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21. 发明授权

US07245019B2 Semiconductor device with improved wiring arrangement utilizing a projecting portion and a method of manufacturing the same 有权
标题翻译：具有利用突出部分的改进的布线布置的半导体器件及其制造方法
公开(公告)号：US07245019B2
公开(公告)日：2007-07-17
申请号：US10647373
申请日：2003-08-26
申请人： Tomoo Murata , Shinobu Yabuki , Takeo Yamashita
发明人： Tomoo Murata , Shinobu Yabuki , Takeo Yamashita
IPC分类号： H01L23/52
CPC分类号： H01L27/118 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device having a first wiring extending in a first direction and a second wiring connected to the first wiring through a connection and extending in a second direction orthogonal to the first direction, the second wiring having a surplus portion projecting from the connection in a direction opposite to the second direction, the first and second wirings are arranged such that a center of the connection is offset in the second direction from a center of the first wiring, and a projecting portion of the first wiring is disposed under the connection.
摘要翻译：在制造具有沿第一方向延伸的第一布线的半导体器件的方法和通过连接与第一布线连接并沿与第一方向正交的第二方向延伸的第二布线的方法中，第二布线具有从在与第二方向相反的方向上的连接中，第一和第二布线布置成使得连接的中心在距第一布线的中心的第二方向偏移，并且第一布线的突出部分设置在连接。

22. 发明授权

US06870697B2 Overshoot current phase/amplitude control for hard disk drive write current 失效
标题翻译：过冲电流相位/幅度控制硬盘驱动器写入电流
公开(公告)号：US06870697B2
公开(公告)日：2005-03-22
申请号：US10457473
申请日：2003-06-10
申请人： Hiroshi Ikekame , Takeo Yamashita
发明人： Hiroshi Ikekame , Takeo Yamashita
IPC分类号： G11B5/09 , G11B5/00 , G11B5/012 , G11B5/02 , G11B20/10
CPC分类号： G11B5/012 , G11B5/02 , G11B20/10009 , G11B2005/0013
摘要： Devices and methods for generating a magnetic head-specific overshoot current which is combined with an alternating current waveform into a write current used by the magnetic head to store information on a magnetic medium. A processor analyzes the frequency of incoming write data and retrieves from a data table of an overshoot current amplitude and an overshoot current phase. This amplitude and phase information is sent to an overshoot current generator to generate an overshoot current that is responsive to the dynamic impedance properties of a magnetic write head during operation. The data table may have information related to one or many write heads, and the data table may be further subdivided based on additional dynamic characteristics of a write head that may affect the impedance thereof.
摘要翻译：用于产生磁头特定过冲电流的装置和方法，其将交流电波组合成由磁头用于在磁介质上存储信息的写入电流。处理器分析输入写入数据的频率，并从数据表中检索过冲电流幅度和过冲电流相位。该幅度和相位信息被发送到过冲电流发生器以产生响应于操作期间磁写头的动态阻抗特性的过冲电流。数据表可以具有与一个或多个写入头相关的信息，并且可以基于可能影响其阻抗的写入头的附加动态特性来进一步细分数据表。

23. 发明授权

US6146135A Oxide film forming method 失效
公开(公告)号：US6146135A
公开(公告)日：2000-11-14
申请号：US680519
申请日：1996-07-09
申请人： Jinzo Watanabe , Takeo Yamashita , Masakazu Nakamura , Shintaro Aoyama , Hidetoshi Wakamatsu , Tadashi Shibata , Tadahiro Ohmi , Nobuhiro Konishi , Mizuho Morita , Hisayuki Shimada , Takashi Imaoka
发明人： Jinzo Watanabe , Takeo Yamashita , Masakazu Nakamura , Shintaro Aoyama , Hidetoshi Wakamatsu , Tadashi Shibata , Tadahiro Ohmi , Nobuhiro Konishi , Mizuho Morita , Hisayuki Shimada , Takashi Imaoka
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66 , F26B21/00 , F26B3/00 , F26B19/00
CPC分类号： C30B23/02 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C23C8/10 , C23C8/36 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are movable among them, and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.

