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21. 发明授权

US07557011B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07557011B2
公开(公告)日：2009-07-07
申请号：US11280250
申请日：2005-11-17
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L21/108 , H01L21/316 , H01L21/318
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
摘要翻译：半导体器件包括第一氢阻挡膜，形成在第一氢阻挡膜上的电容器器件和形成为覆盖电容器器件的第二氢阻挡膜。第一和第二氢阻挡膜每个含有至少一种常见类型的原子，用于允许第一和第二氢阻挡膜彼此粘附。

22. 发明申请

US20090014710A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：非易失性存储元件，非易失性存储器件及其制造方法
公开(公告)号：US20090014710A1
公开(公告)日：2009-01-15
申请号：US12281034
申请日：2007-03-06
申请人： Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
发明人： Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1658 , H01L45/1675
摘要： A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.
摘要翻译：设置下电极层2，形成在下电极层2上的上电极层4和形成在下电极层2和上电极层4之间的金属氧化物薄膜层3。金属氧化物薄膜层3包括第一区域3a，其第一区域3a的电阻值通过施加在下电极层2和上电极层4之间的电脉冲和围绕第一区域3a布置的第二区域3b而增大或减小，以及具有比第一区域3a更大的氧含量，其中下电极层2和上电极层4以及第一区域3a的至少一部分从第一区域的厚度方向观察而重叠 3a。

23. 发明授权

US07413949B2 Capacitor and method for fabricating the same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US07413949B2
公开(公告)日：2008-08-19
申请号：US11117328
申请日：2005-04-29
申请人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
发明人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
IPC分类号： H01L21/8242
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/43
摘要： A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.
摘要翻译：在形成在半导体衬底上的层间绝缘膜上形成电容器。电容器包括由铂制成的底部电极，由SrTaBiO（SBT）制成的电容器绝缘膜，其包含例如在晶界，晶格间位置或空穴中吸收钛的钛的元素，以及由铂制成的顶部电极。

24. 发明申请

US20060292816A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060292816A1
公开(公告)日：2006-12-28
申请号：US11415069
申请日：2006-05-02
申请人： Takumi Mikawa , Toru Nasu
发明人： Takumi Mikawa , Toru Nasu
IPC分类号： H01L21/20 , H01L29/00
CPC分类号： H01L28/55 , H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/91
摘要： A semiconductor device comprises: an insulating film formed over a semiconductor substrate and having a first recess; a plurality of capacitor elements each of which is composed of a capacitor lower electrode formed on wall and bottom portions of the first recess and having a second recess, a capacitor insulating film of a dielectric film formed on wall and bottom portions of the second recess and having a third recess, and a capacitor upper electrode formed on wall and bottom portions of the third recess; and a conductive layer (referred hereinafter to as a low-resistance conductive layer) which is formed to cover at least portions of the respective capacitor upper electrodes constituting the plurality of capacitor elements and to extend across the plurality of capacitor elements and which has a lower resistance than the capacitor upper electrode.
摘要翻译：半导体器件包括：形成在半导体衬底上并具有第一凹槽的绝缘膜; 多个电容器元件，每个电容器元件由形成在第一凹部的壁和底部上的电容器下电极组成，并具有第二凹部，形成在第二凹部的壁和底部上的电介质膜的电容绝缘膜，具有第三凹部和形成在第三凹部的壁部和底部上的电容器上电极; 以及形成为覆盖构成多个电容器元件的各个电容器上电极的至少一部分并且跨越多个电容器元件并且具有较低电容器元件的导电层（以下称为低电阻导电层）电阻比电容器上电极。

25. 发明授权

US06963095B2 Ferroelectric memory device and method for fabricating the same 有权
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06963095B2
公开(公告)日：2005-11-08
申请号：US10632931
申请日：2003-08-04
申请人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
发明人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
IPC分类号： H01L27/105 , H01L21/02 , H01L21/321 , H01L21/768 , H01L21/8246 , H01L27/115 , H01L29/72
CPC分类号： H01L28/65 , H01L21/3212 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： The ferroelectric memory device has a plurality of capacitor elements each formed on a semiconductor substrate and composed of a lower electrode, a capacitor insulating film made of a ferroelectric material formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. Each of the lower electrodes is buried in a burying insulating film to have an upper surface planarized relative to the upper surface of the burying insulating film and has a plane configuration such that the distance from an arbitrary position on the upper surface of the lower electrode to the nearest end portion thereof is 0.6 μm or less.
摘要翻译：铁电存储器件具有多个电容器元件，每个电容器元件形成在半导体衬底上，由下电极，形成在下电极上的铁电材料制成的电容器绝缘膜和形成在电容器绝缘膜上的上电极组成。每个下电极被埋在埋入绝缘膜中以使上表面相对于掩埋绝缘膜的上表面平坦化，并且具有平面构造，使得从下电极的上表面上的任意位置到下电极的距离其最接近的端部为0.6μm以下。

