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21. 发明授权

US5299218A Multi-tip semiconductor laser 失效
标题翻译：多尖端半导体激光器
公开(公告)号：US5299218A
公开(公告)日：1994-03-29
申请号：US914078
申请日：1992-07-16
申请人： Yuzaburo Ban , Touru Saitoh , Tadasi Narusawa , Kiyoshi Ohnaka
发明人： Yuzaburo Ban , Touru Saitoh , Tadasi Narusawa , Kiyoshi Ohnaka
IPC分类号： H01S3/16 , H01J21/10 , H01S3/06 , H01S3/0959 , H01S5/00 , H01S5/04 , H01S3/19
CPC分类号： H01S5/04 , H01J21/105
摘要： A multi-tip semiconductor laser comprises: a substrate; a cladding layer; an active layer formed of alkali-halide crystal on the cladding layer; at least a field emission tip formed on a surface of the substrate to have a substantially corn shape, the field emission tip being so arranged to confront the active layer; a vacuum space structure for providing a space between substrate and the cladding layer with the field emission tip confronting the active layer and for maintaining the space in a vacuum state; and an electrode structure for a producing electrostatic field between the field emission tip and the same in response to an external voltage supply such that the field emission tip emits an electron beam toward the active layer. The active layer may be doped and be made of organic crystal. It may further comprises a conducting layer covering at least a portion of said active layer. The active layer may be formed in a channel formed in the anode layer. The active layer may be formed in a capillary buried in a channel formed in the anode layer. This multi-tip semiconductor laser emits blue laser light.
摘要翻译：多尖端半导体激光器包括：基板; 包层; 在包层上形成由碱卤化物晶体形成的活性层; 至少形成在所述基板的表面上以具有大致玉米形状的场致发射尖端，所述场发射尖端被布置为面对所述有源层; 真空空间结构，用于在衬底和包层之间提供与活性层相对的场发射尖端并用于将空间保持在真空状态的空间; 以及用于响应于外部电压供应而在场发射尖端与其之间产生静电场的电极结构，使得场发射尖端朝向有源层发射电子束。有源层可以掺杂并由有机晶体制成。它还可以包括覆盖所述有源层的至少一部分的导电层。有源层可以形成在形成在阳极层中的沟道中。活性层可以形成在掩埋在阳极层中形成的沟道中的毛细管中。该多尖端半导体激光器发射蓝色激光。

22. 发明授权

US5029175A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5029175A
公开(公告)日：1991-07-02
申请号：US437934
申请日：1989-11-17
申请人： Kiyoshi Ohnaka , Mototsugu Ogura
发明人： Kiyoshi Ohnaka , Mototsugu Ogura
IPC分类号： H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/2231 , H01S5/2205 , H01S5/2209 , H01S5/221 , H01S5/2211 , H01S5/2214 , H01S5/2216 , H01S5/2275 , H01S5/32325
摘要： In a semiconductor laser, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, AlGaInP or amorphous layer smaller in refractive index than the AlGaInP cladding layer are formed at both sides of the stripes, wherein the light can be confined and guided also in the direction parallel to the active layer, and the light can be index-guided both in the direction parallel to the active layer and in the direction vertical thereto, so that a laser having an extremely smaller astigmatism may be presented. In addition, the current blocking layer disposed at the outer side of the insulating film, AlGaInP or amorphous layer is high in thermal conductivity, and the heat generated in the vicinity of the active layer may be efficiently released.
摘要翻译：在半导体激光器中，在GaAs衬底上形成厚度更大的导体类型，有源层和其它导电类型的AlGaInP包层的AlGaInP包覆层，并且在GaAs衬底上形成绝缘膜，AlGaInP或非晶层折射率比AlGaInP包层形成在条纹的两侧，其中光可以在平行于有源层的方向上被限制和引导，并且光可以在平行于活动的方向上被引导引导层并且在垂直于其的方向上，使得可以呈现具有非常小的散光的激光。此外，设置在绝缘膜的外侧的电流阻挡层AlGaInP或非晶层的导热性高，并且可以有效地释放在活性层附近产生的热量。

23. 发明申请

US20090159924A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20090159924A1
公开(公告)日：2009-06-25
申请号：US12391531
申请日：2009-02-24
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在活性层的c面产生各向异性应变。

24. 发明授权

US07167387B2 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US07167387B2
公开(公告)日：2007-01-23
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

25. 发明授权

US06921678B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US06921678B2
公开(公告)日：2005-07-26
申请号：US10434063
申请日：2003-05-09
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/223
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

26. 发明授权

US06544869B1 Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device 失效
公开(公告)号：US06544869B1
公开(公告)日：2003-04-08
申请号：US09884133
申请日：2001-06-20
申请人： Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L2120
CPC分类号： C23C16/45582 , C23C16/52 , C30B25/14 , Y10T117/10
摘要： A method for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer. When a process condition, e.g., the flow velocity or pressure of the source gas, should be changed, the source gas has its velocity and/or pressure changed so that the source gas is supplied at a substantially constant flow rate.

