会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 22. 发明授权
    • Speech synthesis method
    • 语音合成方法
    • US07130799B1
    • 2006-10-31
    • US09684331
    • 2000-10-10
    • Katsumi AmanoShisei ChoSoichi ToyamaHiroyuki Ishihara
    • Katsumi AmanoShisei ChoSoichi ToyamaHiroyuki Ishihara
    • G10L13/00
    • G10L13/04G10L13/07
    • A speech synthesizing method which synthesizes speech naturally is disclosed. Standardized frame power values of an n-th frame is calculated when frame power values at head and tail frames in a phoneme are standardized. An average value of the power values sampled from the power frequency characteristics in the n-th frame at a predetermined frequency interval is set as a mean frame power value. A sum of squares of signal levels in one frame of a frequency signal from a sound source is calculated as a frame power correction value. A speech envelope signal is calculated as a function having variables of the standardized frame power values, the frame power correction value and the mean frame power value. The speech envelope signal adjusts the amplitude level of a speech waveform signal supplied from a vocal tract filter according to the level of the speech envelope signal.
    • 公开了一种自然合成语音的语音合成方法。 在音素中的头部和尾部帧的帧功率值被标准化时,计算第n帧的标准化帧功率值。 以预定频率间隔从第n帧中的功率频率特性采样的功率值的平均值被设置为平均帧功率值。 将来自声源的频率信号的一帧中的信号电平的平方和计算为帧功率校正值。 计算语音包络信号作为具有标准化帧功率值,帧功率校正值和平均帧功率值的变量的函数。 语音包络信号根据语音包络信号的电平来调节从声道滤波器提供的语音波形信号的幅度电平。
    • 26. 发明授权
    • Method for forming phoneme data and voice synthesizing apparatus utilizing a linear predictive coding distortion
    • 用于使用线性预测编码失真形成音素数据和语音合成装置的方法
    • US06594631B1
    • 2003-07-15
    • US09657163
    • 2000-09-07
    • Shisei ChoKatsumi AmanoHiroyuki Ishihara
    • Shisei ChoKatsumi AmanoHiroyuki Ishihara
    • G10L2102
    • G10L19/06G10L13/06
    • A method for forming phoneme data and a voice synthesizing apparatus for phoneme data in the voice synthesizing apparatus is provided. In this method and apparatus, an LPC coefficient is obtained for every phoneme and is set to temporary phoneme data and a first LPC Cepstrum based on the LPC coefficient is obtained. A second LPC Cepstrum is obtained based on each voice waveform signal which has been synthesized and generated by the voice synthesizing apparatus while the pitch frequency is changed step by step with a filter characteristic of the voice synthesizing apparatus being set to a filter characteristic according to the temporary phoneme data. Further, an error between the first and second LPC Cepstrums is obtained as an LPC Cepstrum distortion. Each phoneme in the phoneme group belonging to the same phoneme name in each of the phonemes is classified into a plurality of groups every frame length. The optimum phoneme is selected based on the LPC Cepstrum distortion every group from this group. The temporary phoneme data corresponding to this phoneme is used as final phoneme data.
    • 提供了一种在语音合成装置中形成音素数据的方法和用于音素数据的语音合成装置。 在该方法和装置中,为每个音素获得LPC系数,并将其设置为临时音素数据,并获得基于LPC系数的第一LPC倒谱。 基于由语音合成装置合成和生成的每个语音波形信号,在音调频率逐步改变的情况下获得第二LPC倒频谱,其中语音合成装置的滤波特性被设置为根据 临时音素数据。 此外,获得第一和第二LPC倒谱之间的误差作为LPC倒谱失真。 每个音素中属于相同音素名称的音素组中的每个音素每帧长度被分成多个组。 基于该组的每个组的LPC倒谱失真选择最佳音素。 对应于这个音素的临时音素被用作最终的音素数据。
    • 30. 发明授权
    • Plasma processing apparatus and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • US07335278B2
    • 2008-02-26
    • US10675966
    • 2003-10-02
    • Chishio KoshimizuHiroyuki IshiharaKimihiro HiguchiKoji Maruyama
    • Chishio KoshimizuHiroyuki IshiharaKimihiro HiguchiKoji Maruyama
    • H01L21/00C23C16/00C23C14/00
    • H01L21/6831H01J37/32623H01J37/32642H01J2237/2001H01L21/67248Y10S156/915
    • An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
    • 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上,并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给第一至第三温度传感器142,144和146的中心之间的空间的He的压力水平 晶片W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116与晶片W的外边缘和静电卡盘108之间的空间以及由外部环内的加热器148产生的热量 基于关于如此检测的温度的信息,使得晶片W和内环体112a的温度大致相等。