26. 发明授权

US06960800B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06960800B2
公开(公告)日：2005-11-01
申请号：US09734176
申请日：2000-12-12
申请人： Takumi Mikawa , Yuji Judai
发明人： Takumi Mikawa , Yuji Judai
IPC分类号： H01G4/12 , H01L21/02 , H01L21/203 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/76 , H01L23/48 , H01L23/52 , H01L29/00
CPC分类号： H01L28/55 , H01L28/60 , H01L28/75
摘要： A lower electrode is formed on a substrate, a capacitive insulating film is formed out of a ferroelectric film on the lower electrode, and an upper electrode is formed on the capacitive insulating film. A contact layer is formed on the upper electrode. The contact layer is either a single-layer film made of a metal oxide or a metal nitride or a multilayer structure made up of metal oxide and metal nitride films. An insulating film is formed to cover the lower electrode, capacitive insulating film, upper electrode and contact layer. A contact hole is opened through the insulating film and the contact layer to reach the upper electrode. A metal interconnect, which is filled in the contact hole and connected to the upper electrode, is formed on a part of the insulating film.
摘要翻译：在基板上形成下电极，在下电极上由铁电体膜形成电容绝缘膜，在电容绝缘膜上形成上电极。接触层形成在上电极上。接触层是由金属氧化物或金属氮化物制成的单层膜或由金属氧化物和金属氮化物膜构成的多层结构。形成绝缘膜以覆盖下电极，电容绝缘膜，上电极和接触层。通过绝缘膜和接触层打开接触孔以到达上电极。填充在接触孔中并连接到上电极的金属互连件形成在绝缘膜的一部分上。

27. 发明授权

US06958508B2 Ferroelectric memory having ferroelectric capacitor insulative film 有权
标题翻译：具有铁电电容器绝缘膜的铁电存储器
公开(公告)号：US06958508B2
公开(公告)日：2005-10-25
申请号：US09968948
申请日：2001-10-03
申请人： Takumi Mikawa
发明人： Takumi Mikawa
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8239 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L27/108
CPC分类号： H01L27/11509 , H01L21/28568 , H01L21/76895 , H01L27/105 , H01L27/1052 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A capacitor upper electrode and a wiring are electrically connected to each other by using a plug and a conductive layer formed below a capacitive element without using a plug that directly connects the capacitor upper electrode to the wiring provided thereon via an interlayer insulating film therebetween. Alternatively, the capacitor upper electrode is covered by a conductive hydrogen barrier film, and the capacitor upper electrode and the wiring are electrically connected to each other via both a plug connecting the wiring and the conductive hydrogen barrier film to each other and the conductive hydrogen barrier film.
摘要翻译：电容器上电极和布线通过使用形成在电容元件下方的插塞和导电层而彼此电连接，而不使用通过其间的层间绝缘膜将电容器上电极直接连接到设置在其上的布线的插头。或者，电容器上电极被导电氢阻挡膜覆盖，并且电容器上电极和布线通过将布线和导电氢阻挡膜彼此连接的插塞彼此电连接，并且导电氢屏障电影。

28. 发明申请

US20050082637A1 Dielectric memory and method for fabricating the same 审中-公开
标题翻译：介质记忆及其制造方法
公开(公告)号：US20050082637A1
公开(公告)日：2005-04-21
申请号：US10964703
申请日：2004-10-15
申请人： Takumi Mikawa , Eiji Fujii
发明人： Takumi Mikawa , Eiji Fujii
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L29/00
CPC分类号： H01L28/55 , H01L21/7687 , H01L28/56 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A semiconductor device is provided with an insulating film which is formed on a semiconductor substrate and has a first recess, a capacitor lower electrode which is formed on the walls and the bottom of the first recess and has a second recess, and a capacitor insulating film which is formed on the walls and the bottom of the second recess and has a third recess, and a capacitor upper electrode embedded in the third recess.
摘要翻译：半导体器件设置有绝缘膜，该绝缘膜形成在半导体衬底上并且具有第一凹部，形成在第一凹部的壁和底部上并具有第二凹部的电容器下电极，以及电容器绝缘膜其形成在第二凹部的壁和底部上，并且具有第三凹部，以及嵌入在第三凹部中的电容器上电极。

29. 发明申请

US20050041505A1 Ferroelectric memory and method for manufacturing the same 有权
公开(公告)号：US20050041505A1
公开(公告)日：2005-02-24
申请号：US10957618
申请日：2004-10-05
申请人： Takumi Mikawa
发明人： Takumi Mikawa
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8239 , H01L21/8246 , H01L27/105 , H01L27/115 , G11C7/00
CPC分类号： H01L27/11509 , H01L21/28568 , H01L21/76895 , H01L27/105 , H01L27/1052 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A capacitor upper electrode and a wiring are electrically connected to each other by using a plug and a conductive layer formed below a capacitive element without using a plug that directly connects the capacitor upper electrode to the wiring provided thereon via an interlayer insulating film therebetween. Alternatively, the capacitor upper electrode is covered by a conductive hydrogen barrier film, and the capacitor upper electrode and the wiring are electrically connected to each other via both a plug connecting the wiring and the conductive hydrogen barrier film to each other and the conductive hydrogen barrier film.

30. 发明授权

US06753566B2 Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride 有权
标题翻译：具有由复合氮化物形成的氧扩散阻挡层的半导体器件
公开(公告)号：US06753566B2
公开(公告)日：2004-06-22
申请号：US10441118
申请日：2003-05-20
申请人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
发明人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
摘要翻译：在半导体衬底中形成用作晶体管的源极或漏极的杂质扩散层，形成覆盖晶体管的保护绝缘膜。在保护绝缘膜上依次形成电容器下电极，氧化物电介质膜的电容电介质膜和电容器上电极。用于将晶体管的杂质扩散层电连接到电容器下电极的插头埋入保护绝缘膜中。在塞子和电容器下电极之间形成氧阻隔层。氧阻隔层由作为具有导电性的第一氮化物和具有绝缘性的第二氮化物的混合物或合金的复合氮化物制成。

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