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21. 发明公开

EP1461810A1 A METHOD FOR READING A PASSIVE MATRIX-ADDRESSABLE DEVICE AND A DEVICE FOR PERFORMING THE METHOD 有权
标题翻译：方法用于读取无源矩阵设备和设备用于实施过程
公开(公告)号：EP1461810A1
公开(公告)日：2004-09-29
申请号：EP02780189.3
申请日：2002-10-29
申请人： Thin Film Electronics ASA
发明人： BRÖMS, Per , KARLSSON, Christer
IPC分类号： G11C11/22 , G11C7/10 , G11C8/18
CPC分类号： G11C11/22
摘要： In a method for reading of a passive matrix-addressable device, particularly a memory device or a sensor device with individually addressable cells of a polarizable material, the cells store data in the form of one of two polarization states +Pr;-Pr in each cell, and the polarization states in the cells are written and read by addressing via electrodes which form word and bit lines (WL;BL) in an orthogonal electrode matrix, and wherein the cells are provided in or at the crossings between the word and bit lines (WL;BL) a voltage pulse protocol is used according to which electric potentials on all word and bit lines are controlled coordinated in time. During reading a word line (WL) is activated by applying voltage which relative to the potential on all crossing bit lines (BL) corresponds to the voltage VS and data stored in the cells connected to this active word line (AWL) are determined by detecting the charge values of the cells in a detection means (SA). In a device for performing the method electric potentialson all word and bit lines (WL;BL) are controlled coordinated in time by therewith connected control means which implements the voltage pulse protocol. - Use in passive matrix-addressable memory and sensor devices.

22. 发明公开

EP3281155A1 SENSOR-BASED NFC/RF MECHANISM WITH MULTIPLE VALID STATES FOR DETECTING AN OPEN OR COMPROMISED CONTAINER 审中-公开
标题翻译：基于传感器的NFC / RF机制，具有多种有效状态，用于检测开放或压缩的集装箱
公开(公告)号：EP3281155A1
公开(公告)日：2018-02-14
申请号：EP16780498.8
申请日：2016-04-08
申请人： Thin Film Electronics ASA
发明人： BRIGHT, Matthew, A. , ERNST, Jennifer , KARLSSON, Christer , HERLOGSSON, Lars
IPC分类号： G06K19/077 , B65D5/43 , B65D27/30
CPC分类号： G06Q30/018 , G01M3/187 , G01N33/0075 , G06Q30/0185 , G06Q30/0601 , H04Q9/00 , H04Q2209/47
摘要： A wireless (e.g., near field or RF) communication device, and methods of manufacturing and using the same are disclosed. The wireless communication device includes a receiver and/or transmitter, a substrate with an antenna thereon, an integrated circuit, and one or more continuity sensors. The antenna receives and/or transmits or broadcasts a wireless signal. The integrated circuit processes the wireless signal and/or information therefrom, and/or generates the wireless signal and/or information therefor. The continuity sensor(s) are configured to sense or determine the presence of a chemical or substance in the package or container, and thus a continuity state of a package or container on which the communication device is placed or to which the communication device is fixed or adhered. The continuity sensor(s) are electrically connected to a set of terminals of the integrated circuit different from the set of terminals to which the antenna is electrically connected.

23. 发明授权

EP1797564B1 READ METHOD AND SENSING DEVICE 有权
标题翻译：读法再现装置
公开(公告)号：EP1797564B1
公开(公告)日：2013-12-25
申请号：EP05784116.5
申请日：2005-09-21
申请人： Thin Film Electronics ASA
发明人： KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/062

