专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07934388B2 Indoor unit of air conditioner 有权
标题翻译：室内机组
公开(公告)号：US07934388B2
公开(公告)日：2011-05-03
申请号：US12095107
申请日：2006-11-21
申请人： Masanao Yasutomi , Masayuki Kojima , Masuzou Takahashi , Toshihiro Wakamatsu
发明人： Masanao Yasutomi , Masayuki Kojima , Masuzou Takahashi , Toshihiro Wakamatsu
IPC分类号： F25D21/14
CPC分类号： F24F1/0007 , F24F1/0025 , F24F13/222
摘要： Grooves are formed on a back surface 22 of a tongue part 21 of a rear plate 3 which surface does not guide a flow of air.
摘要翻译：凹槽形成在后板3的舌部21的后表面22上，该表面不引导空气流。

22. 发明授权

US06833331B2 Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen 失效
标题翻译：具有由含有硅，氧和氢的聚合物的液体物质形成的绝缘膜的半导体集成电路器件的制造方法
公开(公告)号：US06833331B2
公开(公告)日：2004-12-21
申请号：US10303935
申请日：2002-11-26
申请人： Masayoshi Saito , Katsuhiko Hotta , Masayoshi Hirasawa , Masayuki Kojima , Hiroyuki Uchiyama , Hiroyuki Maruyama , Takuya Fukuda
发明人： Masayoshi Saito , Katsuhiko Hotta , Masayoshi Hirasawa , Masayuki Kojima , Hiroyuki Uchiyama , Hiroyuki Maruyama , Takuya Fukuda
IPC分类号： H01L2131
CPC分类号： H01L21/3124 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3125 , H01L21/76802 , H01L21/76814 , H01L21/76816 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L27/10814 , H01L27/10894
摘要： An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800° C. is used as a planarized insulating film to be formed on the gate electrode (9; see FIGS. 31 and 32) of a MISFET (Qs, Qn, Qp) A polysilazan SOG film (57) not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).
摘要翻译：使用通过在约800℃的高温下热处理聚硅氮烷型SOG膜获得的SOG膜16作为形成在MISFET的栅极（9;参见图31和32）上的平坦化绝缘膜）（Qs，Qn，Qp）将不进行这种热处理的聚硅氮烷SOG膜（57）用作布置在上布线层（54,55,56,62,63）中的层间绝缘膜。

23. 发明授权

US06562695B1 Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing 有权
标题翻译：半导体集成电路器件及其制造方法涉及使用圆形加工的浅槽隔离的缩小宽度
公开(公告)号：US06562695B1
公开(公告)日：2003-05-13
申请号：US09889018
申请日：2001-07-10
申请人： Norio Suzuki , Hiroyuki Ichizoe , Masayuki Kojima , Keiji Okamoto , Shinichi Horibe , Kozo Watanabe , Yasuko Yoshida , Shuji Ikeda , Akira Takamatsu , Norio Ishitsuka , Atsushi Ogishima , Maki Shimoda
发明人： Norio Suzuki , Hiroyuki Ichizoe , Masayuki Kojima , Keiji Okamoto , Shinichi Horibe , Kozo Watanabe , Yasuko Yoshida , Shuji Ikeda , Akira Takamatsu , Norio Ishitsuka , Atsushi Ogishima , Maki Shimoda
IPC分类号： H01L2176
CPC分类号： H01L21/76229 , H01L21/76224 , H01L21/76232 , H01L27/10852 , H01L28/91
摘要： Grooves are defined in a substrate having device isolation regions by dry etching using silicon nitride films and side wall spacers as masks. Thereafter, the side wall spacers lying on side walls of the silicon nitride films are removed and the substrate is subjected to thermal oxidation, whereby the surface of the substrate at a peripheral portion of each active region is subjected to so-called round processing so as to have a sectional shape having a convex rounded shape.
摘要翻译：通过使用氮化硅膜和侧壁间隔物作为掩模的干蚀刻将沟槽限定在具有器件隔离区的衬底中。此后，除去位于氮化硅膜侧壁上的侧壁隔离物，并对衬底进行热氧化，由此在每个有源区的周边部分的衬底表面进行所谓的圆形处理，以便具有凸形圆形的截面形状。

