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21. 发明申请

US20060111547A1 Bottom layer resist polymers for photolithography and methods of manufacturing the same 审中-公开
标题翻译：用于光刻的底层抗蚀剂聚合物及其制造方法
公开(公告)号：US20060111547A1
公开(公告)日：2006-05-25
申请号：US11283841
申请日：2005-11-22
申请人： Mitsuhiro Hata , Sang-gyun Woo , Yool Kang , Man-hyoung Ryoo , Hyun-woo Kim , Jung-hwan Hah
发明人： Mitsuhiro Hata , Sang-gyun Woo , Yool Kang , Man-hyoung Ryoo , Hyun-woo Kim , Jung-hwan Hah
IPC分类号： C08G64/00
CPC分类号： C08G61/12 , C08G61/02 , C08G65/4081 , G03F7/0388 , G03F7/091
摘要： In one aspect, a bottom layer resist polymer has an expanded p-electron conjugation system based on a monomer unit having a 3,3′-diindenyl structure. The bottom layer resist polymer of this aspect is composed of a repeat unit having the 3,3′-diindenyl structure represented by the following formula: where l, m and n are respective mole fractions of monomer units of the polymer, where l+m+n=1, where l=0.1 to 0.9, m=0.1 to 0.9, and n=0 to 0.8, where each of k1 and k2 is independently 0 or 1, and each of R1, R2, R3 and R4 is independently a hydrogen atom or an unsaturated hydrocarbon, and where Z is a monomer unit including a bisphenol derivative.
摘要翻译：一方面，底层抗蚀剂聚合物具有基于具有3,3'-二茚基结构的单体单元的扩展的p-电子共轭体系。该方面的底层抗蚀剂聚合物由具有下式表示的3,3'-二茚基结构的重复单元组成：其中l，m和n分别是聚合物单体单元的摩尔分数，其中l + m + n = 1，其中l = 0.1至0.9，m = 0.1至0.9，n = 0至0.8，其中k 1和k 2 2中的每一个独立地为0 或1，并且R 1，R 2，R 3和R 4中的每一个独立地为氢原子或不饱和烃，Z为包含双酚衍生物的单体单元。

22. 发明授权

US06503687B2 Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist composition 失效
标题翻译：脂环族光敏聚合物，含有它们的抗蚀剂组合物和制备抗蚀剂组合物的方法
公开(公告)号：US06503687B2
公开(公告)日：2003-01-07
申请号：US09731896
申请日：2000-12-08
申请人： Hyun-woo Kim , Si-hyueng Lee , Ki-young Kwon , Dong-won Jung , Sang-jun Choi , Sang-gyun Woo
发明人： Hyun-woo Kim , Si-hyueng Lee , Ki-young Kwon , Dong-won Jung , Sang-jun Choi , Sang-gyun Woo
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039
摘要： A photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units, a resist composition containing the photosensitive polymer and a preparation method thereof, wherein the photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl group, R2 is &ggr;-butyrolactone-2-yl, &ggr;-butyrolactone-3-yl, pantolactone-2-yl, mevalonic lactone, 3-tetrahydrofuranyl, 2,3-propylenecarbonate-1-yl or 3-methyl-&ggr;-butyrolactone-3-yl, R3 is a hydrogen atom, methyl, ethyl or C3 to C20 alicyclic hydrocarbon, and p/(p+q+r) is 0.1˜0.8, q/(p+q+r) is 0.2˜0.8, and r/(p+q+r) is 0.0˜0.4. To prepare the photosensitive polymer, at least two different norbornene-type compounds having an ester group as a substituent are reacted in the presence of an initiator at a temperature of about 120 to about 150 ° C. without a reaction catalyst.
摘要翻译：具有仅由降冰片烯型脂环族单元构成的主链的光敏性聚合物，含有感光性高分子的抗蚀剂组合物及其制备方法，其中，所述感光性聚合物由下式表示：式中，R1为酸不稳定的叔烷基 R2是γ-丁内酯-2-基，γ-丁内酯-3-基，泛酸内酯-2-基，甲羟戊酸内酯，3-四氢呋喃基，2,3-亚丙基碳酸酯-1-基或3-甲基-γ-丁内酯 - R 3为氢原子，甲基，乙基或C 3〜C 20脂环族烃，p /（p + q + r）为0.1〜0.8，q /（p + q + r）为0.2〜0.8， r /（p + q + r）为0.0〜0.4。为了制备感光性聚合物，在引发剂的存在下，在没有反应催化剂的情况下，在约120〜约150℃的温度下，使具有酯基作为取代基的至少两种不同的降冰片烯型化合物进行反应。