24. 发明授权

EP1891583B1 A DATA STORAGE DEVICE 失效转让
标题翻译：数据存储设备
公开(公告)号：EP1891583B1
公开(公告)日：2011-09-21
申请号：EP06747668.9
申请日：2006-06-08
申请人： Thin Film Electronics ASA
发明人： BRÖMS, Per , KARLSSON, Christer , LEISTAD, Geirr, I. , GUDESEN, Hans Gude , HAMBERG. Per , BJÖRKLID, Staffan , CARLSSON, Johan , GUSTAFSSON, Göran
IPC分类号： G06K19/067 , G06K1/12 , G06K7/06 , G06K19/06 , G06K7/08 , G11B9/00 , G11C11/22
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

25. 发明公开

EP1891583A1 A DATA STORAGE DEVICE 失效转让
标题翻译：数据存储设备
公开(公告)号：EP1891583A1
公开(公告)日：2008-02-27
申请号：EP06747668.9
申请日：2006-06-08
申请人： Thin Film Electronics ASA
发明人： BRÖMS, Per , KARLSSON, Christer , LEISTAD, Geirr, I. , GUDESEN, Hans Gude , HAMBERG. Per , BJÖRKLID, Staffan , CARLSSON, Johan , GUSTAFSSON, Göran
IPC分类号： G06K19/067 , G06K1/12 , G06K7/06 , G06K19/06 , G06K7/08
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，存储器单元和读/写单元被设置为物理上分离的单元。存储器单元基于存储器材料，该存储器材料可以通过在存储器材料上施加电场而被设置为至少两个不同的物理状态。电极装置和/或接触装置或者设置在存储单元中或者设置在读/写单元中，并且接触装置至少总是设置在读/写单元中。电极和触点以几何布置提供，其在存储层中几何限定一个或多个存储单元。读/写单元中的接触装置被提供为可连接到位于读/写单元中或与其连接的外部装置中的驱动，感测和控制装置。在存储器单元和读取/写入单元之间建立物理接触关闭所寻址的存储器单元上的电路，使得可以实现读取，写入或擦除操作。存储器单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可辨别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定通过施加电场的电阻值。

26. 发明授权

EP2740122B1 SHORT CIRCUIT REDUCTION IN AN ELECTRONIC COMPONENT COMPRISING A STACK OF LAYERS ARRANGED ON A FLEXIBLE SUBSTRATE 失效
标题翻译：短时间，在电子元件具有灵活的在配置基材层堆栈
公开(公告)号：EP2740122B1
公开(公告)日：2016-08-31
申请号：EP12730477.2
申请日：2012-06-21
申请人： Thin Film Electronics ASA
发明人： KARLSSON, Christer , HAGEL, Olle, Jonny , NILSSON, Jakob , BRÖMS, Per
IPC分类号： G11B9/02 , H01L27/28 , H01L27/115 , G11C13/00 , G11C11/56
CPC分类号： G11C11/22 , G11C13/0014 , G11C13/0016 , G11C2213/51 , G11C2213/55 , G11C2213/77 , G11C2213/80 , H01L27/285 , H01L51/0516 , H01L51/0575 , Y10T29/49155
摘要： An electronic component (1) and an electronic device (100) comprising one or more such components (1). The electronic component (1) comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one insulating or semi-insulating layer (7) between said electrodes. The stack further comprises a buffer layer (13), arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (”L) occurring in the protective layer (11) and thus preventing said dimensional change (”L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.

27. 发明授权

EP1690260B1 METHOD FOR OPERATING A DATA STORAGE APPARATUS EMPLOYING PASSIVE MATRIX ADDRESSING 有权
标题翻译：用于操作数据存储设备，使用被动矩阵寻址
公开(公告)号：EP1690260B1
公开(公告)日：2009-02-18
申请号：EP04808855.3
申请日：2004-11-24
申请人： Thin Film Electronics ASA
发明人： HAMBERG, Per , KARLSSON, Christer , NORDAL, Per-Erik , OJAKANGAS, Nicklas , CARLSSON, Johan , GUDESEN, Hans, Gude
IPC分类号： G11C8/06 , G11C8/18 , G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.

