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21. 发明申请

US20060092739A1 Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20060092739A1
公开(公告)日：2006-05-04
申请号：US11252627
申请日：2005-10-19
申请人： Katsuyuki Fujita , Tomoki Higashi
发明人： Katsuyuki Fujita , Tomoki Higashi
IPC分类号： G11C7/02
CPC分类号： G11C11/4097 , G11C2211/4016 , H01L27/108 , H01L27/10802 , H01L29/7841
摘要： A semiconductor memory device has memory cells each of which has a MIS type of transistor capable of setting one of two kinds of threshold potentials, reference cells used for determining data stored in the memory cells, which have the same size, shape and electrical properties as those of the memory cells, word lines connected to gates of the memory cells, reference word lines connected to gates of the reference cells, source line contacts connected to sources of the memory cells and the reference cells, and bit line contacts connected to drains of the memory cells and the reference cells, arrangement order of the source line contact, the word line and bit line contact connected to each of the memory cells is equal to arrangement order of the source line contact, the reference word line and the bit line contact connected to the reference cell corresponding to the memory cell.
摘要翻译：半导体存储器件具有存储单元，每个存储单元具有能够设置两种阈值电位之一的MIS型晶体管，用于确定存储在存储单元中的数据的参考单元，其尺寸，形状和电特性与连接到存储单元的栅极的连接到参考单元的栅极的参考字线，连接到存储单元的源极和参考单元的源极线触点以及连接到存储单元的漏极的位线触点存储单元和参考单元，源极线接触的排列顺序，连接到每个存储单元的字线和位线接触等于源极线接触，参考字线和位线接触的排列顺序连接到与存储器单元相对应的参考单元。

22. 发明授权

US06468088B1 Solid having reversibly invisible/visible thermochromic construction enclosed therein 失效
标题翻译：固体具有可逆的不可见/可见的热变色结构
公开(公告)号：US06468088B1
公开(公告)日：2002-10-22
申请号：US09698203
申请日：2000-10-30
申请人： Katsuyuki Fujita , Tsutomu Tomatsu , Nobuaki Matsunami
发明人： Katsuyuki Fujita , Tsutomu Tomatsu , Nobuaki Matsunami
IPC分类号： G09B2328
CPC分类号： C09K9/02 , B41M5/305
摘要： A solid has a reversibly invisible/visible thermochromic internal construction enclosed therein which is composed of a solid made of a transparent resin and a fluorescent internal construction showing the internal structure of the solid enclosed therein, wherein a reversible thermochromic layer containing a reversible thermochromic composition is formed on the surface of the solid, or the transparent resin contains a reversible thermochromic composition.
摘要翻译：固体具有包含在其中的可逆的不可见/可见的热变色内部结构，其由透明树脂制成的固体和显示固体的内部结构的荧光内部结构组成，其中包含可逆热变色组合物的可逆热变色层为形成在固体的表面上，或透明树脂含有可逆的热变色组合物。

23. 发明授权

US5879438A Method for improving light-fastness of reversible thermochromic compositions at the time of color extinguishment 失效
标题翻译：在熄灭时提高可逆热变色组合物的耐光性的方法
公开(公告)号：US5879438A
公开(公告)日：1999-03-09
申请号：US791420
申请日：1997-01-30
申请人： Katsuyuki Fujita , Yoshiaki Ono , Yutaka Shibahashi
发明人： Katsuyuki Fujita , Yoshiaki Ono , Yutaka Shibahashi
IPC分类号： C09K3/00 , B41M5/30 , B41M5/337 , B41M5/40 , B41M5/42 , C09B67/00 , C09B67/08 , C09B67/44 , C09K9/02 , C09D11/02
CPC分类号： B41M5/3375 , B41M5/305 , B41M5/42 , C09K9/02 , B41M5/423 , B41M5/426
摘要： A reversible thermochromic composition is formed by blending: (a) an electron donating compound; (b) an electron accepting compound; (c) a metachromatic temperature adjuster; (d) an electron accepting, light-fastness providing agent represented by Formula I based on 1.0 part by weight of the component-(a) electron donating compound: ##STR1## wherein n represents an integer of 5 to 17; X and Y each represent C.sub.1-4 or halogen; and p and m each represent an integer of 0 to 3.
摘要翻译：通过以下方式形成可逆热变色组合物：（a）给电子化合物; （b）电子接受性化合物; （c）异味温度调节器; （d）基于1.0重量份组分（a）给电子化合物的式I表示的电子接受耐光性提供剂：其中n表示5至17的整数; X和Y各自表示C1-4或卤素; p和m分别表示0〜3的整数。

