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1. 发明授权

US5299218A Multi-tip semiconductor laser 失效
标题翻译：多尖端半导体激光器
公开(公告)号：US5299218A
公开(公告)日：1994-03-29
申请号：US914078
申请日：1992-07-16
申请人： Yuzaburo Ban , Touru Saitoh , Tadasi Narusawa , Kiyoshi Ohnaka
发明人： Yuzaburo Ban , Touru Saitoh , Tadasi Narusawa , Kiyoshi Ohnaka
IPC分类号： H01S3/16 , H01J21/10 , H01S3/06 , H01S3/0959 , H01S5/00 , H01S5/04 , H01S3/19
CPC分类号： H01S5/04 , H01J21/105
摘要： A multi-tip semiconductor laser comprises: a substrate; a cladding layer; an active layer formed of alkali-halide crystal on the cladding layer; at least a field emission tip formed on a surface of the substrate to have a substantially corn shape, the field emission tip being so arranged to confront the active layer; a vacuum space structure for providing a space between substrate and the cladding layer with the field emission tip confronting the active layer and for maintaining the space in a vacuum state; and an electrode structure for a producing electrostatic field between the field emission tip and the same in response to an external voltage supply such that the field emission tip emits an electron beam toward the active layer. The active layer may be doped and be made of organic crystal. It may further comprises a conducting layer covering at least a portion of said active layer. The active layer may be formed in a channel formed in the anode layer. The active layer may be formed in a capillary buried in a channel formed in the anode layer. This multi-tip semiconductor laser emits blue laser light.
摘要翻译：多尖端半导体激光器包括：基板; 包层; 在包层上形成由碱卤化物晶体形成的活性层; 至少形成在所述基板的表面上以具有大致玉米形状的场致发射尖端，所述场发射尖端被布置为面对所述有源层; 真空空间结构，用于在衬底和包层之间提供与活性层相对的场发射尖端并用于将空间保持在真空状态的空间; 以及用于响应于外部电压供应而在场发射尖端与其之间产生静电场的电极结构，使得场发射尖端朝向有源层发射电子束。有源层可以掺杂并由有机晶体制成。它还可以包括覆盖所述有源层的至少一部分的导电层。有源层可以形成在形成在阳极层中的沟道中。活性层可以形成在掩埋在阳极层中形成的沟道中的毛细管中。该多尖端半导体激光器发射蓝色激光。

2. 发明授权

US6136626A Semiconductor light-emitting device and production method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US6136626A
公开(公告)日：2000-10-24
申请号：US243777
申请日：1999-02-03
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01L33/64 , H01S5/042 , H01S5/20 , H01S5/30 , H01S5/323 , H01S5/327 , H01L21/20
CPC分类号： H01L33/025 , H01L33/007 , H01L33/32 , H01L33/325 , H01S5/305 , H01S5/32341 , H01L33/64 , H01S5/0422 , H01S5/2059 , H01S5/3063 , H01S5/327
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译：一种具有双异质结构的半导体发光器件，包括：由掺杂有p型杂质和n型杂质的Ga1-xInxN（0≤x≤0.3）制成的有源层; 以及设置成夹持有源层的第一和第二覆层。

3. 发明授权

US5895225A Semiconductor light-emitting device and production method thereof 失效
公开(公告)号：US5895225A
公开(公告)日：1999-04-20
申请号：US978848
申请日：1997-11-26
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01S3/02
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

4. 发明授权

US07160748B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US07160748B2
公开(公告)日：2007-01-09
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

5. 发明授权

US6133058A Fabrication of semiconductor light-emitting device 有权
标题翻译：半导体发光器件的制造
公开(公告)号：US6133058A
公开(公告)日：2000-10-17
申请号：US243648
申请日：1999-02-03
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01L21/00
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译：一种具有双异质结构的半导体发光器件，包括：掺杂有p型杂质和n型杂质的由Ga1-xInxN（0≤x≤0.3）制成的有源层; 以及设置成夹持有源层的第一和第二覆层。

6. 发明申请

US20050142682A1 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
公开(公告)号：US20050142682A1
公开(公告)日：2005-06-30
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/00 , H01L21/336
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

7. 发明授权

US06921678B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US06921678B2
公开(公告)日：2005-07-26
申请号：US10434063
申请日：2003-05-09
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/223
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

8. 发明授权

US06544869B1 Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device 失效
公开(公告)号：US06544869B1
公开(公告)日：2003-04-08
申请号：US09884133
申请日：2001-06-20
申请人： Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L2120
CPC分类号： C23C16/45582 , C23C16/52 , C30B25/14 , Y10T117/10
摘要： A method for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer. When a process condition, e.g., the flow velocity or pressure of the source gas, should be changed, the source gas has its velocity and/or pressure changed so that the source gas is supplied at a substantially constant flow rate.

9. 发明授权

US5751013A Semiconductor light-emitting device and production method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5751013A
公开(公告)日：1998-05-12
申请号：US619483
申请日：1996-03-21
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01S3/19
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译： PCT No.PCT / JP95 / 01447 Sec。 371日期1996年3月21日 102（e）1996年3月21日PCT PCT 1995年7月20日PCT公布。出版物WO96 / 03776 日期：1996年2月8日具有双异质结构的半导体发光器件包括：掺杂有p型杂质的Ga1-xInxN（0≤x≤0.3）构成的有源层，n型不纯; 以及设置成夹持有源层的第一和第二覆层。

10. 发明授权

US5144633A Semiconductor laser and manufacturing method thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5144633A
公开(公告)日：1992-09-01
申请号：US704969
申请日：1991-05-23
申请人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
发明人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/2059 , H01S5/2205 , H01S5/32325
摘要： A hetero structure semiconductor laser of inner stripe type comprises an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P first cladding layer of a first conductivity type, a Ga.sub.0.5 In.sub.0.5 P or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P second cladding layer of a second conductivity type different from the first conductivity type, an AlInP or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P confinement layer or a SiO.sub.2 having a stripe-like opening and having a refractive index lower than that of the first cladding layer, and an upper cladding layer having a band gap larger than that of the first cladding layer having a refractive index lower than that of the second cladding layer are formed successively on a GaAs substrate. Further, the width of the active layer may be narrowed as a stripe-like structure. Thus, astigmatism of a semiconductor laser becomes smaller and the threshold value of laser action becomes smaller. The manufacturing methods of such a semiconductor laser are also disclosed.
摘要翻译：内条型的异质结构半导体激光器包括第一导电类型的（Al x Ga 1-x）0.5 In 0.5 P第一包层，Ga 0.5 In 0.5 P或（Al x Ga 1-x）0.5 In 0.5 P活性层，（ Al x Ga 1-x）0.5 In 0.5 P第二导电类型的不同于第一导电类型的第二包层，AlInP或（Al x Ga 1-x）0.5 In 0.5 P限制层或具有条状开口并具有折射率指数低于第一包覆层的折射率，并且在GaAs衬底上依次形成具有比第二包覆层的折射率低的第一包层的带隙大的带隙的上包层。此外，活性层的宽度可以变窄为条状结构。因此，半导体激光器的像散变小，激光作用的阈值变小。还公开了这种半导体激光器的制造方法。

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