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1. 发明申请

US20080293247A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080293247A1
公开(公告)日：2008-11-27
申请号：US12178151
申请日：2008-07-23
申请人： Akira Furuya , Nobuyuki Otsuka , Hiroshi Okamura , Shinichi Ogawa
发明人： Akira Furuya , Nobuyuki Otsuka , Hiroshi Okamura , Shinichi Ogawa
IPC分类号： H01L21/768
CPC分类号： H01L21/022 , H01L21/02123 , H01L21/02175 , H01L21/02337 , H01L21/0234 , H01L21/318 , H01L21/3185 , H01L21/76846 , H01L21/76855 , H01L21/76862 , H01L2924/0002 , H01L2924/00
摘要： An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.
摘要翻译：本发明的目的是提供一种包括具有高粘合性和扩散阻挡性的阻挡金属的半导体器件和制造半导体器件的方法。本发明提供一种半导体器件制造方法，包括在基体上形成由含硅的材料制成的第一层; 在所述第一层上形成含有金属和氮的第二层; 并将第二层暴露于包括还原气体的气氛中从等离子体获得的活性物质。

2. 发明授权

US07440899B2 Phonetic-sound providing system, server, client machine, information-provision managing server and phonetic-sound providing method 有权
标题翻译：语音提供系统，服务器，客户机，信息提供管理服务器和语音提供方法
公开(公告)号：US07440899B2
公开(公告)日：2008-10-21
申请号：US10793863
申请日：2004-03-08
申请人： Nobuyuki Otsuka , Kiyoshi Morimoto , Yuka Yamada , Hiroshi Kutsumi , Nobuo Kitao
发明人： Nobuyuki Otsuka , Kiyoshi Morimoto , Yuka Yamada , Hiroshi Kutsumi , Nobuo Kitao
IPC分类号： G10L21/00
CPC分类号： G06F3/16
摘要： A server, which transmits phonetic-sound information to a plurality of client machines and reproduces the transmitted phonetic-sound information, includes a storage unit for storing a plurality of pieces of voiced phonetic-sound information whose contents are voices of a plurality of speakers in a conversation made up of the voices of the plurality of speakers. The server also includes a timing determining unit for determining reproduction timing of the plurality of pieces of voiced phonetic-sound information, and a transmitting unit for transmitting the voiced phonetic-sound information which is applicable to each client machine, so that its reproduction is executed in the reproduction timing determined by the timing determining unit.
摘要翻译：将语音信息发送到多个客户端机器并再现发送的语音信息的服务器包括：存储单元，用于存储多个语音的语音信息，其内容是多个扬声器的语音由多个扬声器的声音组成的对话。服务器还包括用于确定多条有声语音信息的再现定时的定时确定单元，以及用于发送适用于每个客户端机器的有声语音信息的发送单元，从而执行其再现在由定时确定单元确定的再现定时中。