24. 发明授权

US6051851A Semiconductor devices utilizing silicide reaction 失效
标题翻译：利用硅化物反应的半导体器件
公开(公告)号：US6051851A
公开(公告)日：2000-04-18
申请号：US917675
申请日：1997-08-26
申请人： Tadahiro Ohmi , Mamoru Miyawaki , Yoshio Nakamura , Hiroshi Suzuki , Takeo Yamashita
发明人： Tadahiro Ohmi , Mamoru Miyawaki , Yoshio Nakamura , Hiroshi Suzuki , Takeo Yamashita
IPC分类号： H01L21/82 , G11C17/16 , H01L23/525 , H01L27/10 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/112 , G11C17/16 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/3011
摘要： Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the pair of conductors is made of a metal, and the semiconductor layer comprises an amorphous silicon that can form a silicide region with the metal as reacting at a reaction rate of not less than 10 m/sec. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is made of a metal silicide-reacting with the amorphous silicon, and in that the silicide region formed is conic. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is formed of a metal silicide-reacting with the amorphous silicon, and in that a film-formed surface is produced without being exposed to an oxide atmosphere, between a step of forming the amorphus silicon and a step of forming the metal.
摘要翻译：提供廉价的半导体存储器件，以便能够进行高速写入和读取，但很少发生故障，因此可靠性高。在包括多个单元的半导体器件中，每个单元各自在一对导体之间具有半导体层，所述一对导体中的至少一个导体由金属制成，并且所述半导体层包括可形成硅化物区域的非晶硅，金属以不小于10m /秒的反应速率反应。另一种器件的特征在于，半导体层是非晶硅，其中该对导体中的至少一个导体由与非晶硅反应的金属硅化物制成，并且形成的硅化物区域是圆锥形。另一种器件的特征在于，半导体层是非晶硅，其中该对导体中的至少一个导体由与非晶硅反应的金属硅化物形成，并且由此形成膜形成表面而不暴露在氧化物气氛之间，形成无定形硅的步骤和形成金属的步骤。

25. 发明授权

US5822497A Data sorting circuit 失效
标题翻译：数据分类电路
公开(公告)号：US5822497A
公开(公告)日：1998-10-13
申请号：US507467
申请日：1995-09-29
申请人： Tadahiro Ohmi , Tadashi Shibata , Takeo Yamashita
发明人： Tadahiro Ohmi , Tadashi Shibata , Takeo Yamashita
IPC分类号： G06F7/02 , G06F7/24 , G06G7/60 , G06N3/063 , G11C15/04 , H01L27/10 , H03K19/00 , H03K19/0948 , G06F15/18
CPC分类号： G06F7/24 , G06N3/0635
摘要： A device comprising invertor circuit group including two or more invertor circuits formed by neuron MOS transistors; means for applying a first signal voltage common to the two or more invertors of the invertor circuit group to a first input gate of the invertor circuit; means for applying a given second signal to one or more second input gates other than the first input gate of the invertor circuits; a delay circuit for transmitting the variation of the output voltage of at least one of the invertor circuits of the invertor circuit group with a time delay generated by used of the variation with time of the signal voltage of either or both of the first and second signal voltages; a transistor whose ON and OFF is controlled by the signal transmitted from the delay circuit; storage circuits taking in signals by the ON and OFF of the transistor; and means for executing a given logical operation with respect to the output voltage signals generated by the invertor circuit group. The device has a function of storing the result of the logical operation in the storage circuit.
摘要翻译： PCT No.PCT / JP94 / 00262 Sec。 371 1995年9月29日第 102（e）1995年9月29日PCT PCT 1994年2月22日PCT公布。公开号WO94 / 19760 日期1994年9月1日包括由神经元MOS晶体管形成的包括两个或更多个反相器电路的逆变器电路组的器件; 用于将所述逆变器电路组的两个或更多个反相器公共的第一信号电压施加到所述逆变器电路的第一输入门的装置; 用于将给定的第二信号施加到除了逆变器电路的第一输入门之外的一个或多个第二输入门的装置; 延迟电路，用于通过使用随着第一和第二信号中的任一个或第二信号的信号电压的时间的变化而产生的时间延迟来发送反相器电路组的至少一个反相器电路的输出电压的变化电压; 晶体管的ON和OFF由从延迟电路发送的信号控制; 存储电路通过晶体管的导通和截止来接收信号; 以及用于对由逆变器电路组产生的输出电压信号执行给定逻辑运算的装置。该装置具有将逻辑运算的结果存储在存储电路中的功能。

26. 发明授权

US08443840B2 Excessive pressure release valve and release valve unit having the release valve 失效
标题翻译：具有释放阀的过大的释压阀和释放阀单元
公开(公告)号：US08443840B2
公开(公告)日：2013-05-21
申请号：US12450006
申请日：2008-02-14
申请人： Masashi Nemoto , Yukio Yaginuma , Takeo Yamashita
发明人： Masashi Nemoto , Yukio Yaginuma , Takeo Yamashita
IPC分类号： F16K15/14
CPC分类号： H01M2/1229 , H01M2/1294 , H01M8/02 , H01M8/04082 , H01M8/04201 , H01M8/2465 , Y10T137/7879 , Y10T137/7881 , Y10T137/7888
摘要： Provided is a small, simple-structured, homogeneous and mass-producible excessive pressure release valve which works even at a relatively low excessive pressure to surely and safely release the pressure to the external world. The excessive pressure release valve has an elastic rubber plate and a reversibly openable slit that passes through the upper and the lower surfaces and release the pressure to the external world when the internal excessive pressure stressing on the lower side surface, pushes and opens the slit toward upper surface side. The elastic rubber plate is made of silicone rubber containing 1-20% by mass of silicone oil.
摘要翻译：提供了一种小型，简单结构，均质和大量生产的过压释放阀，即使在相对较低的过压下也可以安全地释放对外界的压力。过压式释放阀具有弹性橡胶板和可逆地打开的狭缝，其通过上表面和下表面，并且当在下侧表面上的内部过度压力应力时将压力释放到外部世界，将狭缝朝向上表面。弹性橡胶板由含有1-20质量％的硅油的硅橡胶制成。

