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21. 发明授权

US6051063A Diamond wafer and method of producing a diamond wafer 失效
标题翻译：金刚石晶片及其制造方法
公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。晶片单调失真，失真高度H满足2微米

22. 发明授权

US5160869A Surface acoustic wave device 失效
公开(公告)号：US5160869A
公开(公告)日：1992-11-03
申请号：US634321
申请日：1990-12-26
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device which comprises a diamond or diamond-like carbon layer, a ZnO piezoelectric layer and a comb-like electrode and has a structure having a large surface wave propagation velocity and a large electromechanical coupling factor which are achieved by defining a thickness of the ZnO layer and a mode.

23. 发明授权

US5081438A Thermistor and its preparation 失效
标题翻译：热敏电阻及其制备
公开(公告)号：US5081438A
公开(公告)日：1992-01-14
申请号：US506191
申请日：1990-04-09
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： H01C7/04 , H01C17/14
CPC分类号： H01C7/041 , H01C17/14 , Y10T29/49085
摘要： A thermistor having a temperature detecting part which has a temperature sensing part made of a vapor phase deposited semiconductive diamond film, a metal electrode layer formed on one surface of the semiconductive diamond film, and at least one lead wire connected with the metal electrode layer provided that at least 50% of a total volume of the temperature sensing part and the metal electrode layer is made of the vapor phase deposited diamond.

24. 发明授权

US5776246A Diamond wafer and method of producing a diamond wafer 失效
公开(公告)号：US5776246A
公开(公告)日：1998-07-07
申请号：US418116
申请日：1995-04-06
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

25. 发明授权

US5463901A Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack 失效
标题翻译：堆叠中的叠氮化硼层叠压电声表面波器件
公开(公告)号：US5463901A
公开(公告)日：1995-11-07
申请号：US283251
申请日：1994-07-29
申请人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
发明人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , G01L9/00 , H04R31/00
CPC分类号： H03H9/02574 , Y10T29/49005
摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要翻译：相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b）。叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。

26. 发明授权

US5390401A Method for producing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5390401A
公开(公告)日：1995-02-21
申请号：US103729
申请日：1993-08-06
申请人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H01L41/22
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/1092 , Y10T29/42
摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要翻译：表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。位于一对叉指电极（2a，2b）之间的部分传播表面声波。该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。

27. 发明授权

US5571603A Aluminum nitride film substrate and process for producing same 失效
标题翻译：氮化铝膜基板及其制造方法
公开(公告)号：US5571603A
公开(公告)日：1996-11-05
申请号：US393482
申请日：1995-02-24
申请人： Yoshiharu Utumi , Takahiro Imai , Naoji Fujimori
发明人： Yoshiharu Utumi , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B23/02 , C30B25/02 , C01B21/072
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , Y10T428/24942 , Y10T428/30
摘要： An aluminum nitride film substrate comprising a single crystal diamond having, on its (111) plane, (1) a C-axis oriented aluminum nitride film or (2) an aluminum nitride single crystal film, the C-plane of the aluminum nitride single crystal being parallel to the (111) plane of said single crystal diamond an aluminum nitride film substrate comprising a substrate having thereon a (111) direction oriented diamond polycrystalline film, and further having thereon a C-axis oriented aluminum nitride film; and process for producing these aluminum nitride film substrate.
摘要翻译：一种含有单晶金刚石的氮化铝膜基片，其（111）面上具有（1）C轴取向氮化铝膜或（2）氮化铝单晶膜，所述氮化铝单晶膜的C面晶体平行于所述单晶金刚石的（111）面，氮化铝膜基板包括其上具有（111）取向的金刚石多晶膜的基板，并且还具有C轴取向的氮化铝膜; 以及这些氮化铝膜基板的制造方法。

28. 发明授权

US4849290A Alumina coated with diamond 失效
标题翻译：涂有金刚石的氧化铝
公开(公告)号：US4849290A
公开(公告)日：1989-07-18
申请号：US84038
申请日：1987-08-11
申请人： Naoji Fujimori , Takahiro Imai
发明人： Naoji Fujimori , Takahiro Imai
IPC分类号： C23C16/26 , B23B27/14 , C23C16/27 , C23C16/32 , C23C16/50 , C23C16/511
CPC分类号： B23B27/148 , Y10T428/30
摘要： Alumina coated with diamond comprises an alumina substrate, a silicon carbide film formed on the alumina substrate, and a diamond film formed on the silicon carbide film.

29. 发明授权

US5766783A Boron-aluminum nitride coating and method of producing same 失效
标题翻译：硼氮化铝涂层及其制造方法
公开(公告)号：US5766783A
公开(公告)日：1998-06-16
申请号：US565027
申请日：1995-11-30
申请人： Yoshiharu Utsumi , Takahiro Imai , Naoji Fujimori
发明人： Yoshiharu Utsumi , Takahiro Imai , Naoji Fujimori
IPC分类号： C23C14/06 , C23C14/34 , C23C16/34 , C23C30/00 , B32B17/00
CPC分类号： C23C30/00 , C23C14/0641 , C23C14/3414 , C23C16/34 , Y10T428/265
摘要： Boron-aluminum nitride B.sub.x Al.sub.1-x N.sub.y (0.001.ltoreq.x.ltoreq.0.70, 0.85.ltoreq.y.ltoreq.1.05) films having wurtzite type structure are proposed. The material has higher hardness, higher sound velocity and wider band gap than hexagonal aluminum nitride (AlN).
摘要翻译：提出了具有纤锌矿型结构的硼 - 氮化铝BxAl1-xNy（0.001

30. 发明授权

US5624719A Process for synthesizing diamond in a vapor phase 失效
标题翻译：在气相中合成金刚石的方法
公开(公告)号：US5624719A
公开(公告)日：1997-04-29
申请号：US279088
申请日：1994-07-22
申请人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
发明人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
IPC分类号： C23C16/27 , C30B25/02 , B01J3/06
CPC分类号： C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要： A method for synthesizing diamond by chemical vapor deposition (CVD) is described. The method produces diamond of high purity and high crystallizability having various uses at low cost and at high speed. In a first method, a mixture of oxygen gas and a carbon-containing compound gas, and optionally an inert gas, is introduced into a reaction vessel. In a second method, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas, sulfur dioxide, an aforementioned mixture of oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into the reaction vessel. A plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.
摘要翻译：描述了通过化学气相沉积（CVD）合成金刚石的方法。该方法以低成本和高速度生产具有各种用途的高纯度和高结晶度的金刚石。在第一种方法中，将氧气和含碳化合物气体以及任选的惰性气体的混合物引入反应容器中。在第二种方法中，引入含有氟气，氯气，氮氧化物气体，二氧化硫，上述氧气和含碳化合物气体的混合物或其与惰性气体的混合物中的至少一种的混合物进入反应容器。通过使用电磁场产生等离子体，从而在放置在容器中的基底材料上产生金刚石。

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