3. 发明申请

US20050067615A1 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050067615A1
公开(公告)日：2005-03-31
申请号：US10962492
申请日：2004-10-13
申请人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
发明人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
IPC分类号： H01L29/68 , H01L29/06 , H01L29/08 , H01L29/12 , H01L29/737 , H01L31/0328
CPC分类号： B82Y10/00 , H01L29/0817 , H01L29/127 , H01L29/7371
摘要： The present invention relates to a semiconductor device comprising a substrate (101); a semiconductor multi-layered structure formed on the substrate (101); the semiconductor multi-layered structure comprising an emitter layer (102), a base layer (105), and a collector layer (107), each composed of a group III-V n-type compound semiconductor and layered in this order; a quantum dot barrier layer (103) disposed between the emitter layer (102) and the base layer (105); a collector electrode (110), a base electrode (111) and an emitter electrode (112) connected to the collector layer (107), the base layer (105) and the emitter layer (102), respectively; the quantum dot barrier layer (103) comprising a plurality of quantum dots (103c); the quantum dots (103) being sandwiched between first and second barrier layers (103a, 103d) from the emitter layer side and the base layer side, respectively; each of the quantum dots (103c) having a convex portion that is convex to the base layer (105); a base layer (105) side interface (d1) in the second barrier layer (103d), and collector layer side and emitter layer side interfaces (d2, d3) in the base layer (105); the interfaces having curvatures (d12, d22, d23) that are convex to the collector layer (107) corresponding to the convex portions of the quantum dots (103c).
摘要翻译：本发明涉及一种包括衬底（101）的半导体器件; 形成在所述基板（101）上的半导体多层结构; 所述半导体多层结构包括由III-V族N型化合物半导体构成的发射极层（102），基极层（105）和集电极层（107），并且按顺序层叠; 设置在发射极层（102）和基极层（105）之间的量子点势垒层（103）; 分别与集电极层（107）连接的集电极（110），基极（111）和发射极（112），基极层（105）和发射极层（102）所述量子点势垒层（103）包括多个量子点（103c）; 量子点（103）分别从发射极侧和基极侧夹在第一和第二阻挡层（103a，103d）之间; 每个量子点（103c）具有与基底层（105）凸起的凸部; 第二阻挡层（103d）中的基底层（105）侧界面（d1），以及基底层（105）中的集电极层侧和发射极层侧界面（d2，d3）具有对应于量子点（103c）的凸部的与集电体层（107）凸起的曲率（d12，d22，d23）的界面。

4. 发明授权

US06777253B2 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device 有权
标题翻译：半导体制造方法，半导体衬底的制造方法以及半导体发光器件
公开(公告)号：US06777253B2
公开(公告)日：2004-08-17
申请号：US10017389
申请日：2001-12-18
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01S5/021 , H01S5/0211 , H01S5/34333
摘要： The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of AlxGa1−xN (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of AluGavInwN (0
摘要翻译：制造半导体的方法包括以下步骤：（1）在高于室温的温度下，在衬底上生长由Al x Ga 1-x N（0 <= x <= 1）制成的第一半导体层; 和（2）在第一半导体层上生长由AluGavInwN（0

5. 发明授权

US06653662B2 Semiconductor light-emitting device, method for fabricating the same, and method for driving the same 失效
公开(公告)号：US06653662B2
公开(公告)日：2003-11-25
申请号：US09984913
申请日：2001-10-31
申请人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
发明人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
IPC分类号： H01S500
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0422 , H01S5/0625 , H01S5/0658
摘要： The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.

6. 发明授权

US6151351A Distributed feedback semiconductor laser and method for producing the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US6151351A
公开(公告)日：2000-11-21
申请号：US534959
申请日：1995-09-28
申请人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
发明人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
IPC分类号： H01L21/205 , H01S5/026 , H01S5/0625 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/323 , H01S5/343 , H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/0265 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/06256 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.
摘要翻译：在分布式反馈半导体激光器中包括InP衬底和形成在InP衬底的主表面上的多层结构，该多层结构至少包括用于发射激光的有源层和用于激光的分布反馈的周期性结构并且周期性结构包括多个半导体区域，每个半导体区域在垂直于InP衬底的主表面的方向上具有三角形横截面并且平行于分布式反馈半导体激光器的腔长度，三角形横截面朝向InP 基质。

7. 发明授权

US6090909A Uv-ray-dimerized high molecular compound, liquid crystal aligning film using above high molecular compound and liquid crystal display element using above aligning film 有权
标题翻译： Uv-二聚高分子化合物，使用上述高分子化合物的液晶取向膜和使用上述取向膜的液晶显示元件
公开(公告)号：US6090909A
公开(公告)日：2000-07-18
申请号：US244977
申请日：1999-02-04
申请人： Takashi Kato , Nobuyuki Otsuka , Hideo Sato , Shizuo Murata
发明人： Takashi Kato , Nobuyuki Otsuka , Hideo Sato , Shizuo Murata
IPC分类号： C08G81/00 , C09K19/30 , C09K19/42 , C09K19/46 , G02F1/1337 , C08G69/26 , C08G69/42 , C08G73/00 , C08G75/00
CPC分类号： C09K19/46 , C09K19/3001 , C09K19/42 , G02F1/133723 , G02F1/133788
摘要： Disclosed is an aligning film having good liquid crystal orientation, which can be obtained by irradiating polyimide comprising N-(2-(3,5-diaminobenzoyl)oxyethyl)-.alpha.-phenylmaleimide and 1,2,3,4-cyclobutanetetracarboxylic dihydride with polarized UV-rays without employing such methods as rubbing treatment and oblique deposition.
摘要翻译：公开了具有良好的液晶取向的取向膜，其可以通过将包含N-（2-（3,5-二氨基苯甲酰基）氧乙基）-α-苯基马来酰亚胺和1,2,3,4-环丁烷四羧酸二氢化物的聚酰亚胺紫外线不使用摩擦处理和倾斜沉积等方法。