24. 发明授权

US06512245B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US06512245B2
公开(公告)日：2003-01-28
申请号：US09859045
申请日：2001-05-17
申请人： Shuji Ikeda , Satoshi Meguro , Kyoichiro Asayama , Eri Fujita , Koichiro Ishibashi , Toshiro Aoto , Sadayuki Morita , Atsuyoshi Koike , Masayuki Kojima , Yasuo Kiguchi , Kazuyuki Suko , Fumiyuki Kanai , Naotaka Hashimoto , Toshiaki Yamanaka
发明人： Shuji Ikeda , Satoshi Meguro , Kyoichiro Asayama , Eri Fujita , Koichiro Ishibashi , Toshiro Aoto , Sadayuki Morita , Atsuyoshi Koike , Masayuki Kojima , Yasuo Kiguchi , Kazuyuki Suko , Fumiyuki Kanai , Naotaka Hashimoto , Toshiaki Yamanaka
IPC分类号： H01L2972
CPC分类号： H01L27/11 , H01L27/1104 , Y10S257/903 , Y10S257/904
摘要： A static random access memory comprising memory cells each composed of transfer MISFETs controlled by word lines and of a flip-flop circuit made of driver MISFETs and load MISFETs. The top of the load MISFETs is covered with supply voltage lines so that capacitor elements of a stacked structure are formed between the gate electrodes of the load MISFETs and the supply voltage lines.
摘要翻译：一种静态随机存取存储器，包括由字线控制的转移MISFET和由驱动器MISFET和负载MISFET构成的触发电路组成的存储单元。负载MISFET的顶部覆盖有电源电压线，使得层叠结构的电容器元件形成在负载MISFET的栅电极和电源电压线之间。

25. 发明授权

US06132180A Automatic pumping apparatus utilizing wave motion 失效
标题翻译：自动抽水装置利用波浪运动
公开(公告)号：US06132180A
公开(公告)日：2000-10-17
申请号：US949395
申请日：1997-10-14
申请人： Masayuki Kojima
发明人： Masayuki Kojima
IPC分类号： F03B13/18 , F04B17/00
CPC分类号： F03B13/185 , Y02E10/38
摘要： An automatic pumping apparatus utilizing wave motion comprises one or more than one sink-and-float members provided so as to move up and down in accordance with a wave motion, positioned below the respective sink-and-float members, connected to the respective sink-and-float members via a transmission mechanism and adapted to slidingly move in respective one-end-open fixed cylinders in accordance with the up and down movement of the sink-and-float members, the horizontal cross sectional area of each piston being made small relative to that of each sink-and-float member and inversely proportional to the pumping height, whereby water can be pumped to a reservoir tank through pumping pipes extending from the other ends of the cylinders to positions higher than the ranges of up and down movements of the sinkand-float members by the operations of pistons.
摘要翻译：使用波浪运动的自动泵送装置包括一个或多个沉浮浮子，其设置成根据波形运动上下移动，该波形位于相应的沉浮浮子构件下方，连接到相应的水槽并且通过传动机构浮动构件，并且适于根据沉浮浮子构件的上下运动在相应的一端开式固定气缸中滑动移动，每个活塞的水平横截面积被制成相对于每个沉浮物和浮子构件的尺寸小，并且与泵送高度成反比，由此可以通过从气缸的另一端延伸的管道将水泵送到储存罐中，使其高于上下范围的位置通过活塞的操作使下沉和浮动构件的运动。

