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1. 发明申请

WO2006033581A1 READ METHOD AND SENSING DEVICE 审中-公开
标题翻译：读取方法和传感设备
公开(公告)号：WO2006033581A1
公开(公告)日：2006-03-30
申请号：PCT/NO2005/000347
申请日：2005-09-21
申请人： THIN FILM ELECTRONICS ASA , KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
发明人： KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/062
摘要： In a method for reading the memory cell in a passive matrix-addressable ferroelectric or electret memory array with memory cells in the form of ferroelectric or electret capacitors, sensing means connected to the bit line of memory cell is activated in order to initiate a charge measurement and a first charge value is registered, whereafter a switching voltage is applied to the memory cell and a second charge value is registered. A readout value is obtained by subtracting the first charge value from the second charge value. A sensing device for performing the method of the invention comprises a first amplifier stage (Al) with an integrator circuit (715) and connected with a second amplifier stage (A2) following the first amplifier stage and with an integrator circuit (725), and a sampling capacitor (720) connected between an output (716) of the first amplifier stage (Al) and an input (722) of the second amplifier stage (A2).
摘要翻译：在用于以具有铁电或驻极体电容器形式的存储单元读取无源矩阵可寻址铁电或驻极体存储器阵列中的存储单元的方法中，连接到存储单元的位线的感测装置是激活以启动电荷测量并记录第一电荷值，随后将切换电压施加到存储器单元并记录第二电荷值。通过从第二电荷值中减去第一电荷值来获得读出值。用于执行本发明的方法的感测装置包括具有积分器电路（715）并且与第一放大器级之后的第二放大器级（A2）和积分器电路（725）连接的第一放大器级（A1），以及连接在第一放大器级（A1）的输出（716）和第二放大器级（A2）的输入（722）之间的采样电容器（720）。

2. 发明授权

EP1797564B1 READ METHOD AND SENSING DEVICE 有权
标题翻译：读法再现装置
公开(公告)号：EP1797564B1
公开(公告)日：2013-12-25
申请号：EP05784116.5
申请日：2005-09-21
申请人： Thin Film Electronics ASA
发明人： KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/062

3. 发明公开

EP1797564A1 READ METHOD AND SENSING DEVICE 有权
标题翻译：读法再现装置
公开(公告)号：EP1797564A1
公开(公告)日：2007-06-20
申请号：EP05784116.5
申请日：2005-09-21
申请人： Thin Film Electronics ASA
发明人： KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/062
摘要： In a method for reading the memory cell in a passive matrix-addressable ferroelectric or electret memory array with memory cells in the form of ferroelectric or electret capacitors, sensing means connected to the bit line of memory cell is activated in order to initiate a charge measurement and a first charge value is registered, whereafter a switching voltage is applied to the memory cell and a second charge value is registered. A readout value is obtained by subtracting the first charge value from the second charge value. A sensing device for performing the method of the invention comprises a first amplifier stage (Al) with an integrator circuit (715) and connected with a second amplifier stage (A2) following the first amplifier stage and with an integrator circuit (725), and a sampling capacitor (720) connected between an output (716) of the first amplifier stage (Al) and an input (722) of the second amplifier stage (A2).

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