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21. 发明授权

US08344438B2 Electrode of an integrated circuit 有权
标题翻译：集成电路的电极
公开(公告)号：US08344438B2
公开(公告)日：2013-01-01
申请号：US12023321
申请日：2008-01-31
申请人： Uwe Schroeder , Stefan Jakschik , Johannes Heitmann , Tim Boescke , Annette Saenger
发明人： Uwe Schroeder , Stefan Jakschik , Johannes Heitmann , Tim Boescke , Annette Saenger
IPC分类号： H01L27/108 , H01L29/94 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L28/65
摘要： The present invention refers to an electrode comprising a first metallic layer and a compound comprising at least one of a nitride, oxide, and oxynitride of a second metallic material.
摘要翻译：本发明涉及包含第一金属层和包含第二金属材料的氮化物，氧化物和氧氮化物中的至少一种的化合物的电极。

22. 发明授权

US08138538B2 Interconnect structure for semiconductor devices 有权
标题翻译：半导体器件的互连结构
公开(公告)号：US08138538B2
公开(公告)日：2012-03-20
申请号：US12249060
申请日：2008-10-10
申请人： Hans-Peter Moll , Gouri Sankar Kar , Martin Popp , Lars Heineck , Peter Lahnor , Arnd Scholz , Stefan Jakschik , Wolfgang Roesner , Gerhard Enders , Werner Graf , Peter Baars , Klaus Muemmler , Bernd Hintze , Andrei Josiek
发明人： Hans-Peter Moll , Gouri Sankar Kar , Martin Popp , Lars Heineck , Peter Lahnor , Arnd Scholz , Stefan Jakschik , Wolfgang Roesner , Gerhard Enders , Werner Graf , Peter Baars , Klaus Muemmler , Bernd Hintze , Andrei Josiek
IPC分类号： H01L27/108
CPC分类号： H01L27/10891 , H01L27/10823 , H01L27/10876 , H01L27/10885
摘要： One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.
摘要翻译：一个实施例涉及形成在半导体主体上的集成电路，其具有在第一和第二晶体管的源/漏区之间的互连。互连件包括布置在半导体本体表面下方的金属体。接触元件建立金属体与第一和第二晶体管的源/漏区之间的电接触。接触元件沿着第一和第二晶体管的源极/漏极区域之间的连接路径延伸。还公开了其它方法，装置和系统。

23. 发明申请

US20070161180A1 Automatic layer deposition process 审中-公开
标题翻译：自动层沉积工艺
公开(公告)号：US20070161180A1
公开(公告)日：2007-07-12
申请号：US11331441
申请日：2006-01-13
申请人： Elke Erben , Stefan Jakschik , Alfred Kersch , Angela Link , Jonas Sundqvist
发明人： Elke Erben , Stefan Jakschik , Alfred Kersch , Angela Link , Jonas Sundqvist
IPC分类号： H01L21/8242
CPC分类号： C23C16/45531 , C23C16/34 , C23C16/45525 , H01L21/3141 , H01L21/318 , H01L28/40
摘要： The atomic layer deposition process according to the invention provides the following steps for the production of homogeneous layers on a substrate. The substrate is introduced into a reaction chamber. A first precursor is introduced into the reaction chamber, which first precursor reacts on the surface of the substrate to form an intermediate product. A second precursor is introduced into the reaction chamber, which second precursor has a low sticking coefficient and reacts with part of the intermediate product to form a first product. A third precursor is introduced into the reaction chamber, which third precursor has a high sticking coefficient and reacts with the remaining part of the intermediate product to form a second product. The second precursor and its first product reduce the effective sticking coefficient of the third precursor by partially covering the surface.
摘要翻译：根据本发明的原子层沉积方法提供了在基底上生产均质层的以下步骤。将基底引入反应室。将第一前体引入反应室，其中第一前体在基材的表面上反应形成中间产物。将第二前体引入反应室，该第二前体具有低粘附系数并与部分中间产物反应以形成第一产物。将第三前体引入反应室，该第三前体具有高粘附系数并与中间产物的剩余部分反应以形成第二产物。第二种前体及其第一种产物通过部分覆盖表面来降低第三种前体的有效粘附系数。

24. 发明申请

US20070141850A1 Wet Treatment of Hafnium Containing Materials 审中-公开
标题翻译：含铪材料的湿处理
公开(公告)号：US20070141850A1
公开(公告)日：2007-06-21
申请号：US11565227
申请日：2006-11-30
申请人： Audrey Dupont , Kristin Schupke , Stefan Jakschik , Alejandro Avellan
发明人： Audrey Dupont , Kristin Schupke , Stefan Jakschik , Alejandro Avellan
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/31111 , C09K13/08
摘要： A semiconductor product includes an exposed Hafnium-containing layer. The Hafnium-containing layer is treated with a solution that includes a low ionic strength organic substance.
摘要翻译：半导体产品包括暴露的含铪层。含铪层用包含低离子强度有机物质的溶液处理。

