专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07521000B2 Process for etching photomasks 有权
标题翻译：蚀刻光掩模的工艺
公开(公告)号：US07521000B2
公开(公告)日：2009-04-21
申请号：US10925887
申请日：2004-08-25
申请人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
发明人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
IPC分类号： C03C15/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

22. 发明申请

US20060257946A1 Serum biomarkers in ischaemic heart disease 审中-公开
标题翻译：缺血性心脏病血清生物标志物
公开(公告)号：US20060257946A1
公开(公告)日：2006-11-16
申请号：US10559687
申请日：2004-06-04
申请人： Jian Ding , Lee Lomas
发明人： Jian Ding , Lee Lomas
IPC分类号： G01N33/542 , G01N33/53
CPC分类号： G01N33/6887 , G01N33/6893 , G01N2333/4724 , G01N2333/75 , G01N2800/324
摘要： Certain biomarkers and biomarker combinations are useful in a qualifying ischaemic heart disease status in a patient. A diagnostic methodology employing these biomarkers and combinations can distinguish between ischaemic heart disease and normal, as well as between cases of severe myocardial infarction versus mild myocardial infarction.
摘要翻译：某些生物标志物和生物标志物组合在患者的合格缺血性心脏病状态中是有用的。使用这些生物标志物和组合的诊断方法可以区分缺血性心脏病和正常，以及严重心肌梗死与轻度心肌梗死的病例。

23. 发明申请

US20050207569A1 Methods and apparatus for preparing data for encrypted transmission 审中-公开
标题翻译：用于准备加密传输数据的方法和装置
公开(公告)号：US20050207569A1
公开(公告)日：2005-09-22
申请号：US11016479
申请日：2004-12-16
申请人： Ji Zhang , Hain-Ching Liu , Jian Ding
发明人： Ji Zhang , Hain-Ching Liu , Jian Ding
IPC分类号： H04L29/06 , H04N7/167 , H04N7/24 , H04L9/00
CPC分类号： H04L29/06 , H04L29/06027 , H04L63/0428 , H04L65/4084 , H04L65/607 , H04L65/80 , H04N21/23476 , H04N21/6373
摘要： Methods and apparatus for preparing data for encrypted transmission. According to the current invention, a data bitstream may be processed to create side information. After extracting, generating and/or acquiring the side data, some or all of the data bitstream may be encrypted and then combined to create a combined data bitstream, ready for transmission. Subsequently, the combined data bitstream may be transmitted over a network. By processing a data bitstream to extract metadata about the bitstream before encrypting the data, some processing such as splicing, bit rate switching and/or statistical multiplexing done after encryption may be executed without requiring costly de-encryption/re-encryption steps based, in part, on inspecting the contents of the side data. The bitstream may represent video, audio, image or other data types. In some examples according to the current invention, a combined data bitstream may comprise multiple bitstreams, each at a different bit rate.
摘要翻译：用于准备加密传输数据的方法和装置。根据本发明，可以处理数据比特流以创建边信息。在提取，生成和/或获取边数据之后，可以对数据比特流中的一些或全部进行加密，然后组合以产生准备传输的组合数据比特流。随后，组合的数据比特流可以通过网络传输。通过处理数据比特流以在加密数据之前提取关于比特流的元数据，可以在不需要昂贵的去加密/重新加密步骤的情况下执行加密之后完成的诸如拼接，比特率切换和/或统计多路复用的一些处理，部分，检查边数据的内容。比特流可以表示视频，音频，图像或其他数据类型。在根据本发明的一些示例中，组合数据比特流可以包括多个比特流，每个比特流以不同的比特率。

24. 发明授权

US06887895B2 Pseudolaric acid-B derivatives, their preparation and pharmaceutical compositions 失效
标题翻译：假酸B衍生物，其制备方法和药物组合物
公开(公告)号：US06887895B2
公开(公告)日：2005-05-03
申请号：US10486880
申请日：2002-08-14
申请人： Jianmin Yue , Shengping Yang , Jian Ding , Dong Xiao , Shengtao Yuan
发明人： Jianmin Yue , Shengping Yang , Jian Ding , Dong Xiao , Shengtao Yuan
IPC分类号： C07D493/08 , A61K31/365 , A61K31/366 , A61P9/00 , A61P17/00 , A61P31/10 , A61P35/00 , A61P35/04 , C07B61/00 , C07D311/94 , C07D311/78
CPC分类号： A61K31/365 , C07D311/94
摘要： The invention relates to pseudolaric acid-B derivatives of general formula (I), wherein (a) R1 is cyano, heterocyclyl, COXR′ or CON(R″)2, wherein X is O or NH, R′ is H, cycloalkyl, alkyl, heterocyclic alkyl or arylalkyl, each R″ is independently alkyl, cycloalkyl or heterocyclicalkyl; (b) R2 is H, alkylacyl, arylalkylacyl, arylacyl or heterocyclylacyl; (c) R3 is COXY, amino or halogen, wherein X is O or NH, Y is H, NH2, hydroxy, alkyl, cycloalkyl, heterocyclicalkyl, hetroatom-substituted alkyl, tertiary amino-substituted ammonioalkyl, aryl, arylalkyl or polyhydroxyalkyl. The invention also relates to processes for preparing such derivatives and antitumor or antifungal pharmaceutical compositions containing the same.
摘要翻译：本发明涉及通式（I）的假极酸-B衍生物，其中（a）R 1是氰基，杂环基，COXR'或CON（R“）2 其中X是O或NH，R'是H，环烷基，烷基，杂环烷基或芳烷基，每个R“独立地是烷基，环烷基或杂环烷基; （b）R 2是H，烷基酰基，芳基烷基酰基，芳基酰基或杂环基酰基; （c）R 3是COXY，氨基或卤素，其中X是O或NH，Y是H，NH 2，羟基，烷基，环烷基，杂环烷基，杂原子 - 取代的烷基，叔氨基取代的氨基烷基，芳基，芳烷基或聚羟烷基。本发明还涉及制备此类衍生物的方法和含有该衍生物的抗肿瘤或抗真菌药物组合物。