28. 发明公开

EP1797564A1 READ METHOD AND SENSING DEVICE 有权
标题翻译：读法再现装置
公开(公告)号：EP1797564A1
公开(公告)日：2007-06-20
申请号：EP05784116.5
申请日：2005-09-21
申请人： Thin Film Electronics ASA
发明人： KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/062
摘要： In a method for reading the memory cell in a passive matrix-addressable ferroelectric or electret memory array with memory cells in the form of ferroelectric or electret capacitors, sensing means connected to the bit line of memory cell is activated in order to initiate a charge measurement and a first charge value is registered, whereafter a switching voltage is applied to the memory cell and a second charge value is registered. A readout value is obtained by subtracting the first charge value from the second charge value. A sensing device for performing the method of the invention comprises a first amplifier stage (Al) with an integrator circuit (715) and connected with a second amplifier stage (A2) following the first amplifier stage and with an integrator circuit (725), and a sampling capacitor (720) connected between an output (716) of the first amplifier stage (Al) and an input (722) of the second amplifier stage (A2).

29. 发明授权

EP1497730B1 METHODS FOR STORING DATA IN NON-VOLATILE MEMORIES 有权
标题翻译：方法在非易失性存储器中存储数据
公开(公告)号：EP1497730B1
公开(公告)日：2006-06-28
申请号：EP03723535.5
申请日：2003-04-10
申请人： Thin Film Electronics ASA
发明人： TORJUSSEN, Lars, Sundell , KARLSSON, Christer
IPC分类号： G06F11/16 , G06F12/16
CPC分类号： G06F11/08 , G11C11/22 , G11C29/74
摘要： In methods for storing data in a non-volatile ferroelectric random access memory wherein destructive readout operations are followed by rewrite operations, identical copies of the data are stored in different memory locations that do not have any common word lines or alternative neither common word lines nor common bit lines. A first word line or a segment of a first word line is read in its entirety, said word line or said segment comprising at least a first copy of the identical copies of data. The data thus read are rewritten to the memory location and in addition transferred from the memory location in question to an appropriate cache location, whereafter subsequent memory locations either in the form of word lines or segments thereof are read, and data rewritten to the cache location. The operation is repeated until all identical copies of the data have been transferred to the cache storage. Subsequently bit errors are detected by comparing the identical copies in a memory control logic circuit, which also may be used for caching readout data copies or alternatively be connected with a separate cache memory. Corrected data are written back to the appropriate memory locations holding bit errors when the latter have been detected.

30. 发明公开

EP1497730A1 METHODS FOR STORING DATA IN NON-VOLATILE MEMORIES 有权
标题翻译：方法在非易失性存储器中存储数据
公开(公告)号：EP1497730A1
公开(公告)日：2005-01-19
申请号：EP03723535.5
申请日：2003-04-10
申请人： Thin Film Electronics ASA
发明人： TORJUSSEN, Lars, Sundell , KARLSSON, Christer
IPC分类号： G06F11/16 , G06F12/16
CPC分类号： G06F11/08 , G11C11/22 , G11C29/74
摘要： In methods for storing data in a non-volatile ferroelectric random access memory wherein destructive readout operations are followed by rewrite operations, identical copies of the data are stored in different memory locations that do not have any common word lines or alternative neither common word lines nor common bit lines. A first word line or a segment of a first word line is read in its entirety, said word line or said segment comprising at least a first copy of the identical copies of data. The data thus read are rewritten to the memory location and in addition transferred from the memory location in question to an appropriate cache location, whereafter subsequent memory locations either in the form of word lines or segments thereof are read, and data rewritten to the cache location. The operation is repeated until all identical copies of the data have been transferred to the cache storage. Subsequently bit errors are detected by comparing the identical copies in a memory control logic circuit, which also may be used for caching readout data copies or alternatively be connected with a separate cache memory. Corrected data are written back to the appropriate memory locations holding bit errors when the latter have been detected.

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