26. 发明授权

US5917211A Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same 失效
标题翻译：半导体集成电路及其制造方法及其制造装置
公开(公告)号：US5917211A
公开(公告)日：1999-06-29
申请号：US979543
申请日：1997-11-25
申请人： Jun Murata , Yoshitaka Tadaki , Hiroko Kaneko , Toshihiro Sekiguchi , Hiroyuki Uchiyama , Hisashi Nakamura , Toshio Maeda , Osamu Kasahara , Hiromichi Enami , Atsushi Ogishima , Masaki Nagao , Michimasa Funabashi , Yasuo Kiguchi , Masayuki Kojima , Atsuyoshi Koike , Hiroyuki Miyazawa , Masato Sadaoka , Kazuya Kadota , Tadashi Chikahara , Kazuo Nojiri , Yutaka Kobayashi
发明人： Jun Murata , Yoshitaka Tadaki , Hiroko Kaneko , Toshihiro Sekiguchi , Hiroyuki Uchiyama , Hisashi Nakamura , Toshio Maeda , Osamu Kasahara , Hiromichi Enami , Atsushi Ogishima , Masaki Nagao , Michimasa Funabashi , Yasuo Kiguchi , Masayuki Kojima , Atsuyoshi Koike , Hiroyuki Miyazawa , Masato Sadaoka , Kazuya Kadota , Tadashi Chikahara , Kazuo Nojiri , Yutaka Kobayashi
IPC分类号： H01L21/8234 , H01L27/105 , H01L27/08 , H01L29/76 , H01L29/94
CPC分类号： H01L27/105 , H01L21/823425
摘要： A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.
摘要翻译：一种半导体集成电路，包括构成存储系统的存储单元的第一n沟道MISFET，构成存储系统的外围电路的第二n沟道MISFET和构成外围电路中的输出电路的第三n沟道MISFET。当这些MISFET的各个栅极长度基本相同时，第一n沟道MISFET，第二n沟道MISFET和第三n沟道MISFET的阈值电压依次减小。

27. 发明授权

US5803386A Film cartridge case 失效
标题翻译：胶卷盒
公开(公告)号：US5803386A
公开(公告)日：1998-09-08
申请号：US711881
申请日：1996-09-12
申请人： Keigo Arimoto , Masayuki Kojima , Hisashi Negoro , Takuya Yamamoto
发明人： Keigo Arimoto , Masayuki Kojima , Hisashi Negoro , Takuya Yamamoto
IPC分类号： G03D13/00 , G03B1/56
CPC分类号： G03D13/003
摘要： A film cartridge case which holds and carries therein a group of film cartridges for feeding sheets of undeveloped film loaded in their respective film cartridges to the development unit of an automatic photographic film development processor apparatus includes a plurality of cartridge pockets. Each pocket has a mispositioning preventing projection provided on one side of an inner wall thereof for engaging with a barcode readout window in the film cartridge upon the film cartridge being placed in the cartridge pocket in a correct orientation. The case includes holding members for detachably holding the film cartridges in their respective cartridge pockets. A conveyor element is arranged to be engaged by a conveying device. Film sheets can be loaded to and unloaded from respective film cartridges installed in the cartridge pockets.
摘要翻译：保存并携带一组胶片暗盒的暗盒盒，该暗盒用于将装载在其各自胶片暗盒中的未显影胶片的片材送入自动摄影胶片显影处理器装置的显影单元，包括多个暗盒凹口。每个口袋具有设置在其内壁的一侧上的错位防止突起，用于与胶片暗盒中的条形码读取窗口接合，而胶片暗盒以正确的方向放置在盒式存储器中。壳体包括用于将胶片盒可拆卸地保持在它们各自的盒口中的保持构件。传送器元件布置成由输送装置接合。胶片片可以装载到安装在墨盒袋中的各个暗盒中并从其卸载。

