专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100002487A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
标题翻译：三维磁记忆
公开(公告)号：US20100002487A1
公开(公告)日：2010-01-07
申请号：US12553670
申请日：2009-09-03
申请人： Robert E. Fontana, JR. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, JR. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/00 , G11C11/15 , G11C11/416
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

2. 发明授权

US08018765B2 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US08018765B2
公开(公告)日：2011-09-13
申请号：US12553670
申请日：2009-09-03
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

3. 发明授权

US07606065B2 Three-dimensional magnetic memory having bits transferrable between storage layers 有权
标题翻译：具有可在存储层之间传送的位的三维磁存储器
公开(公告)号：US07606065B2
公开(公告)日：2009-10-20
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

4. 发明申请

US20080151596A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
公开(公告)号：US20080151596A1
公开(公告)日：2008-06-26
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/063 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

5. 发明授权

US07388776B1 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US07388776B1
公开(公告)日：2008-06-17
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

6. 发明申请

US20080205116A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
标题翻译：三维磁记忆
公开(公告)号：US20080205116A1
公开(公告)日：2008-08-28
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

7. 发明授权

US07821822B2 Read/write elements for a three-dimensional magnetic memory 有权
标题翻译：用于三维磁记忆体的读/写元件
公开(公告)号：US07821822B2
公开(公告)日：2010-10-26
申请号：US12191956
申请日：2008-08-14
申请人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
发明人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C5/02 , G11C11/1675 , H01L27/228
摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
摘要翻译：公开了用于三维磁存储器的读/写元件。一个实施例描述了集成读/写元件的阵列。阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。第一写入导体和第二写入导体在磁极周围形成电流环。

8. 发明申请

US20100039849A1 READ/WRITE ELEMENTS FOR A THREE-DIMENSIONAL MAGNETIC MEMORY 有权
标题翻译：三维磁记忆读/写元件
公开(公告)号：US20100039849A1
公开(公告)日：2010-02-18
申请号：US12191956
申请日：2008-08-14
申请人： Robert E. Fontana, JR. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
发明人： Robert E. Fontana, JR. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
IPC分类号： G11C11/15 , G11C11/14 , G11C11/00 , H01L21/00
CPC分类号： G11C11/15 , G11C5/02 , G11C11/1675 , H01L27/228
摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
摘要翻译：公开了用于三维磁存储器的读/写元件。一个实施例描述了集成读/写元件的阵列。阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。第一写入导体和第二写入导体在磁极周围形成电流环。

9. 发明申请

US20130170065A1 SUBSTRATE PATTERNING IN PERPENDICULAR STORAGE MEDIA 有权
标题翻译：基板存储在存储媒体中
公开(公告)号：US20130170065A1
公开(公告)日：2013-07-04
申请号：US13341997
申请日：2011-12-31
申请人： Liesl Folks , Michael K. Grobis , Dan S. Kercher , Ricardo Ruiz , Kentaro Takano , Bruce D. Terris , Qing Zhu
发明人： Liesl Folks , Michael K. Grobis , Dan S. Kercher , Ricardo Ruiz , Kentaro Takano , Bruce D. Terris , Qing Zhu
IPC分类号： G11B19/02 , G11B5/84 , G11B5/66
CPC分类号： G11B5/746 , B82Y10/00 , G11B5/855
摘要： According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a pattern formed on a substrate. The pattern includes at least a first and second feature and an edge defined between the first and second features. Additionally, the magnetic storage medium includes a magnetic layer formed on the pattern. The magnetic layer includes grains separated by a non-magnetic segregant boundary. The segregant boundary is positioned above the edge of the pattern.
摘要翻译：根据一个实施例，本文公开了图案化的磁存储介质。磁存储介质包括形成在基板上的图案。该图案至少包括第一和第二特征以及在第一和第二特征之间限定的边缘。此外，磁存储介质包括形成在图案上的磁性层。磁性层包括由非磁性分离界面分离的晶粒。分离边界位于图案边缘的上方。

10. 发明授权

US08199553B2 Multilevel frequency addressable field driven MRAM 有权
标题翻译：多电平频率可寻址磁场驱动MRAM
公开(公告)号：US08199553B2
公开(公告)日：2012-06-12
申请号：US12640081
申请日：2009-12-17
申请人： Wenyu Chen , Sylvia H. Florez Marino , Liesl Folks , Bruce D. Terris
发明人： Wenyu Chen , Sylvia H. Florez Marino , Liesl Folks , Bruce D. Terris
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.
摘要翻译：三维非易失性存储器阵列器件包括多个存储器元件和存储器控制器。多个存储元件各自具有多个位的堆叠，其又分别包括无磁性层，磁性被钉扎层和非磁性层。无磁性层被配置为基于在无磁性层的谐振频率和施加到无磁层的磁场上的射频电流来交替其磁化取向。磁性固定层具有特定的磁化取向。非磁性层位于磁性自由层和磁性固定层之间。存储器控制器与多个存储器元件中的每一个通信，并被配置为向存储器元件中的多个位写入数据并从其读取数据。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式