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21. 发明申请

US20060148179A1 Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device 有权
标题翻译：制造含氮栅极电介质层和半导体器件的方法
公开(公告)号：US20060148179A1
公开(公告)日：2006-07-06
申请号：US11028717
申请日：2005-01-03
申请人： Yu-Ren Wang , Ying-Wei Yen , Michael Chan
发明人： Yu-Ren Wang , Ying-Wei Yen , Michael Chan
IPC分类号： H01L21/336 , H01L21/31 , H01L21/3205
CPC分类号： H01L21/0214 , H01L21/02238 , H01L21/02332 , H01L21/28202 , H01L21/3144 , H01L21/31675
摘要： A method of fabricating a nitrogen-containing gate dielectric layer is described. First, a gate dielectric layer is formed on a substrate by performing a dilute wet oxidation process. Then, a nitridation step is performed for doping nitrogen into the gate dielectric layer. After that, a re-oxidation step is performed for repairing the nitrogen-doped gate dielectric layer. The above steps are carried out inside the same reaction chamber. Moreover, two or more wafers can be treated inside the reaction chamber at the same time.
摘要翻译：描述了制造含氮栅介质层的方法。首先，通过进行稀薄的湿式氧化处理，在基板上形成栅极电介质层。然后，进行氮化步骤以将氮掺杂到栅极介电层中。之后，进行再氧化步骤，以修复氮掺杂栅介电层。上述步骤在相同的反应室内进行。此外，可以同时在反应室内处理两个或更多个晶片。

22. 发明授权

US06826741B1 Flexible I/O routing resources 有权
标题翻译：灵活的I / O路由资源
公开(公告)号：US06826741B1
公开(公告)日：2004-11-30
申请号：US10289629
申请日：2002-11-06
申请人： Brian D. Johnson , Andy L. Lee , Cameron McClintock , Triet Nguyen , David Jefferson , Paul Leventis , David Lewis , Vaughn Betz , Michael Chan
发明人： Brian D. Johnson , Andy L. Lee , Cameron McClintock , Triet Nguyen , David Jefferson , Paul Leventis , David Lewis , Vaughn Betz , Michael Chan
IPC分类号： G06F1750
CPC分类号： H03K19/17736 , H03K19/17744
摘要： In one aspect, flexible routing resources provided are comprising an arrangement of staggered line segments on a periphery of an electronic device. In another aspect, I/O bus lines a re coupled to receive signals from and to provide signals to other bus lines, core routing, and I/O circuitry, thus facilitating the use of the I/O bus for a variety of routes that may include I/O-to-core, core-to-I/O and core-to-core routes. In another aspect, a length of I/O bus lines is optimized for speed over long signal routes with high fanout. In another aspect, the loading effects of high fanout are minimized by using a plurality of tapping buffers to couple lines to both core routing and to I/O circuitry. In another aspect, a spiraling technique is provided that allows a continuous bus having line segments of consistent length whether or not the number of I/O blocks is an integral multiple of the selected logical length for line segments.
摘要翻译：在一个方面，提供的灵活路由资源包括在电子设备的外围上的交错线段的布置。在另一方面，I / O总线线路被耦合以从其接收信号并向其它总线线路，核心路由和I / O电路提供信号，从而便于将I / O总线用于各种路由，可能包括I / O到核心，核到I / O和核心到核心的路由。在另一方面，I / O总线的长度针对具有高扇出的长信号路由的速度被优化。在另一方面，通过使用多个分接缓冲器来将线耦合到核心路由和I / O电路两者，高扇出的负载效应被最小化。在另一方面，提供一种螺旋式技术，其允许具有一致长度的线段的连续总线，无论I / O块的数量是否为线段的所选逻辑长度的整数倍。

23. 发明授权

US06600821B1 System and method for automatically detecting problematic calls 有权
标题翻译：自动检测有问题的电话的系统和方法
公开(公告)号：US06600821B1
公开(公告)日：2003-07-29
申请号：US09426615
申请日：1999-10-26
申请人： Michael Chan , Patrick Donohue , Serdar Uckun
发明人： Michael Chan , Patrick Donohue , Serdar Uckun
IPC分类号： H04M164
CPC分类号： H04M3/51 , H04M3/42221 , H04M3/5175 , H04M2201/40
摘要： A system and method for detecting problematic call interactions between callers and call center agents of a communications system. By monitoring call associated information, speech, and voice characteristics of the call interaction, the system and method determine whether calls are being handled properly. If a call is determined to be problematic, a call center supervisor is automatically notified of the problematic call. Further, the problematic call interaction is recorded and can later be retrieved.
摘要翻译：一种用于检测通信系统的呼叫者和呼叫中心代理之间的有问题的呼叫交互的系统和方法。通过监视呼叫交互的呼叫关联信息，语音和语音特征，系统和方法确定呼叫是否被正确处理。如果确定呼叫有问题，呼叫中心主管会自动通知有问题的呼叫。此外，有问题的呼叫交互被记录并且可以稍后被检索。