23. 发明授权

US5851706A Phase shift masks including chromium oxide and alumina phase shifter patterns, and methods of manufacturing and using the same 失效
标题翻译：包括氧化铬和氧化铝移相器图案的相移掩模，及其制造和使用方法
公开(公告)号：US5851706A
公开(公告)日：1998-12-22
申请号：US882719
申请日：1997-06-25
申请人： Sung-chul Lim , Sang-gyun Woo , Ho-young Kang , Kwang-soo No
发明人： Sung-chul Lim , Sang-gyun Woo , Ho-young Kang , Kwang-soo No
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G02F9/00
CPC分类号： G03F1/32 , Y10T428/24926
摘要： A half tone phase shift mask includes a substrate which is transparent with respect to exposure radiation and a phase shifter pattern on the substrate. The phase shifter pattern comprises chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3). Fine patterns can therefore be formed using phase shift masking of exposure radiation having a 193 nm wavelength, such as light from an ArF excimer laser.
摘要翻译：半色调相移掩模包括相对于曝光辐射透明的衬底和在衬底上的移相器图案。移相器图案包括氧化铬（Cr 2 O 3）和氧化铝（Al 2 O 3）。因此，可以使用具有193nm波长的曝光辐射（例如来自ArF准分子激光器的光）的相移掩蔽来形成精细图案。

24. 发明申请

US20110244374A1 Methods of Correcting Optical Parameters in Photomasks 有权
标题翻译：矫正光掩模光学参数的方法
公开(公告)号：US20110244374A1
公开(公告)日：2011-10-06
申请号：US13072993
申请日：2011-03-28
申请人： Haek-seung Han , Dong-seok Nam , Sang-gyun Woo
发明人： Haek-seung Han , Dong-seok Nam , Sang-gyun Woo
IPC分类号： G03F1/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/36 , G03F1/74
摘要： A method of correcting an optical parameter in a photomask is provided. The method includes providing a photomask, exposing the photomask, detecting an aerial image to estimate the photomask, and irradiating gas cluster ion beams to the photomask based on an estimation result to correct the optical parameter in the photomask in relation to the aerial image. The gas cluster ion beams may be irradiated to a front surface of the photomask on which a mask pattern is formed or a rear surface of the photomask on which the mask pattern is not formed.
摘要翻译：提供了一种校正光掩模中的光学参数的方法。该方法包括提供光掩模，曝光光掩模，检测空中图像以估计光掩模，以及基于估计结果将气体簇离子束照射到光掩模，以校正相对于空中图像的光掩模中的光学参数。可以将气体簇离子束照射到其上形成有掩模图案的光掩模的前表面或其上未形成掩模图案的光掩模的后表面。

25. 发明授权

US07985529B2 Mask patterns including gel layers for semiconductor device fabrication 有权
标题翻译：掩模图案包括用于半导体器件制造的凝胶层
公开(公告)号：US07985529B2
公开(公告)日：2011-07-26
申请号：US12496185
申请日：2009-07-01
申请人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
发明人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
IPC分类号： G03F7/11
CPC分类号： G03F7/40 , G03F7/023 , G03F7/0382 , G03F7/0392
摘要： Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.
摘要翻译：掩模图案包括抗蚀剂图案和抗蚀剂图案表面上的凝胶层，其具有包含质子供体聚合物和质子受体聚合物之间的氢键的连接点。还提供了形成掩模图案的方法和使用掩模图案制造半导体器件作为蚀刻掩模的方法。

