-stack longitudinal bias structure is prevented. Since a width along the off track direction of the in-stack longitudinal bias structure is greater than the track-width of the CIP sensor, the edge magnetostatic coupling filed acting on the ferromagnetic free layer from the track width edges of the in-stack longitudinal bias structure is reduced to approximately zero.
摘要翻译：使用包括铁磁偏置层和反铁磁偏置层的堆叠内纵向偏置结构来稳定电流平面（CIP）传感器的铁磁自由层的磁化。电绝缘层分离铁磁自由层和堆叠内纵向偏置结构，因此连接到CIP传感器的引线不与堆叠内纵向偏置结构直接电接触。结果，防止了由堆叠内纵向偏置结构分流的感测电流。由于沿着堆叠内纵向偏置结构的偏离轨道方向的宽度大于CIP传感器的轨道宽度，因此边缘静磁耦合场从堆叠纵向偏移结构的轨道宽度边缘起作用在铁磁自由层上偏置结构减少到大约零。

7. 发明授权

US07043823B2 Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions 有权
标题翻译：制造具有氧化自由层侧面区域的电流 - 垂直于平面的磁阻器件的方法
公开(公告)号：US07043823B2
公开(公告)日：2006-05-16
申请号：US10869590
申请日：2004-06-15
申请人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
发明人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要翻译：电流垂直于平面（CPP）的磁阻器件，例如磁性隧道结（MTJ），是通过将覆盖层（例如，使用抗蚀剂）图案化成下层自由铁磁性的中心区域层又依赖于MTJ的附加层。通过离子铣削或蚀刻到自由铁磁层中去除覆盖层的侧面区域。然后将铁磁性层的未掩模的侧面区域氧化，使其局部非铁磁性并电绝缘。

8. 发明授权

US08045298B2 Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same 有权
标题翻译：具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端子磁感测装置及其制造方法
公开(公告)号：US08045298B2
公开(公告)日：2011-10-25
申请号：US12004235
申请日：2007-12-20
申请人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Jui-Lung Li , Sergio Nicoletti
发明人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Jui-Lung Li , Sergio Nicoletti
IPC分类号： G11B5/33
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/33 , G11B5/39
摘要： A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.
摘要翻译：公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置（TTM）及其制造方法。在一个说明性示例中，在收集器基板上形成一个或多个第一传感器层（例如包括“基”层）。然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。中心开口具有用于定义TTM的轨道宽度（TW）的宽度。接下来，通过图案化的绝缘体的中心开口，在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。提供了各种实施例和技术。

9. 发明授权

US07639459B2 Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure 失效
标题翻译：具有叠层纵向偏置层结构的三端磁传感器
公开(公告)号：US07639459B2
公开(公告)日：2009-12-29
申请号：US11032598
申请日：2005-01-10
申请人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Jeffrey S. Lille
发明人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01L29/66984 , H01L43/08
摘要： In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
摘要翻译：在一个说明性示例中，适用于磁头的三端磁传感器（TTM）具有包括基极区域，集电极区域和发射极区域的传感器堆叠结构。第一阻挡层将发射极区域与基极区域分开，并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线，耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。优选地，基区由自由层结构组成，以便具有相对较小的厚度。被钉扎层结构是发射极区域的一部分。堆叠纵向偏置层（LBL）结构与传感器堆叠结构堆叠形成，并且具有平行于TTM的感测平面的磁矩，用于磁偏置自由层结构。叠层LBL结构是集成区域的一部分，其还包括半导体材料层。在一个变型中，发射极区域具有叠层LBL结构，并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。

10. 发明授权

US06778364B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
标题翻译：具有具有非磁性氧化物中心区域的纵向偏置层的电流平面内磁阻传感器和用于制造传感器的方法
公开(公告)号：US06778364B2
公开(公告)日：2004-08-17
申请号：US10230903
申请日：2002-08-28
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.
摘要翻译：电流平面（CIP）巨磁阻（GMR）自旋阀传感器通过使用自由层末端反铁磁交换耦合的纵向偏置使其自由层磁化稳定。在自由层上形成诸如Ru的反平行耦合（APC）层，并且在APC层上形成铁磁偏置层。偏置层是在自由层的整个宽度上延伸的连续层。偏置层的中心区域由构成偏置层的一个或多个元件的非磁性氧化物形成，偏置层端部区域保持铁磁性。偏置层的氧化中心区域定义了下层自由层的中心主动轨道宽度区域。偏置层的铁磁端区域跨越APC层反铁磁耦合到相应的下游自由层端部区域以提供纵向偏置。

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