专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050199928A1 Capacitor and method for fabricating the same 失效
公开(公告)号：US20050199928A1
公开(公告)日：2005-09-15
申请号：US11117328
申请日：2005-04-29
申请人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
发明人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
IPC分类号： H01L21/316 , H01L21/02 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L29/76 , H01L21/00
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/43
摘要： A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.

2. 发明授权

US07413949B2 Capacitor and method for fabricating the same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US07413949B2
公开(公告)日：2008-08-19
申请号：US11117328
申请日：2005-04-29
申请人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
发明人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
IPC分类号： H01L21/8242
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/43
摘要： A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.
摘要翻译：在形成在半导体衬底上的层间绝缘膜上形成电容器。电容器包括由铂制成的底部电极，由SrTaBiO（SBT）制成的电容器绝缘膜，其包含例如在晶界，晶格间位置或空穴中吸收钛的钛的元素，以及由铂制成的顶部电极。

3. 发明授权

US06753566B2 Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride 有权
标题翻译：具有由复合氮化物形成的氧扩散阻挡层的半导体器件
公开(公告)号：US06753566B2
公开(公告)日：2004-06-22
申请号：US10441118
申请日：2003-05-20
申请人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
发明人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
摘要翻译：在半导体衬底中形成用作晶体管的源极或漏极的杂质扩散层，形成覆盖晶体管的保护绝缘膜。在保护绝缘膜上依次形成电容器下电极，氧化物电介质膜的电容电介质膜和电容器上电极。用于将晶体管的杂质扩散层电连接到电容器下电极的插头埋入保护绝缘膜中。在塞子和电容器下电极之间形成氧阻隔层。氧阻隔层由作为具有导电性的第一氮化物和具有绝缘性的第二氮化物的混合物或合金的复合氮化物制成。

4. 发明授权

US06891715B2 Capacitor and method for fabricating the same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US06891715B2
公开(公告)日：2005-05-10
申请号：US10607313
申请日：2003-06-27
申请人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
发明人： Takumi Mikawa , Yuji Judai , Shinichiro Hayashi
IPC分类号： H01L21/316 , H01L21/02 , H01L21/8246 , H01L27/105 , H01L27/108 , H01G4/06
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/43
摘要： A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.
摘要翻译：在形成在半导体衬底上的层间绝缘膜上形成电容器。电容器包括由铂制成的底部电极，由SrTaBiO（SBT）制成的电容器绝缘膜，其包含例如在晶界，晶格间位置或空穴中吸收钛的钛的元素，以及由铂制成的顶部电极。

5. 发明授权

US06723637B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06723637B2
公开(公告)日：2004-04-20
申请号：US10441128
申请日：2003-05-20
申请人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
发明人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
IPC分类号： H01L214763
CPC分类号： H01L28/55
摘要： An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
摘要翻译：在半导体衬底中形成用作晶体管的源极或漏极的杂质扩散层，形成覆盖晶体管的保护绝缘膜。在保护绝缘膜上依次形成电容器下电极，氧化物电介质膜的电容电介质膜和电容器上电极。用于将晶体管的杂质扩散层电连接到电容器下电极的插头埋入保护绝缘膜中。在塞子和电容器下电极之间形成氧阻隔层。氧阻隔层由作为具有导电性的第一氮化物和具有绝缘性的第二氮化物的混合物或合金的复合氮化物制成。

6. 发明授权

US06590252B2 Semiconductor device with oxygen diffusion barrier layer termed from composite nitride 有权
标题翻译：具有氧复合氮化物的氧扩散阻挡层的半导体器件
公开(公告)号：US06590252B2
公开(公告)日：2003-07-08
申请号：US09921884
申请日：2001-08-06
申请人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
发明人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
摘要翻译：在半导体衬底中形成用作晶体管的源极或漏极的杂质扩散层，形成覆盖晶体管的保护绝缘膜。在保护绝缘膜上依次形成电容器下电极，氧化物电介质膜的电容电介质膜和电容器上电极。用于将晶体管的杂质扩散层电连接到电容器下电极的插头埋入保护绝缘膜中。在塞子和电容器下电极之间形成氧阻隔层。氧阻隔层由作为具有导电性的第一氮化物和具有绝缘性的第二氮化物的混合物或合金的复合氮化物制成。