24. 发明授权

US5688592A Thermochromic laminate comprising light intercepting pigment and light stabilizer 失效
标题翻译：包含遮光颜料和光稳定剂的热变色层压板
公开(公告)号：US5688592A
公开(公告)日：1997-11-18
申请号：US425788
申请日：1995-04-20
申请人： Yutaka Shibahashi , Katsuyuki Fujita
发明人： Yutaka Shibahashi , Katsuyuki Fujita
IPC分类号： B41M5/337 , B32B27/18 , B44F1/08 , B32B5/16
CPC分类号： B32B27/18 , B41M5/30 , B41M5/42 , B44F1/08 , B41M2205/04 , B41M2205/40 , B41M5/305 , B41M5/423 , B41M5/426 , Y10S428/913 , Y10S428/914 , Y10T428/25 , Y10T428/251 , Y10T428/256 , Y10T428/2991
摘要： A thermochromic laminate is provided which comprises a thermochromic layer, and a coating layer or layers laminated thereon containing a light-intercepting pigment and a light stabilizer; the coating layer or layers containing the light-intercepting pigment and the light stabilizer dispersed and fixed in a first film-forming material, and the thermochromic layer constituted of a homogeneous solid composed of an electron-donating coloring organic compound, an electron-accepting compound, and an organic compound medium for adjusting color reaction temperature dispersed and fixed in a second film forming material; the light-intercepting pigment being one or more pigments selected from metallic luster pigments, transparent titanium dioxide, transparent iron oxide, transparent cesium oxide, and transparent zinc oxide; and the light stabilizer being one or more chemicals selected from ultraviolet absorbers, antioxidants, singlet oxygen quenchers, superoxide anion quenchers, ozone quenchers, visible light absorbers, and infrared absorbers. The thermochromic laminate has remarkably improved light-fastness.
摘要翻译：提供了一种热致变色层压板，其包括热变色层，以及层压在其上的包含遮光颜料和光稳定剂的涂层; 包含遮光颜料的涂层或分散固定在第一成膜材料中的光稳定剂的层，以及由供电子着色有机化合物，电子接受性化合物和用于调节分散固定在第二成膜材料中的显色反应温度的有机化合物介质; 遮光颜料是选自金属光泽颜料，透明二氧化钛，透明氧化铁，透明氧化铯和透明氧化锌中的一种或多种颜料; 光稳定剂是选自紫外线吸收剂，抗氧化剂，单线态氧猝灭剂，超氧化物阴离子猝灭剂，臭氧猝灭剂，可见光吸收剂和红外线吸收剂中的一种或多种化学物质。热变色层压板具有显着提高的耐光性。

