专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090179310A1 Pillar devices and methods of making thereof 有权
标题翻译：支柱装置及其制造方法
公开(公告)号：US20090179310A1
公开(公告)日：2009-07-16
申请号：US12007781
申请日：2008-01-15
申请人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
发明人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
IPC分类号： H01L29/868 , H01L21/20
CPC分类号： H01L27/1021 , H01L29/8613 , H01L29/8615 , H01L29/868
摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.
摘要翻译：制造半导体器件的方法包括提供包含多个开口的绝缘层，在绝缘层中的多个开口中并在绝缘层之上形成第一半导体层，以及去除第一半导体层的第一部分，第一半导体层的第一导电类型的第二部分保留在绝缘层中的多个开口的下部，并且绝缘层中的多个开口的上部保持未填充。该方法还包括在绝缘层中的多个开口的上部和绝缘层上形成第二半导体层，以及去除位于绝缘层之上的第二半导体层的第一部分。第二半导体层的第二导电类型的第二部分保留在绝缘层中的多个开口的上部，以在多个开口中形成多个柱状二极管。

2. 发明申请

US20110136326A1 PILLAR DEVICES AND METHODS OF MAKING THEREOF 有权
标题翻译：支柱装置及其制造方法
公开(公告)号：US20110136326A1
公开(公告)日：2011-06-09
申请号：US13026381
申请日：2011-02-14
申请人： Vance DUNTON , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
发明人： Vance DUNTON , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
IPC分类号： H01L21/36
CPC分类号： H01L27/1021 , H01L29/8613 , H01L29/8615 , H01L29/868
摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.
摘要翻译：制造半导体器件的方法包括提供包含多个开口的绝缘层，在绝缘层中的多个开口中并在绝缘层之上形成第一半导体层，以及去除第一半导体层的第一部分，第一半导体层的第一导电类型的第二部分保留在绝缘层中的多个开口的下部，并且绝缘层中的多个开口的上部保持未填充。该方法还包括在绝缘层中的多个开口的上部和绝缘层上形成第二半导体层，以及去除位于绝缘层之上的第二半导体层的第一部分。第二半导体层的第二导电类型的第二部分保留在绝缘层中的多个开口的上部，以在多个开口中形成多个柱状二极管。

3. 发明授权

US08987119B2 Pillar devices and methods of making thereof 有权
公开(公告)号：US08987119B2
公开(公告)日：2015-03-24
申请号：US13026381
申请日：2011-02-14
申请人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
发明人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
IPC分类号： H01L21/36 , H01L27/102 , H01L29/861 , H01L29/868
CPC分类号： H01L27/1021 , H01L29/8613 , H01L29/8615 , H01L29/868
摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.

4. 发明授权

US07906392B2 Pillar devices and methods of making thereof 有权
标题翻译：支柱装置及其制造方法
公开(公告)号：US07906392B2
公开(公告)日：2011-03-15
申请号：US12007781
申请日：2008-01-15
申请人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
发明人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
IPC分类号： H01L21/8242 , H01L21/8234 , H01L21/8222
CPC分类号： H01L27/1021 , H01L29/8613 , H01L29/8615 , H01L29/868
摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.
摘要翻译：制造半导体器件的方法包括提供包含多个开口的绝缘层，在绝缘层中的多个开口中并在绝缘层之上形成第一半导体层，以及去除第一半导体层的第一部分，第一半导体层的第一导电类型的第二部分保留在绝缘层中的多个开口的下部，并且绝缘层中的多个开口的上部保持未填充。该方法还包括在绝缘层中的多个开口的上部和绝缘层上形成第二半导体层，以及去除位于绝缘层之上的第二半导体层的第一部分。第二半导体层的第二导电类型的第二部分保留在绝缘层中的多个开口的上部，以在多个开口中形成多个柱状二极管。

5. 发明授权

US08329512B2 Patterning method for high density pillar structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US08329512B2
公开(公告)日：2012-12-11
申请号：US13463260
申请日：2012-05-03
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/82
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

6. 发明申请

US20110171815A1 PATTERNING METHOD FOR HIGH DENSITY PILLAR STRUCTURES 有权
标题翻译：高密度支柱结构的方法
公开(公告)号：US20110171815A1
公开(公告)日：2011-07-14
申请号：US12686217
申请日：2010-01-12
申请人： Natalie NGUYEN , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie NGUYEN , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/30
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

7. 发明申请

US20120276744A1 Patterning Method for High Density Pillar Structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US20120276744A1
公开(公告)日：2012-11-01
申请号：US13463260
申请日：2012-05-03
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/302
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

8. 发明授权

US08241969B2 Patterning method for high density pillar structures 有权
公开(公告)号：US08241969B2
公开(公告)日：2012-08-14
申请号：US13216688
申请日：2011-08-24
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/82
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

9. 发明申请

US20110306174A1 Patterning Method for High Density Pillar Structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US20110306174A1
公开(公告)日：2011-12-15
申请号：US13216688
申请日：2011-08-24
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L45/00
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

10. 发明授权

US08026178B2 Patterning method for high density pillar structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US08026178B2
公开(公告)日：2011-09-27
申请号：US12686217
申请日：2010-01-12
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/311
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式