26. 发明授权

US07855038B2 Mask patterns for semiconductor device fabrication and related methods and structures 失效
标题翻译：半导体器件制造的掩模图案及相关方法和结构
公开(公告)号：US07855038B2
公开(公告)日：2010-12-21
申请号：US12042625
申请日：2008-03-05
申请人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
发明人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
IPC分类号： G03F9/00
CPC分类号： H01L21/0274 , G03F7/405 , H01L21/0273 , H01L21/31144
摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.
摘要翻译：形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。还讨论了相关结构。

27. 发明申请

US20100173230A1 PHOTOMASK 失效
标题翻译：照片
公开(公告)号：US20100173230A1
公开(公告)日：2010-07-08
申请号：US12639155
申请日：2009-12-16
申请人： Myoung-soo Lee , Young-su Sung , Sang-gyun Woo
发明人： Myoung-soo Lee , Young-su Sung , Sang-gyun Woo
IPC分类号： G03F1/00
CPC分类号： G03F1/72 , G03F1/60
摘要： A photomask or equivalent optical component includes a scattering element in the medium of a substrate, which actively modifies (adjusts/filters the intensity, shape, and/or components of) light that propagates through the substrate. The substrate has a front surface and a back surface and is transparent to exposure light of a photolithography process, i.e., light of given wavelength, at least one mask pattern at the front surface of the substrate and the image of which is to be transferred to an electronic device substrate in a photolithographic process using the photomask, a blind pattern at the front surface of the substrate and opaque to the exposure light, and the scattering element. The scattering element, in addition to being formed in the medium of the substrate, is situated below the blind pattern as juxtaposed with the blind pattern in the direction of the thickness of the substrate. Also, a section of the photomask substrate is irradiated with energy which does not melt and/or vaporize the medium of the photomask substrate to form the scattering element. To this end, a femtosecond laser may be used.
摘要翻译：光掩模或等效光学部件包括在衬底的介质中的散射元件，其主动地修改（调节/滤除通过衬底传播的）光的强度，形状和/或分量）。衬底具有前表面和后表面，并且对于光刻工艺的曝光（即，给定波长的光），在衬底的前表面处的至少一个掩模图案和其图像将被转印到使用光掩模的光刻工艺中的电子器件衬底，在衬底的前表面处的盲图案和曝光光不透明的散射元件。除了形成在基板的介质中之外，散射元件位于盲模式的下方，与基板的厚度方向上的盲模式并列。另外，光掩模基板的一部分被不会熔化和/或蒸发光掩模基板的介质以形成散射元件的能量照射。为此，可以使用飞秒激光。

28. 发明授权

US07314702B2 Composition for a bottom-layer resist 失效
标题翻译：底层抗蚀剂的组成
公开(公告)号：US07314702B2
公开(公告)日：2008-01-01
申请号：US10726477
申请日：2003-12-03
申请人： Sung-ho Lee , Jin Hong , Sang-gyun Woo
发明人： Sung-ho Lee , Jin Hong , Sang-gyun Woo
IPC分类号： G03F7/00
CPC分类号： G03F7/094 , G03F7/0392 , H01L21/0271
摘要： A composition for a bottom-layer resist, having superior anti-refractivity and dry-etch resistance for use in a bi-layer resist process employing a light source at a wavelength of 193 nm or below, is disclosed. The composition for the bottom-layer resist contains a polymer represented by formula 1: In formula 1, R is hydrogen or a methyl group, m/(m+n) is about 0.5 to about 1.0 and n/(m+n) is 0 to about 0.5.
摘要翻译：公开了一种用于底层抗蚀剂的组合物，其具有优异的抗折射率和耐干蚀刻性，用于采用波长193nm或更低的光源的双层抗蚀剂工艺。底层抗蚀剂的组合物含有由式1表示的聚合物：在式1中，R为氢或甲基，m /（m + n）为约0.5至约1.0，n /（m + n）为 0〜约0.5。

