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    • 4. 发明申请
    • SYSTEM AND METHOD OF PROVIDING SECURITY
    • 提供安全的系统和方法
    • US20080141027A1
    • 2008-06-12
    • US11832168
    • 2007-08-01
    • Ji-soo KimBo-gyeong KangHyun-jin Choi
    • Ji-soo KimBo-gyeong KangHyun-jin Choi
    • H04L9/00H04L9/32
    • H04L9/3218H04L2209/42H04L2209/80
    • A method and system for providing security between a service providing server and a user device, the system including: a user device to request a service and to transmit a packet including a first public key; an authentication server to receive the packet, to authenticate the user device based on the first public key, to generate a secret key if the user device is authenticated, and to transmit the secret key to the user device; and a service providing server to check an integrity of the user device by using information for an integrity attestation having the secret key, and to provide the service to the user device according to the integrity of the user device. When the remote integrity attestation of the user device is implemented by the service providing server, the anonymity of the user device is guaranteed and the integrity of the user device is authenticated.
    • 一种用于在服务提供服务器和用户设备之间提供安全性的方法和系统,所述系统包括:用户设备,用于请求服务并发送包括第一公共密钥的分组; 用于接收分组的认证服务器,用于基于所述第一公钥对所述用户设备进行认证,以在所述用户设备被认证时生成秘密密钥,并将所述秘密密钥发送到所述用户设备; 以及服务提供服务器,通过使用具有所述秘密密钥的完整性认证的信息来检查所述用户设备的完整性,并且根据所述用户设备的完整性向所述用户设备提供所述服务。 当由服务提供服务器实现用户设备的远程完整性认证时,保证了用户设备的匿名性,并对用户设备的完整性进行了认证。
    • 7. 发明授权
    • Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard mask
    • 使用多晶硅硬掩模制造半导体器件的方法和装置
    • US06719808B1
    • 2004-04-13
    • US09695068
    • 2000-10-25
    • Ji-soo KimTae-hyuk AhnWon-seok LeeWan-jae Park
    • Ji-soo KimTae-hyuk AhnWon-seok LeeWan-jae Park
    • H01L21302
    • H01L21/32137H01L21/31144
    • A method and apparatus for use in manufacturing a semiconductor device strips a polysilicon hard mask without damaging the layer left exposed by openings formed by using the polysilicon hard mask as an etching mask. The method includes forming a polysilicon hard mask in a pattern on a first layer to expose a portion of the first layer, dry etching the exposed portion of the first layer using the polysilicon hard mask as an etching mask to form an opening in the first layer, and thereafter removing the polysilicon hard mask by supplying an etching gas onto the polysilicon hard mask in a direction parallel to the major surface of the semiconductor substrate. The processing apparatus includes a reaction chamber including a spin chuck which supports the semiconductor substrate for rotation, a gas supply unit for supplying a process gas to the reaction chamber, a gas injection unit for injecting the process gas supplied by the gas supply unit into the reaction chamber in a direction parallel to the major surface of the semiconductor substrate, and an exhaust unit for exhausting gases from the reaction chamber.
    • 用于制造半导体器件的方法和装置剥离多晶硅硬掩模,而不会损坏通过使用多晶硅硬掩模形成的开口暴露的层作为蚀刻掩模。 该方法包括在第一层上形成图案中的多晶硅硬掩模以暴露第一层的一部分,使用多晶硅硬掩模作为蚀刻掩模干蚀刻第一层的暴露部分,以在第一层中形成开口 然后通过在多晶硅硬掩模上沿着与半导体基板的主表面平行的方向提供蚀刻气体来除去多晶硅硬掩模。 处理装置包括:反应室,包括支撑旋转用半导体基板的旋转卡盘,向反应室供给处理气体的气体供给单元,将由气体供给单元供给的处理气体注入到 反应室在与半导体基板的主表面平行的方向上,以及用于从反应室排出气体的排气单元。