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21. 发明授权

US06613200B2 Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform 失效
标题翻译：电化学镀层减薄，并与化学机械抛光机整合成单个平台
公开(公告)号：US06613200B2
公开(公告)日：2003-09-02
申请号：US09770559
申请日：2001-01-26
申请人： Shijian Li , Stan D. Tsai , Lizhong Sun
发明人： Shijian Li , Stan D. Tsai , Lizhong Sun
IPC分类号： C25D1700
CPC分类号： B24B37/32 , B24B37/046 , C25D17/001 , H01L21/2885 , H01L21/3212
摘要： An apparatus is provided for depositing and polishing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a basin, a cover, a permeable disc, an anode and a polishing head. The permeable disc is disposed in the basin between the cover and the basin's bottom. The cover has an aperture disposed therein that includes a plurality of pins. The pins extend radially into the aperture and are adapted to support the substrate. The anode is disposed in the basin between the disc and the bottom of the basin. The polishing head is adapted to retain the substrate during processing and includes a retaining ring. The retaining ring has a plurality of grooves disposed therein that mate with the pins when the polishing head is disposed in the aperture. When the substrate is biased via the pins, the potential between the substrate and the anode causes material to be deposited on the substrate's surface.
摘要翻译：提供了一种用于在衬底上沉积和抛光材料层的装置。在一个实施例中，提供了一种装置，其包括盆，盖，可渗透盘，阳极和抛光头。可渗透盘设置在盖和盆底之间的盆中。盖具有设置在其中的孔，其包括多个销。销钉径向延伸到孔中并且适于支撑基底。阳极设置在圆盘和盆底之间的盆中。抛光头适于在加工过程中保持基底并且包括保持环。保持环具有设置在其中的多个槽，当抛光头设置在孔中时与该销相配合。当衬底经由引脚偏置时，衬底和阳极之间的电势使材料沉积在衬底的表面上。

22. 发明授权

US06509269B2 Elimination of pad glazing for Al CMP 失效
标题翻译：消除Al CMP的衬垫玻璃
公开(公告)号：US06509269B2
公开(公告)日：2003-01-21
申请号：US09421452
申请日：1999-10-19
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： H01L21302
CPC分类号： B24B37/0056 , B24B37/044 , B24B53/017 , H01L21/3212
摘要： Polishing pad glazing during CMP of Al and Al alloys is eliminated or substantially reduced by utilizing a neutral polishing slurry containing a sufficient amount of a surfactant to prevent agglomeration of the abrasive particles with polishing by-products. Embodiments include CMP an Al or an Al alloy surface employing a slurry containing abrasive Al203 particles and about 0.02 to about 5 wt. % of a surfactant to prevent Al203 abrasive slurry particles from agglomerating with Al(OH)3 polishing by-products. Embodiments further include subsequent ex situ pad conditioning using an acid or base to dissolve, or a complexing agent to remove, Al(OH)3 polishing by-products.
摘要翻译：通过利用含有足够量的表面活性剂的中性抛光浆料来消除或大大减少Al和Al合金的CMP期间的抛光垫玻璃，以防止磨料颗粒与抛光副产物团聚。实施方案包括使用含有磨料Al 2 O 3颗粒和约0.02至约5重量％的浆料的CMP或Al合金表面。％的表面活性剂，以防止Al2O3磨料浆料颗粒与Al（OH）3抛光副产物附聚。实施例还包括使用酸或碱溶解的随后的非原位垫调节剂或用于去除Al（OH）3抛光副产物的络合剂。