29. 发明授权

US07297466B2 Method of forming a photoresist pattern and method for patterning a layer using a photoresist 有权
标题翻译：形成光致抗蚀剂图案的方法和使用光致抗蚀剂图案化层的方法
公开(公告)号：US07297466B2
公开(公告)日：2007-11-20
申请号：US10375102
申请日：2003-02-28
申请人： Sung-ho Lee , Sang-gyun Woo , Yun-sook Chae , Ji-soo Kim
发明人： Sung-ho Lee , Sang-gyun Woo , Yun-sook Chae , Ji-soo Kim
IPC分类号： G03F7/30 , G03F7/004
CPC分类号： G03F7/405 , Y10S430/108
摘要： An organic anti-reflective coating (ARC) is formed over a surface of a semiconductor substrate, and a resist layer including a photosensitive polymer is formed on the ARC. The photoresistive polymer contains a hydroxy group. The resist layer is then subjected to exposure and development to form a resist pattern. The resist pattern to then silylated to a given depth by exposing a surface of the resist pattern to a vapor phase organic silane mixture of a first organic silane compound having a functional group capable of reacting with the hydroxy group of the photoresistive polymer, and a second organic silane compound having two functional groups capable of reacting with the hydroxy group of the photoresistive polymer Then, the silylated resist pattern is thermally treated, and the organic ARC is an isotropically etched using the thermally treated resist pattern as an etching mask.
摘要翻译：在半导体衬底的表面上形成有机抗反射涂层（ARC），并且在ARC上形成包括光敏聚合物的抗蚀剂层。光致抗蚀剂聚合物含有羟基。然后对抗蚀剂层进行曝光和显影以形成抗蚀剂图案。然后通过将抗蚀剂图案的表面暴露于具有能够与光致抗蚀剂聚合物的羟基反应的官能团的第一有机硅烷化合物的气相有机硅烷混合物，然后将抗蚀剂图案甲硅烷基化至给定深度，具有能够与光致抗蚀剂聚合物的羟基反应的两个官能团的有机硅烷化合物然后，对该甲硅烷基化抗蚀剂图案进行热处理，并使用热处理抗蚀剂图案作为蚀刻掩模进行各向异性蚀刻。

30. 发明申请

US20050266646A1 Method of forming trench in semiconductor device 失效
标题翻译：在半导体器件中形成沟槽的方法
公开(公告)号：US20050266646A1
公开(公告)日：2005-12-01
申请号：US11080891
申请日：2005-03-16
申请人： Doo-hoon Goo , Si-hyeung Lee , Han-ku Cho , Sang-gyun Woo , Gi-sung Yeo
发明人： Doo-hoon Goo , Si-hyeung Lee , Han-ku Cho , Sang-gyun Woo , Gi-sung Yeo
IPC分类号： H01L21/76 , H01L21/00 , H01L21/308 , H01L21/8242 , H01L27/02
CPC分类号： H01L27/10876 , H01L21/3083 , H01L27/0207
摘要： There are provided a method of forming a trench for a recessed channel of a transistor and a layout for the same. A layout for the recessed channel according to one aspect of the present invention is formed such that an open region is extended across at least one of a first active region in a lateral direction, and also across another second active region in parallel with the first active region in a diagonal direction, and the extension is cut not to reach an isolation region between two third active regions that are in parallel with the second active region in a diagonal direction, and have noses facing each other in a longitudinal direction, and the layout includes an alignment of a plurality of open regions, which are discontinuously aligned. An etch mask is formed using the layout, and a semiconductor substrate is etched using the etch mask, and a trench for a recessed channel is formed on the active region.
摘要翻译：提供了一种形成用于晶体管的凹槽的沟槽的方法及其布局。根据本发明的一个方面的凹陷通道的布局被形成为使得开放区域跨越横向方向上的第一有源区域中的至少一个延伸，并且还跨越与第一活性物体平行的另一个第二有源区域区域，并且延伸部被切割成不能在对角线方向上到达与第二有源区域平行的两个第三有源区域之间的隔离区域，并且在纵向方向上具有彼此面对的鼻子，并且布局包括不连续对准的多个开放区域的对准。使用布局形成蚀刻掩模，并且使用蚀刻掩模蚀刻半导体衬底，并且在有源区上形成用于凹陷沟道的沟槽。

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