28. 发明授权

US5766498A Anisotropic etching method and apparatus 失效
公开(公告)号：US5766498A
公开(公告)日：1998-06-16
申请号：US623737
申请日：1996-03-29
申请人： Masayuki Kojima , Yoshikazu Ito , Kazushi Tomita , Shigeki Tozawa , Shunichi Iimuro , Masashi Arasawa , Eiichi Nishimura
发明人： Masayuki Kojima , Yoshikazu Ito , Kazushi Tomita , Shigeki Tozawa , Shunichi Iimuro , Masashi Arasawa , Eiichi Nishimura
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32522 , H01J37/32532 , H01J37/32541 , H01J37/32724 , H01J2237/3345
摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

29. 发明授权

US5678113A Automatic film processing apparatus 失效
标题翻译：自动胶片处理设备
公开(公告)号：US5678113A
公开(公告)日：1997-10-14
申请号：US729026
申请日：1996-10-10
申请人： Masayuki Kojima
发明人： Masayuki Kojima
IPC分类号： G03D13/00 , G03D3/08 , G03D13/08
CPC分类号： G03D13/003
摘要： An automatic film processing apparatus includes a detector plate which is projected upward when cartridges are placed in cartridge case in an adverse manner. Limit switches detect the upward displacement of the detector plate and present a warning signal to an operator.
摘要翻译：一种自动胶片处理装置，包括当墨盒以不利的方式放置在墨盒壳体中时向上突出的检测器板。限位开关检测检测器板的向上位移并向操作者发出警告信号。

30. 发明授权

US5578200A Sewage treatment system 失效
标题翻译：污水处理系统
公开(公告)号：US5578200A
公开(公告)日：1996-11-26
申请号：US501661
申请日：1995-07-12
申请人： Yasushi Funakoshi , Khoji Ogata , Masayuki Kojima , Hitoshi Kawaziri , Hirofumi Yamamoto , Kazuhiko Noto , Naomichi Mori
发明人： Yasushi Funakoshi , Khoji Ogata , Masayuki Kojima , Hitoshi Kawaziri , Hirofumi Yamamoto , Kazuhiko Noto , Naomichi Mori
IPC分类号： B01D21/00 , B01D21/01 , B01D21/02 , B01D24/16 , C02F3/06 , C02F3/10 , C02F3/30 , C02F9/00 , B01D17/12 , B01D35/05
CPC分类号： C02F9/00 , B01D21/0003 , B01D21/0006 , B01D21/0012 , B01D21/003 , B01D21/0036 , B01D21/0042 , B01D21/02 , B01D21/04 , B01D21/183 , B01D21/2427 , B01D21/2472 , B01D21/26 , B01D24/165 , C02F3/06 , C02F3/10 , C02F3/308 , B01D21/01 , B01D2201/14 , Y02W10/15
摘要： A sewage treatment system is provided for cleaning sewage by filtering solid components in the sewage through use of a floating filter medium, wherein the filtration performance can be improved and the filtration cleaning can be performed efficiently. The sewage flows upwardly in the treatment tank and is filtered through the floating filter media layer made of cylindrical mesh floating filter media which have a smaller specific gravity than the sewage. To wash the floating filter medium, air is jetted from the air jetting pipes to generate a circular flow to scape off solid components adhering to the filter medium. Then the waste, which has washed the floating filter medium is discharged to the outside of the treatment tank while the air is jetted from the air jetting pipe for full jetting of the floating filter media layer unidirectionally.
摘要翻译：提供污水处理系统，通过使用浮动过滤介质过滤污水中的固体成分来清洗污水，其中可以提高过滤性能，并且可以有效地进行过滤清洗。污水在处理槽中向上流动，并通过由比污水小的圆柱形网状浮动过滤介质制成的浮动过滤介质层过滤。为了洗涤浮动过滤介质，从空气喷射管喷射空气以产生圆形流动，以刮除附着在过滤介质上的固体成分。然后将漂浮的过滤介质洗涤的废物排出到处理槽的外部，同时从空气喷射管喷射空气，以单向完全喷射浮动过滤介质层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式