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21. 发明授权

US07384867B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07384867B2
公开(公告)日：2008-06-10
申请号：US11206491
申请日：2005-08-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

22. 发明授权

US07605083B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07605083B2
公开(公告)日：2009-10-20
申请号：US12128499
申请日：2008-05-28
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
摘要翻译：本发明的实施例提供了沉积钨材料的方法。在一个实施例中，提供了一种用于形成复合钨膜的方法，其包括将衬底定位在处理室内，通过在循环中随后将衬底暴露于钨前体和含氢的还原气体，在衬底上形成钨成核层沉积工艺，以及在等离子体增强化学气相沉积（PE-CVD）工艺期间形成钨体层。 PE-CVD工艺包括将衬底暴露于含有钨前体的沉积气体，同时在钨成核层上沉积钨体层。在一些实例中，钨成核层的厚度小于约，例如约为15。在其他实例中，在循环沉积过程中，含有氢气的载气不断地流入处理室。

23. 发明授权

US07846840B2 Method for forming tungsten materials during vapor deposition processes 有权
公开(公告)号：US07846840B2
公开(公告)日：2010-12-07
申请号：US12645117
申请日：2009-12-22
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

24. 发明申请

US20100093170A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20100093170A1
公开(公告)日：2010-04-15
申请号：US12645117
申请日：2009-12-22
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/3205
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

25. 发明授权

US06855368B1 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
标题翻译：控制难熔金属层中氟的存在的方法和系统
公开(公告)号：US06855368B1
公开(公告)日：2005-02-15
申请号：US09625336
申请日：2000-07-25
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/285 , H01L21/768 , B05D5/12 , H01L21/00
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.
摘要翻译：通过控制其中所含的氟的存在来降低难熔金属层的电阻的方法和系统。本发明基于以下发现：当采用ALD技术在基底上形成难熔金属层时，所用载体会影响所得层中氟的存在。结果，该方法具有化学吸附到底物上的第一化合物和第二化合物的交替单层，第二化合物具有与之有关的氟原子，其中第一和第二化合物中的每一个与所述第一和第二化合物一起被引入处理室，连同用于控制与第二化合物的单层相关的氟原子的量的载气。

26. 发明授权

US06729824B2 Dual robot processing system 失效
标题翻译：双机器人处理系统
公开(公告)号：US06729824B2
公开(公告)日：2004-05-04
申请号：US10017039
申请日：2001-12-14
申请人： Lawrence C. Lei , Moris Kori
发明人： Lawrence C. Lei , Moris Kori
IPC分类号： B65G4907
CPC分类号： H01L21/67184 , H01L21/67126 , H01L21/67201 , H01L21/67742 , H01L21/67745 , H01L21/67748 , Y10S414/139
摘要： A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.
摘要翻译：通常提供具有传送室的基板处理系统，该传送室具有两个处理室和与其连接的两个加载锁定室。传送室包括在中心轴线的任一侧上具有限定在其中的第一传送区域和第二传送区域的主体。第一通道将负载锁中的一个与第一传送区域耦合，并且第二通道将另一个负载锁与第二传送区域耦合。第一通道和第二通道围绕中心轴线形成锐角。传送平台设置在第一传送区域和第二传送区域之间。第一传送机器人和第二传送机器人分别设置在第一传送区域和第二传送区域中。每个机器人适于在负载锁，转移平台和处理室之间传送衬底。

27. 发明授权

US6040011A Substrate support member with a purge gas channel and pumping system 失效
标题翻译：衬底支撑构件，具有吹扫气体通道和泵送系统
公开(公告)号：US6040011A
公开(公告)日：2000-03-21
申请号：US103462
申请日：1998-06-24
申请人： Joseph Yudovsky , Moris Kori
发明人： Joseph Yudovsky , Moris Kori
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/683 , H01L21/687 , C23C16/06
CPC分类号： C23C16/45521 , C23C16/4412 , C23C16/4585 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： The present invention discloses susceptor used in vacuum CVD chambers which provides a purge gas delivery and removal system that inhibits the deposition of process gas on the edge and back side of a substrate, while providing access to the entire surface of the substrate for processing. The susceptor has a substrate receiving surface having a perimeter. A purge gas such as argon is passed over the perimeter of the surface using a purge gas system having an inlet disposed adjacent to the substrate receiving surface. The purge gas is removed by a pump system having an outlet disposed adjacent to the substrate receiving surface.
摘要翻译：本发明公开了一种在真空CVD室中使用的基座，其提供了一种吹扫气体输送和去除系统，该系统抑制工艺气体沉积在衬底的边缘和背面，同时提供对衬底的整个表面的接近进行处理。基座具有具有周边的基板接收表面。诸如氩气的吹扫气体使用具有邻近基板接收表面设置的入口的吹扫气体系统在表面周界上通过。通过具有邻近基板接收表面设置的出口的泵系统去除吹扫气体。

28. 发明授权

US5709772A Non-plasma halogenated gas flow to prevent metal residues 失效
标题翻译：非等离子体卤化气体流动，防止金属残留
公开(公告)号：US5709772A
公开(公告)日：1998-01-20
申请号：US625485
申请日：1996-03-29
申请人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
发明人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/302 , H01L21/3065 , H01L21/306 , C23F1/00
CPC分类号： C23C16/52 , C23C16/02 , C23C16/4405
摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.
摘要翻译：一种用于限制半导体制造工艺中的金属蚀刻后剩余残留物的装置和方法，其中将不含等离子体的含卤素气体注入到处理室中。然后在金属沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体的残留物。曝光可能发生在与金属沉积相同的室中，或者在不同的室中。晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

29. 发明授权

US06070599A Non-plasma halogenated gas flow to prevent metal residues 失效
标题翻译：非等离子体卤化气体流动，防止金属残留
公开(公告)号：US06070599A
公开(公告)日：2000-06-06
申请号：US942582
申请日：1997-10-02
申请人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
发明人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/302 , H01L21/3065 , B08B3/12
CPC分类号： C23C16/52 , C23C16/02 , C23C16/4405
摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.
摘要翻译：公开了一种用于限制在半导体制造工艺中蚀刻金属后残留的残留物的设备和方法，例如通过用含卤素气体钝化晶片的表面来蚀刻钨层以形成钨插塞。在将金属层沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体。曝光可能发生在与金属沉积相同的室中，或者在不同的室中。晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

30. 发明授权

US06174373B1 Non-plasma halogenated gas flow prevent metal residues 失效
标题翻译：非等离子体卤化气体流动防止金属残留
公开(公告)号：US06174373B1
公开(公告)日：2001-01-16
申请号：US09476917
申请日：2000-01-04
申请人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
发明人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
IPC分类号： C23C1600
CPC分类号： C23C16/52 , C23C16/02 , C23C16/4405
摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.
摘要翻译：公开了一种用于限制在半导体制造工艺中蚀刻金属后残留的残留物的设备和方法，例如通过用含卤素气体钝化晶片的表面来蚀刻钨层以形成钨插塞。在将金属层沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体。曝光可能发生在与金属沉积相同的室中，或者在不同的室中。晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

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