25. 发明授权

US07851297B2 Dual workfunction semiconductor device 有权
标题翻译：双功能半导体器件
公开(公告)号：US07851297B2
公开(公告)日：2010-12-14
申请号：US12145413
申请日：2008-06-24
申请人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
发明人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
IPC分类号： H01L21/8238
CPC分类号： H01L21/823835 , H01L21/823842 , H01L21/823871
摘要： A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
摘要翻译：一种双功能半导体器件，其包括第一和第二控制电极，所述第一和第二控制电极包括金属 - 半导体化合物，例如，硅化物或锗化物，以及由此获得的双功能半导体器件。一方面，该方法包括形成用于防止金属从第一控制电极的金属半导体化合物扩散到第二控制电极的金属半导体化合物的阻挡区域，该阻挡区域形成在界面在第一和第二控制电极之间形成或形成。通过防止金属从一个控制电极扩散到另一个控制电极，第一和第二控制电极的金属 - 半导体化合物的结构在例如电极中保持基本不变。进一步处理设备的热步骤。

26. 发明申请

US20100090264A1 INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件的互连结构
公开(公告)号：US20100090264A1
公开(公告)日：2010-04-15
申请号：US12249060
申请日：2008-10-10
申请人： Hans-Peter Moll , Gouri Sankar Kar , Martin Popp , Lars Heineck , Peter Lahnor , Arnd Scholz , Stefan Jakschik , Wolfgang Roesner , Gerhard Enders , Werner Graf , Peter Baars , Klaus Muemmler , Bernd Hintze , Andrei Josiek
发明人： Hans-Peter Moll , Gouri Sankar Kar , Martin Popp , Lars Heineck , Peter Lahnor , Arnd Scholz , Stefan Jakschik , Wolfgang Roesner , Gerhard Enders , Werner Graf , Peter Baars , Klaus Muemmler , Bernd Hintze , Andrei Josiek
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01L27/10891 , H01L27/10823 , H01L27/10876 , H01L27/10885
摘要： One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.
摘要翻译：一个实施例涉及形成在半导体主体上的集成电路，其具有在第一和第二晶体管的源/漏区之间的互连。互连件包括布置在半导体本体表面下方的金属体。接触元件建立金属体与第一和第二晶体管的源/漏区之间的电接触。接触元件沿着第一和第二晶体管的源极/漏极区域之间的连接路径延伸。还公开了其它方法，装置和系统。

27. 发明申请

US20090020821A1 DUAL WORKFUNCTION SEMICONDUCTOR DEVICE 有权
标题翻译：双功能半导体器件
公开(公告)号：US20090020821A1
公开(公告)日：2009-01-22
申请号：US12145413
申请日：2008-06-24
申请人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
发明人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
IPC分类号： H01L21/8238 , H01L27/092
CPC分类号： H01L21/823835 , H01L21/823842 , H01L21/823871
摘要： A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
摘要翻译：一种双功能半导体器件，其包括第一和第二控制电极，所述第一和第二控制电极包括金属 - 半导体化合物，例如，硅化物或锗化物，以及由此获得的双功能半导体器件。一方面，该方法包括形成用于防止金属从第一控制电极的金属半导体化合物扩散到第二控制电极的金属半导体化合物的阻挡区域，该阻挡区域形成在界面在第一和第二控制电极之间形成或形成。通过防止金属从一个控制电极扩散到另一个控制电极，第一和第二控制电极的金属 - 半导体化合物的结构在例如电极中保持基本不变。进一步处理设备的热步骤。

28. 发明授权

US07413951B2 Stacked capacitor and method for producing stacked capacitors for dynamic memory cells 失效
标题翻译：叠层电容器和用于制造用于动态存储单元的叠层电容器的方法
公开(公告)号：US07413951B2
公开(公告)日：2008-08-19
申请号：US11518504
申请日：2006-09-07
申请人： Stephan Kudelka , Peter Moll , Stefan Jakschik , Odo Wunnicke
发明人： Stephan Kudelka , Peter Moll , Stefan Jakschik , Odo Wunnicke
IPC分类号： H01L21/8242
CPC分类号： H01L28/90 , H01L27/10814 , H01L27/10852
摘要： A method produces stacked capacitors for dynamic memory cells, in which a number of trenches (48) are formed in the masking layer (40), each trench (48) being arranged above a respective contact plug (26) and extending from the top (42) of the masking layer (40) to the contact plugs (26). A conductive layer (50) covers the side walls (49) of the trenches (48) and the contact plugs (26) in order to form a first electrode (60) of a stacked capacitor (12). In an upper region (63), which is remote from the contact stack (26), the conductive layer (50) is replaced by an insulating layer, so that it is not possible for a short circuit to arise in the event of any adhesion between adjacent electrodes.
摘要翻译：一种方法产生用于动态存储单元的堆叠电容器，其中在掩模层（40）中形成有多个沟槽（48），每个沟槽（48）布置在相应的接触插塞（26）的上方并从顶部屏蔽层（40）的至少部分（42）连接到接触插塞（26）。为了形成叠层电容器（12）的第一电极（60），导电层（50）覆盖沟槽（48）的侧壁（49）和接触插塞（26）。在远离接触堆叠（26）的上部区域（63）中，导电层（50）由绝缘层代替，使得在任何粘附的情况下不可能出现短路在相邻电极之间。