27. 发明申请

US20100246078A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：半导体集成电路设备
公开(公告)号：US20100246078A1
公开(公告)日：2010-09-30
申请号：US12685009
申请日：2010-01-11
申请人： Yoshiyuki UTAGAWA , Takeo Yamashita
发明人： Yoshiyuki UTAGAWA , Takeo Yamashita
IPC分类号： H02H9/00
CPC分类号： H03F3/45475 , H01L27/0255 , H03F1/52 , H03F2200/444
摘要： A semiconductor integrated circuit device supports maintenance of a signal transfer frequency and waveform quality and electrostatic protection, and also suppresses expansion of a chip area. In order to maintain the signal transfer frequency and the waveform quality as well as to keep an effect of the electrostatic protection, and simultaneously to protect a differential input pair by a single electrostatic protection element and to attain area superiority, the electrostatic protection element that is arbitrarily separable is disposed at a middle point of a terminator.
摘要翻译：半导体集成电路器件支持维持信号传输频率和波形质量和静电保护，并且还抑制芯片面积的扩大。为了保持信号传输频率和波形质量以及保持静电保护的效果，并且同时通过单个静电保护元件保护差分输入对并且获得区域优势，即静电保护元件任意可分离地设置在终止器的中点处。

28. 发明申请

US20100032039A1 Excessive Pressure Release Valve And Release Valve Unit Having The Release Valve 失效
标题翻译：释放阀过大的释压阀和释放阀单元
公开(公告)号：US20100032039A1
公开(公告)日：2010-02-11
申请号：US12450006
申请日：2008-02-14
申请人： Masashi Nemoto , Yukio Yaginuma , Takeo Yamashita
发明人： Masashi Nemoto , Yukio Yaginuma , Takeo Yamashita
IPC分类号： F16K15/14
CPC分类号： H01M2/1229 , H01M2/1294 , H01M8/02 , H01M8/04082 , H01M8/04201 , H01M8/2465 , Y10T137/7879 , Y10T137/7881 , Y10T137/7888
摘要： Provided is a small, simple-structured, homogeneous and mass-producible excessive pressure release valve which works even at a relatively low excessive pressure to surely and safely release the pressure to the external world. The excessive pressure release valve has an elastic rubber plate and a reversibly openable slit that passes through the upper and the lower surfaces and release the pressure to the external world when the internal excessive pressure stressing on the lower side surface, pushes and opens the slit toward upper surface side. The elastic rubber plate is made of silicone rubber containing 1-20% by mass of silicone oil.
摘要翻译：提供了一种小型，简单结构，均质和大量生产的过压释放阀，即使在相对较低的过压下也可以安全地释放对外界的压力。过压式释放阀具有弹性橡胶板和可逆地打开的狭缝，其通过上表面和下表面，并且当在下侧表面上的内部过度压力应力时将压力释放到外部世界，将狭缝朝向上表面。弹性橡胶板由含有1-20质量％的硅油的硅橡胶制成。

29. 发明授权

US07154687B2 Overshoot current phase/amplitude control for hard disk drive write current 失效
公开(公告)号：US07154687B2
公开(公告)日：2006-12-26
申请号：US11041228
申请日：2005-01-25
申请人： Hiroshi Ikekame , Takeo Yamashita
发明人： Hiroshi Ikekame , Takeo Yamashita
IPC分类号： G11B5/09
CPC分类号： G11B5/012 , G11B5/02 , G11B20/10009 , G11B2005/0013
摘要： Devices and methods for generating a magnetic head-specific overshoot current which is combined with an alternating current waveform into a write current used by the magnetic head to store information on a magnetic medium. A processor analyzes the frequency of incoming write data and retrieves from a data table of an overshoot current amplitude and an overshoot current phase. This amplitude and phase information is sent to an overshoot current generator to generate an overshoot current that is responsive to the dynamic impedance properties of a magnetic write head during operation. The data table may have information related to one or many write heads, and the data table may be further subdivided based on additional dynamic characteristics of a write head that may affect the impedance thereof.

30. 发明授权

US06949478B2 Oxide film forming method 失效
标题翻译：氧化膜成型方法
公开(公告)号：US06949478B2
公开(公告)日：2005-09-27
申请号：US10120628
申请日：2002-04-11
申请人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
发明人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66 , H01L21/31
CPC分类号： C30B23/02 , C23C8/10 , C23C8/36 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles.
摘要翻译：使用带电粒子在超清洁环境下进行形成具有高绝缘性的氧化膜的方法。

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