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    • 1. 发明授权
    • Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist composition
    • 脂环族光敏聚合物,含有它们的抗蚀剂组合物和制备抗蚀剂组合物的方法
    • US06503687B2
    • 2003-01-07
    • US09731896
    • 2000-12-08
    • Hyun-woo KimSi-hyueng LeeKi-young KwonDong-won JungSang-jun ChoiSang-gyun Woo
    • Hyun-woo KimSi-hyueng LeeKi-young KwonDong-won JungSang-jun ChoiSang-gyun Woo
    • G03F7004
    • G03F7/0045G03F7/039
    • A photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units, a resist composition containing the photosensitive polymer and a preparation method thereof, wherein the photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl group, R2 is &ggr;-butyrolactone-2-yl, &ggr;-butyrolactone-3-yl, pantolactone-2-yl, mevalonic lactone, 3-tetrahydrofuranyl, 2,3-propylenecarbonate-1-yl or 3-methyl-&ggr;-butyrolactone-3-yl, R3 is a hydrogen atom, methyl, ethyl or C3 to C20 alicyclic hydrocarbon, and p/(p+q+r) is 0.1˜0.8, q/(p+q+r) is 0.2˜0.8, and r/(p+q+r) is 0.0˜0.4. To prepare the photosensitive polymer, at least two different norbornene-type compounds having an ester group as a substituent are reacted in the presence of an initiator at a temperature of about 120 to about 150 ° C. without a reaction catalyst.
    • 具有仅由降冰片烯型脂环族单元构成的主链的光敏性聚合物,含有感光性高分子的抗蚀剂组合物及其制备方法,其中,所述感光性聚合物由下式表示:式中,R1为酸不稳定的叔烷基 R2是γ-丁内酯-2-基,γ-丁内酯-3-基,泛酸内酯-2-基,甲羟戊酸内酯,3-四氢呋喃基,2,3-亚丙基碳酸酯-1-基或3-甲基-γ-丁内酯 - R 3为氢原子,甲基,乙基或C 3〜C 20脂环族烃,p /(p + q + r)为0.1〜0.8,q /(p + q + r)为0.2〜0.8, r /(p + q + r)为0.0〜0.4。 为了制备感光性聚合物,在引发剂的存在下,在没有反应催化剂的情况下,在约120〜约150℃的温度下,使具有酯基作为取代基的至少两种不同的降冰片烯型化合物进行反应。
    • 10. 发明授权
    • Methods for forming line patterns in semiconductor substrates
    • 在半导体衬底中形成线图案的方法
    • US06803176B2
    • 2004-10-12
    • US10227067
    • 2002-08-23
    • Sang-jun ChoiYool KangJoo-tae MoonJeong-hee ChungSang-gyun Woo
    • Sang-jun ChoiYool KangJoo-tae MoonJeong-hee ChungSang-gyun Woo
    • G03F740
    • G03F7/40
    • A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
    • 一种在半导体衬底中形成精细图案的方法,其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。 自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。 在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。 将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度,并且其中发生抗蚀剂组合物中的部分交联反应。