8. 发明授权

US5764682A Distributed feedback semiconductor laser and method for fabricating the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US5764682A
公开(公告)日：1998-06-09
申请号：US606455
申请日：1996-02-23
申请人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
发明人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： H01L21/00 , H01S5/12 , H01S5/34 , H01S3/19
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/2022 , H01S5/3403 , H01S5/3428 , H01S5/3434 , Y10S148/095
摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
摘要翻译：一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域。光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

9. 发明授权

US5621747A Multi quantum well semiconductor laser and optical communication system using the same 失效
标题翻译：多量子阱半导体激光器和光通信系统使用相同
公开(公告)号：US5621747A
公开(公告)日：1997-04-15
申请号：US366027
申请日：1994-12-29
申请人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui
发明人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui
IPC分类号： H01S5/062 , H01S5/12 , H01S5/34 , H01S5/343 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/3434 , H01S2301/06 , H01S2302/00 , H01S5/06226 , H01S5/3407 , H01S5/34306
摘要： A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 .mu.m to 1.33 .mu.m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 .mu.m.
摘要翻译：多量子阱半导体激光器包括InP衬底和形成在InP衬底上的多层结构，激光在1.29μm至1.33μm波长处，其中多层结构至少包括多量子阱活性层，包括InGaAsP阱层和InGaAsP势垒层的多量子阱有源层交替设置，InGaAsP势垒层与InP衬底晶格匹配，并且InGaAsP势垒层的带隙波长基本上等于1.05μm。

10. 发明授权

US4196598A Apparatus for prevention of the removal of a universal joint 失效
标题翻译：用于防止万向节拆卸的装置
公开(公告)号：US4196598A
公开(公告)日：1980-04-08
申请号：US919749
申请日：1978-06-27
申请人： Seiichi Hirai , Nobuyuki Otsuka
发明人： Seiichi Hirai , Nobuyuki Otsuka
IPC分类号： F16D3/20 , F16D3/205 , F16D3/227 , F16D3/84 , F16D3/30
CPC分类号： F16D3/845 , F16D3/2055 , F16D3/227 , F16D2003/22316
摘要： The apparatus prevents the unintentional removal of a universal joint of the type where a tubular outer member is provided on an end portion of a shaft. In this structure, plural longitudinal directional sliding grooves are arranged in parallel one with another and an inner member provided on an end portion of another shaft is provided with plural spherical surface members. These may be spherical surface rollers, balls or the like. The respective spherical surface members are in slidable engagement with associated sliding grooves. An open end of the outer member has an annular closure member and is provided with concave portions facing the respective spherical surface members in the sliding grooves. The inner surfaces are formed into spherical surfaces substantially in conformity with the spherical surfaces of the spherical surface members.
摘要翻译：该装置防止无意地移除在轴的端部上设置有管状外部构件的类型的万向接头。在这种结构中，多个纵向方向滑动槽彼此平行地布置，并且设置在另一个轴的端部上的内部构件设置有多个球形构件。这些可以是球面滚子，球等。相应的球形表面构件可与相关联的滑动槽滑动接合。外部构件的开口端具有环形闭合构件，并且在滑动槽中设置有面对各个球形构件的凹部。内表面形成为与球面部件的球面大致一致的球面。

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