29. 发明授权

US07045855B2 Semiconductor device and corresponding fabrication method 失效
标题翻译：半导体器件及相应的制造方法
公开(公告)号：US07045855B2
公开(公告)日：2006-05-16
申请号：US10777207
申请日：2004-02-13
申请人： Björn Fischer , Matthias Goldbach , Stefan Jakschik , Till Schlösser
发明人： Björn Fischer , Matthias Goldbach , Stefan Jakschik , Till Schlösser
IPC分类号： H01L29/792
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/31612 , H01L21/31616 , H01L27/10823 , H01L27/10826 , H01L27/10829 , H01L27/10838 , H01L27/1087 , H01L27/10873 , H01L27/10876 , H01L27/10879 , H01L28/56 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/66181 , H01L29/785
摘要： A semiconductor device having a gate structure, the gate structure having a first gate dielectric made of a first material having a first thickness and a first dielectric constant, which is situated directly above the channel region, and an overlying second gate dielectric made of a second material having a second thickness and a second dielectric constant, which is significantly greater than the first dielectric constant; and the first thickness of the first gate dielectric and the second thickness of the second gate dielectric being chosen such that the corresponding thickness of a gate structure with the first gate dielectric, to obtain the same threshold voltage, is at least of the same magnitude as a thickness equal to the sum of the first thickness and the second thickness. The invention also relates to a corresponding fabrication method.
摘要翻译：具有栅极结构的半导体器件，所述栅极结构具有由第一材料制成的第一栅极电介质，所述第一材料具有位于所述沟道区域正上方的第一厚度和第一介电常数，以及由第二栅极电介质构成的覆盖的第二栅极电介质材料具有明显大于第一介电常数的第二厚度和第二介电常数; 并且第一栅极电介质的第一厚度和第二栅极电介质的第二厚度被选择为使得具有第一栅极电介质的栅极结构的相应厚度以获得相同的阈值电压至少与厚度等于第一厚度和第二厚度之和的厚度。本发明还涉及相应的制造方法。

30. 发明授权

US08445963B2 Multi-gate semiconductor devices with improved carrier mobility 有权
标题翻译：具有改善的载流子迁移率的多栅极半导体器件
公开(公告)号：US08445963B2
公开(公告)日：2013-05-21
申请号：US12950977
申请日：2010-11-19
申请人： Stefan Jakschik , Nadine Collaert
发明人： Stefan Jakschik , Nadine Collaert
IPC分类号： H01L27/12
CPC分类号： H01L29/78696 , H01L21/823807 , H01L21/823828 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L27/1207 , H01L29/045 , H01L29/66787 , H01L29/78684
摘要： A multi-gate device is disclosed. In one aspect, the device includes a substrate having a first semiconductor layer of a first carrier mobility enhancing parameter, a buried insulating layer, and a second semiconductor layer with a second carrier mobility enhancing parameter. The device also includes a first active region electrically isolated from a second active region in the substrate. The first active region has a first fin grown on the first semiconductor layer and having the first mobility enhancing parameter. The second active region has a second fin grown on the second semiconductor layer and having the second mobility enhancing parameter. The device also includes a dielectric layer over the second semiconductor layer which is located between the first fin and the second fin. The first and second fins protrude through and above the dielectric layer.
摘要翻译：公开了一种多栅极器件。一方面，该器件包括具有第一载流子迁移率增强参数的第一半导体层，掩埋绝缘层和具有第二载流子迁移率增强参数的第二半导体层的衬底。该器件还包括与衬底中的第二有源区电隔离的第一有源区。第一有源区具有在第一半导体层上生长并具有第一迁移率增强参数的第一鳍。第二有源区具有在第二半导体层上生长并具有第二迁移率增强参数的第二鳍。该器件还包括位于第一鳍片和第二鳍片之间的位于第二半导体层上的电介质层。第一和第二散热片突出穿过介电层的上方。

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