专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07180122B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07180122B2
公开(公告)日：2007-02-20
申请号：US10823797
申请日：2004-04-14
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/119
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
摘要翻译：半导体器件包括第一氢阻挡膜，形成在第一氢阻挡膜上的电容器器件和形成为覆盖电容器器件的第二氢阻挡膜。第一和第二氢阻挡膜每个含有至少一种常见类型的原子，用于允许第一和第二氢阻挡膜彼此粘附。

2. 发明申请

US20060124983A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060124983A1
公开(公告)日：2006-06-15
申请号：US11346207
申请日：2006-02-03
申请人： Toshie Kutsunai , Takumi Mikawa , Yuji Judai
发明人： Toshie Kutsunai , Takumi Mikawa , Yuji Judai
IPC分类号： H01L21/8242 , H01L29/94
CPC分类号： H01L27/11507 , H01L21/28568 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A semiconductor device has contact plugs each for electrically connecting a capacitor element to the source/drain region of a transistor, conductive layers formed on the contact plugs and made of titanium nitride which is a nitride only of a refractory metal, and polycrystalline conductive oxygen barrier layers each composed of a multilayer structure consisting of a titanium aluminum nitride film, an iridium film, and an iridium oxide film to prevent the diffusion of oxygen. Since the conductive layers made of titanium nitride which is low in crystal orientation is provided under the oxygen barrier films, the titanium aluminum nitride films formed as the oxygen barrier films directly on the conductive layers have a compact film structure so that the penetration of oxygen is prevented effectively.
摘要翻译：半导体器件具有用于将电容器元件电连接到晶体管的源极/漏极区域的接触插塞，形成在接触插塞上的导电层和仅由耐火金属制成的氮化钛制成的多晶导电氧气阻挡层各层由由氮化铝钛膜，铱膜和氧化铱膜构成的多层结构构成，以防止氧的扩散。由于在氧阻隔膜下面设置由结晶取向低的氮化钛制成的导体层，所以直接在导电层上形成为氧阻隔膜的氮化铝钛膜具有致密的膜结构，使得氧的渗透为有效防范。

3. 发明申请

US20060220091A1 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US20060220091A1
公开(公告)日：2006-10-05
申请号：US11366570
申请日：2006-03-03
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.

4. 发明授权

US07060552B2 Memory device with hydrogen-blocked ferroelectric capacitor 有权
标题翻译：具有氢阻塞铁电电容器的存储器件
公开(公告)号：US07060552B2
公开(公告)日：2006-06-13
申请号：US10843435
申请日：2004-05-12
申请人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
发明人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
IPC分类号： H01L21/8242
CPC分类号： H01L27/11502 , H01L27/10894 , H01L27/11507 , H01L28/55
摘要： A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor substrate, a capacitance insulating film formed on the first electrode, and a second electrode provided on the capacitance insulating film; a step reducing film covering an upper surface and a side surface of the memory cell capacitor; and an overlying hydrogen barrier film covering the step reducing film.
摘要翻译：本发明的半导体存储器件包括：半导体衬底; 用于存储数据的存储单元电容器，包括设置在半导体衬底上的第一电极，形成在第一电极上的电容绝缘膜和设置在电容绝缘膜上的第二电极; 覆盖所述存储单元电容器的上表面和侧面的阶梯降低膜; 以及覆盖降低层的覆盖氢阻挡膜。

5. 发明授权

US07557011B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07557011B2
公开(公告)日：2009-07-07
申请号：US11280250
申请日：2005-11-17
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L21/108 , H01L21/316 , H01L21/318
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
摘要翻译：半导体器件包括第一氢阻挡膜，形成在第一氢阻挡膜上的电容器器件和形成为覆盖电容器器件的第二氢阻挡膜。第一和第二氢阻挡膜每个含有至少一种常见类型的原子，用于允许第一和第二氢阻挡膜彼此粘附。