25. 发明授权

US09589621B2 Resistance change memory 有权
标题翻译：电阻变化记忆
公开(公告)号：US09589621B2
公开(公告)日：2017-03-07
申请号：US14988144
申请日：2016-01-05
申请人： Katsuyuki Fujita
发明人： Katsuyuki Fujita
IPC分类号： G11C11/16 , G11C11/14 , G11C11/02 , G11C7/04 , G11C29/44 , G11C7/10 , G06F11/00 , G11C11/56 , G11C7/08 , G11C16/26 , G11C13/00 , G11C29/04
CPC分类号： G11C11/1675 , G06F11/00 , G06F11/3037 , G06F11/3058 , G11C7/04 , G11C7/08 , G11C7/1006 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C11/5607 , G11C13/004 , G11C13/0069 , G11C16/26 , G11C29/44 , G11C2013/0052 , G11C2013/0092 , G11C2029/0411
摘要： A resistance change memory includes a memory cell array comprising memory cells including magnetic tunnel junction (MTJ) elements; a write and read circuit which performs a write operation and a read operation for the memory cells; a temperature sensor which outputs temperature information corresponding to a temperature of the memory cell array; and a memory controller which controls the write operation and the read operation by the write and read circuit in response to the temperature information, such that a first time period from a write command input to a pre-charge command input is variable according to the temperature information, while a second time period from an active command input to the pre-charge command input is fixed constant regardless of the temperature information.
摘要翻译：电阻变化存储器包括存储单元阵列，其包括包括磁性隧道结（MTJ）元件的存储单元; 写入和读取电路，用于对存储器单元执行写入操作和读取操作; 温度传感器，其输出与存储单元阵列的温度对应的温度信息; 以及存储器控制器，其响应于温度信息控制写入和读取电路的写入操作和读取操作，使得从写入命令输入到预充电命令输入的第一时间段根据温度而变化信息，而从活动命令输入到预充电命令输入的第二时间段不管温度信息如何都是固定的。

26. 发明授权

US09502140B2 Semiconductor memory device 有权
公开(公告)号：US09502140B2
公开(公告)日：2016-11-22
申请号：US14799066
申请日：2015-07-14
申请人： Katsuyuki Fujita
发明人： Katsuyuki Fujita
IPC分类号： G11C7/00 , G11C29/00 , G11C11/16 , G11C29/04
CPC分类号： G11C29/76 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/1693 , G11C29/04 , G11C29/787
摘要： According to one embodiment, a semiconductor memory device includes first word lines connected to a memory cell array, second word lines connected to a redundancy area, a first row decoder configured to perform selecting from the first word lines based on a row address, a judgment circuit configured to determine whether or not a replacement operation with the redundancy area is needed based on a redundancy address included in the row address, and a second row decoder configured to perform selecting from the second word lines. The row address includes a first row address and a second row address input in order in a time-sharing method. The first row address includes all of the redundancy address.

27. 发明申请

US20150318061A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20150318061A1
公开(公告)日：2015-11-05
申请号：US14799066
申请日：2015-07-14
申请人： Katsuyuki Fujita
发明人： Katsuyuki Fujita
IPC分类号： G11C29/00 , G11C29/04 , G11C11/16
CPC分类号： G11C29/76 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/1693 , G11C29/04 , G11C29/787
摘要： According to one embodiment, a semiconductor memory device includes first word lines connected to a memory cell array, second word lines connected to a redundancy area, a first row decoder configured to perform selecting from the first word lines based on a row address, a judgment circuit configured to determine whether or not a replacement operation with the redundancy area is needed based on a redundancy address included in the row address, and a second row decoder configured to perform selecting from the second word lines. The row address includes a first row address and a second row address input in order in a time-sharing method. The first row address includes all of the redundancy address.
摘要翻译：根据一个实施例，半导体存储器件包括连接到存储单元阵列的第一字线，连接到冗余区的第二字线，配置为基于行地址从第一字线执行选择的第一行解码器，判断电路，被配置为基于包括在行地址中的冗余地址来确定是否需要具有冗余区域的替换操作;以及第二行解码器，被配置为执行从第二字线的选择。行地址包括在分时方法中按顺序输入的第一行地址和第二行地址。第一行地址包括所有冗余地址。