7. 发明授权

US06939725B2 Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film 失效
标题翻译：制造具有TEOS-03薄膜覆盖的电容器的半导体器件的方法
公开(公告)号：US06939725B2
公开(公告)日：2005-09-06
申请号：US10769808
申请日：2004-02-03
申请人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
发明人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
IPC分类号： H01L23/522 , C23C16/40 , H01L21/02 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/06 , H01L27/105 , H01L27/108 , H01L21/00 , H01L29/76
CPC分类号： H01L28/55 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31612
摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.
摘要翻译：在半导体衬底上形成包括电容器下电极，高电介质膜的电容器电介质膜或铁电体膜和电容器上电极的电容器。在半导体衬底上形成保护膜以覆盖电容器。具有相对较大含水量的第一TEOS膜通过臭氧浓度相对较低的第一TEOS-O 3 CVD形成在保护膜上。通过第二TEOS-O 3 3在第一TEOS-O 3膜上形成具有相对较小含水量的第二TEOS-O 3膜。臭氧浓度相对较高的CVD。

8. 发明授权

US06737697B2 Semiconductor device and method and system for fabricating the same 失效
公开(公告)号：US06737697B2
公开(公告)日：2004-05-18
申请号：US09779662
申请日：2001-02-09
申请人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
发明人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
IPC分类号： H01L2976
CPC分类号： H01L28/55 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31612
摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.

9. 发明授权

US08671528B2 Assembling construction of clip to mountable member 有权
标题翻译：夹子安装构件的组装
公开(公告)号：US08671528B2
公开(公告)日：2014-03-18
申请号：US13377506
申请日：2010-05-25
申请人： Shinichiro Hayashi
发明人： Shinichiro Hayashi
IPC分类号： A44B1/04
CPC分类号： F16B5/0657 , F16B5/065 , F16B21/086
摘要： An assembling construction assembles a mountable member to a support member by holding a head portion of a clip on a mounting seat of the mountable member while securely fitting a leg portion in a mounting hole in the support member, the mounting seat has an instruction groove and guide grooves, the head portion of the clip has a first flange portion beam-like strip-shaped elastic pieces and which are brought into press contact with end portions of the guide grooves and stopper projections which are adapted to be brought into engagement with the end portions of the guide grooves when the clip is attempted to be shifted largely relative to the mounting seat.
摘要翻译：组装结构通过将夹子的头部保持在可安装构件的安装座上，同时将腿部牢固地安装在支撑构件的安装孔中，将安装构件组装到支撑构件上，安装座具有指示槽和引导槽，夹子的头部具有第一凸缘部分的束状条状弹性片，并与引导槽和止动突起的端部压接，这些端部适于与端部当试图夹子相对于安装座大幅偏移时，引导槽的部分。

10. 发明授权

US08492718B2 Measurement apparatus and measurement method 有权
标题翻译：测量仪器及测量方法
公开(公告)号：US08492718B2
公开(公告)日：2013-07-23
申请号：US13485686
申请日：2012-05-31
申请人： Yuichi Ogawa , Shinichiro Hayashi , Eiji Kato
发明人： Yuichi Ogawa , Shinichiro Hayashi , Eiji Kato
IPC分类号： G01T1/17 , G01T7/00
CPC分类号： G01N21/3581 , G01N21/95692 , H01L31/0232 , H01L31/101
摘要： There is provided a measuring apparatus including a space arrangement structure that includes space regions surrounded by conductors in a plane, an electromagnetic wave emitter that emits electromagnetic waves towards an object held by the space arrangement structure, and an electromagnetic wave detector that measures the electromagnetic waves that have passed through the space arrangement structure. Here, characteristics of the object are measured by measuring the electromagnetic waves that have passed through the space arrangement structure. The electromagnetic waves emitted from the electromagnetic wave emitter towards the space arrangement structure are incident on the plane containing the space regions at an angle, and the electromagnetic waves that have passed through the space arrangement structure are measured.
摘要翻译：提供了一种测量装置，包括：空间布置结构，包括由平面内的导体包围的空间区域;朝向由所述空间布置结构保持的物体发射电磁波的电磁波发射器;以及测量电磁波的电磁波检测器已经通过了空间布置结构。这里，通过测量已经通过空间排列结构的电磁波来测量物体的特性。从电磁波发射器朝向空间配置结构发射的电磁波以一定角度入射在包含空间区域的平面上，并且测量已经通过空间布置结构的电磁波。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式