25. 发明授权

US06818140B2 Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程
公开(公告)号：US06818140B2
公开(公告)日：2004-11-16
申请号：US10002397
申请日：2001-10-31
申请人： Jian Ding
发明人： Jian Ding
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.
摘要翻译：一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料包括氟清除剂前体材料。优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

26. 发明授权

US06183655B2 Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon 失效
标题翻译：使用氟丙烯和氢氟烃选择性地蚀刻氧化物的可调谐方法
公开(公告)号：US06183655B2
公开(公告)日：2001-02-06
申请号：US09049862
申请日：1998-03-27
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： C03C2568
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料的高选择性并且不产生蚀刻停止的自对准接触蚀刻或其它高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烯（C 3 F 6）是主要的蚀刻气体，并且至少部分地由于其聚合物形成能力而添加另一种氢氟烃，例如CH 2 F 2或C 3 H 2 F 6，这增加了蚀刻氧化物对氮化物的选择性。工艺气体还包括大量惰性气体如氩气。工艺气体混合物可以在有效蚀刻气体和聚合物成型剂之间以比例平衡，以优于其它材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

27. 发明授权

US6126836A Centrifugal flotation cell with rotating feed 失效
标题翻译：具有旋转进料的离心浮选槽
公开(公告)号：US6126836A
公开(公告)日：2000-10-03
申请号：US290371
申请日：1999-04-12
申请人： Jian Ding , Wan-Tai Yen , Alan R. Pindred
发明人： Jian Ding , Wan-Tai Yen , Alan R. Pindred
IPC分类号： B01D21/00 , B03D1/14 , B04B11/06 , B01D21/26
CPC分类号： B04B11/06 , B03D1/1418 , B03D1/1462 , B03D1/247 , B03D1/1412 , B03D2203/02
摘要： A superb centrifugal flotation cell with a rotating feed, is provided for use in an effective separation process to rapidly recover greater quantities of valuable fine particles. In the process, a slurry of fine particles is injected with air bubbles and moved downwardly through a stationary pipe and a rotating feed line comprising a centrifugal rotating downfeeder. The slurry is centrifugally discharged from the rotating downfeeder into the flotation chamber where the slurry is separated into a waste stream of non-floating gangue material and a particulate-enriched froth comprising air bubbles carrying a substantial amount of the valuable fine particles for further processing.
摘要翻译：提供具有旋转进料的超级离心浮选槽，用于有效的分离过程，以快速回收更多量的有价值的微粒。在此过程中，细小颗粒的浆料被注入气泡并向下移动通过固定管和包括离心旋转的下进料器的旋转进料管。将浆料从旋转的下进料器离心排放到浮选室中，其中浆料被分离成非浮动脉石材料的废物流和含有大量有用的细颗粒的气泡的颗粒富集泡沫用于进一步处理。

28. 发明授权

US5539609A Electrostatic chuck usable in high density plasma 失效
公开(公告)号：US5539609A
公开(公告)日：1996-07-23
申请号：US137279
申请日：1993-10-14
申请人： Kenneth S. Collins , John R. Trow , Joshua C.-W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
发明人： Kenneth S. Collins , John R. Trow , Joshua C.-W. Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

29. 发明授权

US5491603A Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer 失效
标题翻译：确定脱扣电压的方法，其消除静电卡盘和晶片之间的剩余静电力
公开(公告)号：US5491603A
公开(公告)日：1996-02-13
申请号：US235012
申请日：1994-04-28
申请人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
发明人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
IPC分类号： B23Q3/15 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： The invention is embodied in a method of determining an optimum de-chucking voltage for nullifying residual electrostatic forces on a wafer in an electrostatic chuck for removal of the wafer from the chuck, including holding the wafer on the electrostatic chuck by applying an electrostatic potential to the chuck, introducing a gas between the wafer and the chuck, reducing the electrostatic potential of the chuck while observing a rate of leakage of the gas from between the wafer and the chuck, and recording as the optimum dechucking voltage the value of the electrostatic potential obtaining when the rate of leakage exceeds a predetermined threshold.
摘要翻译：本发明体现于一种确定最佳去夹紧电压的方法，用于使静电卡盘中的晶片上的残留静电力无效，从卡盘移除晶片，包括通过施加静电电位将晶片保持在静电卡盘上卡盘，在晶片和卡盘之间引入气体，同时观察卡盘的气体泄漏速率，同时减小卡盘的静电电位，并记录最佳的脱扣电压为静电电位值当泄漏速率超过预定阈值时获得。

30. 发明授权

US10729743B2 Composition comprising an algal proteoglycan extract and use thereof 有权
公开(公告)号：US10729743B2
公开(公告)日：2020-08-04
申请号：US16071020
申请日：2017-01-20
申请人： Qing Qi , Jian Ding
发明人： Qing Qi , Jian Ding
IPC分类号： A61K36/02 , A61K38/16 , A61P35/00 , A61K9/00 , A61K31/282 , A61K31/513 , A61K31/675 , A61K31/704 , A61K31/7048 , A61K35/748 , A61K45/06
摘要： Use of an algal proteoglycan extract and a composition comprising the same in the manufacture of a medicament for treating or preventing tumor, pain, inflammation or diseases mediated by inflammatory factors.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式