6. 发明授权

US06963095B2 Ferroelectric memory device and method for fabricating the same 有权
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06963095B2
公开(公告)日：2005-11-08
申请号：US10632931
申请日：2003-08-04
申请人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
发明人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
IPC分类号： H01L27/105 , H01L21/02 , H01L21/321 , H01L21/768 , H01L21/8246 , H01L27/115 , H01L29/72
CPC分类号： H01L28/65 , H01L21/3212 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： The ferroelectric memory device has a plurality of capacitor elements each formed on a semiconductor substrate and composed of a lower electrode, a capacitor insulating film made of a ferroelectric material formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. Each of the lower electrodes is buried in a burying insulating film to have an upper surface planarized relative to the upper surface of the burying insulating film and has a plane configuration such that the distance from an arbitrary position on the upper surface of the lower electrode to the nearest end portion thereof is 0.6 μm or less.
摘要翻译：铁电存储器件具有多个电容器元件，每个电容器元件形成在半导体衬底上，由下电极，形成在下电极上的铁电材料制成的电容器绝缘膜和形成在电容器绝缘膜上的上电极组成。每个下电极被埋在埋入绝缘膜中以使上表面相对于掩埋绝缘膜的上表面平坦化，并且具有平面构造，使得从下电极的上表面上的任意位置到下电极的距离其最接近的端部为0.6μm以下。

7. 发明授权

US06753566B2 Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride 有权
标题翻译：具有由复合氮化物形成的氧扩散阻挡层的半导体器件
公开(公告)号：US06753566B2
公开(公告)日：2004-06-22
申请号：US10441118
申请日：2003-05-20
申请人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
发明人： Toshie Kutsunai , Shinichiro Hayashi , Takumi Mikawa , Yuji Judai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
摘要翻译：在半导体衬底中形成用作晶体管的源极或漏极的杂质扩散层，形成覆盖晶体管的保护绝缘膜。在保护绝缘膜上依次形成电容器下电极，氧化物电介质膜的电容电介质膜和电容器上电极。用于将晶体管的杂质扩散层电连接到电容器下电极的插头埋入保护绝缘膜中。在塞子和电容器下电极之间形成氧阻隔层。氧阻隔层由作为具有导电性的第一氮化物和具有绝缘性的第二氮化物的混合物或合金的复合氮化物制成。

8. 发明授权

US06750492B2 Semiconductor memory with hydrogen barrier 有权
标题翻译：具有氢屏障的半导体存储器
公开(公告)号：US06750492B2
公开(公告)日：2004-06-15
申请号：US10053693
申请日：2002-01-24
申请人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
发明人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10894 , H01L27/11507 , H01L28/55
摘要： A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor substrate, a capacitance insulating film formed on the first electrode, and a second electrode provided on the capacitance insulating film; a step reducing film covering an upper surface and a side surface of the memory cell capacitor; and an overlying hydrogen barrier film covering the step reducing film.
摘要翻译：本发明的半导体存储器件包括：半导体衬底; 用于存储数据的存储单元电容器，包括设置在半导体衬底上的第一电极，形成在第一电极上的电容绝缘膜和设置在电容绝缘膜上的第二电极; 覆盖所述存储单元电容器的上表面和侧面的阶梯降低膜; 以及覆盖降低层的覆盖氢阻挡膜。

9. 发明授权

US07326990B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07326990B2
公开(公告)日：2008-02-05
申请号：US11366570
申请日：2006-03-03
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L29/76 , H01L29/94 , H01L27/108 , H01L31/062 , H01L31/119
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
摘要翻译：半导体器件包括第一氢阻挡膜，形成在第一氢阻挡膜上的电容器器件和形成为覆盖电容器器件的第二氢阻挡膜。第一和第二氢阻挡膜每个含有至少一种常见类型的原子，用于允许第一和第二氢阻挡膜彼此粘附。

10. 发明申请

US20050012133A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050012133A1
公开(公告)日：2005-01-20
申请号：US10823797
申请日：2004-04-14
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
摘要翻译：半导体器件包括第一氢阻挡膜，形成在第一氢阻挡膜上的电容器器件和形成为覆盖电容器器件的第二氢阻挡膜。第一和第二氢阻挡膜每个含有至少一种常见类型的原子，用于允许第一和第二氢阻挡膜彼此粘附。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式