会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 28. 发明授权
    • Fabrication of semiconductor Mach-Zehnder modulator
    • 半导体Mach-Zehnder调制器的制造
    • US06281030B1
    • 2001-08-28
    • US09580896
    • 2000-05-30
    • Junichi Shimizu
    • Junichi Shimizu
    • H01L2100
    • G02F1/2257G02F2201/126
    • A semiconductor Mach-Zehnder modulator comprises a pair of phase modulator arm waveguides and a single driver for a push-pull modulation. A first electrode connected to p-type cladding layer of first modulator arm is maintained at a negative potential V&pgr;, a second electrode connected to n-type cladding layer of first modulator arm and p-type cladding layer of second modulator arm is driven by a drive voltage, and a third electrode connected to n-type cladding layer of second modulator arm is maintained at a ground potential. The drive voltage changes between V&pgr;, and V&pgr;/2 for push-pull modulation of both modulator arms.
    • 半导体马赫 - 曾德调制器包括一对相位调制器臂波导和用于推挽调制的单个驱动器。 连接到第一调制臂的p型包层的第一电极保持在负电位Vpi,与第一调制臂的n型包层连接的第二电极和第二调制器臂的p型包层由 驱动电压,与第二调制臂的n型包层连接的第三电极保持接地电位。 两个调制器臂的推挽调制之间的驱动电压在Vpi和Vpi / 2之间变化。