24. 发明授权

US6145997A Flashlight having battery suspension system 失效
标题翻译：手电筒具有电池悬挂系统
公开(公告)号：US6145997A
公开(公告)日：2000-11-14
申请号：US943548
申请日：1997-10-03
申请人： John August Sedovic , David J. Bamber , Michael Chan
发明人： John August Sedovic , David J. Bamber , Michael Chan
IPC分类号： F21L4/00 , F21L7/00
CPC分类号： F21L7/00
摘要： A flashlight having a battery suspension system is provided and includes a flashlight body having a substantially hollow portion into which at least one battery may be loaded; an end cap removably mountable to one longitudinal end of the flashlight body; a head assembly removably mountable to another longitudinal end of the flashlight body opposite the one longitudinal end; a first spring disposed adjacent the end cap and extending in an axial direction of the flashlight body; a second spring disposed adjacent the head assembly and extending in the axial direction of the flashlight body; and a plate member disposed with one surface in contact with the second spring, and another surface facing toward the first spring.
摘要翻译：提供具有电池悬架系统的手电筒，并且包括具有基本中空部分的手电筒主体，至少一个电池可以装载到该手电筒主体中; 可拆卸地安装到手电筒主体的一个纵向端部的端盖; 头部组件可移除地安装到手电筒本体的与一个纵向端相对的另一个纵向端部; 第一弹簧，其设置在所述端盖附近并沿所述手电筒主体的轴向方向延伸; 第二弹簧，其布置成邻近所述头部组件并在所述手电筒本体的轴向方向上延伸; 以及板构件，其设置有与第二弹簧接触的一个表面，以及面向第一弹簧的另一表面。

25. 发明授权

US09148399B1 Automatic publication of a user's application installation events 有权
标题翻译：自动发布用户的应用程序安装事件
公开(公告)号：US09148399B1
公开(公告)日：2015-09-29
申请号：US13529152
申请日：2012-06-21
申请人： Adam Sadovsky , Michael Chan
发明人： Adam Sadovsky , Michael Chan
IPC分类号： G06F15/16 , H04L12/58
CPC分类号： H04L51/32 , H04L12/1859
摘要： A system and a method for notifying users of the installation of applications using social networks. An application broadcaster automatically publishes a user's application installation events on one platform to the user's activity streams on external social platforms. This way, a message regarding the application appears in the user's activity streams within social networks, resulting in the application becoming popular among the user's friends. In one embodiment, the application broadcaster determines whether user activity associated with the installed application meets a criterion before broadcasting information about the application. The application broadcaster also suggests applications that the user might find interesting.
摘要翻译：一种用于通知用户使用社交网络安装应用程序的系统和方法。应用广播公司在一个平台上自动将用户的应用程序安装事件发布到用户在外部社交平台上的活动流。这样，关于应用程序的消息就会出现在社交网络中的用户活动流中，导致应用程序在用户的朋友之间变得流行。在一个实施例中，应用广播者在广播关于应用的信息之前确定与所安装的应用相关联的用户活动是否满足标准。应用程序广播公司还建议用户可能会感兴趣的应用程序。

26. 发明授权

US08987119B2 Pillar devices and methods of making thereof 有权
公开(公告)号：US08987119B2
公开(公告)日：2015-03-24
申请号：US13026381
申请日：2011-02-14
申请人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
发明人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
IPC分类号： H01L21/36 , H01L27/102 , H01L29/861 , H01L29/868
CPC分类号： H01L27/1021 , H01L29/8613 , H01L29/8615 , H01L29/868
摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.