23. 发明授权

US06451697B1 Method for abrasive-free metal CMP in passivation domain 失效
标题翻译：钝化区无磨料金属CMP的方法
公开(公告)号：US06451697B1
公开(公告)日：2002-09-17
申请号：US09544281
申请日：2000-04-06
申请人： Lizhong Sun , Shijian Li , Fritz Redeker
发明人： Lizhong Sun , Shijian Li , Fritz Redeker
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , C09G1/00
摘要： Metal CMP with reduced dishing and overpolish insensitivity is achieved with an abrasive-free polishing composition having a pH and oxidation-reduction potential in the domain of passivation of the metal and, therefore, a low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments of the present invention comprise CMP of Cu film without any abrasive using a composition comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more agents to achieve a pH of about 3 to about 10 and deionized water.
摘要翻译：具有减少的凹陷和过度不敏感性的金属CMP通过在金属钝化领域具有pH和氧化还原电位的无磨料抛光组合物实现，因此在高温下具有低的静态蚀刻速率，例如高于本发明的实施方案包括使用包含一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂，一种或多种pH达3〜约10和去离子水。

24. 发明授权

US06863794B2 Method and apparatus for forming metal layers 失效
标题翻译：用于形成金属层的方法和装置
公开(公告)号：US06863794B2
公开(公告)日：2005-03-08
申请号：US09961134
申请日：2001-09-21
申请人： Stan Tsai , Shijian Li
发明人： Stan Tsai , Shijian Li
IPC分类号： B23H5/08 , C25D5/18 , C25D5/22 , C25D5/06 , C25D11/32 , H01L21/288
CPC分类号： C25D5/18 , B23H5/08 , C25D5/22
摘要： A method of forming a metal layer on a substrate is disclosed. The metal layer is formed using a combined electrochemical plating/electrochemical mechanical polishing (ECP/EMP) process. In the ECP/EMP process, the metal layer is deposited on the substrate by contacting the substrate with a porous pad and then alternately applying a first electrical potential and a second electrical potential to an electrolyte plating solution. The first electrical potential functions to deposit metal on the substrate while the second electrical potential functions to remove metal from topographic portions thereof.
摘要翻译：公开了一种在基板上形成金属层的方法。使用组合的电化学电镀/电化学机械抛光（ECP / EMP）工艺形成金属层。在ECP / EMP工艺中，通过使衬底与多孔焊盘接触而将金属层沉积在衬底上，然后交替地向电解镀液中施加第一电位和第二电位。第一电势用于将金属沉积在衬底上，而第二电势用于从其地形部分去除金属。

25. 发明授权

US08551575B1 Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after a plating process 有权
标题翻译：用于防止在电镀工艺之后在基板上形成金属颗粒缺陷物质的方法和解决方案
公开(公告)号：US08551575B1
公开(公告)日：2013-10-08
申请号：US13401244
申请日：2012-02-21
申请人： Shijian Li , Artur K. Kolics , Tiruchirapalli N. Arunagiri
发明人： Shijian Li , Artur K. Kolics , Tiruchirapalli N. Arunagiri
IPC分类号： C23C18/16 , C23C18/50
CPC分类号： C23C18/50 , C23C18/1689 , C25D5/48
摘要： Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after plating processes are provided. In particular, solutions are provided which are free of oxidizing agents and include a non-metal pH adjusting agent in sufficient concentration such that the solution has a pH between approximately 7.5 and approximately 12.0. In some cases, a solution may include a chelating agent. In addition or alternatively, a solution may include at least two different types of complexing agents each offering a single point of attachment for binding metal ions via respectively different functional groups. In any case, at least one of the complexing agents or the chelating agent includes a non-amine or non-imine functional group. An embodiment of a method for processing a substrate includes plating a metal layer upon the substrate and subsequently exposing the substrate to a solution comprising the aforementioned make-up.
摘要翻译：提供了用于防止在电镀工艺之后在基板上形成金属颗粒缺陷物质的方法和解决方案。特别地，提供了不含氧化剂的溶液，并且包括足够浓度的非金属pH调节剂，使得溶液的pH在约7.5至约12.0之间。在一些情况下，溶液可以包括螯合剂。另外或替代地，溶液可以包括至少两种不同类型的络合剂，其各自提供用于通过分别不同的官能团结合金属离子的单个附着点。在任何情况下，至少一种络合剂或螯合剂包括非胺或非亚胺官能团。用于处理衬底的方法的实施例包括将金属层电镀在衬底上，随后将衬底暴露于包含上述组成的溶液中。