27. 发明授权

US5751013A Semiconductor light-emitting device and production method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5751013A
公开(公告)日：1998-05-12
申请号：US619483
申请日：1996-03-21
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01S3/19
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译： PCT No.PCT / JP95 / 01447 Sec。 371日期1996年3月21日 102（e）1996年3月21日PCT PCT 1995年7月20日PCT公布。出版物WO96 / 03776 日期：1996年2月8日具有双异质结构的半导体发光器件包括：掺杂有p型杂质的Ga1-xInxN（0≤x≤0.3）构成的有源层，n型不纯; 以及设置成夹持有源层的第一和第二覆层。

28. 发明授权

US5345463A Semiconductor laser with improved oscillation wavelength reproducibility 失效
标题翻译：具有改善振荡波长再现性的半导体激光器
公开(公告)号：US5345463A
公开(公告)日：1994-09-06
申请号：US45423
申请日：1993-04-13
申请人： Masaya Mannoh , Kiyoshi Ohnaka
发明人： Masaya Mannoh , Kiyoshi Ohnaka
IPC分类号： H01S5/00 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32325 , H01S5/305 , H01S5/2231 , H01S5/3211
摘要： A lateral mode control type of semiconductor laser has a high-yield structure having a long life and improved oscillation wavelength reproducibility. A diffusion limit layer formed of an undoped Ga.sub.0.5 In.sub.0.5 P layer and an undoped (Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P layer is provided between a p-(Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P clad layer and an undoped Ga.sub.0.5 In.sub.0.5 P active layer. The diffusion limit layer has a diffusion coefficient smaller than that of the clad layer. Impurity Zn diffused from the p-(Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P clad layer during crystal growth or working is trapped in the undoped Ga.sub.0.5 In.sub.0.5 P layer almost entirely. A part of the impurity Zn diffuses in the undoped (Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P layer thereunder but does not reach the undoped Ga.sub.0.5 In.sub.0.5 P active layer.
摘要翻译：半导体激光器的横向模式控制型具有寿命长，振荡波长再现性提高的高产率结构。由未掺杂的Ga0.5In0.5P层和未掺杂的（Al0.6Ga0.4）0.5In0.5P层形成的扩散极限层设置在p（Al 0.6 Ga 0.4）0.5 In 0.5 P包层和未掺杂的Ga0.5In0.5P有源层。扩散极限层的扩散系数小于包覆层的扩散系数。在晶体生长或加工期间从p-（Al0.6Ga0.4）0.5In0.5P包覆层扩散的杂质Zn几乎完全被捕获在未掺杂的Ga 0.5 In 0.5 P层中。杂质Zn的一部分在其下面的未掺杂（Al 0.6 Ga 0.4）0.5 In 0.5 P层中扩散，但未到达未掺杂的Ga 0.5 In 0.5 P活性层。

29. 发明授权

US5323405A Anti-guided phase-locked array and manufacturing method therefor 失效
标题翻译：反引导锁相阵列及其制造方法
公开(公告)号：US5323405A
公开(公告)日：1994-06-21
申请号：US953359
申请日：1992-09-30
申请人： Satoshi Kamiyama , Kiyoshi Ohnaka
发明人： Satoshi Kamiyama , Kiyoshi Ohnaka
IPC分类号： H01L27/15 , H01S5/00 , H01S5/042 , H01S5/20 , H01S5/40 , H01S3/082 , H01S3/098 , H01S3/25
CPC分类号： H01S5/4031 , H01S5/2059
摘要： A phase-locked laser array comprising a plurality of element regions for passing electric current into an active layer; and inter-element regions formed between the element regions. Each of the inter-element regions is so formed as to have two regions, i.e. a non-diffusion region at the center thereof and a diffusion regions disposed on both sides thereof, thereby rendering the refractive index in the non-diffusion region higher than that in the diffusion regions. The method of manufacturing the phase-locked laser array which is characterized by including a step growing an optical waveguide layer of superlattice on a portion of a second clad layer while diffusing impurities doped in the second clad layer into said optical waveguide layer, thereby forming a diffusion regions on both sides of the inter-element region.
摘要翻译：一种锁相激光器阵列，包括用于将电流传递到有源层中的多个元件区域; 以及形成在元件区域之间的元件间区域。每个元件间区域被形成为具有两个区域，即其中心处的非扩散区域和设置在其两侧的扩散区域，从而使非扩散区域中的折射率高于不扩散区域的折射率在扩散区域。制造锁相激光器阵列的方法，其特征在于包括在第二包覆层的一部分上生长超晶格的光波导层的步骤，同时将掺杂在第二包层中的杂质扩散到所述光波导层中，从而形成扩散区域在元件间区域的两侧。

30. 发明授权

US5144633A Semiconductor laser and manufacturing method thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5144633A
公开(公告)日：1992-09-01
申请号：US704969
申请日：1991-05-23
申请人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
发明人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/2059 , H01S5/2205 , H01S5/32325
摘要： A hetero structure semiconductor laser of inner stripe type comprises an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P first cladding layer of a first conductivity type, a Ga.sub.0.5 In.sub.0.5 P or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P second cladding layer of a second conductivity type different from the first conductivity type, an AlInP or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P confinement layer or a SiO.sub.2 having a stripe-like opening and having a refractive index lower than that of the first cladding layer, and an upper cladding layer having a band gap larger than that of the first cladding layer having a refractive index lower than that of the second cladding layer are formed successively on a GaAs substrate. Further, the width of the active layer may be narrowed as a stripe-like structure. Thus, astigmatism of a semiconductor laser becomes smaller and the threshold value of laser action becomes smaller. The manufacturing methods of such a semiconductor laser are also disclosed.
摘要翻译：内条型的异质结构半导体激光器包括第一导电类型的（Al x Ga 1-x）0.5 In 0.5 P第一包层，Ga 0.5 In 0.5 P或（Al x Ga 1-x）0.5 In 0.5 P活性层，（ Al x Ga 1-x）0.5 In 0.5 P第二导电类型的不同于第一导电类型的第二包层，AlInP或（Al x Ga 1-x）0.5 In 0.5 P限制层或具有条状开口并具有折射率指数低于第一包覆层的折射率，并且在GaAs衬底上依次形成具有比第二包覆层的折射率低的第一包层的带隙大的带隙的上包层。此外，活性层的宽度可以变窄为条状结构。因此，半导体激光器的像散变小，激光作用的阈值变小。还公开了这种半导体激光器的制造方法。

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