27. 发明授权

US08191025B1 Redundancy structures and methods in a programmable logic device 有权
标题翻译：可编程逻辑器件中的冗余结构和方法
公开(公告)号：US08191025B1
公开(公告)日：2012-05-29
申请号：US12552214
申请日：2009-09-01
申请人： Michael Chan , Paul Leventis , David Lewis , Ketan Zaveri , Hyun Mo Yi , Chris Lane
发明人： Michael Chan , Paul Leventis , David Lewis , Ketan Zaveri , Hyun Mo Yi , Chris Lane
IPC分类号： G06F17/50 , G06F9/00 , G06F15/177 , H03K19/00 , H01L25/00
CPC分类号： H03K19/17764 , H03K19/17736
摘要： An embodiment of the present invention provides a programmable logic device (“PLD”) including a redundancy architecture adapted to selective route signals via first or second staggered vertical lines. Other embodiments provide configuration logic and programs for determining routing selections. Other embodiments provide proximate grouping of vertical lines driven from a same row. Other embodiments provide definition of spare row locations once defective row locations are known.
摘要翻译：本发明的实施例提供了一种可编程逻辑器件（“PLD”），其包括适于经由第一或第二交错垂直线选择性路由信号的冗余架构。其他实施例提供用于确定路由选择的配置逻辑和程序。其他实施例提供从相同行驱动的垂直线的近似分组。其他实施例提供了一旦有缺陷的行位置是已知的备用行位置的定义。

28. 发明授权

US08084366B2 Modified DARC stack for resist patterning 有权
标题翻译：用于抗蚀剂图案化的改进的DARC叠层
公开(公告)号：US08084366B2
公开(公告)日：2011-12-27
申请号：US12213273
申请日：2008-06-17
申请人： Michael Chan , Usha Raghuram
发明人： Michael Chan , Usha Raghuram
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0332 , H01L21/0276 , H01L21/3081 , H01L21/31144 , H01L21/32139 , H01L27/101
摘要： A method of making a device includes forming a device layer, forming an organic hard mask layer over the device layer, forming a first oxide hard mask layer over the organic hard mask layer, forming a DARC layer over the first oxide hard mask layer, forming a photoresist layer over the DARC layer, patterning the photoresist layer to form a photoresist pattern, and transferring the photoresist pattern to the device layer using the DARC layer, the first oxide hard mask layer and the organic hard mask layer.
摘要翻译：制造器件的方法包括形成器件层，在器件层上形成有机硬掩模层，在有机硬掩模层上形成第一氧化物硬掩模层，在第一氧化物硬掩模层上形成DARC层，形成在DARC层上的光致抗蚀剂层，图案化光致抗蚀剂层以形成光致抗蚀剂图案，并且使用DARC层，第一氧化物硬掩模层和有机硬掩模层将光致抗蚀剂图案转移到器件层。

29. 发明授权

US07981592B2 Double patterning method 失效
标题翻译：双重图案化方法
公开(公告)号：US07981592B2
公开(公告)日：2011-07-19
申请号：US12222293
申请日：2008-08-06
申请人： Michael Chan
发明人： Michael Chan
IPC分类号： G03F7/26
CPC分类号： H01L21/0273 , H01L21/0331 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139 , H01L27/101
摘要： A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, where the second photoresist pattern is a second grid which overlaps the first grid to form a photoresist web, and etching the underlying layer using the photoresist web as a mask.
摘要翻译：制造器件的方法包括在下层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成包括第一栅格的第一光致抗蚀剂图案，使第一光致抗蚀剂图案不溶于溶剂，在第第一光致抗蚀剂图案，图案化第二光致抗蚀剂层以在下层上形成第二光致抗蚀剂图案，其中第二光致抗蚀剂图案是与第一栅格重叠以形成光致抗蚀剂幅材的第二栅格，并且使用光致抗蚀剂幅材蚀刻下层一个面具

30. 发明授权

US07906392B2 Pillar devices and methods of making thereof 有权
标题翻译：支柱装置及其制造方法
公开(公告)号：US07906392B2
公开(公告)日：2011-03-15
申请号：US12007781
申请日：2008-01-15
申请人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
发明人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
IPC分类号： H01L21/8242 , H01L21/8234 , H01L21/8222
CPC分类号： H01L27/1021 , H01L29/8613 , H01L29/8615 , H01L29/868
摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.
摘要翻译：制造半导体器件的方法包括提供包含多个开口的绝缘层，在绝缘层中的多个开口中并在绝缘层之上形成第一半导体层，以及去除第一半导体层的第一部分，第一半导体层的第一导电类型的第二部分保留在绝缘层中的多个开口的下部，并且绝缘层中的多个开口的上部保持未填充。该方法还包括在绝缘层中的多个开口的上部和绝缘层上形成第二半导体层，以及去除位于绝缘层之上的第二半导体层的第一部分。第二半导体层的第二导电类型的第二部分保留在绝缘层中的多个开口的上部，以在多个开口中形成多个柱状二极管。

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