26. 发明授权

US08323460B2 Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal 有权
标题翻译：用于三维集成电路通孔的方法和系统通过间隙填充和覆盖层去除
公开(公告)号：US08323460B2
公开(公告)日：2012-12-04
申请号：US11820810
申请日：2007-06-20
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： C25D17/00
CPC分类号： C25D3/00 , H01L21/2885 , H01L21/32115 , H01L21/67005 , H01L21/67023 , H01L21/67075 , H01L21/6708 , H01L21/6715 , H01L21/768 , H01L21/7684 , H01L21/76883 , H01L21/76898
摘要： Presented are methods and systems for fabricating three-dimensional integrated circuits having large diameter through-hole vias. One embodiment of the present invention provides a method of processing a wafer having holes for through-hole vias. The method comprises plating a gapfill metal on the wafer. The method also comprises chemically or electrochemically deplating a portion of the overburden metal. The method further comprises using chemical mechanical planarization to planarize the gapfill metal and to remove the remaining overburden metal. Another embodiment of the present invention is an integrated system comprising a process chamber for containing the wafer, a plating component integrated with the process chamber, and a deplating component integrated with the process chamber. The plating component is configured to electrochemically plate a gapfill metal onto the wafer to a least partially fill the holes. The deplating component is configured to chemically or to electrochemically remove a portion of the overburden metal formed by the plating component.
摘要翻译：提出了用于制造具有大直径通孔的三维集成电路的方法和系统。本发明的一个实施例提供一种处理具有用于通孔过孔的孔的晶片的方法。该方法包括在晶片上镀覆间隙填充金属。该方法还包括化学地或电化学地去除一部分覆盖层金属。该方法还包括使用化学机械平面化来平坦化间隙填充金属并除去剩余的覆盖层金属。本发明的另一实施例是一种集成系统，其包括用于容纳晶片的处理室，与处理室一体化的电镀部件，以及与处理室一体化的去掉部件。电镀部件被配置为将间隙填充金属电化学地平板化到晶片上以至少部分地填充孔。脱镀部件被配置为化学地或电化学地去除由电镀部件形成的覆盖层金属的一部分。

27. 发明授权

US08187968B2 Methods of post-contact back end of line through-hole via integration 有权
标题翻译：通过一体化的后通孔后端的方法
公开(公告)号：US08187968B2
公开(公告)日：2012-05-29
申请号：US12613518
申请日：2009-11-05
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： H01L21/00
CPC分类号： H01L23/48 , H01L21/4763 , H01L21/76898 , H01L2924/14
摘要： Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.
摘要翻译：提出了制造三维集成电路的方法，其包括用于三维集成电路的集成的线路通孔的后接触后端。本发明的另一方面包括根据本发明的方法制造的三维集成电路。

28. 发明授权

US07977199B2 Method for measuring dopant concentration during plasma ion implantation 有权
标题翻译：在等离子体离子注入期间测量掺杂剂浓度的方法
公开(公告)号：US07977199B2
公开(公告)日：2011-07-12
申请号：US12777085
申请日：2010-05-10
申请人： Majeed A. Foad , Shijian Li
发明人： Majeed A. Foad , Shijian Li
IPC分类号： H01L21/00
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

29. 发明授权

US07732309B2 Plasma immersed ion implantation process 有权
标题翻译：等离子体浸入式离子注入工艺
公开(公告)号：US07732309B2
公开(公告)日：2010-06-08
申请号：US11608357
申请日：2006-12-08
申请人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子混合物进入底物。在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到腔室中，以及将离子从气体混合物注入到衬底中。

30. 发明授权

US07713757B2 Method for measuring dopant concentration during plasma ion implantation 有权
标题翻译：在等离子体离子注入期间测量掺杂剂浓度的方法
公开(公告)号：US07713757B2
公开(公告)日：2010-05-11
申请号：US12049047
申请日：2008-03-14
申请人： Majeed A. Foad , Shijian Li
发明人： Majeed A. Foad , Shijian Li
IPC分类号： H01L21/66 , C23F1/08 , C23C16/44
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

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