28. 发明授权

US08233310B2 Resistance-change memory 有权
标题翻译：电阻变化记忆
公开(公告)号：US08233310B2
公开(公告)日：2012-07-31
申请号：US12847892
申请日：2010-07-30
申请人： Katsuyuki Fujita , Shinichiro Shiratake
发明人： Katsuyuki Fujita , Shinichiro Shiratake
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： According to one embodiment, a resistance-change memory includes bit lines running in a first direction, word lines running in a second direction, and a memory cell array includes memory cells each includes a selection transistor and a variable resistance element. In a layout of first to fourth variable resistance elements arranged in order in the first direction, the first variable resistance element and the second variable resistance element sandwich one word line therebetween, the third variable resistance element and the fourth variable resistance element sandwich one word line therebetween, a first pair includes the first and second variable resistance elements and a second pair includes the third and fourth variable resistance elements sandwich two word lines therebetween, and a column is constructed by repeating the layout in the first direction.
摘要翻译：根据一个实施例，电阻变化存储器包括沿第一方向运行的位线，在第二方向上运行的字线，以及包括选择晶体管和可变电阻元件的存储单元阵列。在第一至第四可变电阻元件的布置中，第一可变电阻元件和第二可变电阻元件之间夹着一条字线，第三可变电阻元件和第四可变电阻元件夹着一条字线其间，第一对包括第一和第二可变电阻元件，第二对包括第三和第四可变电阻元件，夹着两条字线，并且通过在第一方向重复布局来构造列。

29. 发明申请

US20090147226A1 Inner Surface Exposure Apparatus and Inner Surface Exposure Method Technical Field 审中-公开
标题翻译：内表面曝光装置及内表面曝光方法技术领域
公开(公告)号：US20090147226A1
公开(公告)日：2009-06-11
申请号：US12087651
申请日：2006-12-25
申请人： Toshiyuki Horiuchi , Katsuyuki Fujita , Takashi Yasuda
发明人： Toshiyuki Horiuchi , Katsuyuki Fujita , Takashi Yasuda
IPC分类号： G03B27/42
CPC分类号： G03F7/24 , G03F7/703
摘要： An apparatus and a method for exposing a photosensitive material deposited on the inner surface of a tube such as a circular or polygonal tube to light to form a predetermined exposed pattern are provided. The apparatus includes: a guide rod that is inserted into the inner space of an exposure object and emits an exposure light beam toward the inner side of the exposure object; and a stage for changing the relative positions of the exposure object and the guide rod and/or the relative angle between the exposure object and the guide rod. After the irradiation spot of the exposure light beam is brought into focus and/or is adjusted to an exposure starting point, the exposure light beam is projected onto a predetermined position on the exposure object to form a predetermined exposed pattern of a photosensitive material deposited on the inner surface of the exposure object.
摘要翻译：提供了一种用于将沉积在诸如圆形或多边形管的管的内表面上的感光材料曝光以形成预定的暴露图案的装置和方法。该装置包括：导杆，其被插入到曝光对象的内部空间中，并且朝向曝光对象的内侧发射曝光光束; 以及用于改变曝光对象和导杆的相对位置和/或曝光对象与导杆之间的相对角度的台。在曝光光束的照射点被聚焦和/或被调整到曝光开始点之后，曝光光束被投射到曝光对象上的预定位置上，以形成沉积在其上的感光材料的预定曝光图案曝光对象的内表面。

30. 发明授权

US07494537B2 Thermochromic coloring color-memory composition and thermochromic coloring color-memory microcapsule pigment containing the same 有权
标题翻译：热变色着色色记忆组合物和含有其的热致色着色色记忆微胶囊颜料
公开(公告)号：US07494537B2
公开(公告)日：2009-02-24
申请号：US11273080
申请日：2005-11-15
申请人： Yoshiaki Ono , Katsuyuki Fujita
发明人： Yoshiaki Ono , Katsuyuki Fujita
IPC分类号： C09D11/00
CPC分类号： B41M5/305 , B41M5/337 , C09D11/17
摘要： A thermochromic coloring color-memory composition comprising a homogeneous solubilized mixture of (A) an electron donative coloring organic compound, (B) an electron accepting compound and (C) a compound represented by the specific formula as a reaction medium which controls color reactions of the components (A) and (B).
摘要翻译：一种热致变色着色记录组合物，其包含（A）给电子着色有机化合物，（B）电子接受性化合物和（C）作为反应介质的化合物作为反应介质的均匀溶解混合物，其控制着色反应组分（A）和（B）。

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